arXiv subjects

F. Guinea

Publications and source records attributed to F. Guinea.

At least 19 recordsLinked to original sources

arXiv2023

High-mobility compensated semimetals, orbital magnetization, and umklapp scattering in bilayer graphene moire superlattices

Twist-controlled moire superlattices (MS) have emerged as a versatile platform in which to realize artificial systems with complex electronic spectra. Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) form an interesting example of the MS that has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and electronic ratchet effect. Yet, the understanding of the BLG/hBN MS electronic properties has, at present, remained fairly limited. Here we develop a multi-messenger approach that combines standard magnetotransport techniques with low-energy sub-THz excitation to get insights into the properties of this MS. We show that BLG/hBN lattice alignment results in the emergence of compensated semimetals at some integer fillings of the moire bands separated by van Hove singularities where Lifshitz transition occurs. A particularly pronounced semimetal develops when 8 electrons reside in the moire unit cell, where coexisting high-mobility electron and hole systems feature a strong magnetoresistance reaching 2350 % already at B=0.25 T. Next, by measuring the THz-driven Nernst effect in remote bands, we observe valley splitting, pointing to an orbital magnetization characterized by a strongly enhanced effective g-factor of 340. Last, using THz photoresistance measurements, we show that the high-temperature conductivity of the BLG/hBN MS is limited by electron-electron umklapp processes. Our multi-facet analysis introduces THz-driven magnetotransport as a convenient tool to probe the band structure and interaction effects in vdW materials and provides a comprehension of the BLG/hBN MS.

cond-mat.mes-hall↗

arXiv2023

Giant atomic swirl in graphene bilayers with biaxial heterostrain

The study of moir\'e engineering started with the advent of van der Waals heterostructures in which stacking two-dimensional layers with different lattice constants leads to a moir\'e pattern controlling their electronic properties. The field entered a new era when it was found that adjusting the twist between two graphene layers led to strongly-correlated-electron physics and topological effects associated with atomic relaxation. Twist is now used routinely to adjust the properties of two-dimensional materials. Here, we investigate a new type of moir\'e superlattice in bilayer graphene when one layer is biaxially strained with respect to the other - so-called biaxial heterostrain. Scanning tunneling microscopy measurements uncover spiraling electronic states associated with a novel symmetry-breaking atomic reconstruction at small biaxial heterostrain. Atomistic calculations using experimental parameters as inputs reveal that a giant atomic swirl forms around regions of aligned stacking to reduce the mechanical energy of the bilayer. Tight-binding calculations performed on the relaxed structure show that the observed electronic states decorate spiraling domain wall solitons as required by topology. This study establishes biaxial heterostrain as an important parameter to be harnessed for the next step of moir\'e engineering in van der Waals multilayers.

cond-mat.mes-hall↗

arXiv2023

Extended magic phase in twisted graphene multilayers

Theoretical and experimental studies have verified the existence of ``magic angles'' in twisted bilayer graphene, where the twist between layers gives rise to flat bands and consequently highly correlated phases. Narrow bands can also exist in multilayers with alternating twist angles, and recent theoretical work suggests that they can also be found in trilayers with twist angles between neighboring layers in the same direction. We show here that flat bands exist in a variety of multilayers where the ratio between twist angles is close to coprime integers. We generalize previous analyses, and, using the chiral limit for interlayer coupling, give examples of many combinations of twist angles in stacks made up of three and four layers which lead to flat bands. The technique we use can be extended to systems with many layers. Our results suggest that flat bands can exist in graphene multilayers with angle disorder, that is, narrow samples of turbostatic graphite.

cond-mat.str-el↗

arXiv2020

Heterostrain rules the flat-bands in magic-angle twisted graphene layers

The moir\'e of twisted graphene bilayers can generate flat bands in which charge carriers do not posses enough kinetic energy to escape Coulomb interactions with each other leading to the formation of novel strongly correlated electronic states. This exceptionally rich physics relies on the precise arrangement between the layers.We survey published Scanning Tunnelling Microscope (STM) measurements to prove that near the magic angle, native heterostrain, the relative deformations between the layers, dominates twist in determining the flat bands. This is demonstrated at large doping where electronic correlations have a weak effect and where we also show that tip-induced strain can have a strong influence. In the opposite situation of low doping, we find that electronic correlation further normalize the flat bands in a way that strongly depends on experimental details.

cond-mat.mes-hall↗

arXiv2020

Charge-polarized interfacial superlattices in marginally twisted hexagonal boron nitride

