arXiv subjects

F. Bertran

Publications and source records attributed to F. Bertran.

At least 19 recordsLinked to original sources

arXiv2025

Uncovering surface states of the Dirac semimetal BaMg2Bi2

BaMg2Bi2 is a Dirac semimetal characterized by a simple Dirac cone crossing the Fermi level at the center of the Brillouin zone, protected by C3 rotational symmetry. Together with its Sr-based analogue SrMg2Bi2, it has been proposed as a promising candidate for a chemically driven topological switch: while SrMg2Bi2 is an insulator, BaMg2Bi2 exhibits non-trivial topological features. A detailed understanding of its electronic structure is essential to elucidate its electronic and transport properties. Previous photoemission studies confirmed the Dirac nature of BaMg2Bi2, but were limited to high photon energies, which hindered direct comparison with density functional theory calculations (DFT), due to reduced resolution and higher-frequency matrix-element modulation in that regime. In this work, we combine high-resolution angle-resolved photoemission spectroscopy (ARPES) and DFT calculations to get full insight on the valence band states, providing a comprehensive picture of the low-energy electronic structure. Our measurements reveal the presence of previously unobserved surface states. We found that they are topologically trivial, but they unlock a more comprehensive understanding of the material's behavior, reconciling previous discrepancies between experiment and theory.

cond-mat.str-el↗

arXiv2025

Spin-degenerate bulk bands and topological surface states associated with Dirac nodal lines in RuO2

Altermagnets are a novel platform to realize exotic electromagnetic properties distinct from those of conventional ferromagnets and antiferromagnets. We report results of micro-focused angle-resolved photoemission spectroscopy (ARPES) on RuO2, in which its altermagnetic nature has been under fierce debate in connection with crystal-orientation-dependent spintronic functionalities. By elucidating the band structure of the (100), (110) and (101) surfaces of a bulk single crystal using micro-ARPES, we found that, irrespective of the surface orientation, the experimental band structures show a good agreement with the bulk-band calculations for the nonmagnetic phase, but display a severe disagreement with those for the antiferromagnetic phase. Moreover, spin-resolved ARPES signifies a negligible spin polarization in the bulk bands, suggesting the absence of antiferromagnetism and altermagnetic spin splitting. In addition, we identified a nearly flat surface band and a dispersive one near the Fermi level at the (100)/(110) and (101) surfaces, respectively. Our first-principles calculations and analysis of Berry phase attribute these states to the topological surface bands emerging from the bulk Dirac nodal lines around the Fermi level. Our results indicate that such topological surface/interface states must be considered to understand the spintronic functionalities of RuO2, and may provide new insights into its catalytic characteristics.

cond-mat.mtrl-sci↗

arXiv2023

Spin-momentum locking and ultrafast spin-charge conversion in ultrathin epitaxial Bi$_{1-x}$Sb$_x$ topological insulator

The helicity of 3D topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an efficient method to convert charge currents into spin currents, and vice-versa, through the Rashba-Edelstein effect. However, experimental signatures of these surface states to the spin-charge conversion are extremely difficult to disentangle from bulk state contributions. Here, we combine spin- and angle-resolved photo-emission spectroscopy, and time-resolved THz emission spectroscopy to categorically demonstrate that spin-charge conversion arises mainly from the surface state in Bi$_{1-x}$Sb$_x$ ultrathin films, down to few nanometers where confinement effects emerge. We correlate this large conversion efficiency, typically at the level of the bulk spin Hall effect from heavy metals, to the complex Fermi surface obtained from theoretical calculations of the inverse Rashba-Edelstein response. %We demonstrate this for film thickness down to a few nanometers, Both surface state robustness and sizeable conversion efficiency in epitaxial Bi$_{1-x}$Sb$_x$ thin films bring new perspectives for ultra-low power magnetic random-access memories and broadband THz generation.

cond-mat.mtrl-sci↗

arXiv2022

Orbital-selective Band Hybridisation at the Charge Density Wave Transition in Monolayer TiTe$_2$

An anomalous $(2\times2)$ charge density wave (CDW) phase emerges in monolayer 1T-TiTe$_2$ which is absent for the bulk compound, and whose origin is still poorly understood. Here, we investigate the electronic band structure evolution across the CDW transition using temperature-dependent angle-resolved photoemission spectroscopy. Our study reveals an orbital-selective band hybridisation between the backfolded conduction and valence bands occurring at the CDW phase transition, which in turn leads to a significant electronic energy gain, underpinning the CDW transition. For the bulk compound, we show how this energy gain is almost completely suppressed due to the three-dimensionality of the electronic band structure, including via a $k_z$-dependent band inversion which switches the orbital character of the valence states. Our study thus sheds new light on how control of the electronic dimensionalilty can be used to trigger the emergence of new collective states in 2D materials.

