arXiv subjects

F. H. L. Koppens

Publications and source records attributed to F. H. L. Koppens.

At least 19 recordsLinked to original sources

arXiv2024

One-dimensional proximity superconductivity in the quantum Hall regime

Extensive efforts have been undertaken to combine superconductivity and the quantum Hall effect so that Cooper-pair transport between superconducting electrodes in Josephson junctions is mediated by one-dimensional edge states. This interest has been motivated by prospects of finding new physics, including topologically-protected quasiparticles, but also extends into metrology and device applications. So far it has proven challenging to achieve detectable supercurrents through quantum Hall conductors. Here we show that domain walls in minimally twisted bilayer graphene support exceptionally robust proximity superconductivity in the quantum Hall regime, allowing Josephson junctions to operate in fields close to the upper critical field of superconducting electrodes. The critical current is found to be non-oscillatory and practically unchanging over the entire range of quantizing fields, with its value being limited by the quantum conductance of ballistic, strictly one-dimensional electronic channels residing within the domain walls. The system described is unique in its ability to support Andreev bound states at quantizing fields and offers many interesting directions for further exploration.

cond-mat.mes-hall↗

arXiv2020

Single organic molecules for photonic quantum technologies

Isolating single molecules in the solid state has allowed fundamental experiments in basic and applied sciences. When cooled down to liquid helium temperature, certain molecules show transition lines, that are tens of megahertz wide, limited only by the excited state lifetime. The extreme flexibility in the synthesis of organic materials provides, at low costs, a wide palette of emission wavelengths and supporting matrices for such single chromophores. In the last decades, the controlled coupling to photonic structures has led to an optimized interaction efficiency with light. Molecules can hence be operated as single photon sources and as non-linear elements with competitive performance in terms of coherence, scalability and compatibility with diverse integrated platforms. Moreover, they can be used as transducers for the optical read-out of fields and material properties, with the promise of single-quanta resolution in the sensing of charges and motion. We show that quantum emitters based on single molecules hold promise to play a key role in the development of quantum science and technologies.

quant-ph↗

arXiv2020

Graphene-Quantum Dots Hybrid Photodetectors with Low Dark-Current Readout

Graphene-based photodetectors have shown responsivities up to 10$^8$A/W and photoconductive gains up to 10$^{8}$ electrons per photon. These photodetectors rely on a highly absorbing layer in close proximity of graphene, which induces a shift of the graphene chemical potential upon absorption, hence modifying its channel resistance. However, due to the semi-metallic nature of graphene, the readout requires dark currents of hundreds of $μ$A up to mA, leading to high power consumption needed for the device operation. Here we propose a novel approach for highly responsive graphene-based photodetectors with orders of magnitude lower dark current levels. A shift of the graphene chemical potential caused by light absorption in a layer of colloidal quantum dots, induces a variation of the current flowing across a metal-insulator-graphene diode structure. Owing to the low density of states of graphene near the neutrality point, the light-induced shift in chemical potential can be relatively large, dramatically changing the amount of current flowing across the insulating barrier, and giving rise to a novel type of gain mechanism. This readout requires dark currents of hundreds of nA up to few $μ$A, orders of magnitude lower than other graphene-based photodetectors, while keeping responsivities of $\sim$70A/W in the infrared, almost two orders of magnitude higher compared to established germanium on silicon and indium gallium arsenide infrared photodetectors. This makes the device appealing for applications where high responsivity and low power consumption are required.

physics.app-ph↗

arXiv2019

Graphene-Based Integrated Photonics For Next-Generation Datacom And Telecom

Graphene is an ideal material for optoelectronic applications. Its photonic properties give several advantages and complementarities over Si photonics. For example, graphene enables both electro-absorption and electro-refraction modulation with an electro-optical index change exceeding 10$^{-3}$. It can be used for optical add-drop multiplexing with voltage control, eliminating the current dissipation used for the thermal detuning of microresonators, and for thermoelectric-based ultrafast optical detectors that generate a voltage without transimpedance amplifiers. Here, we present our vision for grapheme-based integrated photonics. We review graphene-based transceivers and compare them with existing technologies. Strategies for improving power consumption, manufacturability and wafer-scale integration are addressed. We outline a roadmap of the technological requirements to meet the demands of the datacom and telecom markets. We show that graphene based integrated photonics could enable ultrahigh spatial bandwidth density , low power consumption for board connectivity and connectivity between data centres, access networks and metropolitan, core, regional and long-haul optical communications.

