arXiv subjects

Eugene A. Eliseev

Publications and source records attributed to Eugene A. Eliseev.

At least 109 records · Page 6Linked to original sources

arXiv2018

Control of polarization hysteresis temperature behavior by interfacial screening in thin ferroelectric films

Ferroelectric interfaces are unique model objects for fundamental studies of polar surface properties such as versatile screening mechanisms of spontaneous polarization by free carriers and possible ion exchange with ambient media. The effect of ionic adsorption by electrically-open (i.e. non-electroded) ferroelectric surface on polarization reversal in the ferroelectric had been investigated experimentally and theoretically, however the effect influence on the temperature behaviour of polarization hysteresis remains unexplored. Also the comparative theoretical analysis of the ferroelectric hysteresis for linear and nonlinear electronic screenings, and strongly nonlinear ionic screening of the spontaneous polarization was absent. In this work we study the free energy relief of a thin ferroelectric film covered by a screening charge layer of different nature and ultra-thin gap separating the film surface from the top electrode and calculate hysteresis loops of polarization and screening charge at different temperatures in the considered system. The dependence of the screening charge density on electric potential was considered for three basic models, namely for the linear Bardeen-type model of electronic surface states (BS), nonlinear Fermi-Dirac (FD) density of states describing two-dimensional electron gas at the film-gap interface, and strongly nonlinear Stephenson-Highland (SH) model describing the surface charge density of absorbed ions by Langmuir adsorption isotherms. Appeared that BS, FD and SH screening charges, which properties are principally different, determine the free energy relief (including polarization values corresponding to the free energy minima at different applied voltages) and control the shape of polarization hysteresis loops at different temperatures.

cond-mat.mes-hall↗

arXiv2018

Rotomagnetic coupling in fine grained multiferroic BiFeO3: Theory and experiment

Using Landau-Ginzburg-Devonshire (LGD) theory for BiFeO3 dense fine grained ceramics with quasi spherical grains and nanosized inter grain spaces enriched by elastic defects, we calculated a surprisingly strong size-induced increase of the AFM temperature caused by the joint action of rotomagnetic and magnetostrictive coupling. Notably that all parameters included in the LGD functional have been extracted from experiments, not assumed. Complementary we performed experiments for dense BiFeO3 ceramics, which revealed that the shift of antiferromagnetic transition to 690 K instead of 645 K for a single crystal. To explain theoretically the result, we consider the possibility to control antiferromagnetic state of multiferroic BiFeO3 via biquadratic antiferrodistortive rotomagnetic, rotoelectric, magnetostrictive and magnetoelectric couplings. According to our calculations the highest is the rotostriction contribution, the magnetostrictive and electrostriction contributions appeared smaller.

cond-mat.mtrl-sci↗

arXiv2018

Fixed Volume Effect on Polar Properties and Phase Diagrams of Ferroelectric Semi-ellipsoidal Nanoparticles

For advanced applications in modern industry it is very important to reduce the volume of ferroelectric nanoparticles without serious deterioration of their polar properties. In many practically important cases fixed volume (rather than fixed size) corresponds to realistic technological conditions of nanoparticles fabrication. The letter is focused on the theoretical study of the behavior of ferroelectric polarization, paramagnetoelectric coefficient and phase diagrams of semi-ellipsoidal nanoparticles with fixed volume V. Our approach combines the Landau-Ginzburg-Devonshire phenomenology, classical electrostatics and elasticity theory. Our results show that the size effects of the phase diagrams and polarization of semi-ellipsoidal BiFeO3 nanoparticles nontrivially depends on V. These findings provide a path to optimize the polar properties of nanoparticles by controlling their phase diagrams at a fixed volume.

cond-mat.mtrl-sci↗

arXiv2017

Effect of surface ionic screening on polarization reversal scenario in ferroelectric thin films: crossover from ferroionic to antiferroionic states

