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Eugenio Coronado

Publications and source records attributed to Eugenio Coronado.

At least 19 recordsLinked to original sources

Stacking-tuned superconductivity and competing charge-density-wave states in NbSe$_2$

Layer stacking provides a powerful yet underexplored route for reshaping collective quantum order in van der Waals materials. Here we use high-resolution scanning tunneling microscopy and spectroscopy to show that the stacking sequence alone can qualitatively transform the charge density and superconducting orders in NbSe$_2$, while preserving the same in-plane atomic structure. Comparing the 4Ha and 2H polytypes, we find that, unlike the ubiquitous triangular incommensurate $3Q^\mathrm{I}$ order of 2H-NbSe$_2$, 4Ha-NbSe$_2$ hosts two competing CDW states with no measurable correlation with local strain: a unidirectional commensurate $1Q^\mathrm{C}$ phase and a triangular incommensurate $3Q^\mathrm{I}$ phase, with $Q^\mathrm{I}=Q^\mathrm{C}+δ$. We introduce a phase-resolved analysis that directly maps the gradient of the CDW phases and reveals vortices bound to the $1Q^\mathrm{C}$ - $3Q^\mathrm{I}$ phase boundaries. These vortices accommodate the momentum mismatch $δ$ through abrupt $2π$ phase slips, providing a mechanism by which distinct charge orders coexist. Superconductivity is also reshaped by stacking, while both polytypes exhibit multiband pairing.

cond-mat.supr-con

Nanoscale resistive switching in electrodeposited MOF Prussian blue analogs driven by K-ion intercalation probed by C-AFM

K-ion intercalation in Prussian blue analogs (PBAs) is a well-established charge storage mechanism in potassium-ion batteries; here, we demonstrate that this same ion intercalation process is the basis for nanoscale resistive switching behavior in PBA-base memristive devices. Using C-AFM, we directly visualize and electrically control this intercalation process within sub-100 nm volumes, revealing reversible, localized conductance modulation driven by K-ion intercalation and Fe^(2+)/Fe^(3+) redox reconfiguration. This nanoscale operability highlights the exceptional potential of PBAs for high-scalable and low-dimension memristor-based devices integration. Due to their modular composition, PBAs constitute a chemically rich, earth-abundant materials platform whose electronic and ionic properties can be precisely tuned for specific device functions. K-ion intercalation PBA-based memristor devices, with their single-step, aqueous, and room-temperature fabrication, enable low-cost, large-scale processing compatible with CMOS, without any additional post-fabrication processing. Our findings establish PBAs as a new class of intercalation memristors with scalable nanoscale switching and exceptional materials versatility, toward highly integrated neuromorphic and non-volatile memory technologies. This work provides the first demonstration of intercalation-driven resistive switching under ultrafast voltage sweeps, with PW operating up to 200 V/s and PB up to 50 V/s. This unprecedented speed establishes PBAs as a distinct, high-rate class of K-ion intercalation memristors suitable for fast, high-density neuromorphic and memory applications.

cond-mat.mtrl-sci

One-Dimensional Materials Supported in Two-Dimensional van der Waals Metal-Organic Frameworks with Optical Anisotropy Switching via Twist-Engineering

Van der Waals (vdW) materials provide a platform to study and control the physical properties of low-dimensional materials. While strategies developed for two-dimensional (2D) crystals are not directly transferable to one-dimensional (1D) systems, we can benefit from them by creating layers formed by interconnected chains. Here, we develop a molecular strategy to illustrate this concept consisting of assembling 1D materials in 2D metal-organic frameworks (MOFs). Crystals of [FeX(pzX)(bpy)] (X = Cl, F; pz = pyrazole; bpy = bipyridine) consist of iron chains along the b-axis, crosslinked via bpy ligands along the a-axis to form 2D layers, stacked along the c-axis via vdW forces. This structural anisotropy manifests itself in highly-anisotropic optical properties, as demonstrated by optical measurements in the visible and terahertz ranges, results which are supported by DFT calculations. Chemical substitution enables the tuning of the optical properties, as exemplified by the photoluminescence of the Cl-derivative, which is quenched for the F-derivative. Thin-layers are obtained by mechanical exfoliation, and their optical properties are further tuned through the fabrication of orthogonally-twisted vdW heterostructures, enabling to effectively switch-off the optical anisotropy. Our work highlights the chemical flexibility of vdW layered MOFs as a platform for designing and manipulating 1D architectures.

