arXiv subjects

Evgeny Y. Tsymbal

Publications and source records attributed to Evgeny Y. Tsymbal.

At least 19 recordsLinked to original sources

arXiv2026

Conditions for Altermagnetism in RuO2

The magnetic ground state of rutile RuO2 remains disputed, raising a central question: under what structural and chemical conditions can this material support altermagnetism? We address this question by combining a critical assessment of experimental and theoretical studies with first-principles calculations of epitaxial strain, point defects, doping, and interfaces. Bulk-sensitive measurements reported in the literature are consistent with a nonmagnetic ground state, while magnetic signatures in thin films depend strongly on their structural environment and do not necessarily establish homogeneous altermagnetic order. Our calculations identify substrate-imposed epitaxial strain as the leading factor favoring altermagnetism among the conditions examined and predict several substrate-orientation combinations that stabilize an altermagnetic ground state. Carrier doping and chemical substitution modify this strain-induced magnetism in distinct ways. Uniform hole doping strengthens the magnetic tendency, whereas Ru vacancies provide little benefit and can weaken the magnetic state through local structural distortions. Cr or Mn substitution, by contrast, enhances Ru magnetic moments and further stabilizes the strained altermagnetic phase. These results distinguish the effects of carrier doping from those of local structural and chemical changes and identify concrete routes to realizing altermagnetism in RuO2 films.

cond-mat.mtrl-sci↗

arXiv2026

Octupole-driven spin torque switching of antiferromagnetic tunnel junctions

Magnetic tunnel junctions (MTJs) based on ferromagnets are canonical devices in spintronics, with wide-ranging applications in data storage, computing, and sensing. They simultaneously exhibit mechanisms for electrical detection and control of magnetic order through the tunneling magnetoresistance (TMR) and spin-transfer torque (STT) effects, respectively. It was long assumed that neither of these effects could be sizeable in all-antiferromagnetic tunnel junctions (AATJs), since they exhibit no net magnetization. Recently, however, it was shown that AATJs based on chiral antiferromagnets do exhibit TMR due to their non-relativistic momentum-dependent spin polarization and cluster magnetic octupole moment (CMO), which are manifestations of their spin-split band structure. However, the reciprocal effect, i.e., the antiferromagnetic counterpart of STT, has been assumed non-existent due to the total electric current being spin-neutral. Here, we report nanoscale AATJs exhibiting this reciprocal effect, which we term octupole-driven spin-transfer torque (OTT). We demonstrate current-induced OTT switching of PtMn3|MgO|PtMn3 AATJs, exhibiting a TMR value of 363% at room temperature and switching current densities of the order of 10 MA/cm2. Our theoretical modeling explains the origin of OTT in terms of the imbalance between intra- and inter-sublattice spin currents across the AATJ, and equivalently, in terms of the non-zero net cluster octupole polarization of each PtMn3 layer. This work establishes a new materials platform for antiferromagnetic spintronics and provides a pathway towards deeply scaled magnetic memory and room-temperature terahertz technologies.

cond-mat.mtrl-sci↗

arXiv2026

Purely Electric-Field Control of Topological Magnetism in Two-Dimensional Magnets

Electrical control of topological magnetism is central to realizing energy-efficient topological spintronics. Yet most electric-field approaches modify the competing magnetic interactions through a nonselective rearrangement of low-energy electronic states, yielding coarse magnetic phase control that often requires external magnetic fields to stabilize topological quasiparticles, while few schemes solely based on electric fields are restricted to specific conducting materials. Here, we establish a general approach for purely electric-field control of topological magnetism, in which an applied electric field electrostatically dopes a selected orbital-angular-momentum-polarized band edge of a two-dimensional (2D) van der Waals (vdW) magnetic semiconductor via proximity to an adjacent nonmagnetic vdW metal. We show that the resulting electrostatic doping predominantly tunes magnetic anisotropy of the 2D magnet, while leaving exchange interaction and Dzyaloshinskii-Moriya interaction nearly unchanged, thereby reversibly driving the system through ferromagnetic, skyrmion, spiral, and bimeron phases. We demonstrate this mechanism for CrBr3/graphene and Cr2Ge2Te6/TaS2 vdW heterostructures hosting electron and hole pockets of different orbital characters. These results establish a broadly applicable strategy for purely electric-field control in topological spintronics.

cond-mat.mes-hall↗

arXiv2026

Effects of Band Symmetry on Spin-Dependent Transport in Noncollinear Antiferromagnetic Tunnel Junctions

