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Fabian Pauly

Publications and source records attributed to Fabian Pauly.

At least 19 recordsLinked to original sources

Beyond Drug Discovery: The Nanotechnology Molecular Optimization (NMO) Benchmark

Generative molecular design is shaped by simple proxy benchmarks for drug-like properties and models pretrained on large pharmaceutical datasets. This combination yields strong benchmark metrics but limits transferability to domains structurally distinct from drug discovery. To overcome this limitation and drive discovery toward real, scientifically grounded targets, we introduce the Nanotechnology Molecular Optimization (NMO) Benchmark, which bridges machine learning (ML) and quantum materials science. NMO acts simultaneously as a rigorous testbed for the ML community and a discovery engine for nanotechnology research. The suite replaces proxy oracles with quantum simulations and introduces strict protocols that prioritize scientific utility over leaderboard-oriented overfitting. The physics-based NMO tasks impose hard structural constraints and rugged fitness landscapes, posing fundamentally new requirements on generative models. Notably, advanced molecular optimization methods underperform much simpler approaches on the NMO tasks. We develop a new baseline method identifying the critical components to solve the NMO tasks, including a novel representation for modeling structural constraints and a domain-agnostic pretraining strategy to eliminate pharmaceutical dataset bias. Our results surpass state-of-the-art physical properties and reveal previously unknown structural motifs, offering new insights for the nanotechnology community and demonstrating that ML can drive genuine scientific discovery.

cs.LG

Stretching helical molecular springs: the peculiar evolution of electron transport in helicene junctions

Single-molecule junctions represent electromechanical systems at the edge of device miniaturization. Despite extensive studies on the interplay between mechanical manipulation and electron transport in molecular junctions, a thorough understanding of conducting molecular springs remains elusive. Here, we investigate the impact of mechanical elongation and compression on the electron transport and electronic structure of helicene-based spring-like single-molecule junctions, utilizing 2,2'-dithiol-[6]helicene and thioacetyl-[13]helicene molecules bridging two gold electrodes. We observe robust, reversible U-shaped conductance variations with interelectrode distance. Ab-initio electronic structure and quantum transport calculations reveal that this behavior stems from destructive quantum interference, induced mainly by modifications of the coupling at the metal-molecule interface as a peculiar outcome of the helical backbone deformation. These findings highlight the central role of the helical geometry in combination with contact properties in the electromechanical response of conducting molecular springs, offering insights for designing functional electromechanical devices that leverage similar mechanisms.

cond-mat.mes-hall

Classifying destructive quantum interference in molecular junctions: Towards molecular quantum rulers

Destructive quantum interference in molecular junctions might be used to build molecular quantum rulers, allowing to quantify changes in external control parameters electrically. For this reason, it is important to understand which patterns of destructive quantum interference can occur inside the electronic excitation gap of a molecule, coupled to conducting electrodes. By considering a four-level model, we show that much more complex destructive quantum interference behavior can arise than expected for just two levels. We classify the destructive quantum interferences analytically and show that they may even occur in regions forbidden by the standard orbital rule for electron transport. Our results suggest that appropriate molecular design may indeed allow to construct highly sensitive molecular quantum rulers.

cond-mat.mes-hall

Revealing molecule-internal mechanisms that control phonon heat transport through single-molecule junctions by a genetic algorithm

Measurements of the thermal conductance of single-molecule junctions have recently been reported for the first time. It is presently unclear, how much the heat transport can be controlled through molecule-internal effects. The search for molecules with lowest and highest thermal conductance is complicated by the gigantic chemical space. Here we describe a systematic search for molecules with a low or a high phononic thermal conductance using a genetic algorithm. Beyond individual structures of well performing molecules, delivered by the genetic algorithm, we analyze patterns and identify the different physical and chemical mechanisms to suppress or enhance phonon heat flow. In detail, mechanisms revealed to reduce phonon transport are related to the choice of terminal linker blocks, substituents and corresponding mass disorder or destructive interference, meta couplings and molecule-internal twist. For a high thermal conductance, the molecules should instead be rather uniform and chain-like. The identified mechanisms are systematically analyzed at different levels of theory, and their significance is classified. Our findings are expected to be important for the emerging field of molecular phononics.

cond-mat.mes-hall

Efficient Treatment of Relativistic Effects with Periodic Density Functional Methods: Energies, Gradients, and Stress Tensors

