arXiv subjects

F. Urban

Publications and source records attributed to F. Urban.

7 recordsLinked to original sources

arXiv2025

New full-sky studies of the distribution of ultra-high-energy cosmic-ray arrival directions

Ground-based full-sky studies of the angular distribution of arrival directions of ultra-high-energy cosmic rays require combining data from different observatories, such as the Pierre Auger Observatory (Auger) and the Telescope Array (TA), because no single array can cover all declinations. A working group comprising members from the Auger and TA collaborations has been tasked with performing such studies for more than a decade and has found several indications of full-sky anisotropies. Here, we update the results for the large- and medium-scale anisotropy analyses using the latest data from TA, which include corrections for daily and yearly atmospheric effects in data for large-scale anisotropies and looser selection criteria in data for medium-scale anisotropies. We extend the latter one by considering two more galaxy catalogues, consisting of jetted or all AGNs. Finally we also introduce a new angular harmonic space analysis that allows us to measure both the auto-correlation and cross-correlation with all catalogues for all multipoles independently ($\ell_\text{max} = 20$ in this work) and scanning the energy threshold.

astro-ph.HE↗

arXiv2023

Gas dependent hysteresis in MoS$_2$ field effect transistors

We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistors. The presence of defects and point vacancies in the MoS2 crystal structure facilitates the adsorption of oxygen, nitrogen, hydrogen or methane, which strongly affect the transistor electrical characteristics. Although the gas adsorption does not modify the conduction type, we demonstrate a correlation between hysteresis width and adsorption energy onto the MoS2 surface. We show that hysteresis is controllable by pressure and/or gas type. Hysteresis features two well-separated current levels, especially when gases are stably adsorbed on the channel, which can be exploited in memory devices.

cond-mat.mes-hall↗

arXiv2023

2022 report from the Auger-TA working group on UHECR arrival directions

After over 60 years, the powerful engines that accelerate ultra-high-energy cosmic rays (UHECRs) to the formidable energies at which we observe them from Earth remain mysterious. Assuming standard physics, we expect UHECR sources to lie within the local Universe (up to a few hundred~Mpc). The distribution of matter in the local Universe is anisotropic, and we expect this anisotropy to be imprinted on the distribution of UHECR arrival directions. Even though intervening intergalactic and Galactic magnetic fields deflect charged UHECRs and can distort these anisotropies, some amount of information on the distribution of the sources is preserved. In this proceedings contribution, we present the results of the joint Pierre Auger Observatory and Telescope Array searches for (a) the largest-scale anisotropies (the harmonic dipole and quadrupole) and (b) correlations with a sample of nearby starburst galaxies and the 2MRS catalogue tracing stellar mass within~250~Mpc. This analysis updates our previous results with the most recent available data, notably with the addition of 3~years of new Telescope Array data. The main finding is a correlation between the arrival directions of $12.1\%_{-3.1\%}^{+4.5\%}$~of UHECRs detected with $E \geq 38$~EeV by~Auger or with~$E \gtrsim 49$~EeV by~TA and the positions of nearby starburst galaxies on a ${15.1\text{deg}}_{-3.0\text{deg}}^{+4.6\text{deg}}$~angular scale, with a $4.7\sigma$~post-trial significance, up from $4.2\sigma$ obtained in our previous study.

astro-ph.HE↗

arXiv2020

Vacuum gauge from ultrathin MoS2 transistor

We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Hence, we propose the device as an air pressure sensor, showing that it is particularly suitable as a low power consumption vacuum gauge. The device functions on pressure-dependent O2, N2 and H2O molecule adsorption that affect the n-doping of the MoS2 channel.

physics.app-ph↗

arXiv2020

Electron irradiation of metal contacts in monolayer MoS$_2$ Field-Effect Transistors

This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam improves the transistor conductance. We simulate the path of the electrons in the device and show that most of the beam energy is absorbed in the metal contacts. Hence, we propose that the transistor current enhancement is due to thermally induced interfacial reactions that lower the contact Schottky barriers. We also show that the electron beam conditioning of contacts is permanent, while the irradiation of the channel can produce transient effects.

physics.app-ph↗

arXiv2020

Electron irradiation on multilayer PdSe$_2$ field effect transistors

Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical properties largely tunable by the number of layers. In this work, PdSe2 is used in the form of multilayer as the channel of back-gate field-effect transistors, which are studied under repeated electron irradiations. Source-drain Pd leads enable contacts with resistance below 350 kOhm um. The transistors exhibit a prevailing n-type conduction in high vacuum, which reversibly turns into ambipolar electric transport at atmospheric pressure. Irradiation by 10 keV electrons suppresses the channel conductance and promptly transforms the device from n-type to p-type. An electron fluence as low as 160 e-/nm2 dramatically change the transistor behavior demonstrating a high sensitivity of PdSe2 to electron irradiation. The sensitivity is lost after few exposures, that is a saturation condition is reached for fluence higher than 4000 e-/nm2. The damage induced by high electron fluence is irreversible as the device persist in the radiation-modified state for several hours, if kept in vacuum and at room temperature. With the support of numerical simulation, we explain such a behavior by electron-induced Se atom vacancy formation and charge trapping in slow trap states at the Si/SiO_2 interface.

physics.app-ph↗

arXiv2020

Field emission in ultrathin PdSe2 back-gated transistors

We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction, combined with the sharp edge and the workfunction decreasing with the number of layers, opens the way to applications of PdSe2 nanosheets in vacuum electronics. In this work, we demonstrate field emission from few-layer PdSe2 nanosheets with current up to the uA and turn-on field below 100 V/um, thus extending the plethora of applications of this recently isolated pentagonal layered material.

physics.app-ph↗