Antiferromagnetic tunnel junctions (AFMTJs) can exhibit large tunneling magnetoresistance (TMR), making them promising candidates for ultrafast and field-robust spintronic devices. Here, we elucidate the role of band symmetry in governing spin-dependent transport in AFMTJs. Using first-principles density-functional theory combined with quantum-transport calculations, we investigate Mn3NiN/LaAlO3/Mn3NiN (001) junctions based on the noncollinear $Γ_{4g}$ antiferromagnetic phase of Mn3NiN. Although Mn3NiN exhibits a large momentum-dependent spin polarization due to broken $PT$ symmetry, we show that the tunneling conductance is critically controlled by band symmetry of the electrode Bloch states and their symmetry-selective coupling to evanescent states in the LaAlO3 barrier. Orbital-symmetry selection rules suppress interband transmission in the parallel configuration, whereas the antiparallel configuration enables symmetry-compatible interband tunneling along the diagonal directions of the two-dimensional Brillouin zone. These additional transmission channels enhance the antiparallel conductance and reduce the TMR relative to predictions based solely on spin polarization. Nevertheless, the TMR remains exceptionally large, exceeding 2000%, while band symmetry controls the attainable magnitude of TMR in AFMTJs. Our results establish band-symmetry filtering as an essential ingredient of spin-dependent tunneling in AFMTJs.

cond-mat.mtrl-sci↗

arXiv2026

Termination-Preserved Ultra-high Tunneling Magnetoresistance in Altermagnetic KV2Se2O

Altermagnets exhibit nonrelativistic spin splitting without net magnetization, establishing a new platform for next-generation spintronic devices. Although altermagnetic tunnel junctions (AMTJs) represent the most promising realizations, their practical applications are hindered by low tunnel magnetoresistance (TMR) ratios and strong sensitivity to interfacial configurations. Here, we systematically explore the transport properties and microscopic mechanisms of AMTJs based on the recently discovered d-wave altermagnet KV2Se2O. Using first-principles calculations and orbital-resolved analysis, we demonstrate that the synergy between compressed nodal-point like spin-degenerate channels and coplanar interfacial magnetic order yields an ultra-high intrinsic TMR above 105% for all interfacial terminations. More importantly, K-termination effectively preserves bulk spin polarization through its unique passivation characteristics, leading to an ultra-high TMR up to 1012%. These results identify the coupling between momentum-space topology and interfacial passivation provides a reliable strategy for realizing giant magnetoresistive responses in altermagnetic spintronic devices.

cond-mat.mtrl-sci↗

arXiv2026

Spin Dynamics in the van der Waals Ferromagnet CrTe2 Engineered by Niobium Doping

Understanding and controlling spin dynamics in two-dimensional (2D) van der Waals (vdW) ferromagnets is essential for their application in magnonics and hybrid quantum platforms. Here, we investigate the spin dynamics of the vdW ferromagnet 1T-CrTe_{2} and demonstrate their systematic tunability via niobium (Nb) substitution in Cr_{1-x}Nb_{x}Te_{2}(x=0-0.2). Ferromagnetic resonance (FMR) spectroscopy reveals that Nb doping enables wide-band tuning of the resonance frequency from 40 GHz down to the few-GHz regime, accompanied by a moderate increase in the Gilbert damping constant from ~0.066 to ~0.14, while preserving robust room-temperature ferromagnetism. Complementary magnetometry shows a concurrent reduction of the Curie temperature and saturation magnetization with increasing Nb content. Density functional theory calculations attribute the observed spin-dynamic trends to Nb-induced modifications of magnetic anisotropy and magnetic exchange interactions. Furthermore, CrTe_{2} flakes (~80 nm thick) exhibit lower resonance frequencies and damping than bulk crystals, consistent with thickness, surface/interface, and shape-dependent magnetic anisotropy. These results establish Nb-doped CrTe_{2} as a tunable vdW ferromagnet with controllable spin dynamics, extending its functionality from spintronics to broadband magnonics and quantum magnonics.

cond-mat.mtrl-sci↗

arXiv2026

Exchange Frustration and Topological Magnetism in Electrostatically Doped SrRuO3

Magnetism in transition-metal systems emerges from exchange interactions that depend sensitively on carrier density. Yet leveraging this sensitivity to deliberately engineer exchange frustration and associated topological spin textures remains largely unexplored. Here, combining first-principles calculations with atomistic Monte Carlo simulations, we demonstrate that ferroelectric polarization enables electrostatic control of exchange frustration in the itinerant ferromagnet SrRuO3. We show that electrostatic hole doping renormalizes competing exchange interactions, driving SrRuO3 away from its bulk ferromagnetic ground state toward frustrated regimes, whereas electron doping largely preserves ferromagnetism. At BaTiO3/SrRuO3 interfaces, polarization-induced charge depletion modulates layer dependent exchange couplings, enhancing competition among J1, J2 and J3. The resulting exchange frustration stabilizes a sequence of magnetic phases as a function of thickness and applied magnetic field, including stripe and spiral states, topological meron and bimeron textures, and diverse skyrmionic objects. A minimal spin model identifies exchange frustration as the primary control parameter governing these crossovers, with magnetic anisotropy, Dzyaloshinskii-Moriya interaction, and external field selecting the emergent topology. Our results establish electrostatic doping as a route to engineer frustrated and topological magnetism in itinerant oxide metals.

