arXiv subjects

Eunjeong Kim

Publications and source records attributed to Eunjeong Kim.

3 recordsLinked to original sources

arXiv2026

MemSpec: Memory-Aware Runtime for Adaptive Draft Scheduling in Speculative Decoding on Edge Devices

Speculative decoding accelerates autoregressive large language model (LLM) inference by using a lightweight draft model to speculate multiple tokens, reducing expensive target model decoding steps. Its effectiveness depends heavily on draft selection, motivating adaptive methods that exploit variation across inputs and generation stages. On memory-constrained edge devices, however, these methods often fail to improve end-to-end throughput due to the overhead of switching between draft models. We identify a key limitation in this setting: the mismatch between draft selection and draft availability under tight memory budgets. To address this challenge, we present MemSpec, a prediction-guided, memory-aware runtime for adaptive speculative decoding on edge devices. MemSpec decouples draft selection from execution through proactive resident working-set management. A lightweight predictor estimates draft effectiveness from prompt and generation context, while a memory-aware scheduler reduces reactive model loading overhead. Experiments on a Jetson Orin Nano show that MemSpec improves steady-state generation throughput by 40.7% on average over state-of-the-art bandit-based adaptive methods while closely approaching the oracle upper bound.

cs.OS↗

arXiv2025

Growth and Structure of alpha-Ta films for Quantum Circuit Integration

Tantalum films incorporated into superconducting circuits have exhibited low surface losses, resulting in long-lived qubit states. Remaining loss pathways originate in microscopic defects which manifest as two level systems (TLS) at low temperature. These defects limit performance, so careful attention to tantalum film structures is critical for optimal use in quantum devices. In this work, we investigate the growth of tantalum using magnetron sputtering on sapphire, Si, and photoresist substrates. In the case of sapphire, we present procedures for growth of fully-oriented films with alpha-Ta [1 1 1] // Al2O3 [0 0 0 1] and alpha-Ta [1 -1 0] // Al2O3 [1 0 -1 0] orientational relationships, and having residual resistivity ratios (RRR) ~ 60 for 220 nm thick films. On Si, we find a complex grain texturing with Ta [1 1 0] normal to the substrate and RRR ~ 30. We further demonstrate airbridge fabrication using Nb to nucleate alpha-Ta on photoresist surfaces. For the films on sapphire, resonators show TLS-limited quality factors of 1.3 +/- 0.3 x 10^6 at 10 mK (for waveguide gap and conductor widths of 3 microns and 6 microns, respectively). Structural characterization using scanning electron microscopy, X-ray diffraction, low temperature transport, secondary ion mass spectrometry, and transmission electron microscopy reveal the dependence of residual impurities and screw dislocation density on processing conditions. The results provide practical insights for fabrication of advanced superconducting devices including qubit arrays, and guide future work on crystallographically deterministic qubit fabrication.

cond-mat.supr-con↗

arXiv2015

Prognostic factors associated with success rates of posterior orthodontic miniscrew implant

Three electronic searches were conducted to obtain articles in English limited to clinical human studies published prior to March 2015. The outcome measure was the success of MIs. Patient factors included age, gender, and jaw; the MI factors included length and diameter. A metaanalysis was then performed based on 17 individual studies. The quality of each study was assessed for nonrandomized studies and quantified using the NewcastleOttawa Scale. The outcome of the metaanalysis was a combined OR. Subgroup and sensitivity analyses based on the study design, study quality, and sample size of MI were performed.

stat.AP↗