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Eugene A. Eliseev

Publications and source records attributed to Eugene A. Eliseev.

At least 55 records · Page 3Linked to original sources
arXiv2024

Evolution of ferroelectric properties in SmxBi1-xFeO3 via automated Piezoresponse Force Microscopy across combinatorial spread libraries

Combinatorial spread libraries offer a unique approach to explore evolution of materials properties over the broad concentration, temperature, and growth parameter spaces. However, the traditional limitation of this approach is the requirement for the read-out of functional properties across the library. Here we demonstrate the application of automated Piezoresponse Force Microscopy (PFM) for the exploration of the physics in the SmxBi1-xFeO3 system with the ferroelectric-antiferroelectric morphotropic phase boundary. This approach relies on the synergy of the quantitative nature of PFM and the implementation of automated experiments that allows PFM-based gird sampling over macroscopic samples. The concentration dependence of pertinent ferroelectric parameters has been determined and used to develop the mathematical framework based on Ginzburg-Landau theory describing the evolution of these properties across the concentration space. We pose that combination of automated scanning probe microscope and combinatorial spread library approach will emerge as an efficient research paradigm to close the characterization gap in the high-throughput materials discovery. We make the data sets open to the community and hope that will stimulate other efforts to interpret and understand the physics of these systems.

cond-mat.mtrl-sci↗
arXiv2024

Strain-polarization coupling in the low-dimensional Van der Waals Ferrielectrics

Using the Landau-Ginzburg-Devonshire phenomenological approach we explore the strain-polarization coupling in the low-dimensional van der Waals ferrielectrics. We evolve the analytical model of the piezoelectric susceptibility of the material in response to the periodic strain modulation, such as caused by a surface acoustic wave. Numerical calculations are performed for recently discovered and poorly studied ultrathin layers of the van der Waals ferrielectric CuInP2S6, which are very promising candidates for advanced nanoelectronics. We obtained that the temperature dependences of the dielectric and piezoelectric susceptibilities, and elastic compliance of the ultrathin CuInP2S6 layer have a sharp maximum at the temperature of CuInP2S6 paraelectric-ferrielectric phase transition near 320 K. The magnitudes of the dielectric and piezoelectric susceptibilities, and elastic compliance depend significantly on the modulation period of the surface acoustic wave. Obtained results explore the potential of ultrathin CuInP2S6 layers for application in piezoelectric and straintronic devices.

cond-mat.mtrl-sci↗
arXiv2024

The Influence of Chemical Strains on the Electrocaloric Response, Polarization Morphology, Tetragonality and Negative Capacitance Effect of Ferroelectric Core-Shell Nanorods and Nanowires

Using Landau-Ginzburg-Devonshire (LGD) approach we proposed the analytical description of the chemical strains influence on the spontaneous polarization and electrocaloric response in ferroelectric core-shell nanorods. We postulate that the nanorod core presents a defect-free single-crystalline ferroelectric material, and the elastic defects are accumulated in the ultra-thin shell, where they can induce tensile or compressive chemical strains. The finite element modeling (FEM) based on the LGD approach reveals transitions of domain structure morphology induced by the chemical strains in the BaTiO3 nanorods. Namely, tensile chemical strains induce and support the single-domain state in the central part of the nanorod, while the curled domain structures appear near the unscreened or partially screened ends of the rod. The vortex-like domains propagate toward the central part of the rod and fill it entirely, when the rod is covered by a shell with compressive chemical strains above some critical value. The critical value depends on the nanorod sizes, aspect ratio, and screening conditions at its ends. Both analytical theory and FEM predict that the tensile chemical strains in the shell increase the nanorod polarization, lattice tetragonality, and electrocaloric response well-above the values corresponding to the bulk material. The physical reason of the increase is the strong electrostriction coupling between the mismatch-type elastic strains induced in the core by the chemical strains in the shell. Comparison with the earlier XRD data confirmed an increase of tetragonality ratio in tensiled BaTiO3 nanorods compared to the bulk material.

