arXiv subjects

F. Nisa Bostanci

Publications and source records attributed to F. Nisa Bostanci.

18 recordsLinked to original sources

arXiv2026

CertiFlash: A Formal Verification Framework for Flash Translation Layers in Computational Solid State Drives

Data-intensive applications move large amounts of data from storage to the compute unit, incurring significant data movement overhead. Storage-centric computing reduces this overhead by moving computation near or inside solid-state drives (SSDs). Enabling it requires modifying SSD policies, e.g., address translation and garbage collection, which are part of the Flash Translation Layer (FTL), the SSD's firmware. Modifying the FTL is error-prone. Because FTL logic has direct access to security-critical device components, even a functionally correct FTL can leak data between tenants, drop integrity tags, or assign a flash block to the wrong tenant. We show that a faulty FTL can corrupt the device state at five surfaces inside the SSD, and demonstrate them on a DaisyPlus OpenSSD. Prior work verifies individual FTL designs, but has two limitations. (1) It establishes only functional correctness, so a modified FTL can violate isolation, integrity, and ownership and still pass verification. (2) It is tied to a single FTL design, so every modification requires redoing every proof. We propose CertiFlash, a formal verification framework for FTLs, mechanized in the Rocq proof assistant, that gives designers a machine-checked proof of security and correctness. CertiFlash models an FTL as a deterministic state machine with a single global invariant over mapping, isolation, integrity, ownership, and allocation. We prove once, over a general FTL model, that (i) every FTL operation preserves the invariant and (ii) the model refines an idealized block device. For a new design, a designer discharges five hypotheses about its own operations instead of redoing either proof. Across four case studies, a designer adds 27 to 3,231 lines against a 16,489-line framework, significantly reducing the verification effort. CertiFlash is open source.

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arXiv2026

ColumnKeeper: Efficient Solutions to the ColumnDisturb Vulnerability in DRAM-based Systems

Modern DRAM chips are vulnerable to read disturbance phenomena such as RowHammer and RowPress, which induce bitflips after accessing nearby rows a certain number of times (the read disturbance threshold). ColumnDisturb is a new, fundamentally different DRAM read disturbance phenomenon. Specifically, ColumnDisturb (i) disturbs DRAM columns instead of rows, and (ii) increases the number of affected DRAM cells from those in only a few neighboring rows to all cells across three consecutive DRAM subarrays. We propose ColumnKeeper, the first set of ColumnDisturb mitigations, in two variants: ColumnKeeper-D (CK-D), a deterministic mechanism, and ColumnKeeper-P (CK-P), a probabilistic one. CK-D exploits DRAM's open-bitline architecture to provide deterministic security guarantees at low performance and energy overheads: it uses two counters per subarray to track activations affecting the odd and even columns, and refreshes one row in a subarray when either counter reaches a predetermined threshold. CK-P instead refreshes one row in three consecutive subarrays upon a row activation in the middle subarray, with a predetermined probability, providing configurable security guarantees at low area overhead. Both mechanisms prevent ColumnDisturb bitflips at low performance, energy, and area overheads. At the current experimentally-demonstrated ColumnDisturb threshold (1M), CK-D and CK-P incur very low average single-core performance overheads of 0.15% and 0.36%, respectively. For near-future thresholds (128K), these rise to a still low average of 1.70% and 2.73%. Mitigating ColumnDisturb at low thresholds (e.g., 16K) remains possible by adopting smaller subarray sizes or enabling subarray-level parallelism. CK-D and CK-P require low area overheads of 0.1 mm^2 and 0.03 mm^2, respectively. ColumnKeeper is freely available at https://github.com/CMU-SAFARI/ColumnKeeper .

