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F. Budde

Publications and source records attributed to F. Budde.

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Quantitative study of molecular N_2 trapped in disordered GaN:O films

The structure of disordered GaN:O films grown by ion-assisted deposition is investigated using x-ray absorption near-edge spectroscopy and Raman spectroscopy. It is found that between 4 and 21 % of the nitrogen in the films is in the form of molecular N_2 that interacts only weakly with the surrounding matrix. The anion to cation ratio in the GaN:O host remains close to unity, and there is a close correlation between the N_2 fraction, the level of oxygen impurities, and the absence of short-range order in the GaN:O matrix.

cond-mat.mtrl-sci

Stabilization of amorphous GaN by oxygen

Ion assisted deposition (IAD) has been investigated for the growth of GaN, and the resulting films studied by x-ray diffraction and absorption spectroscopy and by transmission electron microscopy. IAD grown stoichiometric GaN consists of random-stacked quasicrystals of some 3 nm diameter. Amorphous material is formed only by incorporation of 15% or more oxygen, which we attribute to the presence of non-tetrahedral bonds centered on oxygen. The ionic favourability of heteropolar bonds and its strikingly simple constraint to even-membered rings is the likely cause of the instability of stoichiometric a-GaN.

cond-mat.mtrl-sci