cond-mat.mtrl-sci↗
arXiv2024

Phase diagrams and polarization reversal in nanosized Hf$_x$Zr$_{1-x}$O$_{2-y}$

To describe the polar properties of the nanosized HfxZr1-xO2-y, we evolve the "effective" Landau-Ginzburg-Devonshire (LGD) model based on the parametrization of the Landau expansion coefficients for the polar and antipolar orderings. We have shown that the effective LGD model can predict the influence of screening conditions and size effects on phase diagrams, polarization reversal and structural properties of the nanosized HfxZr1-xO2-y of various shape and sizes. To verify the model, we use available experimental results for HfxZr1-xO2 thin films and oxygen-deficient HfO2-y nanoparticles prepared at different annealing conditions. X-ray diffraction, which was used to determine the phase composition of the HfO2-y nanoparticles, revealed the formation of the ferroelectric orthorhombic phase in them. Micro-Raman spectroscopy was used to explore the correlation of lattice dynamics and structural changes appearing in dependence on the oxygen vacancies concentration in the HfO2-y nanoparticles. Since our approach allows to determine the conditions (shape, sizes, Zr content and/or oxygen vacancies amount) for which the nanosized HfxZr1-xO2-y are ferroelectrics or antiferroelectrics, we hope that obtained results are useful for creation of next generation of Si-compatible ferroelectric gate oxide nanomaterials.

cond-mat.mes-hall↗
arXiv2023

Light-Induced Transitions of Polar State and Domain Morphology of Photo-Ferroelectric Nanoparticles

Using the Landau-Ginzburg-Devonshire approach, we study light-induced phase transitions, evolution of polar state and domain morphology in photo-ferroelectric nanoparticles (NPs). Light exposure increases the free carrier density near the NP surface and may in turn induce phase transitions from the nonpolar paraelectric to the polar ferroelectric phase. Using the uniaxial photo-ferroelectric Sn2P2S6 as an example, we show that visible light exposure induces the appearance and vanishing of striped, labyrinthine or curled domains and changes in the polarization switching hysteresis loop shape from paraelectric curves to double, pinched and single loops, as well as the shifting in the position of the tricritical point. Furthermore, we demonstrate that an ensemble of non-interacting photo-ferroelectric NPs may exhibit superparaelectric-like features at the tricritical point, such as strongly frequency-dependent giant piezoelectric and dielectric responses, which can potentially be exploited for piezoelectric applications.

cond-mat.mtrl-sci↗
arXiv2023

The strain-induced transitions of the piezoelectric, pyroelectric and electrocaloric properties of the CuInP$_2$S$_6$ films

The low-dimensional ferroelectrics, ferrielectrics and antiferroelectrics are of urgent scientific interest due to their unusual polar, piezoelectric, electrocaloric and pyroelectric properties. The strain engineering and strain control of the ferroelectric properties of layered 2D Van der Waals materials, such as CuInP$_2$(S,Se)$_6$ monolayers, thin films and nanoflakes, are of fundamental interest and especially promising for their advanced applications in nanoscale nonvolatile memories, energy conversion and storage, nano-coolers and sensors. Here, we study the polar, piezoelectric, electrocaloric and pyroelectric properties of thin strained films of a ferrielectric CuInP$_2$S$_6$ covered by semiconducting electrodes and reveal an unusually strong effect of a mismatch strain on these properties. In particular, the sign of the mismatch strain and its magnitude determine the complicated behavior of piezoelectric, electrocaloric and pyroelectric responses. The strain effect on these properties is opposite, i.e., "anomalous", in comparison with many other ferroelectric films, for which the out-of-plane remanent polarization, piezoelectric, electrocaloric and pyroelectric responses increase strongly for tensile strains and decrease or vanish for compressive strains.

cond-mat.mtrl-sci↗
arXiv2023

An effective Landau-type model of Hf$_x$Zr$_{1-x}$O$_2$ thin film - graphene nanostructure

