arXiv subjects

F. Lefloch

Publications and source records attributed to F. Lefloch.

At least 19 recordsLinked to original sources

arXiv2026

Coherence Limits in Interference-Based cos(2$\varphi$) Qubits

We investigate the coherence properties of parity-protected $\cos(2\varphi)$ qubits based on interferences between two Josephson elements in a superconducting loop. We show that qubit implementations of a $\cos(2\varphi)$ potential using a single loop, such as those employing semiconducting junctions, rhombus circuits, flowermon and KITE structures, can be described by the same Hamiltonian as two multi-harmonic Josephson junctions in a SQUID geometry. We find that, despite the parity protection arising from the suppression of single Cooper pair tunneling, there exists a fundamental trade-off between charge and flux noise dephasing channels. Using numerical simulations, we examine how relaxation and dephasing rates depend on external flux and circuit parameters, and we identify the best compromise for maximum coherence. With currently existing circuit parameters, the qubit lifetime $T_1$ can exceed milliseconds while the dephasing time $T_\varphi$ remains limited to only a few microseconds due to either flux or charge noise. Our findings establish practical limits on the coherence of this class of qubits and raise questions about the long-term potential of this approach.

quant-ph↗

arXiv2024

Nanosecond Laser Annealing: impact on superconducting Silicon on Insulator epilayers

We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\, at/cm^2$, 3 keV). Superconductivity is discussed in relation to the structural, electrical and material properties, a step towards the integration of ultra-doped superconducting Si at large scale. In particular, we highlight the effect of the nanosecond laser annealing energy and the impact of multiple laser anneals. Increasing the energy leads to a linear increase of the layer thickness, and to the increase of the superconducting critical temperature $T_c$ from zero ($<35\, mK$) to $0.5\,K$. This value is comparable to superconducting Si layers realised by Gas Immersion Laser Doping where the dopants are incorporated without introducing the deep defects associated to implantation. Superconductivity only appears when the annealed depth is larger than the initial amorphous layer induced by the boron implantation. The number of subsequent anneals results in a more homogeneous doping with reduced amount of structural defects and increased conductivity. The quantitative analysis of $T_c$ concludes on a superconducting/ non superconducting bilayer, with an extremely low resistance interface. This highlights the possibility to couple efficiently superconducting Si to Si channels.

cond-mat.supr-con↗

arXiv2017

Epitaxial electrical contact to graphene on SiC

Establishing good electrical contacts to nanoscale devices is a major issue for modern technology and contacting 2D materials is no exception to the rule. One-dimensional edge-contacts to graphene were recently shown to outperform surface contacts but the method remains difficult to scale up. We report a resist-free and scalable method to fabricate few graphene layers with electrical contacts in a single growth step. This method derives from the discovery reported here of the growth of few graphene layers on a metallic carbide by thermal annealing of a carbide forming metallic film on SiC in high vacuum. We exploit the combined effect of edge-contact and partially-covalent surface epitaxy between graphene and the metallic carbide to fabricate devices in which low contact-resistance and Josephson effect are observed. Implementing this approach could significantly simplify the realization of large-scale graphene circuits.

physics.app-ph↗

arXiv2016

All silicon Josephson junctions

We have realised laser-doped all-silicon superconducting (S)/ normal metal (N) bilayers of tunable thickness and dopant concentration. We observed a strong reduction of the bilayers critical temperature when increasing the normal metal thickness, a signature of the highly transparent S/N interface associated to the epitaxial sharp laser doping profile. We extracted the interface resistance by fitting with the linearised Usadel equations, demonstrating a reduction of one order of magnitude from previous superconductor/doped Si interfaces. In this well controlled crystalline system we exploited the low resistance S/N interfaces to elaborate all-silicon lateral SNS Josephson junctions with long range proximity effect. Their dc transport properties, such as the critical and retrapping currents, could be well understood in the diffusive regime. Furthermore, this work lead to the estimation of important parameters in ultra-doped superconducting Si, such as the Fermi velocity, the coherence length, or the electron-phonon coupling constant, fundamental to conceive an all-silicon superconducting electronics.

cond-mat.mes-hall↗

arXiv2014

D.C. Josephson transport by quartets and other Andreev resonances in superconducting bijunctions

Bijunctions are three-terminal Josephson junctions where three superconductors are connected by a single weak link made of a metallic region or of quantum dots. Biasing two of the superconductors with commensurate voltages yields Andreev resonances that produce d.c. Josephson currents made of correlated Cooper pairs. For instance with applied voltages (0, V,-V), quartets formed by two entangled Cooper pairs are emitted by one reservoir towards the two others. Theory involving non-equilibrium Green's functions reveal the microsopic mechanism at play, e.g. multiple coherent Andreev reflections that provide an energy-conserving and fully coherent channel. Recent experiments on diffusive Aluminum-Copper bijunctions show transport anomalies that are interpreted in terms of quartet resonances.