Nonlinear electrostatic interaction between the surface ions of electrochemical nature and ferroelectric dipoles gives rise to the coupled ferroionic states in nanoscale ferroelectrics. Here, we investigated the role of the surface ions formation energy value on the polarization states and polarization reversal mechanisms, domain structure and corresponding phase diagrams of ferroelectric thin films. Using 3D finite elements modeling we analyze the distribution and hysteresis loops of ferroelectric polarization and ionic charge, and dynamics of the domain states. These calculations performed over large parameter space delineate the regions of single- and poly- domain ferroelectric, ferroionic, antiferroionic and non-ferroelectric states as a function of surface ions formation energy, film thickness, applied voltage and temperature. We further map the analytical theory for 1D system onto effective Landau-Ginzburg free energy and establish the correspondence between the 3D numerical and 1D analytical results. This approach allows performing the overview of the phase diagrams of ferroionic systems and exploring the specific of switching and domain evolution phenomena.

cond-mat.mtrl-sci↗

arXiv2017

Flexoelectricity induced spatially modulated phases in ferroics and liquid crystals (Author review)

In the review we briefly analyze the state-of-art in the theory of flexoelectric phenomena and analyze how significantly the flexoelectric coupling can change the polar order parameter distribution in different ferroics and liquid crystals. The special attention in paid to the appearance of the spatially modulated phases induced by the flexocoupling in condensed and soft matter. Results of theoretical modeling performed in the framework of the Landau-Ginzburg-Devonshire formalism revealed that the general feature, inherent to both ferroics and liquid crystals, is the appearance of the spatially-modulated phases is taking place with increasing of the flexocoupling strength. We'd like to underline that theoretical and experimental study of flexoelectricity and related phenomena in nanosized and bulk ferroics, liquid crystals and related materials are very important for their advanced applications in nanoelectronics, memory devices and LC displays.

cond-mat.mtrl-sci↗

arXiv2017

Defect driven flexo-chemical coupling in thin ferroelectric films

Using Landau-Ginzburg-Devonshire theory, we considered the impact of the flexoelectro-chemical coupling on the size effects inpolar properties and phase transitions of thin ferroelectric films with a layer of elastic defects. We investigated a typical case, when defects fill a thin layer below the top film surface with a constant concentration creating an additional gradient of elastic fields. The defective surface of the film is not covered with an electrode, but instead with an ultra-thin layer of ambient screening charges, characterized by a surface screening length. This geometry is typical for the scanning probe piezoelectric force microscopy. Obtained results revealed an unexpectedly strong effect of the joint action of Vegard stresses and flexoelectric effect (shortly flexo-chemical coupling) on the ferroelectric transition temperature, distribution of the spontaneous polarization and elastic fields, domain wall structure and period in thin PbTiO3 films containing a layer of elastic defects. A nontrivial result is the ferroelectricity persisting at film thicknesses below 4 nm, temperatures lower than 350 K and relatively high surface screening length (~0.1 nm). The origin of this phenomenon is the re-building of the domain structure in the film (namely the cross-over from c-domain stripes to a-type closure domains) when its thickness decreases below 4 nm, conditioned by the flexoelectric coupling and facilitated by negative Vegard effect. For positive Vegard effect, thicker films exhibit the appearance of pronounced maxima on the thickness dependence of the transition temperature, whose position and height can be controlled by the defect type and concentration. The revealed features may have important implications for miniaturization of ferroelectric-based devices.

cond-mat.mtrl-sci↗

arXiv2017

Thermal Contrast in Nanoscale Infrared Spectroscopy (AFM-IR): Low Frequency Limit

The contrast formation mechanism in Nanoscale Infrared Spectroscopy (Nano-IR or AFM-IR) is analyzed for the boundary between two layers with different light absorption, thermal and elastic parameters. Analytical results derived in the decoupling approximation for low frequency limit show that the response amplitude is linearly proportional to the intensity of the illuminating light and thermal expansion coefficient. The spatial resolution between two dissimilar materials is linearly proportional to the sum of inverse light adsorption coefficients and to the effective thermal transfer length. The difference of displacements height across the T-shape boundary ("thermo-elastic step") is proportional to the difference of the adsorption coefficients and inversely proportional to the heat transfer coefficient. The step height becomes thickness-independent for thick films and proportional to h^2 in a very thin film

cond-mat.mtrl-sci↗

arXiv2017

Flexocoupling induced soft acoustic mode and the spatially modulated phases in ferroelectrics