When two-dimensional crystals are brought into close proximity, their interaction results in strong reconstruction of electronic spectrum and local crystal structure. Such reconstruction strongly depends on the twist angle between the two crystals and has received growing attention due to new interesting electronic and optical properties that arise in graphene and transitional metal dichalcogenides. Similarly, novel and potentially useful properties are expected to appear in insulating crystals. Here we study two insulating crystals of hexagonal boron nitride (hBN) stacked at a small twist angle. Using electrostatic force microscopy, we observe ferroelectric-like domains arranged in triangular superlattices with a large surface potential that is independent on the size and orientation of the domains as well as the thickness of the twisted hBN crystals. The observation is attributed to interfacial elastic deformations that result in domains with a large density of out-of-plane polarized dipoles formed by pairs of boron and nitrogen atoms belonging to the opposite interfacial surfaces. This effectively creates a bilayer-thick ferroelectric with oppositely polarized (BN and NB) dipoles in neighbouring domains, in agreement with our modelling. The demonstrated electrostatic domains and their superlattices offer many new possibilities in designing novel van der Waals heterostructures.

cond-mat.mes-hall↗

arXiv2019

Piezoelectricity in monolayer hexagonal boron nitride

Two-dimensional (2D) hexagonal boron nitride (hBN) is a wide-bandgap van der Waals crystal with a unique combination of properties, including exceptional strength, large oxidation resistance at high temperatures and optical functionalities. Furthermore, in recent years hBN crystals have become the material of choice for encapsulating other 2D crystals in a variety of technological applications, from optoelectronic and tunnelling devices to composites. Monolayer hBN, which has no center of symmetry, has been predicted to exhibit piezoelectric properties, yet experimental evidence is lacking. Here, by using electrostatic force microscopy, we observed this effect as a strain-induced change in the local electric field around bubbles and creases, in agreement with theoretical calculations. No piezoelectricity was found in bilayer and bulk hBN, where the centre of symmetry is restored. These results add piezoelectricity to the known properties of monolayer hBN, which makes it a desirable candidate for novel electromechanical and stretchable optoelectronic devices, and pave a way to control the local electric field and carrier concentration in van der Waals heterostructures via strain. The experimental approach used here also shows a way to investigate the piezoelectric properties of other materials on the nanoscale by using electrostatic scanning probe techniques.

cond-mat.mes-hall↗

arXiv2019

Colloquium: Spintronics in graphene and other two-dimensional materials

After the first unequivocal demonstration of spin transport in graphene (Tombros et al., 2007), surprisingly at room temperature, it was quickly realized that this novel material was relevant for both fundamental spintronics and future applications. Over the decade since, exciting results have made the field of graphene spintronics blossom, and a second generation of studies has extended to new two-dimensional (2D) compounds. This Colloquium reviews recent theoretical and experimental advances on electronic spin transport in graphene and related 2D materials, focusing on emergent phenomena in van der Waals heterostructures and the new perspectives provided by them. These phenomena include proximity-enabled spin-orbit effects, the coupling of electronic spin to light, electrical tunability, and 2D magnetism.

cond-mat.mes-hall↗

arXiv2019

Spin imbalance of charge carriers induced by an electric current

We analyze the contribution of the inhomogeneous magnetic field induced by an electrical current to the spin Hall effect in metals. The Zeeman coupling between the field and the electron spin leads to a spin dependent force, and to spin accumulation at the edges. We compare the effect of this relativistic correction to the electron dynamics to the features induced by the spin-orbit interaction. The effect of current induced magnetic fields on the spin Hall effect can be comparable to the extrinsic contribution from the spin-orbit interaction, although it does not require the presence of heavy elements with a strong spin-orbit interaction. The induced spins are oriented normal to the metal slab.

cond-mat.mes-hall↗

arXiv2019

Giant oscillations in a triangular network of one-dimensional states in marginally twisted graphene

The electronic properties of graphene superlattices have attracted intense interest that was further stimulated by the recent observation of novel many-body states at "magic" angles in twisted bilayer graphene (BLG). For very small ("marginal") twist angles of 0.1 deg, BLG has been shown to exhibit a strain-accompanied reconstruction that results in submicron-size triangular domains with the Bernal stacking. If the interlayer bias is applied to open an energy gap inside the domain regions making them insulating, marginally-twisted BLG is predicted to remain conductive due to a triangular network of chiral one-dimensional (1D) states hosted by domain boundaries. Here we study electron transport through this network and report giant Aharonov-Bohm oscillations persisting to temperatures above 100 K. At liquid helium temperatures, the network resistivity exhibits another kind of oscillations that appear as a function of carrier density and are accompanied by a sign-changing Hall effect. The latter are attributed to consecutive population of the flat minibands formed by the 2D network of 1D states inside the gap. Our work shows that marginally twisted BLG is markedly distinct from other 2D electronic systems, including BLG at larger twist angles, and offers a fascinating venue for further research.

