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Ermin Malic

Publications and source records attributed to Ermin Malic.

At least 109 records · Page 6Linked to original sources

Optical fingerprint of bright and dark localized excitonic states in atomically thin 2D materials

Point defects, local strain or impurities can crucially impact the optical response of atomically thin two-dimensional materials as they offer trapping potentials for excitons. These trapped excitons appear in photoluminescence spectra as new resonances below the bright exciton that can even be exploited for single photon emission. While large progress has been made in deterministically introducing defects, only little is known about their impact on the optical fingerprint of 2D materials. Here, based on a microscopic approach we reveal direct signatures of localized bright excitonic states as well as indirect phonon-assisted side bands of localized momentum-dark excitons. The visibility of localized excitons strongly depends on temperature and disorder potential width. This results in different regimes, where either the bright or dark localized states are dominant in optical spectra. We trace back this behavior to an interplay between disorder-induced exciton capture and intervalley exciton-phonon scattering processes.

cond-mat.mes-hall↗

Exciton propagation and halo formation in two-dimensional materials

The interplay of optics, dynamics and transport is crucial for the design of novel optoelectronic devices, such as photodetectors and solar cells. In this context, transition metal dichalcogenides (TMDs) have received much attention. Here, strongly bound excitons dominate optical excitation, carrier dynamics and diffusion processes. While the first two have been intensively studied, there is a lack of fundamental understanding of non-equilibrium phenomena associated with exciton transport that is of central importance e.g. for high efficiency light harvesting. In this work, we provide microscopic insights into the interplay of exciton propagation and many-particle interactions in TMDs. Based on a fully quantum mechanical approach and in excellent agreement with photoluminescence measurements, we show that Auger recombination and emission of hot phonons act as a heating mechanism giving rise to strong spatial gradients in excitonic temperature. The resulting thermal drift leads to an unconventional exciton diffusion characterized by spatial exciton halos.

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Anomalous optical saturation of low-energy Dirac states in graphene and its implication for nonlinear optics

We reveal that optical saturation of the low-energy states takes place in graphene for arbitrarily weak electromagnetic fields. This effect originates from the diverging field-induced interband coupling at the Dirac point. Using semiconductor Bloch equations to model the electronic dynamics of graphene, we argue that the charge carriers undergo ultrafast Rabi oscillations leading to the anomalous saturation effect. The theory is complemented by a many-body study of the carrier relaxations dynamics in graphene. It will be demonstrated that the carrier relaxation dynamics is slow around the Dirac point, which in turn leads to a more pronounced saturation. The implications of this effect to the nonlinear optics of graphene is then discussed. Our analysis show that the conventional perturbative treatment of the nonlinear optics, i.e., expanding the polarization field in a Taylor series of the electric field, is problematic for graphene, in particular at small Fermi levels and large field amplitudes.

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Phonon-assisted Photoluminescence from Dark Excitons in Monolayers of Transition Metal Dichalcogenides

The photoluminescence (PL) spectrum of transition metal dichalcogenides (TMDs) shows a multitude of emission peaks below the bright exciton line and not all of them have been explained yet. Here, we study the emission traces of phonon-assisted recombinations of momentum-dark excitons. To this end, we develop a microscopic theory describing simultaneous exciton, phonon and photon interaction and including consistent many-particle dephasing. We explain the drastically different PL below the bright exciton in tungsten- and molybdenum-based materials as result of different configurations of bright and dark states. In good agreement with experiments, we show that WSe$_2$ exhibits clearly visible low-temperature PL signals stemming from the phonon-assisted recombination of momentum-dark excitons.

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Intrinsic Lifetime of Higher Excitonic States in Tungsten Diselenide Monolayers

The reduced dielectric screening in atomically thin transition metal dichalcogenides allows to study the hydrogen-like series of higher exciton states in optical spectra even at room temperature. The width of excitonic peaks provides information about the radiative decay and phonon-assisted scattering channels limiting the lifetime of these quasi-particles. While linewidth studies so far have been limited to the exciton ground state, encapsulation with hBN has recently enabled quantitative measurements of the broadening of excited exciton resonances. Here, we present a joint experiment-theory study combining microscopic calculations with spectroscopic measurements on the intrinsic linewidth and lifetime of higher exciton states in hBN-encapsulated WSe$_2$ monolayers. Surprisingly, despite the increased number of scattering channels, we find both in theory and experiment that the linewidth of higher excitonic states is similar or even smaller compared to the ground state. Our microscopic calculations ascribe this behavior to a reduced exciton-phonon scattering efficiency for higher excitons due to spatially extended orbital functions.

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Spatio-temporal dynamics in graphene

Temporally and spectrally resolved dynamics of optically excited carriers in graphene has been intensively studied theoretically and experimentally, whereas carrier diffusion in space has attracted much less attention. Understanding the spatio-temporal carrier dynamics is of key importance for optoelectronic applications, where carrier transport phenomena play an important role. In this work, we provide a microscopic access to the time-, momentum-, and space-resolved dynamics of carriers in graphene. We determine the diffusion coefficient to be $D \approx 360$cm$^{2}$/s and reveal the impact of carrier-phonon and carrier-carrier scattering on the diffusion process. In particular, we show that phonon-induced scattering across the Dirac cone gives rise to back-diffusion counteracting the spatial broadening of the carrier distribution.

