arXiv subjects

Evan J. Telford

Publications and source records attributed to Evan J. Telford.

15 recordsLinked to original sources

arXiv2025

Charge Density Wave and Ferromagnetism in Intercalated CrSBr

In materials with one-dimensional electronic bands, electron-electron interactions can produce intriguing quantum phenomena, including spin-charge separation and charge density waves (CDW). Most of these systems, however, are non-magnetic, motivating a search for anisotropic materials where the coupling of charge and spin may affect emergent quantum states. Here, chemical intercalation of the van der Waals magnetic semiconductor CrSBr yields $Li_{0.17(2)} (tetrahydrofuran)_{0.26(3)} CrSBr$, which possess an electronically driven quasi-1D CDW with an onset temperature above room temperature. Concurrently, electron doping increases the magnetic ordering temperature from 132 K to 200 K and switches its interlayer magnetic coupling from antiferromagnetic to ferromagnetic. The spin-polarized nature of the anisotropic bands that give rise to this CDW enforces an intrinsic coupling of charge and spin. The coexistence and interplay of ferromagnetism and charge modulation in this exfoliatable material provides a promising platform for studying tunable quantum phenomena across a range of temperatures and thicknesses.

cond-mat.mtrl-sci↗

arXiv2024

Uniaxial plasmon polaritons $\textit{via}$ charge transfer at the graphene/CrSBr interface

Graphene is a privileged 2D platform for hosting confined light-matter excitations known as surface plasmon-polaritons (SPPs), as it possesses low intrinsic losses with a high degree of optical confinement. However, the inherently isotropic optical properties of graphene limit its ability to guide and focus SPPs, making it less suitable than anisotropic elliptical and hyperbolic materials as a platform for polaritonic lensing and canalization. Here, we present the graphene/CrSBr heterostructure as an engineered 2D interface that hosts highly anisotropic SPP propagation over a wide range of frequencies in the mid-infrared and terahertz. Using a combination of scanning tunneling microscopy (STM), scattering-type scanning near-field optical microscopy (s-SNOM), and first-principles calculations, we demonstrate mutual doping in excess of 10$^{13}$ cm$^{-2}$ holes/electrons between the interfacial layers of graphene/CrSBr heterostructures. SPPs in graphene activated by charge transfer interact with charge-induced anisotropic intra- and interband transitions in the interfacial doped CrSBr, leading to preferential SPP propagation along the quasi-1D chains that compose each CrSBr layer. This multifaceted proximity effect both creates SPPs and endows them with anisotropic transport and propagation lengths that differ by an order-of-magnitude between the two in-plane crystallographic axes of CrSBr.

cond-mat.mes-hall↗

arXiv2023

Nanoscale magnetism and magnetic phase transitions in atomically thin CrSBr

Since their first observation in 2017, atomically thin van der Waals (vdW) magnets have attracted significant fundamental, and application-driven attention. However, their low ordering temperatures, $T_c$, sensitivity to atmospheric conditions and difficulties in preparing clean large-area samples still present major limitations to further progress. The remarkably stable high-$T_c$ vdW magnet CrSBr has the potential to overcome these key shortcomings, but its nanoscale properties and rich magnetic phase diagram remain poorly understood. Here we use single spin magnetometry to quantitatively characterise saturation magnetization, magnetic anisotropy constants, and magnetic phase transitions in few-layer CrSBr by direct magnetic imaging. We show pristine magnetic phases, devoid of defects on micron length-scales, and demonstrate remarkable air-stability down the monolayer limit. We address the spin-flip transition in bilayer CrSBr by direct imaging of the emerging antiferromagnetic (AFM) to ferromagnetic (FM) phase wall and elucidate the magnetic properties of CrSBr around its ordering temperature. Our work will enable the engineering of exotic electronic and magnetic phases in CrSBr and the realisation of novel nanomagnetic devices based on this highly promising vdW magnet.

cond-mat.mes-hall↗

arXiv2023

Electrostatically controlled spin polarization in Graphene-CrSBr magnetic proximity heterostructures

The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as an active component in spintronics devices. The electrostatic control of this spin polarization in graphene has however never been demonstrated so far. We show that interfacing graphene with the van der Waals antiferromagnet CrSBr results in an unconventional manifestation of the quantum Hall effect, which can be attributed to the presence of counterflowing spin-polarized edge channels originating from the spin-dependent exchange shift in graphene. We extract an exchange shift ranging from 27 to 32 meV, and show that it also produces an electrostatically tunable spin polarization of the electron/hole carriers in graphene ranging from -50 % to +69 % in the absence of a magnetic field. This proof of principle provides a starting point for the use of graphene as an electrostatically tunable source of spin current and could allow this system to generate a large magnetoresistance in gate tunable spin valve devices.

