arXiv subjects

Evangelos Golias

Publications and source records attributed to Evangelos Golias.

11 recordsLinked to original sources

arXiv2026

Self-selective growth of GaAs1-xBix on GaAs zinc blende/wurtzite nanowire heterostructures

Site-selective nanostructure growth and material incorporation at the atomic scale offer a promising pathway for engineering quantum materials and nanodevices. Here, GaAs nanowires (NWs) with an axial heterostructure of alternating zinc blende (Zb) and wurtzite (Wz) crystal phases are employed as templates for site-selective Ga and Bi overgrowth. Using X-ray photoemission electron microscopy (XPEEM) with nanoscale spatial resolution, we map elemental distribution and local chemical bonding to reveal the incorporation behavior of Bi atoms in {110} Zb and {11-20} Wz facets. Bi incorporation proceeds through an anion-exchange process, where Bi atoms replace As, forming local Ga-Bi bonds and producing a thin GaAs1-xBix shell. We observe crystal-phase-dependent Bi incorporation, with higher Bi concentration in the Zb segments than in the neighboring Wz segments within the same NW. Furthermore, the Zb segment with higher Bi content exhibits reduced susceptibility to oxidation compared with the Wz segment, resulting in increased Ga-oxide in the Wz surfaces. This study highlights GaAs NW Zb/Wz heterostructures as a template for controlled growth of GaBi and GaAs1-xBix nanostructures with tailored functionalities for quantum applications

cond-mat.mtrl-sci↗

arXiv2026

Topological textures and emergent altermagnetic signatures in ultrathin BiFeO3

Magnetoelectric multiferroics, materials with intrinsically coupled electric polarization and magnetic order, promise ultralow-power switching, nonvolatile memory, and energy-efficient signal transduction. Yet practical deployment demands ultrathin films down to the atomic limit, where both orders typically degrade. Maintaining both order parameters at the thinnest scales in complex oxides remains a tremendous challenge, as uncompensated bound charge drives nanoscale depolarization in most ferroelectrics, while off-stoichiometry, reduced anisotropy, and charge transfer can produce magnetic dead layers in ultrathin oxides at substrate interfaces. Here, we realize a multiferroic phase of BiFeO3 that not only sustains both order parameters at room temperature with no dead layer but also exhibits signatures of emergent altermagnetism in the four-unit-cell, ultrathin limit. First-principles calculations, spin symmetry analysis, atomic-resolution imaging, and angle-resolved magnetic imaging reveal that short-circuit electrostatic boundary conditions, together with epitaxial strain, drive a continuous second-order, thickness-driven phase transition that enables the formation of multiferroic topological textures. Moreover, the imposed boundary conditions stabilize a d-wave altermagnetic time-reversal symmetry breaking, with corresponding signatures observed in magnetic circular dichroism. Collectively, these results establish a pathway to stabilize unconventional multiferroicity at device-relevant thicknesses, reframing scaling limits for oxide electronics.

cond-mat.mtrl-sci↗

arXiv2025

Revealing the Altermagnetism in Hematite via XMCD Imaging and Anomalous Hall Electrical Transport

Altermagnets are a class of magnetic materials that exhibit unconventional transport properties, such as an anomalous Hall effect, despite having compensated sublattice magnetic moments. In this study, we report fundamental experimental evidence of the altermagnetic nature of hematite ($α$-\ch{Fe2O3}), combining electrical transport with advanced XPEEM imaging with linear and circular dichroism contrast. Our measurements directly visualize the Néel vector's coupling to the crystal orientation, confirming hematite's altermagnetic order and its symmetry-driven transport behavior. Transport measurements reveal an anisotropic AHE with a pronounced crystal orientation dependence, including a sign inversion for specific Néel vector alignments. Supported by first-principles theoretical calculations, we explain how the interplay between collinear spin and crystal symmetry breaking drives the observed anomalous Hall effect. These findings establish hematite as an altermagnet, paving the way for experimental identification of altermagnetic materials and their integration into spintronic technologies.