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Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors

Two-dimensional group-VI transition metal dichalcogenide semiconductors, such as MoS2, WSe2 and others, exhibit strong light-matter coupling and possess direct band gaps in the infrared and visible spectral regimes, making them potentially interesting candidates for various applications in optics and optoelectronics. Here, we review their optical and optoelectronic properties with emphasis on exciton physics and devices. As excitons are tightly bound in these materials and dominate the optical response even at room-temperature, their properties are examined in depth in the first part of this article. We discuss the remarkably versatile excitonic landscape, including bright, dark, localized and interlayer excitons. In the second part, we provide an overview on the progress in optoelectronic device applications, such as electrically driven light emitters, photovoltaic solar cells, photodetectors and opto-valleytronic devices, again bearing in mind the prominent role of excitonic effects. We conclude with a brief discussion on challenges that remain to be addressed to exploit the full potential of transition metal dichalcogenide semiconductors in possible exciton-based applications.

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Theory of optically induced Förster Coupling in van der Waals coupled Heterostuctures

We investigate the impact of optically induced Förster coupling in van der Waals heterostructures consisting of graphene and a monolayer transition metal dichalcogenide (TMD). In particular, we predict the corresponding dephasing rates and a fast energy transfer between the TMD layer and graphene being in the picosecond range. Exemplary we find a transition rate of thermalized excitons of about 4 ps$^{-1}$ in a MoSe$_2$-graphene stack at room temperature. This timescale is in good agreement with the recently measured exciton lifetime in this heterostructure.

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Microscopic origin of the bolometric effect in graphene

While the thermoelectric and photoconduction effects are crucial in pristine and low-doped graphene, the bolometric effect is known to dominate the photoresponse in biased graphene. Here, we present a detailed microscopic investigation of the photoresponse due to the bolometric effect in graphene. Based on the semiconductor Bloch equations, we investigate the time- and momentumresolved carrier dynamics in graphene in the presence of a constant electric field under optical excitation. The magnitude of the bolometric effect is determined by the optically induced increase of temperature times the conductivity change. Investigating both factors independently, we reveal that the importance of the bolometric effect in the high-doping regime can be mostly ascribed to the latter showing a parabolic dependence on the doping.

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Carrier dynamics in graphene: ultrafast many-particle phenomena

Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging the valence and the conduction band changes the number of charge carriers and gives rise to a significant carrier multiplication - an ultrafast many-particle phenomenon that is promising for the design of highly efficient photodetectors. Furthermore, the vanishing density of states at the Dirac point combined with ultrafast phonon-induced intraband scattering results in an accumulation of carriers and a population inversion suggesting the design of graphene-based terahertz lasers. Here, we review our work on the ultrafast carrier dynamics in graphene and Landau-quantized graphene is presented providing a microscopic view on the appearance of carrier multiplication and population inversion.

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Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure

Heterostructures of van der Waals bonded layered materials offer unique means to tailor dielectric screening with atomic-layer precision, opening a fertile field of fundamental research. The optical analyses used so far have relied on interband spectroscopy. Here we demonstrate how a capping layer of hexagonal boron nitride (hBN) renormalizes the internal structure of excitons in a WSe$_2$ monolayer using intraband transitions. Ultrabroadband terahertz probes sensitively map out the full complex-valued mid-infrared conductivity of the heterostructure after optical injection of $1s$ A excitons. This approach allows us to trace the energies and linewidths of the atom-like $1s$-$2p$ transition of optically bright and dark excitons as well as the densities of these quasiparticles. The fundamental excitonic resonance red shifts and narrows in the WSe$_2$/hBN heterostructure compared to the bare monolayer. Furthermore, the ultrafast temporal evolution of the mid-infrared response function evidences the formation of optically dark excitons from an initial bright population. Our results provide key insight into the effect of non local screening on electron-hole correlations and open new possibilities of dielectric engineering of van der Waals heterostructures.

cond-mat.mtrl-sci↗

Impact of strain on the excitonic linewidth in transition metal dichalcogenides

Monolayer transition metal dichalcogenides (TMDs) are known to be highly sensitive to externally applied tensile or compressive strain. In particular, strain can be exploited as a tool to control the optical response of TMDs. However, the role of excitonic effects under strain has not been fully understood yet. Utilizing the strain-induced modification of electron and phonon dispersion obtained by first principle calculations, we present in this work microscopic insights into the strain-dependent optical response of various TMD materials. In particular, we explain recent experiments on the change of excitonic linewidths in strained TMDs and predict their behavior for tensile and compressive strain at low temperatures.