cond-mat.mes-hall↗

arXiv2023

Interplay between local moment and itinerant magnetism in the layered metallic antiferromagnet TaFe$_{1.14}$Te$_3$

Two-dimensional (2D) antiferromagnets have garnered considerable interest for the next generation of functional spintronics. However, many available bulk materials from which 2D antiferromagnets are isolated are limited by their sensitivity to air, low ordering temperatures, and insulating transport properties. TaFe$_{1+y}$Te$_3$ offers unique opportunities to address these challenges with increased air stability, metallic transport properties, and robust antiferromagnetic order. Here, we synthesize TaFe$_{1+y}$Te$_3$ ($y$ = 0.14), identify its structural, magnetic, and electronic properties, and elucidate the relationships between them. Axial-dependent high-field magnetization measurements on TaFe$_{1.14}$Te$_3$ reveal saturation magnetic fields ranging between 27-30 T with a saturation magnetic moment of 2.05-2.12 $μ_B$. Magnetotransport measurements confirm TaFe$_{1.14}$Te$_3$ is metallic with strong coupling between magnetic order and electronic transport. Angle-resolved photoemission spectroscopy measurements across the magnetic transition uncover a complex interplay between itinerant electrons and local magnetic moments that drives the magnetic transition. We further demonstrate the ability to isolate few-layer sheets of TaFe$_{1.14}$Te$_3$ through mechanical exfoliation, establishing TaFe$_{1.14}$Te$_3$ as a potential platform for 2D spintronics based on metallic layered antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2022

Designing magnetic properties in CrSBr through hydrostatic pressure and ligand substitution

The ability to control magnetic properties of materials is crucial for fundamental research and underpins many information technologies. In this context, two-dimensional materials are a particularly exciting platform due to their high degree of tunability and ease of implementation into nanoscale devices. Here we report two approaches for manipulating the A-type antiferromagnetic properties of the layered semiconductor CrSBr through hydrostatic pressure and ligand substitution. Hydrostatic pressure compresses the unit cell, increasing the interlayer exchange energy while lowering the Néel temperature. Ligand substitution, realized synthetically through Cl alloying, anisotropically compresses the unit cell and suppresses the Cr-halogen covalency, reducing the magnetocrystalline anisotropy energy and decreasing the Néel temperature. A detailed structural analysis combined with first-principles calculations reveal that alterations in the magnetic properties are intricately related to changes in direct Cr-Cr exchange interactions and the Cr-anion superexchange pathways. Further, we demonstrate that Cl alloying enables chemical tuning of the interlayer coupling from antiferromagnetic to ferromagnetic, which is unique amongst known two-dimensional magnets. The magnetic tunability, combined with a high ordering temperature, chemical stability, and functional semiconducting properties, make CrSBr an ideal candidate for pre- and post-synthetic design of magnetism in two-dimensional materials.

cond-mat.mtrl-sci↗

arXiv2022

Tunneling Spectroscopy of Two-Dimensional Materials Based on Via Contacts

We introduce a novel planar tunneling architecture for van der Waals heterostructures based on via contacts, namely metallic contacts embedded into through-holes in hexagonal boron nitride ($h$BN). We use the via-based tunneling method to study the single-particle density of states of two different two-dimensional (2D) materials, NbSe$_2$ and graphene. In NbSe$_2$ devices, we characterize the barrier strength and interface disorder for barrier thicknesses of 0, 1 and 2 layers of $h$BN and study the dependence on tunnel-contact area down to $(44 \pm 14)^2 $ nm$^2$. For 0-layer $h$BN devices, we demonstrate a crossover from diffusive to point contacts in the small-contact-area limit. In graphene, we show that reducing the tunnel barrier thickness and area can suppress effects due to phonon-assisted tunneling and defects in the $h$BN barrier. This via-based architecture overcomes limitations of other planar tunneling designs and produces high-quality, ultra-clean tunneling structures from a variety of 2D materials.