cond-mat.mtrl-sci↗

arXiv2026

Magnetoelastic Transport-Path Reconstruction and Giant Magnetotransport Responses in a Two-Dimensional Antiferromagnet

Nonvolatile magnetotransport responses in a single magnetic material have generally not been expected to exhibit a large ON/OFF ratio, because they are usually tied to spin-orbit coupling and therefore remain relatively weak. Here we show, contrary to this expectation, that giant nonvolatile magnetotransport can arise in a single magnetic material through magnetoelastic reconstruction of nonrelativistic real-space transport paths. Using the two-dimensional antiferromagnet FePS$_{3}$ as a representative system, first-principles quantum transport calculations reveal that charge transport is strongly tied to its quasi-one-dimensional zigzag sublattice chains and, under suitable doping, can even become confined to them. Moreover, strain lifts the degeneracy among symmetry-related zigzag variants and thus reorients these transport paths through magnetoelastic coupling. As a result, both the longitudinal and transverse conductivities change dramatically, yielding a giant magnetoelastic magnetoresistance of up to $10^{4}$% and an energy-independent Hall ratio that far exceeds the spontaneous Hall ratios found in conventional magnets. These results establish a route to exploiting symmetry-related magnetic variants and their associated transport paths for reconfigurable, high-performance spintronic devices with large nonvolatile readout contrast.

cond-mat.mtrl-sci↗

arXiv2026

Moire Topological Magnetism Twist-Engineered from 2D Spin Spirals

Topological magnetism, characterized by topologically protected spin textures, offers rich physics and transformative prospects for spintronics. However, its stabilization typically demands external magnetic fields, preventing straightforward implementation. Here, we report a universal field-free approach for engineering 2D topologically-trivial spin spirals into topological magnetisms. This approach leverages twisted antiferromagnetic bilayers, where locked spin spirals in the two sublayers form spatially alternating ferromagnetic and antiferromagnetic domains upon twisting. These domains frustrate the uniform antiferromagnetic interlayer exchange, spontaneously stabilizing moire topological magnetisms without external fields. Using first-principles and atomistic spin-model simulations, we validate this approach using bilayers NiCl2 and NiBr2, as representative examples. For twisted NiCl2, we predict topological spin states tunable by the twist angle, including isolated and high-order antiferromagnetic bimerons. For twisted NiBr2, strong frustration yields trivial triple-q spin spirals, which transform into moire topological magnetism with the application of vertical compressive strain. Our findings demonstrate that topologically non-trivial spin textures can be engineered from their trivial counterparts, thus providing a new paradigm for topological spintronics

cond-mat.mtrl-sci↗

arXiv2025

Competing Antiferromagnetic Phases in Multiferroic Wurtzite Transition-Metal Chalcogenides

Antiferromagnetic (AFM) spintronics offers a pathway toward electrically controllable spin-based devices beyond ferromagnets. Here, we identify wurtzite MnX (X = S, Se, Te) as a family of multiferroic materials hosting competing AFM phases, including altermagnetic, where nonrelativistic spin splitting can be controlled by ferroelectric polarization. Using density-functional theory and atomistic spin-model calculations, we show that all pristine MnX compounds stabilize a stripe type collinear AFM ground state, contrary to earlier predictions of an altermagnetic ground state, with the magnetic order governed by frustrated Heisenberg and biquadratic exchange interactions. We further demonstrate that Cr doping drives a transition to an A-type AFM phase that breaks Kramers spin degeneracy and realizes a g-wave altermagnetic state with large nonrelativistic spin splitting near the Fermi level. Importantly, this spin splitting can be deterministically reversed by polarization switching, enabling electric-field control of altermagnetic electronic structure without reorienting the Neel vector or relying on spin-orbit coupling. The close energetic proximity of the stripe AFM to a noncollinear all-in-all-out configuration indicates that wurtzite MnX lies near a topological magnetic phase with finite scalar spin chirality, which may be stabilized by modest perturbations such as temperature, strain or chemical tuning. The distinct magnetic phases exhibit symmetry selective linear and non-linear Hall responses, providing direct transport signatures of altermagnetism and polarization control. Together, these results establish doped wurtzite MnX as a promising platform for altermagnet-ferroelectric multiferroics and electrically AFM spintronics.