cond-mat.mtrl-sci

Anomalous Nonlinear Magnetoconductivity in van der Waals Magnet CrSBr

Nonlinear magnetoconductivity (NLMC) is a nonreciprocal transport response arising in non-centrosymmetric materials. However, this ordinary NLMC signal vanishes at zero magnetic field, limiting its potential for applications. Here, we report the observation of an anomalous NLMC controlled by internal order parameters such as the magnetization or Néel vectors. We achieve this response by breaking both inversion and time-reversal symmetry in artificial van der Waals heterostructures based on the magnetic CrSBr and insulating hBN. The nonreciprocal signal can be tuned between two different states in ferromagnetic monolayer CrSBr and among four different states in antiferromagnetic bilayer CrSBr, thanks to its metamagnetic transition. Remarkably, this output signal in the ferromagnetic (antiferromagnetic) state of CrSBr is three (one) orders of magnitude higher than those previously measured. A conductivity scaling analysis reveals the Berry connection polarizability as the origin of the anomalous NLMC. Our results pave the way for high-frequency rectifiers with magnetically switchable output polarity as well as for an efficient electrical readout of the magnetic state of antiferromagnetic materials.

cond-mat.mes-hall

Galvanic intercalation of molecular cations into van der Waals materials

The intercalation of molecular species between the layers of van der Waals (vdW) crystals is a powerful approach to combine the remarkable physical properties of vdW materials with the chemical versatility of organic molecules. However, the full transformative potential of molecular intercalation remains underexplored, largely due to the lack of simple, broadly applicable methods that preserve high crystalline quality down to the few-layer limit. Here, we introduce a simple galvanic approach to intercalate different molecules into various vdW materials under ambient conditions, leveraging the low reduction potential of selected metals. We employ our method, which is particularly well-suited for the in-situ intercalation of few-layer-thick crystals, to intercalate nine vdW materials, including magnets and superconductors, with molecules ranging from conventional alkylammonium ions to metallorganic and bio-inspired chiral cations. Notably, intercalation leads to an unprecedented transition from antiferromagnetic to ferrimagnetic ordering in α-RuCl3 and to a molecule-dependent enhancement of the superconducting transition in 2H-TaS2. These results establish our approach as a versatile technique for engineering atomically thin quantum materials and heterostructures, unlocking the transformative effects of molecular intercalation.

cond-mat.mtrl-sci

Ferromagnetism above 200 K in organic-ion intercalated CrSBr

CrSBr is a van der Waals magnetic semiconductor exhibiting antiferromagnetic order below 140 K. It has emerged as a promising platform for engineering 2D magnetism because its intertwined electronic, optical, and magnetic properties can be profoundly modified via external stimuli such as electrical gating or magnetic fields. However, other strategies for tuning magnetism in layered materials, such as molecular intercalation, remain largely unexplored for CrSBr. Here, we demonstrate that the intercalation of tetramethylammonium (TMA) and tetrapropylammonium (TPA) ions into CrSBr induces a transition from antiferromagnetic to ferromagnetic order, while significantly enhancing the magnetic transition temperature to 190 K (TMA) and 230 K (TPA). The resulting intercalates are air-stable and exhibit large, hysteretic magnetoresistance exceeding 60% at 50 K in the TPA case. Besides, intercalation introduces symmetry-breaking structural changes in each CrSBr plane, revealed by Raman microscopy and corroborated by density functional theory (DFT) calculations. These findings highlight molecular intercalation as a powerful and versatile route to tailor the magnetic properties of CrSBr and unlock its potential to fabricate robust, high-temperature 2D magnetic devices.

cond-mat.mtrl-sci

Unveiling Spin Transition at Single Particle Level in Levitating Spin Crossover Nanoparticles