physics.app-ph↗

arXiv2019

High-mobility, wet-transferred graphene grown by chemical vapor deposition

We report high room-temperature mobility in single layer graphene grown by Chemical Vapor Deposition (CVD) after wet transfer on SiO$_2$ and hexagonal boron nitride (hBN) encapsulation. By removing contaminations trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to$\sim70000cm^2 V^{-1} s^{-1}$ at room temperature and$\sim120000cm^2 V^{-1} s^{-1}$ at 9K. These are over twice those of previous wet transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room temperature mobilities$\sim30000 cm^2 V^{-1} s^{-1}$. These results show that, with appropriate encapsulation and cleaning, room temperature mobilities well above $10000cm^2 V^{-1} s^{-1}$ can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach.

cond-mat.mes-hall↗

arXiv2017

The ultrafast dynamics and conductivity of photoexcited graphene at different Fermi energies

For many of the envisioned optoelectronic applications of graphene it is crucial to understand the sub-picosecond carrier dynamics immediately following photoexcitation, as well as the effect on the electrical conductivity - the photoconductivity. Whereas these topics have been studied using various ultrafast experiments and theoretical approaches, controversial and incomplete explanations have been put forward concerning the sign of the photoconductivity, the occurrence and significance of the creation of additional electron-hole pairs, and, in particular, how the relevant processes depend on Fermi energy. Here, we present a unified and intuitive physical picture of the ultrafast carrier dynamics and the photoconductivity, combining optical pump - terahertz probe measurements on a gate-tunable graphene device, with numerical calculations using the Boltzmann equation. We distinguish two types of ultrafast photo-induced carrier heating processes: At low (equilibrium) Fermi energy ($E_{\rm F} \lesssim$ 0.1 eV for our experiments) broadening of the carrier distribution involves interband transitions - interband heating. At higher Fermi energy ($E_{\rm F} \gtrsim$ 0.15 eV) broadening of the carrier distribution involves intraband transitions - intraband heating. Under certain conditions, additional electron-hole pairs can be created (carrier multiplication) for low $E_{\rm F}$, and hot carriers (hot-carrier multiplication) for higher $E_{\rm F}$. The resultant photoconductivity is positive (negative) for low (high) $E_{\rm F}$, which originates from the effect of the heated carrier distributions on the screening of impurities, consistent with the DC conductivity being mostly due to impurity scattering. The importance of these insights is highlighted by a discussion of the implications for graphene photodetector applications.

cond-mat.mes-hall↗

arXiv2017

Out-of-plane heat transfer in van der Waals stacks: electron-hyperbolic phonon coupling

Van der Waals heterostructures have emerged as promising building blocks that offer access to new physics, novel device functionalities, and superior electrical and optoelectronic properties. Applications such as thermal management, photodetection, light emission, data communication, high-speed electronics and light harvesting require a thorough understanding of (nanoscale) heat flow. Here, using time-resolved photocurrent measurements we identify an efficient out-of-plane energy transfer channel, where charge carriers in graphene couple to hyperbolic phonon polaritons in the encapsulating layered material. This hyperbolic cooling is particularly efficient, giving picosecond cooling times, for hexagonal BN, where the high-momentum hyperbolic phonon polaritons enable efficient near-field energy transfer. We study this heat transfer mechanism through distinct control knobs to vary carrier density and lattice temperature, and find excellent agreement with theory without any adjustable parameters. These insights may lead to the ability to control heat flow in van der Waals heterostructures.

cond-mat.mes-hall↗

arXiv2016

Graphene-based, mid-infrared, room-temperature pyroelectric bolometers with ultrahigh temperature coefficient of resistance