cond-mat.mtrl-sci↗

arXiv2025

Direct imaging and control of Berry curvature in noncollinear antiferromagnetic single-crystal thin films

The discovery of the intrinsic anomalous Hall effect (AHE) in noncollinear antiferromagnets where transverse Hall voltage emerges without magnetic field, has opened a plethora of promising opportunities in antiferromagnetic devices. The key challenges limiting their full potential are (1) high-quality epitaxial thin-film growth and (2) the understanding of Berry curvature domain physics. Here, we focus on a noncollinear antiperovskite antiferromagnet Mn3NiN as a model system, successfully grown as a single-crystal epitaxial thin film. Combining multiple experiments supported by theoretical calculations, we probe the Berry curvature associated with antiferromagnetic Γ4g domains in Mn3NiN and its strong connection to an AHE. We directly image the intrinsic Berry curvature with high-resolution Sagnac microscopy, controlling spatial distribution and dynamics by varying temperature and applied magnetic fields. We discover that the Γ4g domains are switchable near the Néel transition, but become frozen and unresponsive to external stimuli at low temperature. This behavior enables the tuning of Berry-curvature driven AHE and magneto-optic Kerr effect responses through controlled experimental conditions. Our findings provide critical advancement of the fundamental understanding and wide tunability of Berry curvature in noncollinear antiferromagnets important for realization in potential spintronic applications.

cond-mat.mtrl-sci↗

arXiv2025

Turn-on of Current-Induced Spin Torque upon Noncollinear Antiferromagnetic Ordering in Delafossite PdCrO2

We report measurements of the current-induced spin torque produced by the delafossite antiferromagnet PdCrO2 and acting on an adjacent ferromagnetic permalloy layer. The spin torque increases strongly as the temperature is reduced through the Neel temperature, when the PdCrO2 transitions from a paramagnetic phase to a noncollinear antiferromagnetic state. This result is qualitatively consistent with density functional theory calculations regarding how spin-current generation changes upon antiferromagnetic ordering in PdCrO2.

cond-mat.mtrl-sci↗

arXiv2025

Longitudinal transport spin polarization of spin degenerate antiferromagnets

A vital goal in spintronics is the efficient electrical generation of spin currents, a pursuit that has recently focused on using antiferromagnets (AFMs) as spin current sources. It has been demonstrated that antiferromagnets with broken PT symmetry (parity + time reversal) can efficiently generate longitudinal and transverse spin currents. At the same time, it has been generally thought that antiferromagnets with PT symmetry (PT-AFMs) forbid the longitudinal spin polarization due to their spin-degenerate band structure. Here, in contrast to this common expectation, we show, using theoretical analysis based on magnetic point group symmetry, that most PT-AFMs can generate longitudinal spin currents due to spin-orbit coupling. Using density-functional theory, we calculate the longitudinal spin conductivity of representative PT-AFMs, L10-MnPt and Mn2Au, and show that its magnitude is comparable to that of their PT-broken counterparts. Our symmetry-enabled classification of antiferromagnets and theoretical results for the longitudinal spin conductivity in representative PT-AFMs expands our understanding of spin transport and shows the possibility of robust spin-current generation in a broad range of spin-degenerate antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2025

Antiferroelectric Hafnia Down to the 2D Limit

Antiferroelectricity is a material property characterized by alternating electric dipoles spontaneously ordered in antiparallel directions. Antiferroelectrics are promising for energy storage, solid-state cooling, and memory technologies; however, these materials are scarce, and their scalability remains largely unexplored. In this work, we demonstrate that single-crystalline hafnia, a lead-free CMOS-compatible material, exhibits antiferroelectricity under compressive-strain conditions. We observe antiparallel sublattice polarization and stable double-hysteresis in single-crystalline (111)-oriented epitaxial La-doped hafnia films grown on yttrium-stabilized zirconia and show that the antipolar orthorhombic phase of hafnia adheres to the Kittel model of antiferroelectricity. Notably, compressive strain strengthens the antiferroelectric order in thinner La-doped hafnia films, achieving an unprecedented 850 C ordering temperature in the two-dimensional limit, highlighting hafnia's potential for advanced antiferroelectric devices.

