arXiv subjects

F. Seilmeier

Publications and source records attributed to F. Seilmeier.

3 recordsLinked to original sources

arXiv2014

Locating environmental charge impurities with confluent laser spectroscopy of multiple quantum dots

We used resonant laser spectroscopy of multiple confocal InGaAs quantum dots to spatially locate charge fluctuators in the surrounding semiconductor matrix. By mapping out the resonance condition between a narrow-band laser and the neutral exciton transitions of individual dots in a field effect device, we identified spectral discontinuities as arising from charging and discharging events that take place within the volume adjacent to the quantum dots. Our analysis suggests that residual carbon dopants are a major source of charge-fluctuating traps in quantum dot heterostructures.

cond-mat.mes-hall↗

arXiv2014

Sub-Kelvin optical thermometry of an electron reservoir coupled to a self-assembled InGaAs quantum dot

We show how resonant laser spectroscopy of the trion optical transitions in a self-assembled quantum dot can be used to determine the temperature of a nearby electron reservoir. At finite magnetic field the spin-state occupation of the Zeeman-split quantum dot electron ground states is governed by thermalization with the electron reservoir via co-tunneling. With resonant spectroscopy of the corresponding excited trion states we map out the spin occupation as a function of magnetic field to establish optical thermometry for the electron reservoir. We demonstrate the implementation of the technique in the sub-Kelvin temperature range where it is most sensitive, and where the electron temperature is not necessarily given by the cryostat base temperature.

cond-mat.mes-hall↗

arXiv2011

Forming and confining of dipolar excitons by quantizing magnetic fields

We show that a magnetic field perpendicular to an AlGaAs/GaAs coupled quantum well efficiently traps dipolar excitons and leads to the stabilization of the excitonic formation and confinement in the illumination area. Hereby, the density of dipolar excitons is remarkably enhanced up to $\sim 10^{11} cm^{-2}$. By means of Landau level spectroscopy we study the density of excess holes in the illuminated region. Depending on the excitation power and the applied electric field, the hole density can be tuned over one order of magnitude up to $\sim 2.5$ $10^{11} cm^{-2}$ - a value comparable with typical carrier densities in modulation-doped structures.

cond-mat.mes-hall↗