To describe the charge-polarization coupling in the nanostructure formed by a thin Hf$_x$Zr$_{1-x}$O$_2$ film with a single-layer graphene as a top electrode, we develop the "effective" Landau-Ginzburg-Devonshire model. This approach is based on the parametrization of the Landau expansion coefficients for the polar (FE) and antipolar (AFE) orderings in thin Hf$_x$Zr$_{1-x}$O$_2$ films from a limited number of polarization-field curves and hysteresis loops. The Landau expansion coefficients are nonlinearly dependent on the film thickness h and Zr/[Hf+Zr] ratio x, in contrast to h-independent and linearly x-dependent expansion coefficients of a classical Landau energy. We explain the dependence of the Landau expansion coefficients by the strong nonmonotonic dependence of the polar properties on the Hf$_x$Zr$_{1-x}$O$_2$ film thickness, grain size and surface energy. The proposed Landau free energy with five "effective" expansion coefficients, which are interpolation functions of x and h, describes the continuous transformation of polarization dependences on applied electric field and hysteresis loop shapes induced by the changes of x and h in the range 0 < x < 1 and 5 nm < h < 35 nm. Using the effective free energy, we demonstrated that the polarization of Hf$_x$Zr$_{1-x}$O$_2$ films influences strongly on the graphene conductivity, and the full correlation between the distribution of polarization and charge carriers in graphene is revealed. In accordance with our modeling, the polarization of the (5 - 25) nm thick Hf$_x$Zr$_{1-x}$O$_2$ films, which are in the ferroelectric-like or antiferroelectric-like states for the chemical compositions 0.35 < x < 0.95, determine the concentration of carriers in graphene and can control its field dependence. The result can be promising for creation of next generation Si-compatible nonvolatile memories and graphene-ferroelectric FETs.

cond-mat.mtrl-sci↗
arXiv2023

Size-Induced High Electrocaloric Response of Dense Ferroelectric Nanocomposites

Analytical results obtained within Landau-Ginzburg-Devonshire approach and effective media models, predict that the synergy of size effects and Vegard stresses can significantly enhance the electrocaloric cooling (up to 7 times) of the BaTiO3 nanoparticles in comparison with a bulk BaTiO3. To compare with the considered effective media models, we measured the capacitance-voltage and current-voltage characteristics of the dense nanocomposites consisting of (28-35) vol.% BaTiO3 nanoparticles incorporated in organic polymers and determined experimentally the effective dielectric permittivity and losses of the composites. Generalizing obtained analytical results, various ferroelectric nanoparticles spontaneously stressed by elastic defects, such as oxygen vacancies or any other elastic dipoles, which create a strong chemical pressure, can cause the giant electrocaloric response of dense ferroelectric nanocomposites. We have shown that the advantages of the studied lead-free dense nanocomposites are the good tunability of electrocaloric cooling temperature due to the size effects in ferroelectric nanoparticles and the easy control of the high electrocaloric cooling by electric fields. This makes the dense ferroelectric nanocomposites promising for cooling of conventional and innovative electronic elements, such as FETs with high-temperature superconductor channels.