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arXiv2026

Memory-Centric Computing: Security Benefits and Challenges of Processing-in-DRAM

Today's computing systems are processor-centric: they require frequent data movement between processing elements (e.g., CPU) and main memory (DRAM), leading to significant inefficiencies in performance and energy consumption. Memory-centric computing instead moves computation to the data, enabling computation capability in and near all places where data is generated and stored, and greatly reducing the performance and energy overheads of data access and data movement. This shift from a processor-centric to a memory-centric paradigm has important and underexplored consequences for system security. Turning memory from a dumb, inactive store into an active computing substrate introduces benefits as well as challenges for system security: it can provide new in-memory security primitives and also reduce data exposure, but it can also expose new attack surfaces. This work discusses the security benefits and challenges of memory-centric computing, specifically Processing-in-DRAM (PiD), a paradigm where the operational characteristics of a DRAM chip are exploited and enhanced to perform computation on data stored in DRAM. Specifically, we describe 1) new state-of-the-art DRAM-based true random number generators that provide up to 16.05 Gb/s throughput and physical unclonable functions with 5.75% lower evaluation latency than the prior state-of-the-art, both on real DRAM chips and 2) two key security challenges of PiD: amplified DRAM read disturbance (e.g., 158x reduction in the minimum number of DRAM accesses required to induce the first bitflip) and high throughput memory timing channels (e.g., a communication throughput of 14.8Mb/s). We believe it is time to design, use, and program DRAM, and in general memory, not as an inactive storage substrate, but as a combined computation, storage, and security substrate, where computational capability, storage density, and security are all key goals.

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arXiv2026

In-DRAM Signature Generation Using Simultaneous Multiple-Row Activation: An Experimental Study of Off-The-Shelf DRAM Chips

We experimentally demonstrate that it is possible to generate unique, repeatable, and device-specific signatures suitable for use as Physical Unclonable Function (PUF) responses in commercial off-the-shelf (COTS) DRAM chips by leveraging simultaneous multiple-row activation (SiMRA). Based on a rigorous experimental characterization of 112 modern DDR4 DRAM chips (from 10 modules), we introduce SiMRA-PUF, the first DRAM-based PUF that uses SiMRA-generated signatures as PUF responses. We analyze SiMRA-PUF in terms of reliability, uniqueness, and evaluation latency for varying numbers of simultaneously activated DRAM rows (i.e., 2, 4, 8, 16, and 32), DRAM chip density & die revision, and evaluate how temperature affects the similarity of SiMRA-generated responses. Among our 8 key experimental observations, we highlight two major results. First, SiMRA-PUF provides average intra-Jaccard indices of 89.02%, 89.81%, 93.03%, 94.06%, and 94.86%, and average inter-Jaccard indices of 3.98%, 2.37%, 3.44%, 2.92%, and 3.24% for 2-, 4-, 8-, 16-, and 32-row activations, respectively, showing that SiMRA-generated signatures are both repeatable within a device and unique across devices. Second, 2-row activation-based SiMRA-PUF provides 5.75% lower evaluation latency than the state-of-the-art DRAM-based PUF. We open-source our infrastructure and datasets at https://github.com/CMU-SAFARI/SiMRA-PUF.

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arXiv2026

Extended Abstract: Re-Evaluating the Real-System Modeling Accuracy of Ramulator 2.0

Cycle-level DRAM simulators provide accurate and flexible models for DRAM and memory controller operations and enable research on current and future memory systems. Therefore, they are critical for improving the performance, efficiency, and robustness of DRAM-based memory systems. Ramulator 2.0 (successor of Ramulator) is a highly modular and extensible cycle-accurate DRAM simulator that enables rapid exploration of new ideas in DRAM-based memory systems. A MICRO 2024 best paper runner-up publication, A Mess of Memory System Benchmarking, Simulation and Application Profiling, which we refer to as "the Mess paper," with all three artifact badges awarded (including "Reproducible"), proposes a new benchmark to evaluate real and simulated memory system performance. While doing so, it makes strong negative claims about Ramulator 2.0 and shows unexpected results. In this talk and the associated extended abstract, we demonstrate that these results and claims in the Mess paper are incorrect and are due to configuration and simulator usage errors made in the Mess paper. We describe four best practices to aid users and developers of simulation tools to avoid such issues in the future. We emphasize the importance of contacting simulator authors and developers when unexpected results are observed (especially and importantly before publishing such results), to ensure these simulators are used with correct configurations and as intended. Our investigation also aims to stimulate discussion on artifact evaluation practices and on mechanisms for correcting results and artifacts after publication. To aid future works and reproduction of all our results, we open source all our code and scripts at https://github.com/CMU-SAFARI/Cleaning-up-the-Mess. We refer the reader to our full ISPASS 2026 paper and its artifact for the complete analysis, detailed methodology, and extended results.