cond-mat.mes-hall↗

arXiv2012

SQUIDs based set-up for probing current noise and correlations in three-terminal devices

We have implemented a new experimental set-up for precise measurements of current fluctuations in three-terminal devices. The system operates at very low temperatures (30 mK) and is equipped with three SQUIDs as low noise current amplifiers. A SQUID input coil is connected to each terminal of a sample allowing the acquisition of time-dependent current everywhere in the circuit. From these traces, we can measure the current mean value, the noise and cross-correlations between different branches of a device. In this paper we present calibration results of noise and cross-correlations obtained using low impedance macroscopic resistors. From these results we can extract the noise level of the set-up and show that there are no intrinsic correlations due to the measurement scheme. We also studied noise and correlations as a function of a DC current and estimated the electronic temperature of various macroscopic resistors.

cond-mat.mes-hall↗

arXiv2011

Noise Correlations in Three-Terminal Diffusive Superconductor-Normal Metal-Superconductor Nanostructures

We present measurements of current noise and cross-correlations in three-terminal Superconductor-Normal metal-Superconductor (S-N-S) nanostructures that are potential solid-state entanglers thanks to Andreev reflections at the N-S interfaces. The noise correlation measurements spanned from the regime where electron-electron interactions are relevant to the regime of Incoherent Multiple Andreev Reflection (IMAR). In the latter regime, negative cross-correlations are observed in samples with closely-spaced junctions.

cond-mat.mes-hall↗

arXiv2010

Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon

The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here we report the confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductorsemiconductor devices, such as resonant supercurrent transistors, when the dot is strongly coupled to the electrodes. Charge transport measurements on weakly coupled quantum dots reveal discrete energy spectra, with the confined hole states displaying anisotropic gyromagnetic factors and strong spin-orbit coupling strength with pronounced gate-voltage and magnetic-field dependence.

cond-mat.mes-hall↗

arXiv2005

Ballistic effects in a proximity induced superconducting diffusive metal

Using a Scanning Tunneling Microscope (STM), we investigate the Local Density of States (LDOS) of artificially fabricated normal metal nano-structures in contact with a superconductor. Very low temperature local spectroscopic measurements (100 mK) reveal the presence of well defined subgap peaks at energy |E|<Delta in the LDOS at various positions of the STM tip. Although no clear correlations between the LDOS and the shape of the samples have emerged, some of the peak features suggest they originate from quasi-particle bound states within the normal metal structures (De Gennes St James states). Refocusing of electronic trajectories induced by the granular srtucture of the samples can explain the observation of spatially uncorrelated interference effects in a non-ballistic medium.

cond-mat.mes-hall↗

arXiv2005

Scanning Tunneling Spectroscopy of the superconducting proximity effect in a diluted ferromagnetic alloy

We studied the proximity effect between a superconductor (Nb) and a diluted ferromagnetic alloy (CuNi) in a bilayer geometry. We measured the local density of states on top of the ferromagnetic layer, which thickness varies on each sample, with a very low temperature Scanning Tunneling Microscope. The measured spectra display a very high homogeneity. The analysis of the experimental data shows the need to take into account an additional scattering mechanism. By including in the Usadel equations the effect of the spin relaxation in the ferromagnetic alloy, we obtain a good description of the experimental data.

cond-mat.mes-hall↗

arXiv2004

Mesoscopic transition in the shot noise of diffusive S/N/S junctions

We experimentally investigated the current noise in diffusive Superconductor/Normal metal/Superconductor junctions with lengths between the superconducting coherence length xi_Delta and the phase coherence length L_Phi of the normal metal (xi_Delta < L < L_Phi). We measured the shot noise over a large range of energy covering both the regimes of coherent and incoherent multiple Andreev reflections. The transition between these two regimes occurs at the Thouless energy where a pronounced minimum in the current noise density is observed. Above the Thouless energy, in the regime of incoherent multiple Andreev reflections, the noise is strongly enhanced compared to a normal junction and grows linearly with the bias voltage. Semi-classical theory describes the experimental results accurately, when taking into account the voltage dependence of the resistance which reflects the proximity effect. Below the Thouless energy, the shot noise diverges with decreasing voltage which may indicate the coherent transfer of multiple charges.

cond-mat.mes-hall↗

arXiv2004

Half-integer Shapiro steps at the 0-pi crossover of a ferromagnetic Josephson junction

We investigate the current-phase relation of S/F/S junctions near the crossover between the 0 and the pi ground states. We use Nb/CuNi/Nb junctions where this crossover is driven both by thickness and temperature. For a certain thickness a non-zero minimum of critical current is observed at the crossover temperature. We analyze this residual supercurrent by applying a high frequency excitation and observe the formation of half-integer Shapiro steps. We attribute these fractional steps to a doubling of the Josephson frequency due to a sin(2*phi) current-phase relation. This phase dependence is explained by the splitting of the energy levels in the ferromagnetic exchange field.

