arXiv subjects

F. Munnik

Publications and source records attributed to F. Munnik.

7 recordsLinked to original sources

arXiv2026

Physics-Constrained Inverse Estimation of Irradiation-Induced Strain in He-H Ion-Implanted 4H-SiC Using Nanoindentation and Finite Element Modeling

Nanoindentation is widely used to evaluate the mechanical properties of irradiated materials however its potential for quantifying irradiation induced subsurface strain remains underexplored. In this work, an integrated experimental numerical framework based on a physics constrained inverse modeling approach is employed to estimate the magnitude of a depth dependent irradiation induced strain distribution in single crystal 4H SiC following sequential He and H ion implantation. The approach combines depth sensing nanoindentation, finite element modeling FEM, and a simplex based inverse optimization routine to calibrate a physically motivated eigenstrain profile derived from ion damage simulations. The strain field is assumed to follow a lognormal distribution consistent with independently determined damage profiles SRIM, and is implemented in the FEM model through a depth dependent thermal expansion formulation. By minimizing the squared error between simulated and experimental force displacement curves, the peak tensile strain is estimated to be 0.91, accompanied by an effective Young s modulus of 310 GPa and a yield strength of 16.4 GPa. Independent validation using nano beam precession electron diffraction N PED confirms good agreement between the reconstructed and experimentally measured out of plane strain profiles in both magnitude and spatial distribution. The results demonstrate that nanoindentation, when combined with physics based inverse modeling, can provide a practical tool for quantifying irradiation-induced strain and residual stress in nuclear ceramics. This methodology offers a complementary approach to diffraction based techniques for assessing subsurface damage in ion irradiated materials relevant to advanced nuclear systems.

physics.app-ph↗

arXiv2026

Molecular Nitrogen Formation in Nitrogen-Implanted (100) $\beta-Ga_2O_3$ Revealed by Temperature-Dependent $N$ $K$-edge XANES

The realization of $p$-type doping in wide-band-gap oxide semiconductors remains a major challenge, particularly in $\beta-Ga_2O_3$ where nitrogen has long been considered a potential acceptor dopant but has consistently failed to produce hole conductivity. Here we investigate the microscopic configuration of implanted nitrogen in (100) $\beta-Ga_2O_3$ using temperature-dependent $N$ $K$-edge x-ray absorption spectroscopy. The spectra reveal a pronounced $\pi^*$ resonance characteristic of molecular nitrogen, which becomes increasingly dominant upon thermal annealing. First-principles calculations and multiple-scattering simulations reveal a pronounced tendency for nitrogen atoms to form $N-N$ bonded configurations in the $Ga_2O_3$ matrix, particularly in defect-rich environments created by ion implantation, reproducing the characteristic spectral features observed in the $N$ $K$-edge XANES spectra. Structural analysis further indicates that implantation induces a defect-rich near-surface layer with local $\beta$-to-$\gamma$-like structural motifs, highlighting the strongly nonequilibrium structural environment in which nitrogen incorporation occurs. Reported results show that implanted nitrogen preferentially forms molecular $N_2$-like configurations rather than substitutional acceptors. Our results provide a microscopic explanation for the long-standing failure of nitrogen acceptor doping in $\beta-Ga_2O_3$ and reveal dopant molecularization as a previously overlooked pathway for impurity incorporation under strongly nonequilibrium implantation conditions.

cond-mat.mtrl-sci↗

arXiv2021

Experimental electronic stopping cross section of tungsten for light ions in a large energy interval

Electronic stopping cross section of tungsten for light ions was experimentally measured in a wide energy interval (20 to 6000 keV for protons and 50 to 9000 keV for helium) in backscattering and transmission geometries. The measurements were carried out in three laboratories (Austria, Germany and Sweden) using five different set-ups, the stopping data deduced from different data sets showed excellent agreement amongst each other, with total uncertainty varying within 1.5 - 3.8\% for protons and 2.2 - 5.5\% for helium, averaged over the respective energy range of each data set. The final data is compared to available data and to widely adopted semi-empirical and theoretical approaches, and found to be in good agreement with most adopted models at energies around and above the stopping maximum. Most importantly, our results extend the energy regime towards lower energies, and are thus of high technological relevance, e.g., in fusion research. At these low energies, our findings also revealed that tungsten - featured with fully and partially occupied f- and d-subshells, respectively, can be modeled as an electron gas for the energy loss process.