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arXiv2026

A Modern Large-Scale Memory Characterization Laboratory

Real memory chip characterization yields insights into fundamental operational characteristics of modern memory, enabling new mechanisms that improve memory performance, robustness, security, and energy efficiency. We describe our large-scale DRAM characterization laboratory for understanding DRAM. A key building block of this laboratory is DRAM Bender, a versatile and easy-to-use modern DRAM characterization infrastructure. We have updated DRAM Bender to i) introduce support for new types of characterization experiments, ii) expand on its DRAM interface standard support, and iii) make it easier to use at large scale. This paper introduces these updates for the first time. We hope our infrastructure enables the community to discover new problems and solve critical memory scaling issues, enabling the overcoming of the huge memory bottleneck that plagues modern computing systems.

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arXiv2026

Cleaning up the Mess: Re-Evaluating the Real-System Modeling Accuracy of Ramulator 2.0

A MICRO 2024 best paper runner-up publication (the Mess paper) with all three artifact badges awarded (including ``Reproducible'') proposes a new benchmark to evaluate real and simulated memory system performance. The publication contends that Ramulator 2.0 and DAMOV (ZSim+Ramulator) (along with other existing memory system simulators) ``poorly resemble the actual system performance'' and asserts that their simulator is better. In this paper, we show that the Mess paper has 1) demonstrable technical misconfigurations, 2) methodological errors in interpreting simulation statistics, and 3) an incomplete artifact that makes its key results irreproducible. We demonstrate that the Ramulator 2.0 simulation results reported in the Mess paper are incorrect due to multiple configuration errors instead of inherent simulation inaccuracy claimed by the Mess paper. We show that by correctly configuring Ramulator 2.0, Ramulator 2.0's simulated memory system performance actually resembles real system characteristics well, and thus a key claimed contribution of the Mess paper is factually incorrect. We also identify that the DAMOV simulation results in the Mess paper use wrong simulation statistics that are unrelated to the simulated DRAM performance. We show that DAMOV's simulated DRAM latency is not constant, in contrast to the Mess paper's claim. Moreover, the Mess paper's artifact repository lacks the necessary sources to fully reproduce all the Mess paper's results. We find that the experiment scripts use simulator executables and other resources that are neither described in the Mess paper nor found in the artifact repository. We strongly encourage the computer architecture community to consider our corrections to the Ramulator 2.0 and DAMOV results of the Mess paper to prevent the propagation of inaccurate and misleading results and to maintain the reliability of the scientific record.

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arXiv2026

DiscoRD: An Experimental Methodology for Quickly Discovering the Reliable Read Disturbance Threshold of Real DRAM Chips

State-of-the-art DRAM read disturbance mitigations rely on the read disturbance threshold (RDT) (e.g., the number of aggressor row activations needed to induce the first read disturbance bitflip) to securely and performance- and energy-efficiently prevent read disturbance bitflips. However, accurately and exhaustively characterizing the RDT of every DRAM row in a chip is time intensive. Rapidly determining RDT is important for enabling secure, performance- and energy-efficient systems. Our goal is to develop and evaluate a reliable and rapid read disturbance testing methodology. To that end, we develop DiscoRD building on the key results of an extensive experimental characterization study using 212 real DDR4 chips whereby we measure the RDT of hundreds of thousands of DRAM rows millions of times. We develop an empirical model for read disturbance bitflips and evaluate the probability of read-disturbance-induced uncorrectable errors when a read disturbance mechanism is configured using a single $RDT_{min}$ measurement. Using this model we demonstrate that 1) relying on a lightweight error-correcting code (ECC) alone yields relatively high uncorrectable error probability and 2) combining ECC, infrequent memory scrubbing, and configurable read disturbance mitigation mechanisms can greatly reduce the error probability. Building on our observations and analyses, we discuss the RDT of each individual row can be identified more precisely. Our results show that error tolerance, memory scrubbing, online profiling, and run-time configurable read disturbance mitigation techniques are important to enable secure and energy-efficient spatial-variation aware read disturbance mitigations. We hope that DiscoRD drives research that enables us to quantitatively navigate the performance/cost - reliability tradeoff space for read disturbance mitigation techniques.

