arXiv subjects

F. Amet

Publications and source records attributed to F. Amet.

13 recordsLinked to original sources

arXiv2026

Fast Microwave-free State Preparation and Measurement of Superconducting Qubits

Fast, high-fidelity, scalable state preparation and measurement is critical to the realization of a quantum computing system. The state-of-the-art methods for preparation and readout of superconducting qubits require finely tuned microwave signals and ~100 ns of measurement time, which are major obstacles to the scalability and performance of superconducting quantum computers. Here, we have demonstrated novel, microwave-free methods for both preparation and readout of superconducting qubits with >99% fidelity in only 10 ns for either operation while maintaining qubit coherence. This technology is compatible with scalable superconducting digital control systems, and using quantum flux parametrons for amplification, we demonstrated full quantum-to-digital conversion in only 15 ns, which is an order of magnitude faster than state-of-the-art microwave-based techniques.

quant-ph↗

arXiv2021

One-Dimensional Edge Contact to Encapsulated MoS2 with a Superconductor

Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material's electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a Type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 Kelvin, which has ramifications for future fabrication recipes.

cond-mat.mes-hall↗

arXiv2020

Overdamped Phase Diffusion in hBN Encapsulated Graphene Josephson Junctions

We investigate the zero-bias behavior of Josephson junctions made of encapsulated graphene boron nitride heterostructures in the long ballistic junction regime. For temperatures down to 2.7K, the junctions appear non-hysteretic with respect to the switching and retrapping currents $I_C$ and $I_R$. A small non-zero resistance is observed even around zero bias current, and scales with temperature as dictated by the phase diffusion mechanism. By varying the graphene carrier concentration we are able to confirm that the observed phase diffusion mechanism follows the trend for an overdamped Josephson junction. This is in contrast with the majority of graphene-based junctions which are underdamped and shorted by the environment at high frequencies.

cond-mat.mes-hall↗

arXiv2020

Zero-bias crossings and peculiar Shapiro maps in graphene Josephson junctions

The AC Josephson effect manifests itself in the form of "Shapiro steps" of quantized voltage in Josephson junctions subject to RF radiation. This effect presents an early example of a driven-dissipative quantum phenomenon and is presently utilized in primary voltage standards. Shapiro steps have also become one of the standard tools to probe junctions made in a variety of novel materials. Here, we study Shapiro steps in a widely tunable graphene-based Josephson junction. We investigate the variety of patterns that can be obtained in this well-understood system depending on the carrier density, temperature, RF frequency, and magnetic field. Although the patterns of Shapiro steps can change drastically when just one parameter is varied, the overall trends can be understood and the behaviors straightforwardly simulated. The resulting understanding may help in interpreting similar measurements in more complex materials.

cond-mat.mes-hall↗

arXiv2019

Anomalous Phase Dynamics of Driven Graphene Josephson Junctions

Josephson junctions with weak-links of exotic materials allow the elucidation of the Josephson effect in previously unexplored regimes. Further, such devices offer a direct probe of novel material properties, for example in the search for Majorana fermions. In this work, we report on DC and AC Josephson effect of high-mobility, hexagonal boron nitride (h-BN) encapsulated graphene Josephson junctions. On the application of RF radiation, we measure phase-locked Shapiro steps. An unexpected bistability between $\pm 1$ steps is observed with switching times on the order of seconds. A critical scaling of a bistable state is measured directly from the switching time, allowing for direct comparison to numerical simulations. We show such intermittent chaotic behavior is a consequence of the nonlinear dynamics of the junction and has a sensitive dependence on the current-phase relation. This work draws connections between nonlinear phenomena in dynamical systems and their implications for ongoing condensed matter experiments exploring topology and exotic physics.

cond-mat.mes-hall↗

arXiv2019

2$Φ_{0}$-periodic magnetic interference in ballistic graphene Josephson junctions

We investigate supercurrent interference patterns measured as a function of magnetic field in ballistic graphene Josephson junctions. At high doping, the expected $Φ_{0}$-periodic "Fraunhofer" pattern is observed, indicating a uniform current distribution. Close to the Dirac point, we find anomalous interference patterns with an apparent 2$Φ_{0}$ periodicity, similar to that predicted for topological Andreev bound states carrying a charge of $e$ instead of $2e$. This feature persists with increasing temperature, ruling out a non-sinusoidal current-phase relationship. It also persists in junctions in which sharp vacuum edges are eliminated. Our results indicate that the observed behavior may originate from an intrinsic property of ballistic graphene Josephson junctions, though the exact mechanism remains unclear.

cond-mat.mes-hall↗

arXiv2019

Chiral Quasiparticle Tunneling Between Quantum Hall Edges in Proximity with a Superconductor