cond-mat.str-el↗

arXiv2021

Valence state determines the band magnetocrystalline anisotropy in 2D rare-earth/noble-metal compounds

In intermetallic compounds with zero-orbital momentum ($L=0$) the magnetic anisotropy and the electronic band structure are interconnected. Here, we investigate this connection on divalent Eu and trivalent Gd intermetallic compounds. We find by X-ray magnetic circular dichroism an out-of-plane easy magetization axis in 2D atom-thick EuAu$_2$. Angle-resolved photoemission and density-functional theory prove that this is due to strong $f-d$ band hybridization and Eu$^{2+}$ valence. In contrast, the easy in-plane magnetization of the structurally-equivalent GdAu$_2$ is ruled by spin-orbit-split $d$-bands, notably Weyl nodal lines, occupied in the Gd$^{3+}$ state. Regardless of the $L$ value, we predict a similar itinerant electron contribution to the anisotropy of analogous compounds.

cond-mat.mtrl-sci↗

arXiv2021

Photoemission signature of momentum-dependent hybridization in CeCoIn$_5$

Hybridization between $f$ electrons and conduction bands ($c$-$f$ hybridization) is a driving force for many unusual phenomena. To provide insight into it, systematic studies of CeCoIn$_5$ heavy fermion superconductor have been performed by angle-resolved photoemission spectroscopy (ARPES) in a large angular range at temperature of $T=6$ K. The used photon energy of 122 eV corresponds to Ce $4d$-$4f$ resonance. Calculations carried out with relativistic multiple scattering Korringa-Kohn-Rostoker method and one-step model of photoemission yielded realistic simulation of the ARPES spectra indicating that Ce-In surface termination prevails. Surface states, which have been identified in the calculations, contribute significantly to the spectra. Effects of the hybridization strongly depend on wave vector. They include a dispersion of heavy electrons and bands gaining $f$-electron character when approaching Fermi energy. We have also observed a considerable variation of $f$-electron spectral weight at $E_F$, which is normally determined by both matrix element effects and wave vector dependent $c$-$f$ hybridization. Fermi surface scans covering a few Brillouin zones revealed large matrix element effects. A symmetrization of experimental Fermi surface, which reduces matrix element contribution, yielded a specific variation of $4f$-electron enhanced spectral intensity at $E_F$ around $\bar{\Gamma}$ and $\bar{M}$ points. Tight-binding approximation calculations for Ce-In plane provided the same universal distribution of $4f$-electron density for a range of values of the parameters used in the model.

cond-mat.str-el↗

arXiv2020

Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxide

Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, or as a building block of van der Waals heterostructures. The prerequisite to any sort of such applications is the knowledge of the electronic band structure, which we unveil using angle-resolved photoemission spectroscopy and rationalise with the help of density functional theory calculations. We discover dispersing bands related to electronic delocalisation within the top and bottom planes of the material, with two linear crossings reminiscent of those predicted in bilayer AA-stacked graphene, and semi-flat bands stemming from the chemical bridges between the two planes. This band structure is robust against exposure to air, and can be controled by exposure to oxygen. We provide an experimental lower-estimate of the band gap size of 5 eV and predict a full gap of 7.36 eV using density functional theory calculations.

cond-mat.mtrl-sci↗

arXiv2020

Tunable two-dimensional electron system at the (110) surface of SnO$_2$

We report the observation of a two-dimensional electron system (2DES) at the $(110)$ surface of the transparent bulk insulator SnO$_2$, and the tunability of its carrier density by means of temperature or Eu deposition. The 2DES is insensitive to surface reconstructions and, surprisingly, it survives even after exposure to ambient conditions --an extraordinary fact recalling the well known catalytic properties SnO$_2$. Our data show that surface oxygen vacancies are at the origin of such 2DES, providing key information about the long-debated origin of $n$-type conductivity in SnO$_2$, at the basis of a wide range of applications. Furthermore, our study shows that the emergence of a 2DES in a given oxide depends on a delicate interplay between its crystal structure and the orbital character of its conduction band.

cond-mat.mtrl-sci↗

arXiv2020

Engineering Co$_2$MnAl$_x$Si$_{1-x}$ Heusler compounds as a model system to correlate spin polarization, intrinsic Gilbert damping and ultrafast demagnetization