The ability to control and understand the phase transitions of individual nanoscale building blocks is key to advancing the next generation of low-power reconfigurable nanophotonic devices. To address this critical challenge, molecular nanoparticles (NPs) exhibiting a spin crossover (SCO) phenomenon are trapped by coupling a quadrupole Paul trap with a multi-spectral polarization-resolved scattering microscope. This contact-free platform simultaneously confines, optically excites, and monitors the spin transition in Fe(II)-triazole NPs in a pressure-tunable environment, eliminating substrate artifacts. Thus, we show light-driven manipulation of the spin transition in levitating NPs free from substrate-induced effects. Using the robust spin bistability near room temperature of our SCO system, we quantify reversible opto-volumetric changes of up to 6%, revealing precise switching thresholds at the single-particle level. Independent pressure modulation produces a comparable size increase, confirming mechanical control over the same bistable transition. These results constitute full real-time control and readout of spin states in levitating SCO NPs, charting a route toward their integration into ultralow-power optical switches, data-storage elements, and nanoscale sensors.

physics.optics

Gapless superconductivity from extremely dilute magnetic disorder in 2H-NbSe2-xSx

Most superconducting materials exhibit a vanishing density of states at the Fermi level and Anderson's theorem posits that the superconducting gap is robust against nonmagnetic disorder. Although dilute magnetic impurities lead to localized in-gap states, these states typically have no bearing on the material's bulk superconducting properties. However, numerous experiments reveal a finite density of states at the Fermi level in systems with an apparently negligible number of magnetic impurities. Here, using scanning tunneling microscopy and self-consistent Bogoliubov-de Gennes calculations, we find that gapless superconductivity emerges in 2H-NbSe2-xSx at remarkably low magnetic impurity concentrations. Furthermore, our density functional theory calculations and in-gap quasiparticle interference measurements demonstrate that the Se-S substitution significantly modifies the band structure. This modification favours nesting and dictates the in-gap scattering for x>0, in stark contrast to the dominant charge density wave interactions in pure 2H-NbSe2. Our findings reveal an unusual superconducting response to disorder and highlight the importance of incorporating material-specific band structures in the understanding of a superconductor's response to even very low concentrations of magnetic impurities.

cond-mat.supr-con

Tunable magnons in a dual-gated 2D antiferromagnet

The layered antiferromagnet CrSBr features magnons coupled to other quasiparticles, including excitons and polaritons, enabling their easy optical accessibility. In this work, we investigate the tunability of magnons in few-layered devices in response to changes in carrier density and the application of a perpendicular electric field. We demonstrate an on-chip tunability of the in- and out-of-phase magnon frequencies by up to 2 GHz. While the frequencies of both modes increase with the electron density, we observe an asymmetric response with respect to the electric field in a dual-gated trilayer device. To understand the mechanism of this disparity, we develop a layer-resolved macrospin model describing the magnetic dynamics in thin, non-uniformly doped devices. Through this model we establish the doping- and electric-field-dependence of the exchange interaction, magnetic anisotropy, and magnetic moment of individual layers. Our results advance the applications of gate-tunable magnonic devices based on 2D materials.

cond-mat.mes-hall

Nonvolatile Electric Control of Antiferromagnet CrSBr

van der Waals magnets are emerging as a promising material platform for electric field control of magnetism, offering a pathway towards the elimination of external magnetic fields from spintronic devices. A further step is the integration of such magnets with electrical gating components which would enable nonvolatile control of magnetic states. However, this approach remains unexplored for antiferromagnets, despite their growing significance in spintronics. Here, we demonstrate nonvolatile electric field control of magnetoelectric characteristics in van der Waals antiferromagnet CrSBr. We integrate a CrSBr channel in a flash-memory architecture featuring charge trapping graphene multilayers. The electrical gate operation triggers a nonvolatile 200 % change in the antiferromagnetic state of CrSBr resistance by manipulating electron accumulation/depletion. Moreover, the nonvolatile gate modulates the metamagnetic transition field of CrSBr and the magnitude of magnetoresistance. Our findings highlight the potential of manipulating magnetic properties of antiferromagnetic semiconductors in a nonvolatile way.

cond-mat.mes-hall

Programmable Magnetic Hysteresis in Orthogonally-Twisted Two-Dimensional CrSBr Magnets via Stacking Engineering

