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F. Mazzola

Publications and source records attributed to F. Mazzola.

23 records · Page 2Linked to original sources

Simultaneous conduction and valence band quantisation in ultra-shallow, high density doping profiles in semiconductors

We demonstrate simultaneous quantisation of conduction band (CB) and valence band (VB) states in silicon using ultra-shallow, high density, phosphorus doping profiles (so-called Si:P $δ$-layers). We show that, in addition to the well known quantisation of CB states within the dopant plane, the confinement of VB-derived states between the sub-surface P dopant layer and the Si surface gives rise to a simultaneous quantisation of VB states in this narrow region. We also show that the VB quantisation can be explained using a simple particle-in-a-box model, and that the number and energy separation of the quantised VB states depend on the depth of the P dopant layer beneath the Si surface. Since the quantised CB states do not show a strong dependence on the dopant depth (but rather on the dopant density), it is straightforward to exhibit control over the properties of the quantised CB and VB states independently of each other by choosing the dopant density and depth accordingly, thus offering new possibilities for engineering quantum matter.

cond-mat.mtrl-sci↗

Itinerant ferromagnetism of the Pd-terminated polar surface of PdCoO$_2$

We study the electronic structure of the Pd-terminated surface of the non-magnetic delafossite oxide metal PdCoO$_2$. Combining angle-resolved photoemission spectroscopy and density-functional theory, we show how an electronic reconstruction driven by surface polarity mediates a Stoner-like magnetic instability towards itinerant surface ferromagnetism. Our results reveal how this leads to a rich multi-band surface electronic structure, and provide spectroscopic evidence for an intriguing sample-dependent coupling of the surface electrons to a bosonic mode which we attribute to electron-magnon interactions. Moreover, we find similar surface state dispersions in PdCrO$_2$, suggesting surface ferromagnetism persists in this sister compound despite its bulk antiferromagnetic order.

cond-mat.str-el↗

Maximal Rashba-like spin splitting via kinetic energy-driven inversion symmetry breaking

Engineering and enhancing inversion symmetry breaking in solids is a major goal in condensed matter physics and materials science, as a route to advancing new physics and applications ranging from improved ferroelectrics for memory devices to materials hosting Majorana zero modes for quantum computing. Here, we uncover a new mechanism for realising a much larger energy scale of inversion symmetry breaking at surfaces and interfaces than is typically achieved. The key ingredient is a pronounced asymmetry of surface hopping energies, i.e. a kinetic energy-driven inversion symmetry breaking, whose energy scale is pinned at a significant fraction of the bandwidth. We show, from spin- and angle-resolved photoemission, how this enables surface states of 3d and 4d-based transition-metal oxides to surprisingly develop some of the largest Rashba-like spin splittings that are known. Our findings open new possibilities to produce spin textured states in oxides which exploit the full potential of the bare atomic spin-orbit coupling, raising exciting prospects for oxide spintronics. More generally, the core structural building blocks which enable this are common to numerous materials, providing the prospect of enhanced inversion symmetry breaking at judiciously-chosen surfaces of a plethora of compounds, and suggesting routes to interfacial control of inversion symmetry breaking in designer heterostructures.

cond-mat.str-el↗

Spin-valley locking in the normal state of a transition-metal dichalocogenide superconductor

The metallic transition-metal dichalcogenides (TMDCs) are benchmark systems for studying and controlling intertwined electronic orders in solids, with superconductivity developing upon cooling from a charge density wave state. The interplay between such phases is thought to play a critical role in the unconventional superconductivity of cuprates, Fe-based, and heavy-fermion systems, yet even for the more moderately-correlated TMDCs, their nature and origins have proved highly controversial. Here, we study a prototypical example, $2H$-NbSe$_2$, by spin- and angle-resolved photoemission and first-principles theory. We find that the normal state, from which its hallmark collective phases emerge, is characterised by quasiparticles whose spin is locked to their valley pseudospin. This results from a combination of strong spin-orbit interactions and local inversion symmetry breaking. Non-negligible interlayer coupling further drives a rich three-dimensional momentum-dependence of the underlying Fermi surface spin texture. Together, these findings necessitate a fundamental re-investigation of the nature of charge order and superconducting pairing in NbSe$_2$ and related TMDCs.

cond-mat.supr-con↗

Direct observation of spin-polarised bulk bands in an inversion-symmetric semiconductor

Methods to generate spin-polarised electronic states in non-magnetic solids are strongly desired to enable all-electrical manipulation of electron spins for new quantum devices. This is generally accepted to require breaking global structural inversion symmetry. In contrast, here we present direct evidence from spin- and angle-resolved photoemission spectroscopy for a strong spin polarisation of bulk states in the centrosymmetric transition-metal dichalcogenide WSe$_2$. We show how this arises due to a lack of inversion symmetry in constituent structural units of the bulk crystal where the electronic states are localised, leading to enormous spin splittings up to $\sim\!0.5$ eV, with a spin texture that is strongly modulated in both real and momentum space. As well as providing the first experimental evidence for a recently-predicted `hidden' spin polarisation in inversion-symmetric materials, our study sheds new light on a putative spin-valley coupling in transition-metal dichalcogenides, of key importance for using these compounds in proposed valleytronic devices.

cond-mat.mtrl-sci↗