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arXiv2025

In-DRAM True Random Number Generation Using Simultaneous Multiple-Row Activation: An Experimental Study of Real DRAM Chips

In this work, we experimentally demonstrate that it is possible to generate true random numbers at high throughput and low latency in commercial off-the-shelf (COTS) DRAM chips by leveraging simultaneous multiple-row activation (SiMRA) via an extensive characterization of 96 DDR4 DRAM chips. We rigorously analyze SiMRA's true random generation potential in terms of entropy, latency, and throughput for varying numbers of simultaneously activated DRAM rows (i.e., 2, 4, 8, 16, and 32), data patterns, temperature levels, and spatial variations. Among our 11 key experimental observations, we highlight four key results. First, we evaluate the quality of our TRNG designs using the commonly-used NIST statistical test suite for randomness and find that all SiMRA-based TRNG designs successfully pass each test. Second, 2-, 8-, 16-, and 32-row activation-based TRNG designs outperform the state-of-theart DRAM-based TRNG in throughput by up to 1.15x, 1.99x, 1.82x, and 1.39x, respectively. Third, SiMRA's entropy tends to increase with the number of simultaneously activated DRAM rows. Fourth, operational parameters and conditions (e.g., data pattern and temperature) significantly affect entropy. For example, for most of the tested modules, the average entropy of 32-row activation is 2.51x higher than that of 2-row activation. For example, increasing the temperature from 50°C to 90°C decreases SiMRA's entropy by 1.53x for 32-row activation. To aid future research and development, we open-source our infrastructure at https://github.com/CMU-SAFARI/SiMRA-TRNG.

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arXiv2025

Revisiting Main Memory-Based Covert and Side Channel Attacks in the Context of Processing-in-Memory

We introduce IMPACT, a set of high-throughput main memory-based timing attacks that leverage characteristics of processing-in-memory (PiM) architectures to establish covert and side channels. IMPACT enables high-throughput communication and private information leakage by exploiting the shared DRAM row buffer. To achieve high throughput, IMPACT (i) eliminates expensive cache bypassing steps required by processor-centric memory-based timing attacks and (ii) leverages the intrinsic parallelism of PiM operations. We showcase two applications of IMPACT. First, we build two covert channels that leverage different PiM approaches (i.e., processing-near-memory and processing-using-memory) to establish high-throughput covert communication channels. Our covert channels achieve 8.2 Mb/s and 14.8 Mb/s communication throughput, respectively, which is 3.6x and 6.5x higher than the state-of-the-art main memory-based covert channel. Second, we showcase a side-channel attack that leaks private information of concurrently-running victim applications with a low error rate. Our source-code is openly and freely available at https://github.com/CMU-SAFARI/IMPACT.

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arXiv2025

Virtuoso: Enabling Fast and Accurate Virtual Memory Research via an Imitation-based Operating System Simulation Methodology

The unprecedented growth in data demand from emerging applications has turned virtual memory (VM) into a major performance bottleneck. Researchers explore new hardware/OS co-designs to optimize VM across diverse applications and systems. To evaluate such designs, researchers rely on various simulation methodologies to model VM components.Unfortunately, current simulation tools (i) either lack the desired accuracy in modeling VM's software components or (ii) are too slow and complex to prototype and evaluate schemes that span across the hardware/software boundary. We introduce Virtuoso, a new simulation framework that enables quick and accurate prototyping and evaluation of the software and hardware components of the VM subsystem. The key idea of Virtuoso is to employ a lightweight userspace OS kernel, called MimicOS, that (i) accelerates simulation time by imitating only the desired kernel functionalities, (ii) facilitates the development of new OS routines that imitate real ones, using an accessible high-level programming interface, (iii) enables accurate and flexible evaluation of the application- and system-level implications of VM after integrating Virtuoso to a desired architectural simulator. We integrate Virtuoso into five diverse architectural simulators, each specializing in different aspects of system design, and heavily enrich it with multiple state-of-the-art VM schemes. Our validation shows that Virtuoso ported on top of Sniper, a state-of-the-art microarchitectural simulator, models the memory management unit of a real high-end server-grade page fault latency of a real Linux kernel with high accuracy . Consequently, Virtuoso models the IPC performance of a real high-end server-grade CPU with 21% higher accuracy than the baseline version of Sniper. The source code of Virtuoso is freely available at https://github.com/CMU-SAFARI/Virtuoso.