Twisting two-dimensional van der Waals magnets allows the formation and control of different spin-textures, as skyrmions or magnetic domains. Beyond the rotation angle, different spin reversal processes can be engineered by increasing the number of magnetic layers forming the twisted van der Waals heterostructure. Here, we consider pristine monolayers and bilayers of the A-type antiferromagnet CrSBr as building blocks. By rotating 90 degrees these units, we fabricate symmetric (monolayer/monolayer and bilayer/bilayer) and asymmetric (monolayer/bilayer) heterostructures. The magneto-transport properties reveal the appearance of magnetic hysteresis, which is highly dependent upon the magnitude and direction of the applied magnetic field and is determined not only by the twist-angle but also by the number of layers forming the stack. This high tunability allows switching between volatile and non-volatile magnetic memory at zero-field and controlling the appearance of abrupt magnetic reversal processes at either negative or positive field values on demand. The phenomenology is rationalized based on the different spin-switching processes occurring in the layers, as supported by micromagnetic simulations. Our results highlight the combination between twist-angle and number of layers as key elements for engineering spin-switching reversals in twisted magnets, of interest towards the miniaturization of spintronic devices and realizing novel spin textures.

cond-mat.mes-hall

Quantum Spin Hall Effect in Magnetic Graphene

A promising approach to attain long-distance coherent spin propagation is accessing topological spin-polarized edge states in graphene. Achieving this without external magnetic fields necessitates engineering graphene band structure, obtainable through proximity effects in van der Waals heterostructures. In particular, proximity-induced staggered potentials and spin-orbit coupling are expected to form a topological bulk gap in graphene with gapless helical edge states that are robust against disorder. In this work, we detect the spin-polarized helical edge transport in graphene at zero external magnetic field, allowed by the proximity of an interlayer antiferromagnet, CrPS$_4$. We show the coexistence of the quantum spin Hall (QSH) states and magnetism in graphene, where the induced spin-orbit and exchange couplings also give rise to a large anomalous Hall (AH) effect. The detection of the QSH states at zero external magnetic field, together with the AH signal that persists up to room temperature, opens the route for practical applications of magnetic graphene in quantum spintronic circuitries.

cond-mat.mes-hall

Highly polarized single photon emitter from intrinsic localized excitons in a WSe2/CrSBr heterostructure

Single photons emitters (SPEs) are key components in quantum information applications and are commonly generated in 2D materials by inhomogeneous strain engineering. Here, we report an alternative approach that involves a 2D semiconductor/2D magnet heterostructure. The optical study of the WSe2/CrSBr heterostructures reveals several new emission lines at lower energies compared to characteristic WSe2 emissions, that are assigned to localized excitons. Further investigation demonstrates that one of these emergent lines is an SPE with a strong valley polarization response and large energy shift with the field-induced metamagnetic transition in CrSBr, linking it to the magnetic proximity effect of the adjacent CrSBr layer. In contrast to previous reports on WSe2 that only allow tuning of the SPEs by out-of-plane magnetic field, our emitter is sensitive to both in- and out-of-plane fields. Our findings demonstrate the potential of this approach for improved control and polarization of SPEs in 2D materials.

cond-mat.mtrl-sci

High harmonic spectroscopy reveals anisotropy of the Mott to Charge-Density-Wave phase transition in TiSe$_2$

This work explores the use of polarization-resolved high harmonic generation (HHG) spectroscopy to investigate the quantum phases and transitions in the correlated charge density wave (CDW) phase of TiSe$_2$. Unlike previous studies focusing on crystallographic changes, the research examines the reordering that occurs within the CDW phase as the material is cooled from room temperature to 14 K. By linking ultrafast field-driven dynamics to the material's potential landscape, the study demonstrates how HHG is sensitive to quantum phase transitions. The findings reveal an anisotropic component below the CDW transition temperature, providing new insights into the nature of this phase. The investigation highlights the interplay between linear and nonlinear optical responses and their departure from simple perturbative dynamics, offering a fresh perspective on correlated quantum phases in condensed matter systems.

cond-mat.str-el

Probing Short-Range Correlations in the van der Waals Magnet CrSBr by Small-Angle Neutron Scattering