cond-mat.supr-con↗

arXiv2003

Doubled Full Shot Noise in Quantum Coherent Superconductor - Semiconductor Junctions

We performed low temperature shot noise measurements in Superconductor (TiN) - strongly disordered normal metal (heavily doped Si) weakly transparent junctions. We show that the conductance has a maximum due to coherent multiple reflections at low energy and that shot noise is then twice the Poisson noise (S=4eI). The shot noise changes to the normal value (S=2eI) due to a large quasiparticle contribution.

cond-mat.mes-hall↗

arXiv2002

Inelastic relaxation and noise temperature in S/N/S junctions

We studied electronic relaxation in long diffusive superconductor / normal metal / superconductor (S/N/S) junctions by means of current noise and transport measurements down to very low temperature (100mK). Samples with normal metal lengths of 4, 10 and 60 micrometer have been investigated. In all samples the shot noise increases very rapidly with the voltage. This is interpreted in terms of enhanced heating of the electron gas confined between the two S/N interfaces. Experimental results are analyzed quantitatively taking into account electron-phonon interaction and heat transfer through the S/N interfaces. Transport measurements reveal that in all samples the two S/N interfaces are connected incoherently, as shown by the reentrance of the resistance at low temperature. The complementarity of noise and transport measurements allows us to show that the energy dependence of the reentrance at low voltage is essentially due to the increasing effective temperature of the quasiparticles in the normal metal.

cond-mat.mes-hall↗

arXiv2002

Mesoscopic proximity effect in double barrier Superconductor/Normal Metal junctions

We report transport measurements down to T=60mK of SININ and SNIN structures in the diffusive limit. We fabricated Al-AlOx/Cu/AlOx/Cu (SININ) and Al/Cu/AlOx/Cu (SNIN) vertical junctions. For the first time, a zero bias anomaly was observed in a metallic SININ structure. We attribute this peak of conductance to coherent multi-reflections of electrons between the two tunnel barriers. This conductance maximum is quantitatively fitted by the relevant theory of mesoscopic SININ structures. When the barrier at the SN interface is removed (SNIN structure), we observe a peak of conductance at finite voltage accompagnied by an excess of sub-gap conductance.

cond-mat.mes-hall↗

arXiv2000

Proximity effect in planar TiN-Silicon junctions

We measured the low temperature subgap resistance of titanium nitride (superconductor, Tc=4.6K)/highly doped silicon (degenerated semiconductor) SIN junctions, where I stands for the Schottky barrier. At low energies, the subgap conductance is enhanced due to coherent backscattering of the electrons towards the interface by disorder in the silicon (''reflectionless tunneling''). This Zero Bias Anomaly (ZBA) is destroyed by the temperature or the magnetic field above 250mK or 0.04T respectively. The overall differential resistance behavior (vs temperature and voltage) is compared to existing theories and values for the depairing rate and the barrier transmittance are extracted. Such an analysis leads us to introduce an effective temperature for the electrons and to discuss heat dissipation through the SIN interface.

cond-mat.mes-hall↗

arXiv2000

Spatially resolved spectroscopy on a superconducting proximity structure

We investigated the local density of states (LDOS) of a normal metal (N) in good electrical contact with a superconductor (S) as a function of the distance $x$ to the NS interface. The sample consists of a pattern of alternate stripes of Au and Nb made by UV-lithography. We used a low temperature scanning tunneling microscope to record simultaneously $dI/dV(V,x)$ curves and the topographic profile $z(x)$. Nearby the NS interface, all the spectra show a dip near the Fermi energy but depending on the geometry, different behaviours can be distinguished. First, when the characteristic size of the normal metal $L$ is much larger than the coherence length $ξ_N \simeq \sqrt{\hbar D_N/ 2Δ}$, the spectral extension of the dip decreases from $Δ$ at the NS interface to zero at distances $x\ggξ_N$. Second, when $L$ is comparable to $ξ_N$ the apparent gap in the LDOS is space-independent and related to the Thouless energy.

cond-mat.mes-hall↗

arXiv1999

Proximity effect in planar Superconductor/Semiconductor junction

We have measured the very low temperature (down to 30 mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6 K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer stands for the Schottky barrier). As the temperature is lowered, the resistance increases as expected in SIN junction. Around 300 mK, the resistance shows a maximum and decreases at lower temperature. This observed behavior is due to coherent backscattering towards the interface by disorder in Silicon ("Reflectionless tunneling"). This effect is also observed in the voltage dependence of the resistance (Zero Bias Anomaly) at low temperature (T<300 mK). The overall resistance behavior (in both its temperature and voltage dependence) is compared to existing theories and values for the depairing rate, the barrier resistance and the effective carrier temperature are extracted.

cond-mat.mes-hall↗