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Dark-exciton based strain sensing in transition metal dichalcogenides

The trend towards ever smaller high-performance devices in modern technology requires novel materials with new functionalities. The recent emergence of atomically thin two-dimensional (2D) materials has opened up possibilities for the design of ultra-thin and flexible nanoelectronic devices. As truly 2D materials, they exhibit an optimal surface-to-volume ratio, which results in an extremely high sensitivity to external changes. This makes these materials optimal candidates for sensing applications. Here, we exploit the remarkably diverse exciton landscape in monolayer transition metal dichalcogenides to propose a novel dark-exciton-based concept for ultra sensitive strain sensors. We demonstrate that the dark-bright-exciton separation can be controlled by strain, which has a crucial impact on the activation of dark excitonic states. This results in a pronounced intensity change of dark excitons in photoluminescence spectra, when only 0.05 $\%$ strain is applied. The predicted extremely high optical gauge factors of up to 8000 are promising for the design of optical strain sensors.

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Interlayer exciton dynamics in van der Waals heterostructures

Exciton binding energies of hundreds of meV and strong light absorption in the optical frequency range make transition metal dichalcogenides (TMDs) promising for novel optoelectronic nanodevices. In particular, atomically thin TMDs can be stacked to heterostructures enabling the design of new materials with tailored properties. The strong Coulomb interaction gives rise to interlayer excitons, where electrons and holes are spatially separated in different layers. In this work, we reveal the microscopic processes behind the formation, thermalization and decay of these fundamentally interesting and technologically relevant interlayer excitonic states. In particular, we present for the exemplary MoSe$_2$-WSe$_2$ heterostructure the interlayer exciton binding energies and wave functions as well as their time- and energy-resolved dynamics. Finally, we predict the dominant contribution of interlayer excitons to the photoluminescence of these materials.

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Symmetry-breaking supercollisions in Landau-quantized graphene

Recent pump-probe experiments performed on graphene in a perpendicular magnetic field have revealed carrier relaxation times ranging from picoseconds to nanoseconds depending on the quality of the sample. To explain this surprising behavior, we propose a novel symmetry-breaking defect-assisted relaxation channel. This enables scattering of electrons with single out-of-plane phonons, which drastically accelerate the carrier scattering time in low-quality samples. The gained insights provide a strategy for tuning the carrier relaxation time in graphene and related materials by orders of magnitude.

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Optical fingerprint of non-covalently functionalized transition metal dichalcogenides

Atomically thin transition metal dichalcogenides (TMDs) hold promising potential for applications in optoelectronics. Due to their direct band gap and the extraordinarily strong Coulomb interaction, TMDs exhibit efficient light-matter coupling and tightly bound excitons. Moreover, large spin orbit coupling in combination with circular dichroism allows for spin and valley selective optical excitation. As atomically thin materials, they are very sensitive to changes in the surrounding environment. This motivates a functionalization approach, where external molecules are adsorbed to the materials surface to tailor its optical properties. Here, we apply the density matrix theory to investigate the potential of non-covalently functionalized TMDs. Considering exemplary spiropyran molecules with a strong dipole moment, we predict spectral redshifts and the appearance of an additional side peak in the absorption spectrum of functionalized TMDs. We show that the molecular characteristics, e.g. coverage, orientation and dipole moment, crucially influence the optical properties of TMDs, leaving a unique optical fingerprint in the absorption spectrum. Furthermore, we find that the molecular dipole moments open a channel for coherent intervalley coupling between the high-symmetry K and K' points which may open new possibilities for spin-valleytronics application.

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Molecule signatures in photoluminescence spectra of transition metal dichalcogenides

Monolayer transition metal dichalcogenides (TMDs) show an optimal surface-to-volume ratio and are thus promising candidates for novel molecule sensor devices. It was recently predicted that a certain class of molecules exhibiting a large dipole moment can be detected through the activation of optically inaccessible (dark) excitonic states in absorption spectra of tungsten-based TMDs. In this work, we investigate the molecule signatures in photoluminescence spectra in dependence of a number of different experimentally accessible quantities, such as excitation density, temperature as well as molecular characteristics including the dipole moment and its orientation, molecule-TMD distance, molecular coverage and distribution. We show that under certain optimal conditions, even room temperature detection of molecules can be achieved.

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Exciton Relaxation Cascade in Two-dimensional Transition-metal dichalcogenides

Monolayers of transition-metal dichalcogenides (TMDs) are characterized by an extraordinarily strong Coulomb interaction giving rise to tightly bound excitons with binding energies of hundreds of meV. Excitons dominate the optical response as well as the ultrafast dynamics in TMDs. As a result, a microscopic understanding of exciton dynamics is the key for technological application of these materials. In spite of this immense importance, elementary processes guiding the formation and relaxation of excitons after optical excitation of an electron-hole plasma has remained unexplored to a large extent. Here, we provide a fully quantum mechanical description of momentum- and energy-resolved exciton dynamics in monolayer molybdenum diselenide (MoSe$_2$) including optical excitation, formation of excitons, radiative recombination as well as phonon-induced cascade-like relaxation down to the excitonic ground state. Based on the gained insights, we reveal experimentally measurable features in pump-probe spectra providing evidence for the exciton relaxation cascade.

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