cond-mat.mtrl-sci↗

arXiv2025

Identifying Switching of Antiferromagnets by Spin-Orbit Torques

Antiferromagnets are promising candidates for ultrafast spintronic applications, leveraging current-induced spin-orbit torques. However, experimentally distinguishing between different switching mechanisms of the staggered magnetization (Néel vector) driven by current pulses remains a challenge. In an exemplary study of the collinear antiferromagnetic compound Mn$_2$Au, we demonstrate that slower thermomagnetoelastic effects predominantly govern switching over a wide parameter range. In the regime of short current pulses in the nanosecond range, however, we observe fully Néel spin-orbit torque driven switching. We show that this ultrafast mechanism enables the complete directional alignment of the Néel vector by current pulses in device structures.

physics.app-ph↗

arXiv2024

Two-stage growth for highly ordered epitaxial C$_{60}$ films on Au(111)

As an organic semiconductor and a prototypical acceptor molecule in organic photovoltaics, C$_{60}$ has broad relevance to the world of organic thin film electronics. Although highly uniform C$_{60}$ thin films are necessary to conduct spectroscopic analysis of the electronic structure of these C$_{60}$-based materials, reported C$_{60}$ films show a relatively low degree of order beyond a monolayer. Here, we develop a generalizable two-stage growth technique that consistently produces single-domain C$_{60}$ films of controllable thicknesses, using Au(111) as an epitaxially well-matched substrate. We characterize the films using low-energy electron diffraction, low-energy electron microscopy, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES). We report highly oriented epitaxial film growth of C$_{60}$/Au(111) from 1 monolayer (ML) up to 20 ML films. The high-quality of the C$_{60}$ thin films enables the direct observation of the electronic dispersion of the HOMO and HOMO-1 bands via ARPES without need for small spot sizes. Our results indicate a path for the growth of organic films on metallic substrates with long-range ordering.

cond-mat.mtrl-sci↗

arXiv2023

One-dimensional electronic structure of phosphorene chains

Phosphorene, a 2D allotrope of phosphorus, is technologically very appealing because of its semiconducting properties and narrow band gap. Further reduction of the phosphorene dimensionality may spawn exotic properties of its electronic structure, including lateral quantum confinement and topological edge states. Phosphorene atomic chains self-assembled on Ag(111) have recently been characterized structurally but were found by angle-resolved photoemission (ARPES) to be electronically 2D. We show that these chains, although aligned equiprobably to three <$1 \bar{1} 0$> directions of the Ag(111) surface, can be characterized by ARPES because the three rotational variants are separated in the angular domain. The dispersion of the phosphorus band measured along and perpendicular to the chains reveals pronounced electronic confinement resulting in a 1D band, flat and dispersionless perpendicular to the chain direction in momentum space. Our density functional theory calculations reproduce the 1D band for the experimentally determined structure of P/Ag(111). We predict a semiconductor-to-metal phase transition upon increasing the density of the chain array so that a 2D structure would be metallic.

cond-mat.mtrl-sci↗

arXiv2023

Magnetic domain engineering in antiferromagnetic CuMnAs and Mn$_2$Au devices

Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of understanding of antiferromagnetic domain formation and manipulation, which translates to either incomplete or non-scalable control of the magnetic order. Here, we demonstrate simple and functional ways of influencing the domain structure in CuMnAs and Mn2Au, two key materials of antiferromagnetic spintronics research, using device patterning and strain engineering. Comparing x-ray microscopy data from two different materials, we reveal the key parameters dictating domain formation in antiferromagnetic devices and show how the non-trivial interaction of magnetostriction, substrate clamping and edge anisotropy leads to specific equilibrium domain configurations. More specifically, we observe that patterned edges have a significant impact on the magnetic anisotropy and domain structure over long distances, and we propose a theoretical model that relates short-range edge anisotropy and long-range magnetoelastic interactions. The principles invoked are of general applicability to the domain formation and engineering in antiferromagnetic thin films at large, which will pave the way towards realizing truly functional antiferromagnetic devices.

