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F. Jabeen

Publications and source records attributed to F. Jabeen.

3 recordsLinked to original sources

Spin-polarized lasing in a photonic lattice

We characterize spin-polarized lasing in a two-dimensional photonic lattice fabricated from a GaAs/InGaAs semiconductor microcavity sample. The lattice is defined by a staggered arrangement of rounded rectangular micrometric mesas that laterally confine and couple the optical modes. Polarization-, angle-, and energy-resolved micro-photoluminescence measurements reveal the transition from the strong-coupling regime to photon lasing, accompanied by extended spatial coherence across several lattice unit cells. Under circularly polarized nonresonant excitation, the emitted light acquires a controllable circular polarization whose handedness follows that of the pump. These results establish photonic-lattice VCSELs as a platform for spin-controlled coherent emission in extended optical systems.

physics.optics

Voltage control of the quantum scattering time in InAs/GaSb/InAs trilayer quantum wells

We study the evolution of the quantum scattering time by gate voltage training in the topological insulator based on InAs/GaSb/InAs trilayer quantum wells. Depending on the minimal gate voltage applied during a gate voltage sweep cycle, the quantum scattering time can be improved by 50 % from 0.08 ps to 0.12 ps albeit the transport scattering time is rather constant around 1.0 ps. The ratio of the quantum scattering time versus transport scattering time scales linearly with the charge carrier density and varies from 10 to 30, indicating Coulombic scattering as the dominant scattering mechanism. Our findings may enable to improve the residual bulk conductivity issue and help in observing helical edge channels in topological insulators based on InAs/GaSb quantum well heterostructures even for macroscopic devices.

cond-mat.mes-hall

The Mn site in Mn-doped Ga-As nanowires: an EXAFS study

We present an EXAFS study of the Mn atomic environment in Mn-doped GaAs nanowires. Mn doping has been obtained either via the diffusion of the Mn used as seed for the nanowire growth or by providing Mn during the growth of Au-induced wires. As a general finding, we observe that Mn forms chemical bonds with As but is not incorporated in a substitutional site. In Mn-induced GaAs wires, Mn is mostly found bonded to As in a rather disordered environment and with a stretched bond length, reminiscent of that exhibited by MnAs phases. In Au-seeded nanowires, along with stretched Mn-As coordination we have found the presence of Mn in a Mn-Au intermetallic compound.

cond-mat.mtrl-sci