Using the Landau Ginzburg Devonshire theory and scalar approximation, we derived analytical expressions for the singular points (zeros, complex ranges) of the acoustic phonon mode (A mode) frequency in dependence on the wave vector k and examined the conditions of the soft A modes appearance in a ferroelectric depending on the magnitude of the flexoelectric coefficient f and temperature T. We predict that if the magnitude of the flexocoefficient f is equal to the temperature-dependent critical value fcr(T) at the temperature T=T_IC, the A mode frequency tends to zero at k=kr_0 and the spontaneous polarization becomes spatially modulated in a temperature range T<T_IC.The comparison of calculated physical properties with measured ones are performed for some ferroelectrics with SMP phases.In particular, temperature dependence of the calculated direct and inverse static dielectric susceptibility is in an agreement with experimental data in Sn2P2(SexS1-x)6 that gives us additional background to predict flexo-coupling induced soft acoustic amplitudon-type mode in the SMP phase.The available experimental data on neutron scattering in organic incommensurate ferroelectric (CH3)3NCH2COO*CaCl2*2H2O are in a semi-quantitative agreement with our theoretical results. To quantify the theory, it is necessary to measure the frequency dependence of the A mode in a uniaxial ferroelectric with a spatially modulated phase in the temperature interval near its occurrence.

cond-mat.mtrl-sci↗

arXiv2017

Piezoresponse of ferroelectric films in ferroionic states: time and voltage dynamics

The interplay between electrochemical surface charges and bulk ferroelectricity in thin films gives rise to a continuum of coupled ferro-ionic states. These states are exquisitely sensitive to chemical and electric conditions at the surfaces, applied voltage, and oxygen pressure. Using the analytical approach combining the Ginzburg-Landau-Devonshire description of the ferroelectricity with Langmuir adsorption isotherm for the ions at the film surface, we have studied the temperature-, time- and field- dependent polarization changes and electromechanical response of the ferro-ionic states. The responses are found to be inseparable in thermodynamic equilibrium and at low frequencies of applied voltage. The states become separable in high frequency dynamic mode due to the several orders of magnitude difference in the relaxation times of ferroelectric polarization and surface ions charge density. These studies provide an insight into dynamic behavior of nanoscale ferroelectrics with open surface exposed to different kinds of electrochemically active gaseous surrounding.

cond-mat.mtrl-sci↗

arXiv2017

Ferroionic states in ferroelectric thin films

The electric coupling between surface ions and bulk ferroelectricity gives rise to a continuum of mixed states in ferroelectric thin films, exquisitely sensitive to temperature and external factors, such as applied voltage and oxygen pressure. Here we develop the comprehensive analytical description of these coupled ferroelectric and ionic ("ferroionic") states by combining the Ginzburg-Landau-Devonshire description of the ferroelectric properties of the film with Langmuir adsorption model for the electrochemical reaction at the film surface. We explore the thermodynamic and kinetic characteristics of the ferroionic states as a function of temperature, film thickness, and external electric potential. These studies provide a new insight into mesoscopic properties of ferroelectric thin films, whose surface is exposed to chemical environment as screening charges supplier.

cond-mat.mtrl-sci↗

arXiv2017

Tuning the Polar States of Ferroelectric Films via Surface Charges and Flexoelectricity

Using the self-consistent Landau-Ginzburg-Devonshire approach we simulate and analyze the spontaneous formation of the domain structure in thin ferroelectric films covered with the surface screening charge of the specific nature (Bardeen-type surface states). Hence we consider the competition between the screening and the domain formation as alternative ways to reduce the electrostatic energy and reveal unusual peculiarities of distributions of polarization, electric and elastic fields conditioned by the surface screening length and the flexocoupling strength. We have established that the critical thickness of the film and its transition temperature to a paraelectric phase strongly depend on the Bardeen screening length, while the flexocoupling affects the polarization rotation and closure domain structure and induces ribbon-like nano-scale domains in the film depth far from the top open surface. Hence the joint action of the surface screening (originating from e.g. the adsorption of ambient ions or surface states) and flexocoupling may remarkably modify polar and electromechanical properties of thin ferroelectric films.

cond-mat.mtrl-sci↗

arXiv2017

P-N junctions dynamics in graphene channel induced by ferroelectric domains motion