cond-mat.mes-hall↗

arXiv2018

Strain-induced bound states in transition-metal dichalcogenide bubbles

We theoretically study the formation of single-particle bound states confined by strain at the center of bubbles in monolayers of transition-metal dichalcogenides (TMDs). Bubbles ubiquitously form in two-dimensional crystals on top of a substrate by the competition between van der Waals forces and the hydrostatic pressure exerted by trapped fluid. This leads to strong strain at the center of the bubble that reduces the bangap locally, creating potential wells for the electrons that confine states inside. We simulate the spectrum versus the bubble radius for the four semiconducting group VI TMDs, MoS$_2$, WSe$_2$, WS$_2$ and MoSe$_2$, and find an overall Fock-Darwin spectrum of bubble bound states, characterised by small deviations compatible with Berry curvature effects. We analyse the density of states, the state degeneracies, orbital structure and optical transition rules. Our results show that elastic bubbles in these materials are remarkably efficient at confining photocarriers.

cond-mat.mes-hall↗

arXiv2018

Polariton Hall Effect in Transition-Metal Dichalcogenides

We analyze the properties of strongly coupled excitons and photons in systems made of semiconducting two-dimensional transition-metal dichalcogenides embedded in optical cavities. Through a detailed microscopic analysis of the coupling we unveil novel, highly tunable features of the spectrum, that result in polariton splitting and a breaking of light-matter selection rules. The dynamics of the composite polaritons is influenced by the Berry phase arising both from their constituents and from the confinement-enhanced coupling. We find that light-matter coupling emerges as a mechanism that enhances the Berry phase of polaritons well beyond that of its elementary constituents, paving the way to achieve a polariton Hall effect.

cond-mat.mes-hall↗

arXiv2017

Modulation of Kekul\'e adatom ordering due to strain in graphene

Intervalley scattering of carriers in graphene at `top' adatoms may give rise to a hidden Kekul\'e ordering pattern in the adatom positions. This ordering is the result of a rapid modulation in the electron-mediated interaction between adatoms at the wavevector $K- K'$, which has been shown experimentally and theoretically to dominate their spatial distribution. Here we show that the adatom interaction is extremely sensitive to strain in the supporting graphene, which leads to a characteristic spatial modulation of the Kekul\'e order as a function of adatom distance. Our results suggest that the spatial distributions of adatoms could provide a way to measure the type and magnitude of strain in graphene and the associated pseudogauge field with high accuracy.

cond-mat.mes-hall↗

arXiv2017

Ultrathin graphene-based membrane with precise molecular sieving and ultrafast solvent permeation

Graphene oxide (GO) membranes continue to attract intense interest due to their unique molecular sieving properties combined with fast permeation rates. However, the membranes' use has been limited mostly to aqueous solutions because GO membranes appear to be impermeable to organic solvents, a phenomenon not fully understood yet. Here, we report efficient and fast filtration of organic solutions through GO laminates containing smooth two-dimensional (2D) capillaries made from flakes with large sizes of ~ 10-20 micron. Without sacrificing their sieving characteristics, such membranes can be made exceptionally thin, down to ~ 10 nm, which translates into fast permeation of not only water but also organic solvents. We attribute the organic solvent permeation and sieving properties of ultrathin GO laminates to the presence of randomly distributed pinholes that are interconnected by short graphene channels with a width of 1 nm. With increasing the membrane thickness, the organic solvent permeation rates decay exponentially but water continues to permeate fast, in agreement with previous reports. The application potential of our ultrathin laminates for organic-solvent nanofiltration is demonstrated by showing >99.9% rejection of various organic dyes with small molecular weights dissolved in methanol. Our work significantly expands possibilities for the use of GO membranes in purification, filtration and related technologies.

physics.app-ph↗

arXiv2017

Anisotropic features in the electronic structure of the two-dimensional transition metal trichalcogenide TiS$_3$: electron doping and plasmons