Engineering of magnetic materials for developing better spintronic applications relies on the control of two key parameters: the spin polarization and the Gilbert damping responsible for the spin angular momentum dissipation. Both of them are expected to affect the ultrafast magnetization dynamics occurring on the femtosecond time scale. Here, we use engineered Co2MnAlxSi1-x Heusler compounds to adjust the degree of spin polarization P from 60 to 100% and investigate how it correlates with the damping. We demonstrate experimentally that the damping decreases when increasing the spin polarization from 1.1 10-3 for Co2MnAl with 63% spin polarization to an ultra-low value of 4.10-4 for the half-metal magnet Co2MnSi. This allows us investigating the relation between these two parameters and the ultrafast demagnetization time characterizing the loss of magnetization occurring after femtosecond laser pulse excitation. The demagnetization time is observed to be inversely proportional to 1-P and as a consequence to the magnetic damping, which can be attributed to the similarity of the spin angular momentum dissipation processes responsible for these two effects. Altogether, our high quality Heusler compounds allow controlling the band structure and therefore the channel for spin angular momentum dissipation.

cond-mat.mtrl-sci↗

arXiv2019

Electronic reconstruction forming a $C_2$-symmetric Dirac semimetal in Ca$_3$Ru$_2$O$_7$

Electronic band structures in solids stem from a periodic potential reflecting the structure of either the crystal lattice or an electronic order. In the stoichiometric ruthenate Ca$_3$Ru$_2$O$_7$, numerous Fermi surface sensitive probes indicate a low-temperature electronic reconstruction. Yet, the causality and the reconstructed band structure remain unsolved. Here, we show by angle-resolved photoemission spectroscopy, how in Ca$_3$Ru$_2$O$_7$ a $C_2$-symmetric massive Dirac semimetal is realized through a Brillouin-zone preserving electronic reconstruction. This Dirac semimetal emerges in a two-stage transition upon cooling. The Dirac point and band velocities are consistent with constraints set by quantum oscillation, thermodynamic, and transport experiments, suggesting that the complete Fermi surface is resolved. The reconstructed structure -- incompatible with translational-symmetry-breaking density waves -- serves as an important test for band structure calculations of correlated electron systems.

cond-mat.str-el↗

arXiv2019

Weyl-like points from band inversions of spin-polarised surface states in NbGeSb

Band inversions are key to stabilising a variety of novel electronic states in solids, from topological surface states in inverted bulk band gaps of topological insulators to the formation of symmetry-protected three-dimensional Dirac and Weyl points and nodal-line semimetals. Here, we create a band inversion not of bulk states, but rather between manifolds of surface states. We realise this by aliovalent substitution of Nb for Zr and Sb for S in the ZrSiS family of nonsymmorphic semimetals. Using angle-resolved photoemission and density-functional theory, we show how two pairs of surface states, known from ZrSiS, are driven to intersect each other in the vicinity of the Fermi level in NbGeSb, as well as to develop pronounced spin-orbit mediated spin splittings. We demonstrate how mirror symmetry leads to protected crossing points in the resulting spin-orbital entangled surface band structure, thereby stabilising surface state analogues of three-dimensional Weyl points. More generally, our observations suggest new opportunities for engineering topologically and symmetry-protected states via band inversions of surface states.

cond-mat.mtrl-sci↗

arXiv2019

Ultra-low magnetic damping in Co 2 Mn-based Heusler compounds: promising materials for spintronic

The prediction of ultra-low magnetic damping in Co 2 MnZ Heusler half-metal thin-film magnets is explored in this study and the damping response is shown to be linked to the underlying electronic properties. By substituting the Z elements in high crystalline quality films (Co 2 MnZ with Z=Si, Ge, Sn, Al, Ga, Sb), electronic properties such as the minority spin band gap, Fermi energy position in the gap and spin polarization can be tuned and the consequence on magnetization dynamics analyzed. The experimental results allow us to directly explore the interplay of spin polarization, spin gap, Fermi energy position and the magnetic damping obtained in these films, together with ab initio calculation predictions. The ultra-low magnetic damping coefficients measured in the range 4.1 10-4-9 10-4 for Co 2 MnSi, Ge, Sn, Sb are the lowest values obtained on a conductive layer and offers a clear experimental demonstration of theoretical predictions on Half-Metal Magnetic Heusler compounds and a pathway for future materials design.

cond-mat.mtrl-sci↗

arXiv2019

Temperature-driven modification of surface electronic structure on bismuth, a topological border material

Single crystalline bismuth (Bi) is known to have a peculiar electronic structure which is very close to the topological phase transition. The modification of the surface states of Bi depending on the temperature are revealed by angle-resolved photoelectron spectroscopy (ARPES). At low temperature, the upper branch of the surface state merged to the projected bulk conduction bands around the $\bar{M}$ point of the surface Brillouin zone (SBZ). In contrast, the same branch merged to the projected bulk valence bands at high temperature (400 K). Such behavior could be interpreted as a topological phase transition driven by the temperature, which might be applicable for future spin-thermoelectric devices. We discuss the possible mechanisms to cause such transition, such as the thermal lattice distortion and electron-phonon coupling.