The p-n junctions dynamics in graphene channel induced by stripe domains nucleation, motion and reversal in a ferroelectric substrate is explored using self-consistent approach based on Landau-Ginzburg-Devonshire phenomenology combined with classical electrostatics. We revealed the extrinsic size effect in the dependence of the graphene channel conductivity on its length. For the case of perfect electric contact between the ferroelectric and graphene, relatively low gate voltages are required to induce the pronounced hysteresis of ferroelectric polarization and graphene charge in response to the periodic gate voltage. Pronounced nonlinear hysteresis of graphene conductance with a wide memory window corresponds to high amplitudes of gate voltage. We predict that the considered nano-structure "top gate/dielectric layer/graphene channel/ferroelectric substrate" can be a promising candidate for the fabrication of new generation of modulators and rectifiers based on the graphene p-n junctions.

cond-mat.mtrl-sci↗

arXiv2017

Size Effects of Ferroelectric and Magnetoelectric Properties of Semi-ellipsoidal Bismuth Ferrite Nanoparticles

Bismuth ferrite (BiFeO3) is one of the most promising multiferroics with a sufficiently high ferroelectric (FE) and antiferromagnetic transition temperatures, and magnetoelectric (ME) coupling coefficient at room temperature, and thus it is highly sensitive to the impact of cross-influence of applied electric and magnetic fields. According to the urgent demands of nanotechnology miniaturization for ultra-high density data storage in advanced nonvolatile memory cells, it is very important to reduce the sizes of multiferroic nanoparticles in the self-assembled arrays without serious deterioration of their properties. We study size effects of the phase diagrams, FE and ME properties of semi-ellipsoidal BiFeO3 nanoparticles clamped to a rigid conductive substrate. The spatial distribution of the spontaneous polarization vector inside the nanoparticles, phase diagrams and paramagnetoelectric (PME) coefficient were calculated in the framework of modified Landau-Ginzburg-Devonshire (LGD) approach. Analytical expressions were derived for the dependences of the FE transition temperature, average polarization, linear dielectric susceptibility and PME coefficient on the particle sizes for a general case of a semi-ellipsoidal nanoparticles with three different semi-axes a, b and height c. The analyses of the obtained results leads to the conclusion that the size effect of the phase diagrams, spontaneous polarization and PME coefficient is rather sensitive to the particle sizes aspect ratio in the polarization direction, and less sensitive to the absolute values of the sizes per se.

cond-mat.mtrl-sci↗

arXiv2016

Missed surface waves in non-piezoelectric solids

The physical processes taking place at the surface and near the surface of solids is so rich and versatile that sometimes they seem to be the inexhaustible subject of fundamental research. In particular, since the discovery by Lord Rayleigh surface waves in solids focus increased attention of scientists, because their experimental and theoretical studies can serve as the source of unique information about the surface impact on the dynamics and structure of the atomic lattice, structural instabilities and phase transitions induced by the surface, and explore the properties of phonons in spatially-confined systems The existence of purely shear surface wave is impossible in non-piezoelectrics within the framework of the classical theory of elasticity, because the Rayleigh surface waves have different polarization and are the mixture of shear and dilatational waves. We showed that the "forbidden" shear surface wave (shortly Flexo-SW) can propagate near the surface of all crystalline dielectrics due to the omnipresent flexoelectric coupling. The appearance and penetration depth of the Flexo-SW is ruled by the flexocoupling strength. In particular the penetration depth of transverse acoustic mode diverges in the absence of the flexoelectric coupling and so these waves become indistinguishable from the bulk waves. For paraelectrics such as strontium titanate with typical flexoeletric coefficients (~2V) the penetration depth of the Flexo-SW can reach more than tens microns at THz frequencies. The circumstances can explain the absence of experimental observations of the missed surface waves in thick layers and bulk materials. However we predict that the peaks of neutron intensity corresponding to the surface Flexo-SW and bulk phonon modes can be separated in non-piezoelectric thin films of thickness ~(20 - 50)nm.

cond-mat.mtrl-sci↗

arXiv2016

Flexocoupling impact on the kinetics of polarization reversal

The impact of flexoelectric coupling on polarization reversal kinetics and space charge dynamics in thin films of ferroelectric-semiconductors has been theoretically studied. The relaxation-type Landau-Khalatnikov equation together with the Poisson equation and the theory of elasticity equations have been used to calculate in a self-consistent way the spatial-temporal development of ferroelectric polarization, electric potential and space charge, elastic stresses, strains and their gradients. The analysis of the obtained results reveals a moderate increase of the flexocoupling influence on the polarization, elastic strain, electric potential and space charge distribution dynamics with the decrease of a ferroelectric film thickness. In contrast, the dependence of polarization switching time on the applied electric field is strongly affected by the flexocoupling strength. The polarization reversal process consists typically of two stages, the first stage has no characteristic time, while the second one exhibits a switching time strongly dependent on the applied electric field.