We study a two-terminal graphene Josephson junction with contacts shaped to form a narrow constriction, less than 100nm in length. The contacts are made from type II superconducting contacts and able to withstand magnetic fields high enough to reach the quantum Hall (QH) regime in graphene. In this regime, the device conductance is determined by edge states, plus the contribution from the constricted region. In particular, the constriction area can support supercurrents up to fields of ~2.5T. Moreover, enhanced conductance is observed through a wide range of magnetic fields and gate voltages. This additional conductance and the appearance of supercurrent is attributed to the tunneling between counter-propagating quantum Hall edge states along opposite superconducting contacts.

cond-mat.mes-hall↗

arXiv2019

Sub-Kelvin Lateral Thermal Transport in Diffusive Graphene

In this work, we report on hot carrier diffusion in graphene across large enough length scales that the carriers are not thermalized across the crystal. The carriers are injected into graphene at one site and their thermal transport is studied as a function of applied power and distance from the heating source, up to tens of micrometers away. Superconducting contacts prevent out-diffusion of hot carriers to isolate the electron-phonon coupling as the sole channel for thermal relaxation. As local thermometers, we use the amplitude of the Universal Conductance Fluctuations, which varies monotonically as a function of temperature. By measuring the electron temperature simultaneously along the length we observe a thermal gradient which results from the competition between electron-phonon cooling and lateral heat flow.

cond-mat.mes-hall↗

arXiv2016

Ballistic graphene Josephson junctions from the short to the long regime

We investigate the critical current, $I_C$, of ballistic Josephson junctions made of encapsulated graphene/boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, $I_S$ is found to scale as $\propto \exp(-k_bT/δE)$. The extracted energies $δE$ are independent of the carrier density and proportional to the level spacing of the ballistic cavity, as determined from Fabry-Perot oscillations of the junction normal resistance. As $T\rightarrow 0$ the critical current of a long (or short) junction saturates at a level determined by the product of $δE$ (or $Δ$) and the number of the junction's transversal modes.

cond-mat.mes-hall↗

arXiv2014

Composite Fermions and Broken Symmetries in Graphene

The electronic properties of graphene are described by a Dirac Hamiltonian with a fourfold symmetry of spin and valley. This symmetry may yield novel fractional quantum Hall (FQH) states at high magnetic field depending on the relative strength of symmetry breaking interactions. However, observing such states in transport remains challenging in graphene, as they are easily destroyed by disorder. In this work, we observe in the first two Landau levels (v<6) the composite-fermion sequences of FQH states at p/(2p+1) between each integer filling factor. In particular, odd numerator fractions appear between v=1 and v=2, suggesting a broken valley symmetry, consistent with our observation of a gap at charge neutrality and zero field. Contrary to our expectations, the evolution of gaps in a parallel magnetic field suggests that states in the first Landau level are not spin-polarized even up to very large out of plane fields.

cond-mat.mes-hall↗

arXiv2014

Selective equilibration of spin and valley polarized quantum Hall edge states in graphene

We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining regions. Progress in device quality allows us to study scattering between edge states when the four-fold degeneracy of the Landau level is lifted by electron correlations, causing edge states to be spin and/or valley polarized. In this new regime, we observe a dramatic departure from the equilibration seen in more disordered devices: edge states with opposite spins propagate without mixing. As a result, the degree of equilibration inferred from transport can reveal the spin polarization of the ground state at each filling factor. In particular, the first Landau level is shown to be spin-polarized at half-filling, providing an independent confirmation of a conclusion of Ref.[1]. The conductance in the bipolar regime is strongly suppressed, indicating that co-propagating edge states, even with the same spin, do not equilibrate along PN interfaces. We attribute this behavior to the formation of an insulating nu=0 stripe at the PN interface.

cond-mat.mes-hall↗

arXiv2013

Insulating behavior at the neutrality point in dual-gated, single-layer graphene

The fate of the low-temperature conductance at the charge-neutrality (Dirac) point in a single sheet of graphene is investigated down to 20 mK. As the temperature is lowered, the peak resistivity diverges with a power-law behavior and becomes as high as several Megohms per square at the lowest temperature, in contrast with the commonly observed saturation of the conductivity. As a perpendicular magnetic field is applied, our device remains insulating and directly transitions to the broken-valley-symmetry, nu=0 quantum Hall state, indicating that the insulating behavior we observe at zero magnetic field is a result of broken valley symmetry. Finally we discuss the possible origins of this effect.

cond-mat.mes-hall↗

arXiv2011

Tunneling Spectroscopy of Graphene-Boron Nitride Heterostructures

We report on the fabrication and measurement of a graphene tunnel junction using hexagonal-boron nitride as a tunnel barrier between graphene and a metal gate. The tunneling behavior into graphene is altered by the interactions with phonons and the presence of disorder. We extract prop- erties of graphene and observe multiple phonon-enhanced tunneling thresholds. Finally, differences in the measured properties of two devices are used to shed light on mutually-contrasting previous results of scanning tunneling microscopy in graphene.

cond-mat.mes-hall↗