cond-mat.mtrl-sci↗

arXiv2019

Electronic band structure of ultimately thin silicon oxide on Ru(0001)

Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectric host material for two-dimensional materials (2D) and heterostructures. We determine the atomic structure and chemical bonding of the ultimately thin version of the oxide, epitaxially grown on Ru(0001). In particular, we establish the existence of two sub-lattices defined by metal-oxygen-silicon bridges involving inequivalent substrate sites. We further discover four electronic bands below Fermi level, at high binding energies, two of them forming a Dirac cone at K point, and two others forming semi-flat bands. While the latter two correspond to hybridized states between the oxide and the metal, the former relate to the topmost silicon-oxygen plane, which is not directly coupled to the substrate. Our analysis is based on high resolution X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy, scanning tunneling microscopy, and density functional theory calculations.

cond-mat.mtrl-sci↗

arXiv2018

Coherent and incoherent bands in La and Rh doped Sr3Ir2O7

In Sr2IrO4 and Sr3Ir2O7, correlations, magnetism and spin-orbit coupling compete on similar energy scales, creating a new context to study metal-insulator transitions (MIT). We use here Angle-Resolved photoemission to investigate the MIT as a function of hole and electron doping in Sr3Ir2O7, obtained respectively by Ir/Rh and Sr/La substitutions. We show that there is a clear reduction as a function of doping of the gap between a lower and upper band on both sides of the Fermi level, from 0.2eV to 0.05eV. Although these two bands have a counterpart in band structure calculations, they are characterized by a very different degree of coherence. The upper band exhibits clear quasiparticle peaks, while the lower band is very broad and loses weight as a function of doping. Moreover, their ARPES spectral weights obey different periodicities, reinforcing the idea of their different nature. We argue that a very similar situation occurs in Sr2IrO4 and conclude that the physics of the two families is essentially the same.

cond-mat.str-el↗

arXiv2018

Band structure and Fermi surfaces of the reentrant ferromagnetic superconductor Eu(Fe0.86Ir0.14)2As2

The electronic structure of the reentrant superconductor Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$ (T$_c$ = 22 K) with coexisting ferromagnetic order (T$_M$ = 18 K) is investigated using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy (STS). We study the in-plane and out-of-plane band dispersions and Fermi surface (FS) of Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$. The near E$_F$ Fe 3d-derived band dispersions near the $\Gamma$ and X high-symmetry points show changes due to Ir substitution, but the FS topology is preserved. From momentum dependent measurements of the superconducting gap measured at T = 5 K, we estimate an essentially isotropic s-wave gap ($\Delta\sim5.25\pm 0.25$ meV), indicative of strong-coupling superconductivity with 2$\Delta$/k$_{B}$T$_{c}\simeq$ 5.8. The gap gets closed at temperatures T $\geq$ 10 K, and this is attributed to the resistive phase which sets in at T$_M$ = 18 K due to the Eu$^{2+}$-derived magnetic order. The modifications of the FS with Ir substitution clearly indicates an effective hole doping with respect to the parent compound.

cond-mat.mtrl-sci↗

arXiv2018

High-density two-dimensional electron system induced by oxygen vacancies in ZnO

We realize a two-dimensional electron system (2DES) in ZnO by simply depositing pure aluminum on its surface in ultra-high vacuum, and characterize its electronic structure using angle-resolved photoemission spectroscopy. The aluminum oxidizes into alumina by creating oxygen vacancies that dope the bulk conduction band of ZnO and confine the electrons near its surface. The electron density of the 2DES is up to two orders of magnitude higher than those obtained in ZnO heterostructures. The 2DES shows two $s$-type subbands, that we compare to the $d$-like 2DESs in titanates, with clear signatures of many-body interactions that we analyze through a self-consistent extraction of the system self-energy and a modeling as a coupling of a 2D Fermi liquid with a Debye distribution of phonons.

cond-mat.mtrl-sci↗

arXiv2018

Co/Ni multilayers for spintronics: high spin-polarization and tunable magnetic anisotropy

In this paper we analyze in details the electronic properties of (Co/Ni) multilayers, a model system for spintronics devices. We use magneto-optical Kerr (MOKE), spin-polarized photoemission spectroscopy (SRPES), x-ray magnetic circular dichroism (XMCD) and anomalous surface diffraction experiments to investigate the electronic properties and perpendicular magnetic anisotropy (PMA) in [Co(x)/Ni(y)] single-crystalline stacks grown by molecular beam epitaxy.

cond-mat.mtrl-sci↗