Analysis of the band structure of TiS$_3$ single-layers suggests the possibility of changing their physical behaviour by injecting electron carriers. The anisotropy of the valence and conduction bands is explained in terms of their complex orbital composition. The nature of the Fermi surface and Lindhard response function for different doping concentrations is studied by means of first-principles DFT calculations. It is suggested that for electron doping levels $x$ (number of electrons per unit cell) $\sim$ 0.18-0.30$e^-$ the system could exhibit incommensurate charge or spin modulations which, however, would keep the metallic state whereas systems doped with smaller $x$ would be 2D metals without any electronic instability. The effect of spin-orbit coupling in the band dispersion is analysed. The DFT effective masses are used to study the plasmon spectrum from an effective low energy model. We find that this material supports highly anisotropic plasmons, with opposite anisotropy for the electron and hole bands.

cond-mat.mtrl-sci↗

arXiv2017

Many-body effects in doped graphene on a piezoelectric substrate

We investigate the many-body properties of graphene on top of a piezoelectric substrate, focusing on the interaction between the graphene electrons and the piezoelectric acoustic phonons. We calculate the electron and phonon self-energies as well as the electron mobility limited by the substrate phonons. We emphasize the importance of the proper screening of the electron-phonon vertex and discuss the various limiting behaviors as a function of electron energy, temperature, and doping level. The effect on the graphene electrons of the piezoelectric acoustic phonons is compared with that of the intrinsic deformation acoustic phonons of graphene. Substrate phonons tend to dominate over intrinsic ones for low doping levels at high and low temperatures.

cond-mat.mes-hall↗

arXiv2017

Spin relaxation in corrugated graphene

In graphene, out-of-plane (flexural) vibrations and static ripples imposed by the substrate relax the electron spin, intrinsically protected by mirror symmetry. We calculate the relaxation times in different scenarios, accounting for all the possible spin-phonon couplings allowed by the hexagonal symmetry of the lattice. Scattering by flexural phonons imposes the ultimate bound to the spin lifetimes, in the ballpark of hundreds of nano-seconds at room temperature. This estimate and the behavior as a function of the carrier concentration are substantially altered by the presence of tensions or the pinning with the substrate. Static ripples also influence the spin transport in the diffusive regime, dominated by motional narrowing. We find that the D'yakonov-Perel' mechanism saturates when the mean free path is comparable to the correlation length of the heights profile. In this regime, the spin-relaxation times are exclusively determined by the geometry of the corrugations. Simple models for typical corrugations lead to lifetimes of the order of tens of micro-seconds.

cond-mat.mes-hall↗

arXiv2016

Quantum Spin Hall Effect in Twisted Bilayer Graphene

Motivated by a recent experiment (Sanchez-Yamagishi et.al, arXiv:1602.06815) reporting evidence of helical spin-polarized edge states in layer-biased twisted bilayer graphene under a magnetic flux, we study the possibility of stabilising a Quantum Spin Hall (QSH) phase in such a system, without Zeeman or spin-orbit couplings, and with a QSH gap induced instead by electronic interactions. We analyse how magnetic flux, electric field, interlayer rotation angle, and interactions (treated at a mean field level) combine to produce a pseudo-QSH with broken time-reversal symmetry, and spin-polarized helical edge states. The effect is a consequence of a robust interaction-induced ferrimagnetic ordering of the Quantum Hall ground state under an interlayer bias, provided the two rotated layers are effectively decoupled at low energies. We discuss in detail the electronic structure, and the constraints on system parameters, such as the angle, interactions and magnetic flux, required to reach the pseudo-QSH phase. We find, in particular, that purely local electronic interactions are not sufficient to account for the experimental observations, which demand at least nearest-neighbour interactions to be included.

cond-mat.mes-hall↗

arXiv2016

Graphene bubbles on a substrate : Universal shape and van der Waals pressure

Trapped substances between a 2D crystal, such as graphene, and an atomically flat substrate, for example, hexagonal boron nitride, give rise to the formation of bubbles. We show that the size, shape and internal pressure inside these bubbles are determined by the competition between van der Waals attraction of a 2D crystal to the substrate and the elastic energy needed to deform the atomically thin layer. This presents opportunities to use bubbles to study the elasticity of 2D materials as well as the conditions of confinement, yet none of these have been explored so far, either theoretically or experimentally. We have created a variety of bubbles formed by monolayers of graphene, hBN and MoS2 mechanically exfoliated onto hBN, graphite and MoS2 substrates. Their shapes, analyzed using atomic force microscopy, are found to exhibit universal scaling with well-defined aspect ratios, in agreement with theoretical analysis based on general properties of membranes. We also measured the pressure induced by the confinement, which increased with decreasing bubble's size and reached tens on MPa inside submicron bubbles. This agrees with our theory estimates and suggests that for bubbles with radii < 10 nm hydrostatic pressures can reach close to 1 GPa, which may modify the properties of a trapped material.

cond-mat.mes-hall↗