cond-mat.mtrl-sci↗

arXiv2025

Interface-controlled antiferromagnetic tunnel junctions

Magnetic tunnel junctions (MTJs) are the key building blocks of high-performance spintronic devices. While conventional MTJs rely on ferromagnetic (FM) materials, employing antiferromagnetic (AFM) compounds can significantly increase operation speed and packing density. Current prototypes of AFM tunnel junctions (AFMTJs) exploit antiferromagnets either as spin-filter insulating barriers or as metal electrodes supporting bulk spin-dependent currents. Here, we highlight a largely overlooked AFMTJ prototype, where bulk-spin-degenerate electrodes with an A-type AFM stacking form magnetically uncompensated interfaces, enabling spin-polarized tunneling currents and a sizable tunneling magnetoresistance (TMR) effect. Using first-principles quantum-transport calculations and the van der Waals (vdW) metal Fe$_{4}$GeTe$_{2}$ as a representative A-type AFM electrode, we demonstrate a large negative TMR arising solely from the alignment of interfacial magnetic moments. This prototype of AFMTJs can also be realized with various non-vdW A-type AFM metals that support roughness-insensitive surface magnetization. Beyond TMR, AFMTJs based on A-type antiferromagnets allow convenient switching of the Néel vector, opening a new paradigm for AFM spintronics that leverages spin-dependent properties at AFM interfaces.

cond-mat.mtrl-sci↗

arXiv2025

X-type stacking in cross-chain antiferromagnets

Physical phenomena in condensed matter normally arise from the collective effect of all atoms, while selectively addressing a lone atomic sublattice by external stimulus is elusive. The later functionality may, however, benefit various applications, as the response may differ when the external stimulus affects only a specific sublattice rather than the entire solid. Here, we introduce cross-chain antiferromagnets, where the stacking of two magnetic sublattices forms a pattern of intersecting atomic chains, allowing for the sublattice selectivity. We dub this antiferromagnetic (AFM) stacking X-type and demonstrate that it exhibits unique spin-dependent transport properties not present in conventional magnets. Through high-throughput analyses and computations, we unveil three prototypes of X-type AFM stacking and identify 15 candidate candidates. Using $β$-Fe$_{2}$PO$_{5}$ as a representative X-type antiferromagnet, we predict sublattice-selective spin-polarized transport driven by the X-type stacking, where one magnetic sublattice conducts, while the other does not. Consequently, a spin torque can be exerted solely on a single sublattice, leading to unconventional ultrafast dynamics of the Nèel vector capable of deterministic switching of the AFM domains. Our work uncovers a previously overlooked type of magnetic moment stacking and reveals sublattice-selective physical properties promising for high-performance spintronic applications.

cond-mat.mtrl-sci↗

arXiv2025

Metal-organic Pulsed Laser Deposition for Complex Oxide Heterostructures

Point defects in complex oxide thin films play a critical role in determining material properties but remain challenging to control with precision. This study introduces metal-organic pulsed laser deposition (MOPLD) as a novel synthesis technique for the precise manipulation of these defects, using LaAlO3/SrTiO3 (LAO/STO) as a model system. By employing titanium tetraisopropoxide (TTIP) as the titanium precursor, MOPLD achieves refined stoichiometric control in STO layers while preserving their structural integrity, as confirmed by X-ray diffraction and Raman spectroscopy. Depth-resolved cathodoluminescence spectroscopy and density functional theory calculations reveal that increasing TTIP flux during STO growth enhances the [TiSr]/[VSr] ratio and reduces the [VO] concentration. These defect modifications lead to a significant improvement in the low-temperature mobility of the two-dimensional electron gas at the LAO/STO interface, evidenced by distinct Shubnikov-de Haas oscillations. This work underscores the potential of MOPLD to advance defect engineering in complex oxide heterostructures, opening new avenues for quantum material research.

cond-mat.mtrl-sci↗

arXiv2025

Two-dimensional antiferromagnets with non-relativistic spin splitting switchable by electric polarization

Spin-split antiferromagnets have significance for antiferromagnetic (AFM) spintronics due to their momentum dependent spin polarization which can be exploited for the control and detection of the AFM order parameter. Here, we explore the polar-layer stacking of AFM-ordered bilayers driving the emergence of reversable electric polarization and non-relativistic spin splitting (NRSS) of their band structure. Based on the spin-space group approach, we identify several representative two-dimensional AFM materials which exhibit different types of NRSS when stacked into a polar bilayer. We demonstrate that NRSS can have both altermagnetic and non-altermagnetic origins and elucidate symmetry requirements for NRSS to be switchable by electric polarization. We argue that the electric polarization switching of NRSS in polar AFM bilayers may be more practical for device applications than the current-induced Néel vector switching.

cond-mat.mtrl-sci↗