arXiv subjects

F. Ponce

Publications and source records attributed to F. Ponce.

24 records · Page 2Linked to original sources

arXiv2019

Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors

A model for charge trapping and impact ionization, and an experiment to measure these parameters is presented for the SuperCDMS HVeV detector. A procedure to isolate and quantify the main sources of noise (bulk and surface charge leakage) in the measurements is also describe. This sets the stage to precisely measure the charge trapping and impact ionization probabilities in order to incorporate this model into future dark matter searches.

physics.ins-det↗

arXiv2019

Measuring the Impact Ionization and Charge Trapping Probabilities in SuperCDMS HVeV Phonon Sensing Detectors

A 0.93 gram $1{\times}1{\times}0.4$ cm$^3$ SuperCDMS silicon HVeV detector operated at 30 mK was illuminated by 1.91 eV photons using a room temperature pulsed laser coupled to the cryostat via fiber optic. The detector's response under a variety of specific operating conditions was used to study the detector leakage current, charge trapping and impact ionization in the high-purity Si substrate. The measured probabilities for a charge carrier in the detector to undergo charge trapping (0.713 $\pm$ 0.093%) or cause impact ionization (1.576 $\pm$ 0.110%) were found to be nearly independent of bias polarity and charge-carrier type (electron or hole) for substrate biases of $\pm$ 140 V.

physics.ins-det↗

arXiv2019

High-field Spatial Imaging of Charge Transport in Silicon at Low Temperature

We present direct imaging measurements of charge transport across a 1 cm x 1 cm x 4 mm-thick crystal of high purity silicon ($\sim$15 k$Ω$-cm) at temperatures of 5 K and 500 mK. We use these data to measure the lateral diffusion of electrons and holes as a function of the electric field applied along the [111] crystal axis, and to verify our low-temperature Monte Carlo software. The range of field strengths in this paper exceed those used in the previous study (DOI: 10.1063/1.5049691) by a factor of 10, and now encompasses the region in which some recent silicon dark matter detectors operate (DOI: 10.1103/PhysRevLett.121.051301). We also report on a phenomenon of surface charge trapping which can reduce expected charge collection.

cond-mat.mtrl-sci↗

arXiv2019

Production Rate Measurement of Tritium and Other Cosmogenic Isotopes in Germanium with CDMSlite

Future direct searches for low-mass dark matter particles with germanium detectors, such as SuperCDMS SNOLAB, are expected to be limited by backgrounds from radioactive isotopes activated by cosmogenic radiation inside the germanium. There are limited experimental data available to constrain production rates and a large spread of theoretical predictions. We examine the calculation of expected production rates, and analyze data from the second run of the CDMS low ionization threshold experiment (CDMSlite) to estimate the rates for several isotopes. We model the measured CDMSlite spectrum and fit for contributions from tritium and other isotopes. Using the knowledge of the detector history, these results are converted to cosmogenic production rates at sea level. The production rates in atoms/(kg$\cdot$day) are 74$\pm$9 for $^3$H, 1.5$\pm$0.7 for $^{55}$Fe, 17$\pm$5 for $^{65}$Zn, and 30$\pm$18 for $^{68}$Ge.

physics.ins-det↗

arXiv2018

Spatial Imaging of Charge Transport in Silicon at Low Temperature

We present direct imaging measurements of charge transport across a 1 cm$\times$ 1 cm$\times$ 4 mm crystal of high purity silicon ($\sim$20 k$Ω$cm) at temperatures between 500 mK and and 5 K. We use these data to determine the intervalley scattering rate of electrons as a function of the electric field applied along the $\langle 111 \rangle$ crystal axis, and we present a phenomenological model of intervalley scattering that explains the constant scattering rate seen at low-voltage for cryogenic temperatures. We also demonstrate direct imaging measurements of effective hole mass anisotropy, which is strongly dependent on both temperature and electric field strength. The observed effects can be explained by a warping of the valence bands for carrier energies near the spin-orbit splitting energy in silicon.

cond-mat.mtrl-sci↗

arXiv2017

Thermal detection of single e-h pairs in a biased silicon crystal detector

We demonstrate that individual electron-hole pairs are resolved in a 1 cm$^2$ by 4 mm thick silicon crystal (0.93 g) operated at $\sim$35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted electro-thermal-feedback transition edge sensor (QET) arrays held near ground potential. The other side contains a bias grid with 20\% coverage. Bias potentials up to $\pm$ 160 V were used in the work reported here. A fiber optic provides 650~nm (1.9 eV) photons that each produce an electron-hole ($e^{-} h^{+}$) pair in the crystal near the grid. The energy of the drifting charges is measured with a phonon sensor noise $σ$ $\sim$0.09 $e^{-} h^{+}$ pair. The observed charge quantization is nearly identical for $h^+$'s or $e^-$'s transported across the crystal.

physics.ins-det↗