F. C. Fobasso Mbognou

arXiv2026

Persistent altermagnetism

Persistent spin textures with collinear spin polarization are promising platforms for spintronics applications. However, their typically relativistic spin-orbit origin leads to weak spin splittings and fragile spin coherence. Here, we demonstrate a previously overlooked class of robust collinear spin polarization protected by mirror symmetry in combination with a strong exchange-driven altermagnetic order, which persists even in the presence of spin-orbit coupling. By combining first-principles calculations with a systematic classification of spin and magnetic layer groups, we identify this phenomenon-termed persistent altermagnetic spin polarization (PASP)-to occur in 158 spin layer groups and in representative materials including metallic V$_2$Te$_2$O, insulating La$_2$CuO$_4$, and semiconducting VSI$_2$. Furthermore, we theoretically demonstrate that PASP is ferroelectrically switchable in VSI$_2$. Finally, we show that this PASP switching can lead to large changes in spin-filtering conductance in a model all-altermagnetic junction. Our results open the possibility of employing PASP in all-altermagnetic magnetic memory and spin-transistor devices and establish universal principles of altermagnetism in spin-orbit-coupled monolayers.

cond-mat.mes-hall↗

arXiv2026

Topological textures and emergent altermagnetic signatures in ultrathin BiFeO3

Magnetoelectric multiferroics, materials with intrinsically coupled electric polarization and magnetic order, promise ultralow-power switching, nonvolatile memory, and energy-efficient signal transduction. Yet practical deployment demands ultrathin films down to the atomic limit, where both orders typically degrade. Maintaining both order parameters at the thinnest scales in complex oxides remains a tremendous challenge, as uncompensated bound charge drives nanoscale depolarization in most ferroelectrics, while off-stoichiometry, reduced anisotropy, and charge transfer can produce magnetic dead layers in ultrathin oxides at substrate interfaces. Here, we realize a multiferroic phase of BiFeO3 that not only sustains both order parameters at room temperature with no dead layer but also exhibits signatures of emergent altermagnetism in the four-unit-cell, ultrathin limit. First-principles calculations, spin symmetry analysis, atomic-resolution imaging, and angle-resolved magnetic imaging reveal that short-circuit electrostatic boundary conditions, together with epitaxial strain, drive a continuous second-order, thickness-driven phase transition that enables the formation of multiferroic topological textures. Moreover, the imposed boundary conditions stabilize a d-wave altermagnetic time-reversal symmetry breaking, with corresponding signatures observed in magnetic circular dichroism. Collectively, these results establish a pathway to stabilize unconventional multiferroicity at device-relevant thicknesses, reframing scaling limits for oxide electronics.

cond-mat.mtrl-sci↗