cond-mat.mtrl-sci↗

arXiv2016

Extrinsic size effect of pyroelectric response of ferroelectric films

We developed a theoretical model for the calculation of the main characteristics of pyroelectric response of pyroactive multilayer structures, which are basic elements of modern pyroelectric detectors of radiation and other transducers. In the framework of the proposed model, the dependences of the pyroelectric response frequency spectra on the ferroelectric film thickness have been investigated. It was found that a pronounced extrinsic size effect is inherent to the pyroelectric response frequency spectra, such as the strong thickness dependence of the response maximal value and its frequency position. Thickness dependences of the frequency position of the pyroelectric response maximum and the optimal thickness of the pyroactive ferroelectric film are calculated. The frequency spectra of the pyroelectric current and voltage calculated theoretically are in quantitative agreement with experimental ones for Al/P(VDF-TrFE)/Ti/Si pyroactive structure. Developed procedure is important for improving the sensitivity of pyroelectric devices. Obtained analytical expressions allow us to optimize the performances of pyroactive elements using the existence of the size effect, which depend on pyroactive layer and substrate thicknesses, as well as on the conditions of heat transfer and exchange at corresponding boundaries of the pyroactive structure.

cond-mat.mtrl-sci↗

arXiv2016

Flexocoupling impact on the size effects of piezo- response and conductance in mixed-type ferroelectrics-semiconductors under applied pressure

Flexocoupling impact on the size effects of the spontaneous polarization, effective piezo-response, elastic strain and compliance, carrier concentration and piezo-conductance have been calculated in thin films of ferroelectric semiconductors with mixed-type conductivity under applied pressure. Analysis of the self-consistent calculation results revealed that the thickness dependences of aforementioned physical quantities, calculated at zero and nonzero flexoelectric couplings, are very similar under zero applied pressure, but become strongly different under the application of external pressure pext. At that the differences become noticeably stronger for the film surface under compression than under tension. The impact of the Vegard mechanism on the size effects is weaker in comparison with flexocoupling except for the thickness dependence of the piezo-conductance. Without flexoelectric coupling the studied physical quantities manifest conventional peculiarities that are characteristic of the size-induced phase transitions. Namely, when the film thickness h approaches the critical thickness hcr the transition to paraelectric phase occurs. The combined effect of flexoelectric coupling and external pressure induces polarizations at the film surfaces, which cause the electric built-in field that destroys the thickness-induced phase transition to paraelectric phase at h= hcr and induces the electret-like state with irreversible spontaneous polarization at h<hcr. The built-in field leads to noticeable increase of the average strain and elastic compliance under the film thickness decrease below hcr that scales as 1/h at small thicknesses h. The changes of the electron concentration by several orders of magnitude under positive or negative pressures can lead to the occurrence of high- or low-conductivity states, i.e. the nonvolatile piezo-resistive switching.

cond-mat.mtrl-sci↗

arXiv2016

Ballistic conductivity of graphene channel with p-n junction on ferroelectric domain wall

We study the impact of the ferroelectric domain wall on the ballistic conductance of the single-layer graphene channel in the heterostructure graphene / physical gap / ferroelectric film using Wentzel-Kramers-Brillouin approximation. Both self-consistent numerical modeling of the electric field and space charge dynamics in the heterostructure and approximate analytical theory show that the domain wall contact with the surface creates p-n junction in graphene channel. We calculated that the carriers' concentration induced in graphene by uncompensated ferroelectric dipoles originated from the spontaneous polarization abrupt near the surface can reach the values of 1019 m-2 order, which is in two orders higher than it can be obtained for the gate doped graphene on non-ferroelectric substrates. Therefore we predict that graphene channel with the p-n junction caused by ferroelectric domain wall would be characterized by rather high ballistic conductivity.

cond-mat.mtrl-sci↗