physics.app-ph↗
arXiv2023

Strain-Induced Polarization Enhancement in BaTiO$_3$ Core-Shell Nanoparticles

Despite fascinating experimental results, the influence of defects and elastic strains on the physical state of nanosized ferroelectrics is still poorly explored theoretically. One of unresolved theoretical problems is the analytical description of the strongly enhanced spontaneous polarization, piezoelectric response, and dielectric properties of ferroelectric oxide thin films and core-shell nanoparticles induced by elastic strains and stresses. In particular, the 10-nm quasi-spherical BaTiO3 core-shell nanoparticles reveal a giant spontaneous polarization up to 130 mu_C/cm2, where the physical origin is a large Ti off-centering. The available theoretical description cannot explain the giant spontaneous polarization observed in these spherical nanoparticles. This work analyzes polar properties of BaTiO3 core-shell spherical nanoparticles using the Landau-Ginzburg-Devonshire approach, which considers the nonlinear electrostriction coupling and large Vegard strains in the shell. We reveal that a spontaneous polarization greater than 50 mu_C/cm2 can be stable in a (10-100) nm BaTiO3 core at room temperature, where a 5 nm paraelectric shell is stretched by (3-6)% due to Vegard strains, which contribute to the elastic mismatch at the core-shell interface. The polarization value 50 mu_C/cm2 corresponds to high tetragonality ratios (1.02 - 1.04), which is further increased up to 100 mu_C/cm2 by higher Vegard strains and/or intrinsic surface stresses leading to unphysically high tetragonality ratios (1.08 - 1.16). The nonlinear electrostriction coupling and the elastic mismatch at the core-shell interface are key physical factors of the spontaneous polarization enhancement in the core. Doping with the highly-polarized core-shell nanoparticles can be useful in optoelectronics and nonlinear optics, electric field enhancement, reduced switching voltages, catalysis, and electrocaloric nanocoolers.

cond-mat.mtrl-sci↗
arXiv2023

Bending-induced isostructural transitions in ultrathin layers of van der Waals ferrielectrics

Using Landau-Ginzburg-Devonshire (LGD) phenomenological approach we analyze the bending-induced re-distribution of electric polarization and field, elastic stresses and strains inside ultrathin layers of van der Waals ferrielectrics. We consider a CuInP2S6 (CIPS) thin layer with fixed edges and suspended central part, the bending of which is induced by external forces. The unique aspect of CIPS is the existence of two ferrielectric states, FI1 and FI2, corresponding to big and small polarization values, which arise due to the specific four-well potential of the eighth-order LGD functional. When the CIPS layer is flat, the single-domain FI1 state is stable in the central part of the layer, and the FI2 states are stable near the fixed edges. With an increase of the layer bending below the critical value, the sizes of the FI2 states near the fixed edges decreases, and the size of the FI1 region increases. When the bending exceeds the critical value, the edge FI2 states disappear being substituted by the FI1 state, but they appear abruptly near the inflection regions and expand as the bending increases. The bending-induced isostructural FI1-FI2 transition is specific for the bended van der Waals ferrielectrics described by the eighth (or higher) order LGD functional with consideration of linear and nonlinear electrostriction couplings. The isostructural transition, which is revealed in the vicinity of room temperature, can significantly reduce the coercive voltage of ferroelectric polarization reversal in CIPS nanoflakes, allowing for the curvature-engineering control of various flexible nanodevices.

cond-mat.mtrl-sci↗
arXiv2023

Disentangling stress and curvature effects in layered 2D ferroelectric CuInP2S6

Nanoscale ferroelectric 2D materials offer unique opportunity to investigate curvature and strain effects on materials functionalities. Among these, CuInP2S6 (CIPS) has attracted tremendous research interest in recent years due to combination of room temperature ferroelectricity, scalability to a few layers thickness, and unique ferrielectric properties due to coexistence of 2 polar sublattices. Here, we explore the local curvature and strain effect on the polarization in CIPS via piezoresponse force microscopy and spectroscopy. To explain the observed behaviors and decouple the curvature and strain effects in 2D CIPS, we introduce finite element Landau-Ginzburg-Devonshire model. The results show that bending induces ferrielectric domains in CIPS, and the polarization-voltage hysteresis loops differ in bending and non-bending regions. Our simulation indicates that the flexoelectric effect can affect local polarization hysteresis. These studies open a novel pathway for the fabrication of curvature-engineered nanoelectronic devices.

