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F. Lugiez

Publications and source records attributed to F. Lugiez.

2 recordsLinked to original sources

Development of a modular CdTe detector plane for gamma-ray burst detection below 100 keV

We report on the development of an innovative CdTe detector plane (DPIX) optimized for the detection and localization of gamma-ray bursts in the X-ray band (below 100 keV). DPIX is part of an R&D program funded by the French Space Agency (CNES). DPIX builds upon the heritage of the ISGRI instrument, currently operating with great success on the ESA INTEGRAL mission. DPIX is an assembly of 200 elementary modules (XRDPIX) equipped with 32 CdTe Schottky detectors (4x4 mm2, 1 mm thickness) produced by ACRORAD Co. LTD. in Japan. These detectors offer good energy response up to 100 keV. Each XRDPIX is readout by the very low noise front-end electronics chip IDeF-X, currently under development at CEA/DSM/DAPNIA. In this paper, we describe the design of XRDPIX, the main features of the IDeF-X chip, and will present preliminary results of the reading out of one CdTe Schottky detector by the IDeF-X V1.0 chip. A low-energy threshold around 2.7 keV has been measured. This is to be compared with the 12-15 keV threshold of the ISGRI-INTEGRAL and BAT-SWIFT instruments, which both use similar detector material.

astro-ph

IDeF-X ASIC for Cd(Zn)Te spectro-imaging systems

Joint progresses in Cd(Zn)Te detectors, microelectronics and interconnection technologies open the way for a new generation of instruments for physics and astrophysics applications in the energy range from 1 to 1000 keV. Even working between -20 and 20 degrees Celsius, these instruments will offer high spatial resolution (pixel size ranging from 300 x 300 square micrometers to few square millimeters), high spectral response and high detection efficiency. To reach these goals, reliable, highly integrated, low noise and low power consumption electronics is mandatory. Our group is currently developing a new ASIC detector front-end named IDeF-X, for modular spectro-imaging system based on the use of Cd(Zn)Te detectors. We present here the first version of IDeF-X which consists in a set of ten low noise charge sensitive preamplifiers (CSA). It has been processed with the standard AMS 0.35 micrometer CMOS technology. The CSA are designed to be DC coupled to detectors having a low dark current at room temperature. The various preamps implemented are optimized for detector capacitances ranging from 0.5 up to 30 pF.

physics.ins-det