The layered metamagnet CrSBr offers a rich interplay between magnetic, optical and electrical properties that can be extended down to the two-dimensional (2D) limit. Despite the extensive research regarding the long-range magnetic order in magnetic van der Waals materials, short-range correlations have been loosely investigated. By using Small-Angle Neutron Scattering (SANS) we show the formation of short-range magnetic regions in CrSBr with correlation lengths that increase upon cooling up to ca. 3 nm at the antiferromagnetic ordering temperature (TN ~ 140 K). Interestingly, these ferromagnetic correlations start developing below 200 K, i.e., well above TN. Below TN, these correlations rapidly decrease and are negligible at low-temperatures. The experimental results are well-reproduced by an effective spin Hamiltonian, which pinpoints that the short-range correlations in CrSBr are intrinsic to the monolayer limit, and discard the appearance of any frustrated phase in CrSBr at low-temperatures within our experimental window between 2 and 200 nm. Overall, our results are compatible with a spin freezing scenario of the magnetic fluctuations in CrSBr and highlight SANS as a powerful technique for characterizing the rich physical phenomenology beyond the long-range order paradigm offered by van der Waals magnets.

cond-mat.str-el

Tracing d-d transitions in FePS$_{3}$ on ultrafast time scales

Excitations between localized 3d states of transition metal ions within crystalline solids, commonly known as d-d transitions, play a pivotal role in diverse phenomena across solid state physics, materials science, and chemistry. These transitions contribute to the coloration in transition metal oxides, catalytic processes on oxide surfaces, and high-temperature superconductivity. They also couple optical excitation to quantized collective phenomena such as phonons and magnons in magnetic systems. Until now, an experimental method to unravel the complex quasiparticle dynamics associated with d-d transitions has remained elusive. We bridge this gap by demonstrating that d-d transitions can be distinctly traced in momentum space and time using time- and angle-resolved photoelectron spectroscopy (trARPES). Through this approach, we can assign specific momentum-dependent characteristics and elucidate the decay mechanisms of specific d-d transitions in FePS$_{3}$, a two-dimensional van der Waals antiferromagnet with a rich array of quantum phenomena stemming from d-d transitions. This study pioneers the use of ARPES in probing the dynamics of d-d transitions across a wide spectrum of solid-state systems.

cond-mat.mtrl-sci

Multistep magnetization switching in orthogonally twisted ferromagnetic monolayers

The advent of twist-engineering in two-dimensional (2D) crystals enables the design of van der Waals (vdW) heterostructures exhibiting emergent properties. In the case of magnets, this approach can afford artificial antiferromagnets with tailored spin arrangements. Here, we fabricate an orthogonally-twisted bilayer by twisting 90 degrees two CrSBr ferromagnetic monolayers with an easy-axis in-plane anisotropy. The magneto-transport properties reveal multistep magnetization switching with a magnetic hysteresis opening, that is absent in the pristine case. By tuning the magnetic field, we modulate the remanent state and coercivity and select between hysteretic and non-hysteretic magneto-resistance scenarios. This complexity pinpoints spin anisotropy as a key aspect in twisted magnetic superlattices. Our results highlight the control over the magnetic properties in vdW heterostructures, leading to a variety of field-induced phenomena and opening a fruitful playground for creating desired magnetic symmetries and manipulating non-collinear magnetic configurations.

cond-mat.mes-hall

Magnetic imaging and domain nucleation in CrSBr down to the 2D limit

Recent advancements in 2D materials have revealed the potential of van der Waals magnets, and specifically of their magnetic anisotropy that allows applications down to the 2D limit. Among these materials, CrSBr has emerged as a promising candidate, because its intriguing magnetic and electronic properties have appeal for both fundamental and applied research in spintronics or magnonics. Here, nano SQUID-on-tip (SOT) microscopy is used to obtain direct magnetic imaging of CrSBr flakes with thicknesses ranging from monolayer (N=1) to few-layer (N=5). The ferromagnetic order is preserved down to the monolayer, while the antiferromagnetic coupling of the layers starts from the bilayer case. For odd layers, at zero applied magnetic field, the stray field resulting from the uncompensated layer is directly imaged. The progressive spin reorientation along the out-of-plane direction (hard axis) is also measured with a finite applied magnetic field, allowing to evaluate the anisotropy constant, which remains stable down to the monolayer and is close to the bulk value. Finally, by selecting the applied magnetic field protocol, the formation of Néel magnetic domain walls is observed down to the single layer limit.

cond-mat.mes-hall