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arXiv2025

Variable Read Disturbance: An Experimental Analysis of Temporal Variation in DRAM Read Disturbance

Modern DRAM chips are subject to read disturbance errors. State-of-the-art read disturbance mitigations rely on accurate and exhaustive characterization of the read disturbance threshold (RDT) (e.g., the number of aggressor row activations needed to induce the first RowHammer or RowPress bitflip) of every DRAM row (of which there are millions or billions in a modern system) to prevent read disturbance bitflips securely and with low overhead. We experimentally demonstrate for the first time that the RDT of a DRAM row significantly and unpredictably changes over time. We call this new phenomenon variable read disturbance (VRD). Our experiments using 160 DDR4 chips and 4 HBM2 chips from three major manufacturers yield two key observations. First, it is very unlikely that relatively few RDT measurements can accurately identify the RDT of a DRAM row. The minimum RDT of a DRAM row appears after tens of thousands of measurements (e.g., up to 94,467), and the minimum RDT of a DRAM row is 3.5X smaller than the maximum RDT observed for that row. Second, the probability of accurately identifying a row's RDT with a relatively small number of measurements reduces with increasing chip density or smaller technology node size. Our empirical results have implications for the security guarantees of read disturbance mitigation techniques: if the RDT of a DRAM row is not identified accurately, these techniques can easily become insecure. We discuss and evaluate using a guardband for RDT and error-correcting codes for mitigating read disturbance bitflips in the presence of RDTs that change unpredictably over time. We conclude that a >10% guardband for the minimum observed RDT combined with SECDED or Chipkill-like SSC error-correcting codes could prevent read disturbance bitflips at the cost of large read disturbance mitigation performance overheads (e.g., 45% performance loss for an RDT guardband of 50%).

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arXiv2024

Sectored DRAM: A Practical Energy-Efficient and High-Performance Fine-Grained DRAM Architecture

We propose Sectored DRAM, a new, low-overhead DRAM substrate that reduces wasted energy by enabling fine-grained DRAM data transfers and DRAM row activation. Sectored DRAM leverages two key ideas to enable fine-grained data transfers and row activation at low chip area cost. First, a cache block transfer between main memory and the memory controller happens in a fixed number of clock cycles where only a small portion of the cache block (a word) is transferred in each cycle. Sectored DRAM augments the memory controller and the DRAM chip to execute cache block transfers in a variable number of clock cycles based on the workload access pattern with minor modifications to the memory controller's and the DRAM chip's circuitry. Second, a large DRAM row, by design, is already partitioned into smaller independent physically isolated regions. Sectored DRAM provides the memory controller with the ability to activate each such region based on the workload access pattern via small modifications to the DRAM chip's array access circuitry. Activating smaller regions of a large row relaxes DRAM power delivery constraints and allows the memory controller to schedule DRAM accesses faster. Compared to a system with coarse-grained DRAM, Sectored DRAM reduces the DRAM energy consumption of highly-memory-intensive workloads by up to (on average) 33% (20%) while improving their performance by up to (on average) 36% (17%). Sectored DRAM's DRAM energy savings, combined with its system performance improvement, allows system-wide energy savings of up to 23%. Sectored DRAM's DRAM chip area overhead is 1.7% the area of a modern DDR4 chip. We hope and believe that Sectored DRAM's ideas and results will help to enable more efficient and high-performance memory systems. To this end, we open source Sectored DRAM at https://github.com/CMU-SAFARI/Sectored-DRAM.

