arXiv subjects

F. Crasto de Lima

Publications and source records attributed to F. Crasto de Lima.

24 records · Page 2Linked to original sources

arXiv2019

Topological flat band, Dirac fermions and quantum spin Hall phase in 2D Archimedean lattices

Materials with designed properties arises in a synergy between theoretical and experimental approaches. In this study we explore the set of Archimedean lattices forming a guidance to its electronic properties and topological phases. Within these lattices, rich electronic structure emerge forming type-I and II Dirac fermions, topological flat bands and high-degeneracy points with linear and flat dispersions. Employing a tight-binding model, with spin-orbit coupling, we characterize a quantum spin Hall (QSH) phase in all Archimedean lattices. Our discussion is validated within density functional theory calculations, where we show the characteristic bands of the studied lattices arising in 2D carbon allotropes.

cond-mat.mes-hall↗

arXiv2019

Double flat bands in kagome twisted bilayers

We have studied how a generic bilayer kagome lattice behave upon layer rotation. We employed a Tight Binding model with one orbital per site and found (i) for low rotational angles, and at low energies, the same flat bands structure like in twisted bilayer graphene; though, for a larger value of the magic angle. Moreover, (ii) at high energies, due to the superstructure symmetry regions, we found the characteristics three band dispersion of the kagome lattice. In the latter, its band width decreases for lower angles confining them within a few meV. Therefore, we found in twisted kagome lattice the coexistence of two sets of flat bands in different energies and lying in different spatial regions of the bilayer system.

cond-mat.mes-hall↗

arXiv2019

Layertronic control of topological states in multilayer metal-organic frameworks

We investigate the layer localization control of two-dimensional states in multilayer metal-organic frameworks (MOFs). For finite stackings of (NiC4S4)3 MOFs, the weak van der Waals coupling between adjacent layers leads to a Fermi level dependent distribution of the electronic states in the monolayers. Such distribution is reflected in the topological edge states of multilayer nanoribbons. Moreover, by applying an external electric field, parallel to the stacking direction, the spacial localization of the electronic states can be controlled for a chosen Fermi energy. This localization behavior is studied comparing density functional theory calculations with a kagome lattice tight-binding model. Furthermore, for infinite stacked nanoribbons, a new V-gutter Dirac state is found in the side surfaces, which allows anisotropic current control by tuning the Fermi energy. Our results can be immediately extended to other kagome MOFs with eclipsed stackings, introducing a new degree of freedom (layer localization) to materials design.

cond-mat.mes-hall↗

arXiv2018

Quantum anomalous Hall effect in metal-bis(dithiolene), magnetic properties, doping and interfacing graphene

The realization of the Quantum anomalous Hall effect (QAHE) in two dimensional (2D) metal organic frameworks (MOFs), (MC$_4$S$_4$)$_3$ with M = Mn, Fe, Co, Ru and Rh, has been investigated based on a combination of first-principles calculations and tight binding models. Our results for the magnetic anisotropy energy (MAE) reveal that the out-of-plane (in-plane) magnetization is favored for M = Mn, Fe, and Ru (Co, and Rh). Given the structural symmetry of (MC$_4$S$_4$)$_3$, the QAHE takes place only for M = Mn, Fe and Ru. Such a quantum anomalous Hall phase has been confirmed through the calculation of the Chern number, and examining the formation of topologically protected (metallic) edge states. Further electron ($n$-type) doping of the MOFs has been done in order to place the Fermi level within the non-trivial energy gap; where we find that in (RuC$_4$S$_4$)$_3$, in addition to the up-shift of the Fermi level, the MAE energy increases by 40\%. Finally, we show that in MOF/graphene (vdW) interfaces, the Fermi level tunning can be done with an external electric field, which controls the charge transfer at the MOF/graphene interface, giving rise to switchable topologically protected edge currents in MOFs.

cond-mat.mtrl-sci↗

arXiv2017

Confinement and Fermion Doubling Problem in Dirac-like Hamiltonians

We investigate the interplay between confinement and the fermion doubling problem in Dirac-like Hamiltonians. Individually, both features are well known. First, simple electrostatic gates do not confine electrons due to the Klein tunneling. Second, a typical lattice discretization of the first-order derivative $k \rightarrow -i\partial_x$ skips the central point and allow spurious low-energy, highly oscillating solutions known as fermion doublers. While a no-go theorem states that the doublers cannot be eliminated without artificially breaking a symmetry, here we show that the symmetry broken by the Wilson's mass approach is equivalent to the enforcement of hard-wall boundary conditions, thus making the no-go theorem irrelevant when confinement is foreseen. We illustrate our arguments by calculating the following: (i) the band structure and transport properties across thin films of the topological insulator Bi$_2$Se$_3$, for which we use ab-initio density functional theory calculations to justify the model; and (ii) the band structure of zigzag graphene nanoribbons.

cond-mat.mes-hall↗

arXiv2017

Tuning the topological states in metal-organic bilayers

We have investigated the energetic stability and the electronic properties of metal-organic topological insulators bilayers (BLs), $(MC_4S_4)_3$-BL, with M=Ni and Pt, using first-principles calculations and tight-binding model. Our findings show that $(MC_4S_4)_3$-BL is an appealing platform to perform electronic band structure engineering, based on the topologically protected chiral edge states. The energetic stability of the BLs is ruled by van der Waals interactions; being the AA stacking the energetically most stable one. The electronic band structure is characterized by a combination of bonding and anti-bonding kagome band sets (KBSs), revealing that $(NiC_4S_4)_3$-BL presents a Z$_2$-metallic phase, whereas $(PtC_4S_4)_3$-BL may present both Z$_2$-metallic phase or quantum spin Hall phase. Those non-trivial topological states were confirmed by the formation of chiral edge states in $(MC_4S_4)_3$-BL nanoribbons. We show that the localization of the edge states can be controlled with a normal external electric field, breaking the mirror symmetry. Hence, the sign of electric field selects in which layer each set of edge states are located. Such a control on the (layer) localization, of the topological edge states, bring us an additional and interesting degree of freedom to control the transport properties in layered metal-organic topological insulator.

cond-mat.mtrl-sci↗