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Eymana Maria

Publications and source records attributed to Eymana Maria.

2 recordsLinked to original sources

Origin of the reaction temperature in solid-state materials synthesis

Temperature plays a crucial role in solid-state materials synthesis, but there is currently no mechanistic theory to explain or predict which temperature is best to conduct a solid-state reaction. Reactions between powder precursors are conventionally assumed to be slow diffusion-limited processes; however, recent in situ experiments show that solid-state reactions can complete in minutes above a critical onset temperature. Here, we present evidence that a transient liquid phase forms above the metastable eutectic temperature, and that this non-equilibrium liquid serves as a fast diffusion medium to intermix precursors and initiate a solid-state reaction. This thermodynamic principle is agnostic to the structure or chemistry of the reactants, and can be applied towards the synthesis and manufacturing of a wide range of complex materials.

cond-mat.mtrl-sci

Carrier transport and performance limit of semi-transparent photovoltaics: CuIn$_{1-x}$Ga$_x$Se$_2$ as a case study

Semi-transparent photovoltaic devices for building integrated applications have the potential to provide simultaneous power generation and natural light penetration. CuIn$_{1-x}$Ga$_x$Se$_2$ (CIGS) has been established as a mature technology for thin-film photovoltaics, however, its potential for Semi-Transparent Photovoltaics (STPV) is yet to be explored. In this paper, we present its carrier transport physics explaining the trend seen in recently published experiments. STPV requires deposition of films of only a few hundred nanometers to make them transparent and manifests several unique properties compared to a conventional thin-film solar cell. Our analysis shows that the short-circuit current, Jsc is dominated by carriers generated in the depletion region, making it nearly independent of bulk and back-surface recombination. The bulk recombination, which limits the open-circuit voltage Voc, appears to be higher than usual attributable to numerous grain boundaries. When the absorber layer is reduced below 500 nm, grain size reduces resulting in more grain boundaries and higher resistance. This produces an inverse relationship between series resistance and absorber thickness. We also present a thickness-dependent model of shunt resistance showing its impact in these ultra-thin devices. For various scenarios of bulk and interface recombinations, shunt and series resistances, AVT and composition of CuIn$_{1-x}$Ga$_x$Se$_2$, we project the efficiency limit which - for most practical cases - is found to be $\leq$10% for AVT $\geq$25%.

physics.app-ph