nucl-ex↗

arXiv2017

Astrophysical S-factor of the $^{14}\textrm{N(p,}γ\textrm{)}^{15}\textrm{O}$ reaction at 0.4 -- 1.3\,MeV

The $^{14}\textrm{N(p,}γ\textrm{)}^{15}\textrm{O}$ reaction is the slowest reaction of the carbon-nitrogen cycle of hydrogen burning and thus determines its rate. The precise knowledge of its rate is required to correctly model hydrogen burning in asymptotic giant branch stars. In addition, it is a necessary ingredient for a possible solution of the solar abundance problem by using the solar $^{13}$N and $^{15}$O neutrino fluxes as probes of the carbon and nitrogen abundances in the solar core. After the downward revision of its cross section due to a much lower contribution by one particular transition, capture to the ground state in $^{15}$O, the evaluated total uncertainty is still 8\%, in part due to an unsatisfactory knowledge of the excitation function over a wide energy range. The present work reports precise S-factor data at twelve energies between 0.357-1.292~MeV for the strongest transition, capture to the 6.79~MeV excited state in $^{15}$O, and at ten energies between 0.479-1.202~MeV for the second strongest transition, capture to the ground state in $^{15}$O. An R-matrix fit is performed to estimate the impact of the new data on astrophysical energies. The recently suggested slight enhancement of the 6.79~MeV transition at low energy could not be confirmed. The present extrapolated zero-energy S-factors are $S_{6.79}(0)$~=~1.24$\pm$0.11~keV~barn and $S_{\rm GS}(0)$~=~0.19$\pm$0.05~keV~barn.

nucl-ex↗

arXiv2015

High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films

We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1-xMnxAs epilayer depends on the Mn concentration x, reaching 82 K for x=0.105. The substitution of Mn ions at the Indium sites induces a compressive strain perpendicular to the InMnAs layer and a tensile strain along the in-plane direction. This gives rise to a large perpendicular magnetic anisotropy, which is often needed for the demonstration of electrical control of magnetization and for spin-transfer-torque induced magnetization reversal.

cond-mat.mtrl-sci↗

arXiv2015

Carbon p Electron Ferromagnetism in Silicon Carbide

Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic, electronic origin.

cond-mat.mtrl-sci↗

arXiv2009

Room temperature ferromagnetic-like behavior in Mn-implanted and post-annealed InAs layers deposited by Molecular Beam Epitaxy

We report on the magnetic and structural properties of Ar and Mn implanted InAs epitaxial films grown on GaAs (100) by Molecular Beam Epitaxy (MBE) and the effect of Rapid Thermal Annealing (RTA) for 30 seconds at 750C. Channeling Particle Induced X- ray Emission (PIXE) experiments reveal that after Mn implantation almost all Mn atoms are subsbtitutional in the In-site of the InAs lattice, like in a diluted magnetic semiconductor (DMS). All of these samples show diamagnetic behavior. But, after RTA treatment the Mn-InAs films exhibit room-temperature magnetism. According to PIXE measurements the Mn atoms are no longer substitutional. When the same set of experiments were performed with As as implantation ion all of the layers present diamagnetism without exception. This indicates that the appearance of room-temperature ferromagnetic-like behavior in the Mn-InAs-RTA layer is not related to lattice disorder produce during implantation, but to a Mn reaction produced after a short thermal treatment. X-ray diffraction patterns (XRD) and Rutherford Back Scattering (RBS) measurements evidence the segregation of an oxygen deficient-MnO2 phase (nominally MnO1.94) in the Mn-InAs-RTA epitaxial layers which might be on the origin of room temperature ferromagnetic-like response observed.

cond-mat.mtrl-sci↗