cond-mat.mtrl-sci↗

arXiv2022

Current-driven writing process in antiferromagnetic Mn2Au for memory applications

Current pulse driven Neel vector rotation in metallic antiferromagnets is one of the most promising concepts in antiferromagnetic spintronics. We show microscopically that the Neel vector of epitaxial thin films of the prototypical compound Mn2Au can be reoriented reversibly in the complete area of cross shaped device structures using single current pulses. The resulting domain pattern with aligned staggered magnetization is long term stable enabling memory applications. We achieve this switching with low heating of 20 K, which is promising regarding fast and efficient devices without the need for thermal activation. Current polarity dependent reversible domain wall motion demonstrates a Neel spin-orbit torque acting on the domain walls.

physics.app-ph↗

arXiv2022

Influence of magnetic domain walls on all-optical magnetic toggle switching in a ferrimagnetic GdFe film

We present a microscopic magnetic domain imaging study of single-shot all-optical magnetic toggle switching of a ferrimagnetic Gd$_{26}$Fe$_{74}$ film with out-of-plane easy axis of magnetization by x-ray magnetic circular dichroism photoelectron emission microscopy. Individual linearly polarized laser pulses of 800 nm wavelength and 100 fs duration above a certain threshold fluence reverse the sample magnetization, independent of the magnetization direction, the so-called toggle switching. Local deviations from this deterministic behavior close to magnetic domain walls are studied in detail. Reasons for nondeterministic toggle switching are related to extrinsic effects, caused by pulse-to-pulse variations of the exciting laser system, and to intrinsic effects related to the magnetic domain structure of the sample. The latter are, on the one hand, caused by magnetic domain wall elasticity, which leads to a reduction of the domain-wall length at sharp tipped features. These features appear after the optical switching at positions where the line of constant threshold fluence in the Gaussian footprint of the laser pulse comes close to an already-existing domain wall. On the other hand, we identify the presence of laser-induced domain-wall motion in the toggle-switching event as a further cause for local deviations from purely deterministic toggle switching.

cond-mat.mes-hall↗

arXiv2020

Accelerating the laser-induced demagnetization of a ferromagnetic film by antiferromagnetic order in an adjacent layer

We study the ultrafast demagnetization of Ni/NiMn and Co/NiMn ferromagnetic/antiferromagnetic bilayer systems after excitation by a laser pulse. We probe the ferromagnetic order of Ni and Co using magnetic circular dichroism in time-resolved pump--probe resonant X-ray reflectivity. Tuning the sample temperature across the antiferromagnetic ordering temperature of the NiMn layer allows to investigate effects induced by the magnetic order of the latter. The presence of antiferromagnetic order in NiMn speeds up the demagnetization of the ferromagnetic layer, which is attributed to bidirectional laser-induced superdiffusive spin currents between the ferromagnetic and the antiferromagnetic layer.

cond-mat.mes-hall↗

arXiv2018

Mapping the band structure of GeSbTe phase change alloys around the Fermi level

Phase change alloys are used for non-volatile random access memories exploiting the conductivity contrast between amorphous and metastable, crystalline phase. However, this contrast has never been directly related to the electronic band structure. Here, we employ photoelectron spectroscopy to map the relevant bands for metastable, epitaxial GeSbTe films. The constant energy surfaces of the valence band close to the Fermi level are hexagonal tubes with little dispersion perpendicular to the (111) surface. The electron density responsible for transport belongs to the tails of this bulk valence band, which is broadened by disorder, i.e., the Fermi level is 100 meV above the valence band maximum. This result is consistent with transport data of such films in terms of charge carrier density and scattering time. In addition, we find a state in the bulk band gap with linear dispersion, which might be of topological origin.

cond-mat.mtrl-sci↗