cond-mat.mtrl-sci↗
arXiv2023

Anomalous Polarization Reversal in Strained Thin Films of CuInP$_2$S$_6$

Strain-induced transitions of polarization reversal in thin films of a ferrielectric CuInP$_2$S$_6$ (CIPS) with ideally-conductive electrodes is explored using the Landau-Ginzburg-Devonshire (LGD) approach with an eighth-order free energy expansion in polarization powers. Due to multiple potential wells, the height and position of which are temperature- and strain-dependent, the energy profiles of CIPS can flatten in the vicinity of the non-zero polarization states. This behavior differentiates these materials from classical ferroelectrics with the first or second order ferroelectric-paraelectric phase transition, for which potential energy profiles can be shallow or flat near the transition point only, corresponding to zero spontaneous polarization. Thereby we reveal an unusually strong effect of the mismatch strain on the out-of-plane polarization reversal, hysteresis loops shape, dielectric susceptibility, and piezoelectric response of CIPS films. In particular, by varying the sign of the mismatch strain and its magnitude in a narrow range, quasi-static hysteresis-less paraelectric curves can transform into double, triple, and other types of pinched and single hysteresis loops. The strain effect on the polarization reversal is opposite, i.e., "anomalous", in comparison with many other ferroelectric films in that the out-of-plane remanent polarization and coercive field increases strongly for tensile strains, meanwhile the polarization decreases or vanish for compressive strains. We explain the effect by "inverted" signs of linear and nonlinear electrostriction coupling coefficients of CIPS and their strong temperature dependence. For definite values of temperature and mismatch strain, the low-frequency hysteresis loops of polarization may exhibit negative slope in the relatively narrow range of external field amplitude and frequency.

cond-mat.mtrl-sci↗
arXiv2023

Stress-Induced Transformations of Polarization Switching in CuInP$_2$S$_6$ Nanoparticles

Using the Landau-Ginzburg-Devonshire approach, we study stress-induced transformations of polarization switching in ferrielectric CuInP2S6 nanoparticles for three different shapes: a disk, a sphere, and a needle. Semiconducting properties of a nanoparticle are modeled by a surface charge layer, whose effective screening length can be rather small due to the field-effect. We reveal a very strong and unusual influence of hydrostatic pressure on the appearance of polarization switching in CuInP2S6 nanoparticles, hysteresis loops shape, magnitude of the remanent polarization, and coercive fields, and explain the effects by the anomalous temperature dependence and "inverted" signs of CuInP2S6 linear and nonlinear electrostriction coupling coefficients. In particular, by varying the sign of the applied pressure (from tension to compression) and its magnitude (from zero to several hundreds of MPa), quasi-static hysteresis-less paraelectric curves can transform into double, triple, pinched, or single hysteresis loops. Due to the sufficiently wide temperature and pressure ranges of double, triple, and pinched hysteresis loop stability (at least in comparison with many other ferroelectrics), CuInP2S6 nanodisks can be of particular interest for applications in energy storage (in the region of double loops), CuInP2S6 nanospheres maybe suitable for dynamic random access multibit memory, and CuInP2S6 nanoneedles are promising for non-volatile multibit memory cells (in the regions of triple and pinched loops). The stress control of the polarization switching scenario allows the creation of advanced piezo-sensors based on CuInP2S6 nanocomposites.

physics.app-ph↗
arXiv2023

Phase transitions in ferroelectric domain walls

Despite multiple efforts, there exist many unsolved fundamental problems related with detection and analysis of internal polarization structure and related phase transitions in ferroelectric domain walls. Their solution can be very important for the progress in domain wall nanoelectronics and related applications in advanced memories and other information technologies. Here, we theoretically study the features of phase transitions in the domain walls, which are potentially detectable by the scanning probe capacitance microwave microscopy. The finite element modelling based on the Landau-Ginzburg-Devonshire theory is performed for the capacitance changes related with the domain wall motion in a multiaxial ferroelectric BaTiO$_3$.