cond-mat.mes-hall↗

arXiv2021

Visualizing Atomically-Layered Magnetism in CrSBr

Two-dimensional (2D) materials can host stable, long-range magnetic phases in the presence of underlying magnetic anisotropy. The ability to realize the full potential of 2D magnets necessitates systematic investigation of the role of individual atomic layers and nanoscale inhomogeneity ($\textit{i.e.}$, strain) on the emergence and stability of both intra- and interlayer magnetic phases. Here, we report multifaceted spatial-dependent magnetism in few-layer CrSBr using magnetic force microscopy (MFM) and Monte Carlo-based magnetic simulations. We perform nanoscale visualization of the magnetic sheet susceptibility from raw MFM data and force-distance curves, revealing a characteristic onset of both intra- and interlayer magnetic correlations as a function of temperature and layer-thickness. We demonstrate that the presence of a single uncompensated layer in odd-layer terraces significantly reduces the stability of the low-temperature antiferromagnetic (AFM) phase and gives rise to multiple coexisting magnetic ground states at temperatures close to the bulk Néel temperature ($\textit{T}$$_N$). Furthermore, the AFM phase can be reliably suppressed using modest fields (~300 Oe) from the MFM probe, behaving as a nanoscale magnetic switch. Our prototypical study of few-layer CrSBr demonstrates the critical role of layer parity on field-tunable 2D magnetism and provides vital design criteria for future nanoscale magnetic devices. Moreover, we provide a roadmap for using MFM for nano-magnetometry of 2D materials, despite the ubiquitous absence of bulk zero-field magnetism in magnetized sheets.

cond-mat.mtrl-sci↗

arXiv2021

Andreev Reflections in NbN/graphene Junctions under Large Magnetic Fields

Hybrid superconductor/graphene (SC/g) junctions are excellent candidates for investigating correlations between Cooper pairs and quantum Hall (QH) edge modes. Experimental studies are challenging as Andreev reflections are extremely sensitive to junction disorder and high magnetic fields are required to form QH edge states. We fabricated low-resistance SC/g interfaces, composed of graphene edge contacted with NbN with a barrier strength of $Z\approx 0.4$, that remain superconducting under magnetic fields larger than $18$ T. We establish the role of graphene's Dirac band structure on zero-field Andreev reflections and demonstrate dynamic tunability of the Andreev reflection spectrum by moving the boundary between specular and retro Andreev reflections with parallel magnetic fields. Through the application of perpendicular magnetic fields, we observe an oscillatory suppression of the 2-probe conductance in the $ν= 4$ Landau level attributed to the reduced efficiency of Andreev processes at the NbN/g interface, consistent with theoretical predictions.

cond-mat.mes-hall↗

arXiv2021

Hidden low-temperature magnetic order revealed through magnetotransport in monolayer CrSBr

Magnetic semiconductors are a powerful platform for understanding, utilizing and tuning the interplay between magnetic order and electronic transport. Compared to bulk crystals, two-dimensional magnetic semiconductors have greater tunability, as illustrated by the gate modulation of magnetism in exfoliated CrI$_3$ and Cr$_2$Ge$_2$Te$_6$, but their electrically insulating properties limit their utility in devices. Here we report the simultaneous electrostatic and magnetic control of electronic transport in atomically-thin CrSBr, an A-type antiferromagnetic semiconductor. Through magnetotransport measurements, we find that spin-flip scattering from the interlayer antiferromagnetic configuration of multilayer flakes results in giant negative magnetoresistance. Conversely, magnetoresistance of the ferromagnetic monolayer CrSBr vanishes below the Curie temperature. A second transition ascribed to the ferromagnetic ordering of magnetic defects manifests in a large positive magnetoresistance in the monolayer and a sudden increase of the bulk magnetic susceptibility. We demonstrate this magnetoresistance is tunable with an electrostatic gate, revealing that the ferromagnetic coupling of defects is carrier mediated.

cond-mat.mes-hall↗

arXiv2021

Interlayer Electronic Coupling on Demand in a 2D Magnetic Semiconductor

When monolayers of two-dimensional (2D) materials are stacked into van der Waals structures, interlayer electronic coupling can introduce entirely new properties, as exemplified by recent discoveries of moiré bands that host highly correlated electronic states and quantum dot-like interlayer exciton lattices. Here we show the magnetic control of interlayer electronic coupling, as manifested in tunable excitonic transitions, in an A-type antiferromagnetic 2D semiconductor CrSBr. Excitonic transitions in bilayer and above can be drastically changed when the magnetic order is switched from layered antiferromagnetic to the field-induced ferromagnetic state, an effect attributed to the spin-allowed interlayer hybridization of electron and hole orbitals in the latter, as revealed by GW-BSE calculations. Our work uncovers a magnetic approach to engineer electronic and excitonic effects in layered magnetic semiconductors.

