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Eylon Persky

Publications and source records attributed to Eylon Persky.

10 recordsLinked to original sources

Revealing quantum geometry effects in magic angle twisted bilayer graphene using the circular photogalvanic effect

We report a photocurrent studies of a magic angle twisted bilayer graphene device using near infrared light. Through photocurrent imaging and polarization dependence, we separate the photo-thermoelectric effect from the photogalvanic effect. We observe a circular photogalvanic effect (CPGE) over a wide range of doping and temperature. The CPGE at normal incidence constraints the symmetry of the system to C$_1$, and points to a Berry curvature dipole, in agreement with theoretical predictions for strained graphene. Remarkably, the CPGE vanishes for filling $-2.5 < \nu < -1.5$, suggesting an additional symmetry breaking in that regime. Insight into this effect is obtained through Berry curvature dipole calculations, which emphasize a novel symmetry breaking effect near $\nu=-2$.

cond-mat.str-el

Optical control of orbital magnetism in magic angle twisted bilayer graphene

Flat bands in graphene-based moir\'e structures host a wide range of emerging strongly correlated and topological phenomena. Optically probing and controlling them can reveal important information such as symmetry and dynamics, but have so far been challenging due to the small energy gap compared to optical wavelengths. Here, we report near infrared optical control of orbital magnetism and associated anomalous Hall effects (AHE) in a magic angle twisted bilayer graphene (MATBG) on monolayer WSe$_2$ device. We show that the properties of the AHE, such as hysteresis and amplitude, can be controlled by light near integer moir\'e fillings, where spontaneous ferromagnetism exists. By modulating the light helicity, we observe periodic modulation of the transverse resistance in a wide range of fillings, indicating light induced orbital magnetization through a large inverse Faraday effect. At the transition between metallic and AHE regimes, we also reveal large and random switching of the Hall resistivity, which are attributed to optical control of percolating cluster of magnetic domains. Our results open the door to optical manipulation of correlation and topology in MATBG and related structures.

cond-mat.str-el

Imaging orbital Rashba induced charge transport anisotropy

Identifying orbital textures and their effects on the electronic properties of quantum materials is a critical element in developing orbitronic devices. However, orbital effects are often entangled with the spin degree of freedom, making it difficult to uniquely identify them in charge transport phenomena. Here, we present a combination of scanning superconducting quantum interference device (SQUID) current imaging, global transport measurements, and theoretical analysis, that reveals a direct contribution of orbital textures to the linear charge transport of 2D systems. Specifically, we show that in the LaAlO$_3$/SrTiO$_3$ interface, which lacks both rotation and inversion symmetries, an anisotropic orbital Rashba coupling leads to conductivity anisotropy in zero magnetic field. We experimentally demonstrate this result by locally measuring the conductivity anisotropy, and correlating its appearance to the non-linear Hall effect, showing that the two phenomena have a common origin. Our results lay the foundations for an all--electrical probing of orbital currents in two-dimensional systems.

cond-mat.mes-hall

Possible Unconventional Surface Superconductivity in the Half-Heusler YPtBi

We report an extensive study of the noncentrosymmetric half-Heusler superconductor YPtBi, revealing an unusual relation between bulk superconductivity and the possible appearance of surface superconductivity on the (111) oriented surface, at temperatures up to 3 times the bulk transition temperature. Transport measurements confirmed the low carrier density of the material and its bulk superconducting transition, which was also observed in ac susceptibility through mutual inductance (MI) measurements. However, a weak signature of superconductivity in the MI measurements appeared much above the bulk transition temperature, which was further observed in scanning tunneling spectroscopy, pointing to a possible surface superconducting state. Polar Kerr effect measurements suggest that while the bulk superconductor may exhibit an unusual nodal superconducting state, only the surface state breaks time reversal symmetry. Complementary tunneling measurements on LuPtBi are used to establish the observations on YPtBi, while density-functional theory calculations may shed light on the origin of this unusual surface state.

cond-mat.supr-con

Magnetic memory and spontaneous vortices in a van der Waals superconductor

Doped Mott insulators exhibit some of the most intriguing quantum phases of matter, including quantum spin-liquids, unconventional superconductors, and non-Fermi liquid metals. Such phases often arise when itinerant electrons are close to a Mott insulating state, and thus experience strong spatial correlations. Proximity between different layers of van der Waals heterostructures naturally realizes a platform for experimentally studying the relationship between localized, correlated electrons and itinerant electrons. Here, we explore this relationship by studying the magnetic landscape of 4Hb-TaS2, which realizes an alternate stack of a candidate spin liquid and a superconductor. We report on a spontaneous vortex phase whose vortex density can be trained in the normal state. We show that time reversal symmetry is broken above Tc, indicating the presence of a magnetic phase independent of the superconductor. Strikingly, this phase does not generate detectable magnetic signals. We use scanning superconducting quantum interference device (SQUID) microscopy to show that it is incompatible with ferromagnetic ordering. The discovery of this new form of hidden magnetism illustrates how combining superconductivity with a strongly correlated system can lead to new, unexpected physics.