cond-mat.mtrl-sci↗
arXiv2022

Screening-Induced Phase Transitions in Core-Shell Ferroic Nanoparticles

Using the Landau-Ginzburg-Devonshire approach, we study screening-induced phase transitions in core-shell ferroic nanoparticles for three different shapes: an oblate disk, a sphere, and a prolate needle. The nanoparticle is made of a ferroic CuInP2S6 core and covered by a "tunable" screening shell made of a phase-change material with a conductivity that varies as the material changes between semiconductor and metallic phases. We reveal a critical influence of the shell screening length on the phase transitions and spontaneous polarization of the nanoparticle core. Since the tunable screening shell allows the control of the polar state and phase diagrams of core-shell ferroic nanoparticles, the obtained results can be of particular interest for applications in nonvolatile memory cells.

cond-mat.mtrl-sci↗
arXiv2022

Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?

We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin layers of dielectric SiO2 and weak ferroelectric HfO2. It appeared possible to achieve a quasi-steady-state negative capacitance of the HfO2 layer, C_(HfO_2 )<0, if the layer thickness is close to the critical thickness of the size-induced ferroelectric-paraelectric phase transition. The quasi-steady-state negative capacitance, being a very slow-varying transient state of the ferroelectric, corresponds to a positive capacitance of the whole system, and so its appearance does not break any thermodynamic principle. Implementation of the quasi-steady-state negative capacitance C_ins of the gate insulator can open the principal possibility to reduce the MOSFET subthreshold swing below the critical value, and to decrease the gate voltage below the fundamental Boltzmann limit. However, we failed to found the parameters for which C_ins is negative in the quasi-steady states; and thus, the negative C_(HfO_2 ) cannot reduce the subthreshold swing below the fundamental limit. Nevertheless, the increase in C_ins, related with C_(HfO_2 )<0, can decrease the swing above the limit, reduce device heating during the operation cycles, and thus contribute to further improvements of the MOSFET performances.

physics.app-ph↗
arXiv2022

Ferroelectricity in Hafnia Controlled via Surface Electrochemical State

Ferroelectricity in binary oxides including hafnia and zirconia have riveted the attention of the scientific community due to highly unconventional physical mechanisms and the potential for integration of these materials into semiconductor workflows. Over the last decade, it has been argued that behaviors such as wake-up phenomena and an extreme sensitivity to electrode and processing conditions suggests that ferroelectricity in these materials is strongly coupled with additional mechanisms, with possible candidates including the ionic subsystem or strain. Here we argue that the properties of these materials emerge due to the interplay between the bulk competition between ferroelectric and structural instabilities, similar to that in classical antiferroelectrics, coupled with non-local screening mediated by the finite density of states at surfaces and internal interfaces. Via decoupling of electrochemical and electrostatic controls realized via environmental and ultra-high vacuum PFM, we show that these materials demonstrate a rich spectrum of ferroic behaviors including partial pressure- and temperature-induced transitions between FE and AFE behaviors. These behaviors are consistent with an antiferroionic model and suggest novel strategies for hafnia-based device optimization.

cond-mat.mtrl-sci↗
arXiv2022

Impact of 3D curvature on the polarization orientation in non-Ising domain walls

Ferroelectric domain boundaries are quasi-two-dimensional functional interfaces with high prospects for nanoelectronic applications. Despite their reduced dimensionality, they can exhibit complex non-Ising polarization configurations and unexpected physical properties. Here, the impact of the three-dimensional (3D) curvature on the polarization profile of nominally uncharged 180° domain walls in LiNbO3 is studied using second-harmonic generation microscopy and 3D polarimetry analysis. Correlations between the domain wall curvature and the variation of its internal polarization unfold in the form of modulations of the Néel-like character, which we attribute to the flexoelectric effect. While the Néel-like character originates mainly from the tilting of the domain wall, the internal polarization adjusts its orientation due to the synergetic upshot of dipolar and monopolar bound charges and their variation with the 3D curvature. Our results show that curved interfaces in solid crystals may offer a rich playground for tailoring nanoscale polar states.

cond-mat.mtrl-sci↗