cond-mat.mes-hall↗

arXiv2020

Magnetic Order and Symmetry in the 2D Semiconductor CrSBr

The recent discovery of two-dimensional (2D) magnets offers unique opportunities for the experimental exploration of low-dimensional magnetism4 and the magnetic proximity effects, and for the development of novel magnetoelectric, magnetooptic and spintronic devices. These advancements call for 2D materials with diverse magnetic structures as well as effective probes for their magnetic symmetries, which is key to understanding intralayer magnetic order and interlayer magnetic coupling. Here we apply second harmonic generation (SHG), a technique acutely sensitive to symmetry breaking, to probe the magnetic structure of a new 2D magnetic semiconductor, CrSBr. We find that CrSBr monolayers are ferromagnetically ordered below 146 K, an observation enabled by the discovery of a giant magnetic dipole SHG effect in the centrosymmetric 2D structure. In multilayers, the ferromagnetic monolayers are coupled antiferromagnetically, with the Néel temperature notably increasing with decreasing layer number. The magnetic structure of CrSBr, comprising spins co-aligned in-plane with rectangular unit cell, differs markedly from the prototypical 2D hexagonal magnets CrI3 and Cr2Ge2Te6 with out-of-plane moments. Moreover, our SHG analysis suggests that the order parameters of the ferromagnetic monolayer and the antiferromagnetic bilayer are the magnetic dipole and the magnetic toroidal moments, respectively. These findings establish CrSBr as an exciting 2D magnetic semiconductor and SHG as a powerful tool to probe 2D magnetic symmetry, opening the door to the exploration of coupling between magnetic order and excitonic/electronic properties, as well as the magnetic toroidal moment, in a broad range of applications.

cond-mat.mtrl-sci↗

arXiv2020

Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

The recent discovery of magnetism within the family of exfoliatable van der Waals (vdW) compounds has attracted considerable interest in these materials for both fundamental research and technological applications. However current vdW magnets are limited by their extreme sensitivity to air, low ordering temperatures, and poor charge transport properties. Here we report the magnetic and electronic properties of CrSBr, an air-stable vdW antiferromagnetic semiconductor that readily cleaves perpendicular to the stacking axis. Below its Néel temperature, $T_N = 132 \pm 1$ K, CrSBr adopts an A-type antiferromagnetic structure with each individual layer ferromagnetically ordered internally and the layers coupled antiferromagnetically along the stacking direction. Scanning tunneling spectroscopy and photoluminescence (PL) reveal that the electronic gap is $Δ_E = 1.5 \pm 0.2$ eV with a corresponding PL peak centered at $1.25 \pm 0.07$ eV. Using magnetotransport measurements, we demonstrate strong coupling between magnetic order and transport properties in CrSBr, leading to a large negative magnetoresistance response that is unique amongst vdW materials. These findings establish CrSBr as a promising material platform for increasing the applicability of vdW magnets to the field of spin-based electronics.

cond-mat.mtrl-sci↗

arXiv2019

Doping-induced superconductivity in the van der Waals superatomic crystal Re$_6$Se$_8$Cl$_2$

Superatomic crystals are composed of discrete modular clusters that emulate the role of atoms in traditional atomic solids$^{1-4}$. Owing to their unique hierarchical structures, these materials are promising candidates to host exotic phenomena, such as superconductivity and magnetism that can be revealed through doping$^{5-10}$. Low-dimensional superatomic crystals hold great promise as electronic components$^{11,12}$, enabling these properties to be applied to nanocircuits, but the impact of doping in such compounds remains unexplored. Here we report the electrical transport properties of Re$_6$Se$_8$Cl$_2$, a two-dimensional superatomic semiconductor$^{13,14}$. Using an in situ current annealing technique, we find that this compound can be n-doped through Cl dissociation, drastically altering the transport behaviour from semiconducting to metallic and giving rise to superconductivity below $\sim$ 9 K. This work is the first example of superconductivity in a van der Waals (vdW) superatomic crystal; more broadly, it establishes a new chemical strategy to manipulate the electronic properties of vdW materials with labile ligands.

cond-mat.mtrl-sci↗

arXiv2018

Via Method for Lithography Free Contact and Preservation of 2D Materials

Atomically thin 2D materials span the common components of electronic circuits as metals, semi-conductors, and insulators, and can manifest correlated phases such as superconductivity, charge density waves, and magnetism. An ongoing challenge in the field is to incorporate these 2D materials into multi-layer hetero-structures with robust electrical contacts while preventing disorder and degradation. In particular, preserving and studying air-sensitive 2D materials has presented a significant challenge since they readily oxidize under atmospheric conditions. We report a new technique for contacting 2D materials, in which metal via contacts are integrated into flakes of insulating hexagonal boron nitride, and then placed onto the desired conducting 2D layer, avoiding direct lithographic patterning onto the 2D conductor. The metal contacts are planar with the bottom surface of the boron nitride and form robust contacts to multiple 2D materials. These structures protect air-sensitive 2D materials for months with no degradation in performance. This via contact technique will provide the capability to produce atomic printed circuit boards that can form the basis of more complex multi-layer heterostructures.

cond-mat.mes-hall↗