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F. Lüpke

Publications and source records attributed to F. Lüpke.

3 recordsLinked to original sources

Spatial homogeneity of superconducting order parameter in NbN films grown by atomic layer deposition

Due to their high kinetic inductance, highly disordered superconducting thin films are a potential hardware for the realization of compact, low-noise elements in cryoelectronic applications. However, high disorder typically results in structural defects that cause spatial inhomogeneity of the superconducting order parameter, thereby impairing the film's properties. Here, we employ scanning tunneling microscopy to demonstrate that NbN thin films fabricated by plasma-enhanced atomic layer deposition (PE-ALD) exhibit unusual spatial homogeneity, even at thicknesses approaching the superconductor-insulator transition. Tunneling spectra acquired across the sample surface show only small variations of the order parameter with a standard deviation of 2-3%, on length scales that significantly exceed the film's grain size. At the same time, the films achieve a relatively high sheet resistance (up to 1400 Ohm) and, consequently, a high sheet kinetic inductance (up to approximately 200 pH), making them well-suited for applications.

cond-mat.supr-con

Four-point probe measurements using current probes with voltage feedback to measure electric potentials

We present a four-point probe resistance measurement technique which uses four equivalent current measuring units, resulting in minimal hardware requirements and corresponding sources of noise. Local sample potentials are measured by a software feedback loop which adjusts the corresponding tip voltage such that no current flows to the sample. The resulting tip voltage is then equivalent to the sample potential at the tip position. We implement this measurement method into a multi-tip scanning tunneling microscope setup such that potentials can also be measured in tunneling contact, allowing in principle truly non-invasive four-probe measurements. The resulting measurement capabilities are demonstrated for BiSbTe$_3$ and Si$(111)-(7\times7)$ samples.

physics.ins-det

Scanning tunneling potentiometry implemented into a multi-tip setup by software

We present a multi-tip scanning tunneling potentiometry technique that can be implemented into existing multi-tip scanning tunneling microscopes without hardware changes. The resulting setup allows flexible in situ contacting of samples under UHV conditions and subsequent measurement of the sample topography and local electric potential with resolution down to Å and μV, respectively. The performance of the potentiometry feedback is demonstrated by thermovoltage measurements on the Ag/Si$(111)-(\sqrt3\times\sqrt3)\rm R30^{\circ}$ surface by resolving a standing wave pattern. Subsequently, the ability to map the local transport field as a result of a lateral current through the sample surface is shown on Ag/Si$(111)-(\sqrt3\times\sqrt3)\rm R30^{\circ}$ and Si$(111)-(7\times7)$ surfaces.

cond-mat.mes-hall