The implementation of an efficient self-consistent field (SCF) method including both scalar relativistic effects and spin-orbit interaction in density functional theory (DFT) is presented. We make use of Gaussian-type orbitals (GTOs) and all integrals are evaluated in real space. Our implementation supports density functional approximations up to the level of meta-generalized gradient approximations (mGGAs) for SCF energies and gradients. The latter can be used to compute the stress tensor and consequently allow us to optimize the cell structure. Considering spin-orbit interaction requires the extension of the standard procedures to a two-component (2c) formalism and a non-collinear approach for open-shell systems. Here, we implemented both the canonical and the Scalmani-Frisch non-collinear DFT formalisms, with hybrid and range-separated hybrid functionals being presently restricted to SCF energies. We demonstrate both efficiency and relevance of spin-orbit effects for the electronic structure of discrete systems and systems periodic in one to three dimensions.

physics.chem-ph

Simulating bistable current-induced switching of metallic atomic contacts by electron-vibration scattering

We present a microscopic model, describing current-driven switching in metallic atomic-size contacts. Applying a high current through an atomic-size contact, creates a strong electronic nonequilibrium that excites vibrational modes by virtue of the electron-vibration coupling. Using density functional theory (DFT) in combination with the Landauer-Büttiker theory for phase-coherent transport, expressed in terms of nonequilibrium Green's functions (NEGFs), we study the current-induced forces arising from this nonequilibrium and determine those vibrational modes which couple most strongly to the electronic system. For single-atom lead (Pb) contacts we show specific candidates for bistable switches, consisting of two similar atomic configurations with differing electric conductance. We identify vibrational modes that induce a transition between these configurations. Our results reveal a possible origin of bistable switching in atomic-size contacts through excitation of vibrations by inelastic electron scattering and underline the power of the combined DFT-NEGF approach and statistical mechanics analysis of a Langevin equation to overcome the time-scale gap between atomic motion and rare switching events, allowing for an efficient exploration of the contacts' configurational phase space.

cond-mat.mes-hall

Phononic heat conductance of gold atomic contacts: Coherent versus incoherent transport

We present here a theoretical method to determine the phononic contribution to the thermal conductance of nanoscale systems in the phase-coherent regime. Our approach makes use of classical molecular dynamics (MD) simulations to calculate the temperature-dependent dynamical matrix, and the phononic heat conductance is subsequently computed within the Landauer-Büttiker formalism with the help of nonequilibrium Green's function techniques. Tailored to nanostructures, crucial steps of force constant and heat transport calculations are performed directly in real space. As compared to conventional density functional theory (DFT) approaches, the advantage of our method is two-fold. First, interatomic interactions can be described with the method of choice. Semiempirical potentials may lead to large computational speedups, enabling the study of much larger systems. Second, the method naturally takes into account the temperature dependence of atomic force constants, an aspect that is ignored in typical static DFT-based calculations. We illustrate our method by analyzing the temperature dependence of the phononic thermal conductance of gold (Au) chains with lengths ranging from 1 to 12 atoms. Moreover, in order to evaluate the importance of anharmonic effects in these atomic-scale wires, we compare the phase-coherent approach with nonequilibrium MD (NEMD) simulations. We find that the predictions of the phase-coherent method and the classical NEMD approach largely agree above the Debye temperature for all studied chain lengths, which shows that heat transport is coherent and that our phase-coherent approach is well suited for such nanostructures.

cond-mat.mes-hall

Phonon-assisted carrier cooling in h-BN/graphene van der Waals heterostructures

Being used in optoelectronic devices as ultra-thin conductor-insulator junctions, detailed investigations are needed about how exactly h-BN and graphene hybridize. Here, we present a comprehensive ab initio study of hot carrier dynamics governed by electron-phonon scattering at the h-BN/graphene interface, using graphite (bulk), monolayer and bilayer graphene as benchmark materials. In contrast to monolayer graphene, all multilayer structures possess low-energy optical phonon modes that facilitate carrier thermalization. We find that the h-BN/graphene interface represents an exception with comparatively weak coupling between low-energy optical phonons and electrons. As a consequence, the thermalization bottleneck effect, known from graphene, survives hybridization with h-BN but is substantially reduced in all other bilayer and multilayer cases considered. In addition, we show that the quantum confinement in bilayer graphene does not have a significant influence on the thermalization time compared to graphite and that bilayer graphene can hence serve as a minimal model for the bulk counterpart.

cond-mat.mes-hall

Quantum-correlated photons generated by nonlocal electron transport

Since the realization of high-quality microwave cavities coupled to quantum dots, one can envisage the possibility to investigate the coherent interaction of light and matter in semiconductor quantum devices. Here we study a parallel double quantum dot device operating as single-electron splitter interferometer, with each dot coupled to a local photon cavity. We explore how quantum correlation and entanglement between the two separated cavities are generated by the coherent transport of a single electron passing simultaneously through the two different dots. We calculate the covariance of the cavity occupations by use of a diagrammatic perturbative expansion based on Keldysh Green's functions to the fourth order in the dot-cavity interaction strength, taking into account vertex diagrams. In this way, we demonstrate the creation of entanglement by showing that the classical Cauchy-Schwarz inequality is violated if the energy levels of the two dots are almost degenerate. For large level detunings or a single dot coupled to two cavities, we show that the inequality is not violated.