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arXiv2024

Simultaneous Many-Row Activation in Off-the-Shelf DRAM Chips: Experimental Characterization and Analysis

We experimentally analyze the computational capability of commercial off-the-shelf (COTS) DRAM chips and the robustness of these capabilities under various timing delays between DRAM commands, data patterns, temperature, and voltage levels. We extensively characterize 120 COTS DDR4 chips from two major manufacturers. We highlight four key results of our study. First, COTS DRAM chips are capable of 1) simultaneously activating up to 32 rows (i.e., simultaneous many-row activation), 2) executing a majority of X (MAJX) operation where X>3 (i.e., MAJ5, MAJ7, and MAJ9 operations), and 3) copying a DRAM row (concurrently) to up to 31 other DRAM rows, which we call Multi-RowCopy. Second, storing multiple copies of MAJX's input operands on all simultaneously activated rows drastically increases the success rate (i.e., the percentage of DRAM cells that correctly perform the computation) of the MAJX operation. For example, MAJ3 with 32-row activation (i.e., replicating each MAJ3's input operands 10 times) has a 30.81% higher average success rate than MAJ3 with 4-row activation (i.e., no replication). Third, data pattern affects the success rate of MAJX and Multi-RowCopy operations by 11.52% and 0.07% on average. Fourth, simultaneous many-row activation, MAJX, and Multi-RowCopy operations are highly resilient to temperature and voltage changes, with small success rate variations of at most 2.13% among all tested operations. We believe these empirical results demonstrate the promising potential of using DRAM as a computation substrate. To aid future research and development, we open-source our infrastructure at https://github.com/CMU-SAFARI/SiMRA-DRAM.

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arXiv2024

Functionally-Complete Boolean Logic in Real DRAM Chips: Experimental Characterization and Analysis

Processing-using-DRAM (PuD) is an emerging paradigm that leverages the analog operational properties of DRAM circuitry to enable massively parallel in-DRAM computation. PuD has the potential to reduce or eliminate costly data movement between processing elements and main memory. Prior works experimentally demonstrate three-input MAJ (MAJ3) and two-input AND and OR operations in commercial off-the-shelf (COTS) DRAM chips. Yet, demonstrations on COTS DRAM chips do not provide a functionally complete set of operations. We experimentally demonstrate that COTS DRAM chips are capable of performing 1) functionally-complete Boolean operations: NOT, NAND, and NOR and 2) many-input (i.e., more than two-input) AND and OR operations. We present an extensive characterization of new bulk bitwise operations in 256 off-the-shelf modern DDR4 DRAM chips. We evaluate the reliability of these operations using a metric called success rate: the fraction of correctly performed bitwise operations. Among our 19 new observations, we highlight four major results. First, we can perform the NOT operation on COTS DRAM chips with a 98.37% success rate on average. Second, we can perform up to 16-input NAND, NOR, AND, and OR operations on COTS DRAM chips with high reliability (e.g., 16-input NAND, NOR, AND, and OR with an average success rate of 94.94%, 95.87%, 94.94%, and 95.85%, respectively). Third, data pattern only slightly affects bitwise operations. Our results show that executing NAND, NOR, AND, and OR operations with random data patterns decreases the success rate compared to all logic-1/logic-0 patterns by 1.39%, 1.97%, 1.43%, and 1.98%, respectively. Fourth, bitwise operations are highly resilient to temperature changes, with small success rate fluctuations of at most 1.66% when the temperature is increased from 50C to 95C. We open-source our infrastructure at https://github.com/CMU-SAFARI/FCDRAM

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arXiv2024

PULSAR: Simultaneous Many-Row Activation for Reliable and High-Performance Computing in Off-the-Shelf DRAM Chips

Data movement between the processor and the main memory is a first-order obstacle against improving performance and energy efficiency in modern systems. To address this obstacle, Processing-using-Memory (PuM) is a promising approach where bulk-bitwise operations are performed leveraging intrinsic analog properties within the DRAM array and massive parallelism across DRAM columns. Unfortunately, 1) modern off-the-shelf DRAM chips do not officially support PuM operations, and 2) existing techniques of performing PuM operations on off-the-shelf DRAM chips suffer from two key limitations. First, these techniques have low success rates, i.e., only a small fraction of DRAM columns can correctly execute PuM operations because they operate beyond manufacturer-recommended timing constraints, causing these operations to be highly susceptible to noise and process variation. Second, these techniques have limited compute primitives, preventing them from fully leveraging parallelism across DRAM columns and thus hindering their performance benefits. We propose PULSAR, a new technique to enable high-success-rate and high-performance PuM operations in off-the-shelf DRAM chips. PULSAR leverages our new observation that a carefully crafted sequence of DRAM commands simultaneously activates up to 32 DRAM rows. PULSAR overcomes the limitations of existing techniques by 1) replicating the input data to improve the success rate and 2) enabling new bulk bitwise operations (e.g., many-input majority, Multi-RowInit, and Bulk-Write) to improve the performance. Our analysis on 120 off-the-shelf DDR4 chips from two major manufacturers shows that PULSAR achieves a 24.18% higher success rate and 121% higher performance over seven arithmetic-logic operations compared to FracDRAM, a state-of-the-art off-the-shelf DRAM-based PuM technique.

