arXiv subjects

Fabian Strauß

Publications and source records attributed to Fabian Strauß.

6 recordsLinked to original sources

arXiv2026

Intercalation of Alkali Metal into WTe2, the Crystal Structure of A0.5WTe2 and Observation of a Metal-to-Semiconductor Transition

We explore the cationic intercalation of tungsten ditelluride (WTe2) with potassium (K), rubidium (Rb), and cesium (Cs), yielding intercalation compounds of the form A0.5WTe2 (A = K, Rb, Cs). Structural characterization was performed using powder X-ray diffraction (PXRD), while diffuse reflectance infrared Fourier transform (DRIFT) spectroscopy and temperature-dependent conductivity measurements were employed to investigate the electronic properties. Density functional theory (DFT) calculations were carried out to support the experimental findings and to provide insight into the intercalation mechanisms and the resulting material characteristics. All synthesized compounds display semiconducting behavior with narrow band gaps, emphasizing the influence of alkali metal intercalation on the electronic structure and transport properties of WTe2. These results advance the fundamental understanding of property modulation in transition-metal dichalcogenides (TMDCs) and highlight their potential for electronic device applications.

cond-mat.mtrl-sci↗

arXiv2024

Electronic Structure and Transport in the Potential Luttinger Liquids CsNb$_3$Br$_7$S and RbNb$_3$Br$_7$S

The crystal structures of ANb$_3$Br$_7$S (A = Rb and Cs) have been refined by single crystal X-ray diffraction, and are found to form highly anisotropic materials based on chains of the triangular Nb$_3$ cluster core. The Nb$_3$ cluster core contains seven valence electrons, six of them being assigned to Nb-Nb bonds within the Nb$_3$ triangle and one unpaired d electron. The presence of this surplus electron gives rise to the formation of correlated electronic states. The connectivity in the structures is represented by one-dimensional [Nb$_3$Br$_7$S]$^-$ chains, containing a sulphur atom capping one face ($μ_3$) of the triangular niobium cluster, which is believed to induce an important electronic feature. Several types of studies are undertaken to obtain deeper insight into the understanding of this unusual type of material: the crystal structure, morphology and elastic properties are analysed, as well the (photo-) electrical properties and NMR relaxation. Electronic structure (DFT) calculations are performed in order to understand the electronic structure and transport in these compounds, and, based on the experimental and theoretical results, we propose that the electronic interactions along the Nb chains are sufficiently one-dimensional to give rise to Luttinger liquid (rather than Fermi liquid) behaviour of the metallic electrons.

cond-mat.str-el↗

arXiv2022

Pitfalls in Determining the Electrical Bandwidth of Non-Ideal Nanomaterials for Photodetection

The electrical 3 dB bandwidth is regularly used as a measure for the response speed of a photodetector and is estimated via various approaches in literature, ranging from direct measurements to gauged values via approximations. Great care must be taken when comparing these 3 dB bandwidths, since approximations are only strictly valid for ideal circuits. This paper demonstrates that, for typical photodetectors based on new emerging nanostructured materials, namely quantum dots and transition metal dichalcogenides, the bandwidth can deviate up to 10^3 depending on the chosen approach for the bandwidth specification.

cond-mat.mtrl-sci↗

arXiv2022

Substrate Effects on the Speed Limiting Factor of WSe$_2$ Photodetectors

We investigate the time-resolved photoelectric response of WSe$_2$ crystals on common glass and flexible polyimide substrates to determine the effect of the dielectric environment on the speed of the photodetectors. We show that varying the substrate material can alter the speed-limiting mechanism: while the detectors on polyimide are RC limited, those on glass are limited by slower excitonic diffusion processes. We attribute this to a shortening of the depletion layer at the metal electrode/WSe2 interface caused by the higher dielectric screening of glass compared to polyimide. The photodetectors on glass show a tunable bandwidth which can be increased to 2.6 MHz with increasing the electric field.

cond-mat.mtrl-sci↗

arXiv2021

Sub-ns intrinsic response time of PbS nanocrystal IR-photodetectors

Colloidal nanocrystals (NCs), especially lead sulfide NCs, are promising candidates for solution-processed next-generation photodetectors with high-speed operation frequencies. However, the intrinsic response time of PbS-NC photodetectors, which is the material-specific physical limit, is still elusive, as the reported response times are typically limited by the device geometry. Here, we use the two-pulse coincidence photoresponse technique to identify the intrinsic response time of 1,2-ethanedithiol-functionalized PbS-NC photodetectors after fs-pulsed 1560 nm excitation. We obtain an intrinsic response time of ~1 ns, indicating an intrinsic bandwidth of ~0.55 GHz as the material-specific limit. Examination of the dependence on laser power, gating, bias, temperature, channel length and environmental conditions suggest that Auger recombination, assisted by NC-surface defects, is the dominant mechanism. Accordingly, the intrinsic response time might further be tuned by specifically controlling the ligand coverage and trap states. Thus, PbS-NC photodetectors are feasible for gigahertz optical communication in the third telecommunication window.

cond-mat.mtrl-sci↗

arXiv2021

Substrate Effects on the Bandwidth of CdSe Quantum Dot Photodetectors

We investigate the time-resolved photocurrent response of CdSe quantum dot (QD) thin films sensitized with zinc beta-tetraaminophthalocyanine (Zn4APc) on three different substrates, namely silicon with 230 nm SiO2 dielectric, glass as well as polyimide. While Si/SiO2(230 nm) is not suitable for any transient photocurrent characterization due to an interfering photocurrent response of the buried silicon, we find that polyimide substrates invoke the larger optical bandwidth with 85 kHz vs. 67 kHz for the same quantum dot thin film on glass. Upon evaluation of the transient photocurrent, we find that the photoresponse of the CdSe quantum dot films can be described as a combination of carrier recombination and fast trapping within 2.7 ns, followed by slower multiple trapping events. The latter are less pronounced on polyimide, which leads to the higher bandwidth. We show that all devices are RC-time limited and that improvements of the photoresistance are the key to further increasing the bandwidth.

cond-mat.mes-hall↗