cond-mat.supr-con

Anomalous Transport in High-Mobility Superconducting SrTiO$_3$ Thin Films

The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO$_3$ films with low-temperature mobility exceeding 42,000 cm$^2$V$^{-1}$s$^{-1}$ at low carrier density of 3 x 10$^{17}$ cm$^{-3}$ were achieved. A sudden and sharp decrease in residual resistivity accompanied by an enhancement in the superconducting transition temperature were observed across the second Lifshitz transition (LT) where the third band becomes occupied, revealing dominant intra-band scattering. These films further revealed an anomalous behavior in the Hall carrier density as a consequence of the antiferrodistortive (AFD) transition and the temperature-dependence of the Hall scattering factor. Using hybrid MBE growth, phenomenological modeling, temperature-dependent transport measurements, and scanning superconducting quantum interference device imaging, we provide critical insights into the important role of inter- vs intra-band scattering and of AFD domain walls on normal-state and superconducting properties of SrTiO$_3$.

cond-mat.supr-con

Non-universal current flow near the metal-insulator transition in an oxide interface

In systems near phase transitions, macroscopic properties often follow algebraic scaling laws, determined by the dimensionality and the underlying symmetries of the system. The emergence of such universal scaling implies that microscopic details are irrelevant. Here, we locally investigate the scaling properties of the metal-insulator transition at the LaAlO3/SrTiO3 interface. We show that, by changing the dimensionality and the symmetries of the electronic system, coupling between structural and electronic properties prevents the universal behavior near the transition. By imaging the current flow in the system, we reveal that structural domain boundaries modify the filamentary flow close to the transition point, preventing a fractal with the expected universal dimension from forming. Our results offer a generic platform to engineer electronic transitions on the nanoscale.

cond-mat.mes-hall

Current-induced nonuniform enhancement of sheet resistance in Ar+ irradiated SrTiO3

The sheet resistance Rs of Ar+ irradiated SrTiO3 in patterns with a length scale of several microns increases significantly below 40 K in connection with driving currents exceeding a certain threshold. The initial lower Rs is recovered upon warming with accelerated recovery around 70 and 160 K. Scanning superconducting quantum interference device microscopy shows local irreversible changes in the spatial distribution of the current with a length scale of several microns. We attribute the observed nonuniform enhancement of Rs to the attraction of the charged single-oxygen and dioxygen vacancies by the crystallographic domain boundaries in SrTiO3. The boundaries, which are nearly ferroelectric below 40 K, are polarized by the local electrical field associated with the driven current and the clustered vacancies which suppress conductivity in their vicinity and yield a noticeable enhancement in the device resistance when the current path width is on the order of the boundary extension. The temperatures of accelerated conductivity recovery are associated with the energy barriers for the diffusion of the two types of vacancies.

cond-mat.supr-con

Electrostatic modulation of the lateral carrier density profile in field effect devices with non-linear dielectrics

We study the effects of electrostatic gating on the lateral distribution of charge carriers in two dimensional devices, in a non-linear dielectric environment. We compute the charge distribution using the Thomas-Fermi approximation to model the electrostatics of the system. The electric field lines generated by the gate are focused at the edges of the device, causing an increased depletion near the edges, compared to the center of the device. This effect strongly depends on the dimensions of the device, and the non-linear dielectric constant of the substrate. We experimentally demonstrate this effect using scanning superconducting interference device (SQUID) microscopy images of current distributions in gated LaAlO$_3$/SrTiO$_3$ heterostructures.

cond-mat.mes-hall

Mechanical control of individual superconducting vortices

Manipulating individual vortices in a deterministic way is challenging, ideally, manipulation should be effective, local, and tunable in strength and location. Here, we show that vortices interact with strain fields generated by mechanical stress. We utilized this interaction to move individual vortices in thin superconducting films via local mechanical contact, without magnetic field or current. We used a scanning superconducting quantum interference device (SQUID) to image vortices and to apply local vertical stress with the tip of our sensor. Vortices were attracted to the contact point, relocated, and were stable at their new location. We show that vortices move only after contact and that more effective manipulation is achieved with stronger force and longer contact time. Mechanical manipulation of vortices provides a local view of the interaction between strain and nanomagnetic objects as well as controllable, effective, and reproducible manipulation technique.

cond-mat.supr-con