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arXiv2024

CoMeT: Count-Min-Sketch-based Row Tracking to Mitigate RowHammer at Low Cost

We propose a new RowHammer mitigation mechanism, CoMeT, that prevents RowHammer bitflips with low area, performance, and energy costs in DRAM-based systems at very low RowHammer thresholds. The key idea of CoMeT is to use low-cost and scalable hash-based counters to track DRAM row activations. CoMeT uses the Count-Min Sketch technique that maps each DRAM row to a group of counters, as uniquely as possible, using multiple hash functions. When a DRAM row is activated, CoMeT increments the counters mapped to that DRAM row. Because the mapping from DRAM rows to counters is not completely unique, activating one row can increment one or more counters mapped to another row. Thus, CoMeT may overestimate, but never underestimates, a DRAM row's activation count. This property of CoMeT allows it to securely prevent RowHammer bitflips while properly configuring its hash functions reduces overestimations. As a result, CoMeT 1) implements substantially fewer counters than the number of DRAM rows in a DRAM bank and 2) does not significantly overestimate a DRAM row's activation count. Our comprehensive evaluations show that CoMeT prevents RowHammer bitflips with an average performance overhead of only 4.01% across 61 benign single-core workloads for a very low RowHammer threshold of 125, normalized to a system with no RowHammer mitigation. CoMeT achieves a good trade-off between performance, energy, and area overheads. Compared to the best-performing state-of-the-art mitigation, CoMeT requires 74.2x less area overhead at the RowHammer threshold 125 and incurs a small performance overhead on average for all RowHammer thresholds. Compared to the best-performing low-area-cost mechanism, at a very low RowHammer threshold of 125, CoMeT improves performance by up to 39.1% while incurring a similar area overhead. CoMeT is openly and freely available at https://github.com/CMU-SAFARI/CoMeT.

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arXiv2024

Victima: Drastically Increasing Address Translation Reach by Leveraging Underutilized Cache Resources

Address translation is a performance bottleneck in data-intensive workloads due to large datasets and irregular access patterns that lead to frequent high-latency page table walks (PTWs). PTWs can be reduced by using (i) large hardware TLBs or (ii) large software-managed TLBs. Unfortunately, both solutions have significant drawbacks: increased access latency, power and area (for hardware TLBs), and costly memory accesses, the need for large contiguous memory blocks, and complex OS modifications (for software-managed TLBs). We present Victima, a new software-transparent mechanism that drastically increases the translation reach of the processor by leveraging the underutilized resources of the cache hierarchy. The key idea of Victima is to repurpose L2 cache blocks to store clusters of TLB entries, thereby providing an additional low-latency and high-capacity component that backs up the last-level TLB and thus reduces PTWs. Victima has two main components. First, a PTW cost predictor (PTW-CP) identifies costly-to-translate addresses based on the frequency and cost of the PTWs they lead to. Second, a TLB-aware cache replacement policy prioritizes keeping TLB entries in the cache hierarchy by considering (i) the translation pressure (e.g., last-level TLB miss rate) and (ii) the reuse characteristics of the TLB entries. Our evaluation results show that in native (virtualized) execution environments Victima improves average end-to-end application performance by 7.4% (28.7%) over the baseline four-level radix-tree-based page table design and by 6.2% (20.1%) over a state-of-the-art software-managed TLB, across 11 diverse data-intensive workloads. Victima (i) is effective in both native and virtualized environments, (ii) is completely transparent to application and system software, and (iii) incurs very small area and power overheads on a modern high-end CPU.

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