Graphene is ideally suited for photonic and optoelectronic applications, with a variety of photodetectors (PDs) in the visible, near-infrared (NIR), and THz reported to date, as well as thermal detectors in the mid-infrared (MIR). Here, we present a room temperature-MIR-PD where the pyroelectric response of a LiNbO3 crystal is transduced with high gain (up to 200) into resistivity modulation for graphene, leading to a temperature coefficient of resistance up to 900%/K, two orders of magnitude higher than the state of the art, for a device area of 300x300um2. This is achieved by fabricating a floating metallic structure that concentrates the charge generated by the pyroelectric substrate on the top-gate capacitor of the graphene channel. This allows us to resolve temperature variations down to 15umK at 1 Hz, paving the way for a new generation of detectors for MIR imaging and spectroscopy

physics.ins-det↗

arXiv2014

Hot-carrier photocurrent effects at graphene-metal interfaces

Photoexcitation of graphene leads to an interesting sequence of phenomena, some of which can be exploited in optoelectronic devices based on graphene. In particular, the efficient and ultrafast generation of an electron distribution with an elevated electron temperature and the concomitant generation of a photo-thermoelectric voltage at symmetry-breaking interfaces is of interest for photosensing and light harvesting. Here, we experimentally study the generated photocurrent at the graphene-metal interface, focusing on the time-resolved photocurrent, the effects of photon energy, Fermi energy and light polarization. We show that a single framework based on photo-thermoelectric photocurrent generation explains all experimental results.

cond-mat.mes-hall↗

arXiv2014

Electrical Control of Optical Emitter Relaxation Pathways enabled by Graphene

Controlling the energy flow processes and the associated energy relaxation rates of a light emitter is of high fundamental interest, and has many applications in the fields of quantum optics, photovoltaics, photodetection, biosensing and light emission. While advanced dielectric and metallic systems have been developed to tailor the interaction between an emitter and its environment, active control of the energy flow has remained challenging. Here, we demonstrate in-situ electrical control of the relaxation pathways of excited erbium ions, which emit light at the technologically relevant telecommunication wavelength of 1.5 $μ$m. By placing the erbium at a few nanometres distance from graphene, we modify the relaxation rate by more than a factor of three, and control whether the emitter decays into either electron-hole pairs, emitted photons or graphene near-infrared plasmons, confined to $<$15 nm to the sheet. These capabilities to dictate optical energy transfer processes through electrical control of the local density of optical states constitute a new paradigm for active (quantum) photonics.

cond-mat.mes-hall↗

arXiv2014

Single-photon nonlinear optics with graphene plasmons

We show that it is possible to realize significant nonlinear optical interactions at the few photon level in graphene nanostructures. Our approach takes advantage of the electric field enhancement associated with the strong confinement of graphene plasmons and the large intrinsic nonlinearity of graphene. Such a system could provide a powerful platform for quantum nonlinear optical control of light. As an example, we consider an integrated optical device that exploits this large nonlinearity to realize a single photon switch.

cond-mat.mes-hall↗

arXiv2013

Photo-excitation Cascade and Multiple Carrier Generation in Graphene

The conversion of light into free electron-hole pairs constitutes the key process in the fields of photodetection and photovoltaics. The efficiency of this process depends on the competition of different relaxation pathways and can be greatly enhanced when photoexcited carriers do not lose energy as heat, but instead transfer their excess energy into the production of additional electron-hole pairs via carrier-carrier scattering processes. Here we use Optical pump - Terahertz probe measurements to show that in graphene carrier-carrier scattering is unprecedentedly efficient and dominates the ultrafast energy relaxation of photoexcited carriers, prevailing over optical phonon emission in a wide range of photon wavelengths. Our results indicate that this leads to the production of secondary hot electrons, originating from the conduction band. Since hot electrons in graphene can drive currents, multiple hot carrier generation makes graphene a promising material for highly efficient broadband extraction of light energy into electronic degrees of freedom, enabling high-efficiency optoelectronic applications.