cond-mat.mes-hall

Extracting the Transport Channel Transmissions in Scanning Tunneling Microscopy using the Superconducting Excess Current

Transport through quantum coherent conductors, like atomic junctions, is described by the distribution of conduction channels. Information about the number of channels and their transmission can be extracted from various sources, such as multiple Andreev reflections, dynamical Coulomb blockade, or shot noise. We complement this set of methods by introducing the superconducting excess current as a new tool to continuously extract the transport channel transmissions of an atomic scale junction in a scanning tunneling microscope. In conjunction with ab initio simulations, we employ this technique in atomic aluminum junctions to determine the influence of the structure adjacent to the contact atoms on the transport properties.

cond-mat.supr-con

Charge-carrier thermalization in bulk and monolayer CdTe from first principles

While cadmium telluride (CdTe) thin films are being used in solar cell prototyping for decades, the recent advent of two-dimensional (2D) materials challenges the fundamental limit for thickness of conventional CdTe layers. Here, we report our theoretical predictions on photocarrier dynamics in an ultimately thin (about 1 nm) CdTe slab. It corresponds to a layer that is just a single unit cell thick, when the bulk parent crystal in the zinc blende phase is cleaved along the [110] facet. Using an \textit{ab-initio} method based on density functional theory (DFT) and the Boltzmann equation in the relaxation time approximation (RTA), we determine the thermalization time for charge carriers excited to a certain energy for instance through laser irradiation. Our calculations include contributions arising from all phonon branches in the first Brillouin zone (BZ), thus capturing all relevant inter- and intraband carrier transitions due to electron-phonon scattering. We find that the photocarrier thermalization time is strongly reduced, by one order of magnitude for holes and by three orders of magnitude for electrons, once the CdTe crystal is thinned down from the bulk to a monolayer. Most surprisingly, the electron thermalization time becomes independent of the electron excess energy up to about 0.5~eV, when counted from the conduction band minimum (CBM). We relate this peculiar behavior to the degenerate and nearly parabolic lowest conduction band that yields a constant density of states (DOS) in the 2D limit. Our findings may be useful for designing novel CdTe-based optoelectronic devices, which employ nonequilibrium photoexcited carriers to improve the performance.

cond-mat.mtrl-sci

Giant anisotropic magnetoresistance through a tilted molecular $π$-orbital

Anisotropic magnetoresistance (AMR), originating from spin-orbit coupling (SOC), is the sensitivity of the electrical resistance in magnetic systems to the direction of spin magnetization. Although this phenomenon has been experimentally reported for several nanoscale junctions, a clear understanding of the physical mechanism behind it is still elusive. Here we discuss a novel concept based on orbital symmetry considerations to attain a significant AMR of up to 95\% for a broad class of $π$-type molecular spin-valves. It is illustrated at the benzene-dithiolate molecule connected between two monoatomic nickel electrodes. We find that SOC opens, via spin-flip events at the ferromagnet-molecule interface, a new conduction channel, which is fully blocked by symmetry without SOC. Importantly, the interplay between main and new transport channels turns out to depend strongly on the magnetization direction in the nickel electrodes due to the tilting of molecular orbital. Moreover, due to multi-band quantum interference, appearing at the band edge of nickel electrodes, a transmission drop is observed just above the Fermi energy. Altogether, these effects lead to a significant AMR around the Fermi level, which even changes a sign. Our theoretical understanding, corroborated in terms of \textit{ab initio} calculations and simplified analytical models, reveals the general principles for an efficient realization of AMR in molecule-based spintronic devices.

cond-mat.mtrl-sci

Harnessing Exciton-Exciton Annihilation in Two-Dimensional Semiconductors

Strong many-body interactions in two-dimensional (2D) semiconductors give rise to efficient exciton-exciton annihilation (EEA). This process is expected to result in the generation of unbound high energy carriers. Here, we report an unconventional photoresponse of van der Waals heterostructure devices resulting from efficient EEA. Our heterostructures, which consist of monolayer transition metal dichalcogenide (TMD), hexagonal boron nitride (hBN), and few-layer graphene, exhibit photocurrent when photoexcited carriers possess sufficient energy to overcome the high energy barrier of hBN. Interestingly, we find that the device exhibits moderate photocurrent quantum efficiency even when the semiconducting TMD layer is excited at its ground exciton resonance despite the high exciton binding energy and large transport barrier. Using ab initio calculations, we show that EEA yields highly energetic electrons and holes with unevenly distributed energies depending on the scattering condition. Our findings highlight the dominant role of EEA in determining the photoresponse of 2D semiconductor optoelectronic devices.

