F. Cadiz — Page 2 | Searcharxiv

arXiv2013

The effect of Pauli blockade on spin-dependent diffusion in a degenerate electron gas

Spin-polarized transport of photo-electrons in bulk, p-type GaAs is investigated in the Pauli blockade regime. In contrast to usual spin diffusion processes in which the spin polarization decreases with distance traveled due to spin relaxation, images of the polarized photo-luminescence reveal a spin-filter effect in which the spin polarization increases during transport over the first 2 microns from 26 % to 38 %. This is shown to be a direct consequence of the Pauli Principle and the associated quantum degeneracy pressure which results in a spin-dependent increase in the minority carrier diffusion constants and mobilities. The central role played by the quantum degeneracy pressure is confirmed via the observation of a spin-dependent increase in the photo-electron volume and a spin-charge coupling description of this is presented.

cond-mat.mes-hall↗

arXiv2013

Absence of an intrinsic value for the surface recombination velocity in doped semiconductors

A self-consistent expression for the surface recombination velocity $S$ and the surface Fermi level unpinning energy as a function of light excitation power ($P$) is presented for n- and p-type semiconductors doped above the 10$^{16}$ cm$^{-3}$ range. Measurements of $S$ on p-type GaAs films using a novel polarized microluminescence technique are used to illustrate two limiting cases of the model. For a naturally oxidized surface $S$ is described by a power law in $P$ whereas for a passivated surface $S^{-1}$ varies logarithmically with $P$. Furthermore, the variation in $S$ with surface state density and bulk doping level is found to be the result of Fermi level unpinning rather than a change in the intrinsic surface recombination velocity. It is concluded that $S$ depends on $P$ throughout the experimentally accessible range of excitation powers and therefore that no instrinsic value can be determined. Previously reported values of $S$ on a range of semiconducting materials are thus only valid for a specific excitation power.

cond-mat.mtrl-sci↗