cond-mat.mes-hall↗

arXiv2013

Universal Distance-Scaling of Non-radiative Energy Transfer to Graphene

The near-field interaction between fluorescent emitters and graphene exhibits rich physics associated with local dipole-induced electromagnetic fields that are strongly enhanced due to the unique properties of graphene. Here, we measure emitter lifetimes as a function of emitter-graphene distance d, and find agreement with a universal scaling law, governed by the fine-structure constant. The observed energy transfer- rate is in agreement with a 1/d^4 dependence that is characteristic of 2D lossy media. The emitter decay rate is enhanced 90 times (transfer efficiency of ~99%) with respect to the decay in vacuum at distances d ~ 5 nm. This high energy-transfer rate is mainly due to the two-dimensionality and gapless character of the monoatomic carbon layer. Graphene is thus shown to be an extraordinary energy sink, holding great potential for photodetection, energy harvesting, and nanophotonics.

cond-mat.mes-hall↗

arXiv2011

Gate-activated photoresponse in a graphene p-n junction

We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed, allowing on-off control of photodetection. Photocurrents generated near p-n junctions do not require biasing and can be realized using submicron gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions.

cond-mat.mes-hall↗

arXiv2011

Nuclear Spin Dynamics in Double Quantum Dots: Fixed Points, Transients, and Intermittency

Transport through spin-blockaded quantum dots provides a means for electrical control and detection of nuclear spin dynamics in the host material. Although such experiments have become increasingly popular in recent years, interpretation of their results in terms of the underlying nuclear spin dynamics remains challenging. Here we point out a fundamental process in which nuclear spin dynamics can be driven by electron shot noise; fast electric current fluctuations generate much slower nuclear polarization dynamics, which in turn affect electron dynamics via the Overhauser field. The resulting extremely slow intermittent current fluctuations account for a variety of observed phenomena that were not previously understood.

cond-mat.mes-hall↗

arXiv2009

Multiple Nuclear Polarization States in a Double Quantum Dot

We observe multiple stable states of nuclear polarization in a double quantum dot under conditions of electron spin resonance. The stable states can be understood within an elaborated theoretical rate equation model for the polarization in each of the dots, in the limit of strong driving. This model also captures unusual features of the data, such as fast switching and a `wrong' sign of polarization. The results reported enable applications of this polarization effect, including manipulation and control of nuclear fields.

cond-mat.mes-hall↗

arXiv2009

Locking electron spins into magnetic resonance by electron-nuclear feedback

The main obstacle to coherent control of two-level quantum systems is their coupling to an uncontrolled environment. For electron spins in III-V quantum dots, the random environment is mostly given by the nuclear spins in the quantum dot host material; they collectively act on the electron spin through the hyperfine interaction, much like a random magnetic field. Here we show that the same hyperfine interaction can be harnessed such that partial control of the normally uncontrolled environment becomes possible. In particular, we observe that the electron spin resonance frequency remains locked to the frequency of an applied microwave magnetic field, even when the external magnetic field or the excitation frequency are changed. The nuclear field thereby adjusts itself such that the electron spin resonance condition remains satisfied. General theoretical arguments indicate that this spin resonance locking is accompanied by a significant reduction of the randomness in the nuclear field.

cond-mat.mes-hall↗

arXiv2008

Coherent control of a single electron spin with electric fields

Manipulation of single spins is essential for spin-based quantum information processing. Electrical control instead of magnetic control is particularly appealing for this purpose, since electric fields are easy to generate locally on-chip. We experimentally realize coherent control of a single electron spin in a quantum dot using an oscillating electric field generated by a local gate. The electric field induces coherent transitions (Rabi oscillations) between spin-up and spin-down with pi/2 rotations as fast as ~55ns. Our analysis indicates that the electrically-induced spin transitions are mediated by the spin-orbit interaction. Taken together with the recently demonstrated coherent exchange of two neighboring spins, our results demonstrate the feasibility of fully electrical manipulation of spin qubits.

cond-mat.mes-hall↗