cond-mat.mes-hall

Thermalization of photoexcited carriers in two-dimensional transition metal dichalcogenides and internal quantum efficiency of van der Waals heterostructures

Van der Waals semiconductor heterostructures could be a platform to harness hot photoexcited carriers in the next generation of optoelectronic and photovoltaic devices. The internal quantum efficiency of hot-carrier devices is determined by the relation between photocarrier extraction and thermalization rates. Using \textit{ab-initio} methods we show that the photocarrier thermalization time in single-layer transition metal dichalcogenides strongly depends on the peculiarities of the phonon spectrum and the electronic spin-orbit coupling. In detail, the lifted spin degeneracy in the valence band suppresses the hole scattering on acoustic phonons, slowing down the thermalization of holes by one order of magnitude as compared to electrons. Moreover, the hole thermalization time behaves differently in MoS$_2$ and WSe$_2$ because spin-orbit interactions differ in these seemingly similar materials. We predict that the internal quantum efficiency of a tunneling van der Waals semiconductor heterostructure depends qualitatively on whether MoS$_2$ or WSe$_2$ is used.

cond-mat.mes-hall

Dynamical Coulomb Blockade as a Local Probe for Quantum Transport

Quantum fluctuations are imprinted with valuable information about transport processes. Experimental access to this information is possible, but challenging. We introduce the dynamical Coulomb blockade (DCB) as a local probe for fluctuations in a scanning tunneling microscope (STM) and show that it provides information about the conduction channels. In agreement with theoretical predictions, we find that the DCB disappears in a single-channel junction with increasing transmission following the Fano factor, analogous to what happens with shot noise. Furthermore we demonstrate local differences in the DCB expected from changes in the conduction channel configuration. Our experimental results are complemented by ab initio transport calculations that elucidate the microscopic nature of the conduction channels in our atomic-scale contacts. We conclude that probing the DCB by STM provides a technique complementary to shot noise measurements for locally resolving quantum transport characteristics.

cond-mat.mes-hall

Control of excitonic absorption by thickness variation in few-layer GaSe

We control the thickness of GaSe on the level of individual layers and study the corresponding optical absorption via highly sensitive differential transmission measurements. Suppression of excitonic transitions is observed when the number of layers is smaller than a critical value of 8. Through ab-initio modelling we are able to link this behavior to a fundamental change in the band structure that leads to the formation of a valence band shaped as an inverted Mexican hat in thin GaSe. The thickness-controlled modulation of the optical properties provides attractive resources for the development of functional optoelectronic devices based on a single material.

cond-mat.mes-hall

Large Conductance Variations in a Mechanosensitive Single-Molecule Junction

The appealing feature of molecular electronics is the possibility of exploiting functionality built within a single molecule. This functionality can be employed, for example, for sensing or switching purposes. Thus, ideally, the associated conductance changes should be sizable upon application of external stimuli. Here, we show that a molecular spring can be mechanically compressed or elongated to tune its conductance by up to an order of magnitude by controlling the quantum interference between electronic pathways. Oscillations in the conductance occur when the stress built up in the molecule is high enough to allow the anchoring groups to move along the surface in a stick-slip-like fashion. The mechanical control of quantum interference effects and the resulting large change in molecular conductance open the door for applications in, e.g., a minute mechanosensitive sensing device functional at room temperature.

cond-mat.mes-hall

Photocarrier thermalization bottleneck in graphene

We present an ab-initio study of photocarrier dynamics in graphene due to electron-phonon (EP) interactions. Using the Boltzmann relaxation-time approximation with parameters determined from density functional theory (DFT) and a complementary, explicitly solvable model we show that the photocarrier thermalization time changes by orders of magnitude, when the excitation energy is reduced from 1 eV to the 100 meV range. In detail, the ultrafast thermalization at low temperatures takes place on a femtosecond timescale via optical phonon emission, but slows down to picoseconds once excitation energies become comparable with these optical phonon energy quanta. In the latter regime, thermalization times exhibit a pronounced dependence on temperature. Our DFT model includes all the inter- and intraband transitions due to EP scattering. Thanks to the high melting point of graphene we extend our studies up to 2000~K and show that such high temperatures reduce the photocarrier thermalization time through phonon absorption.

cond-mat.mtrl-sci