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Fabian Thiemann

Publications and source records attributed to Fabian Thiemann.

3 recordsLinked to original sources

MatterSim-MT: A multi-task foundation model for in silico materials characterization

Accurate property characterization is a major bottleneck in materials design. While first-principles methods and task-specific machine-learning models have driven important progress, they remain fundamentally limited in scalability and generalizability across the vast space of structures and properties relevant to real-world materials design. We present MatterSim-MT, a multi-task foundation model for in silico materials simulation and property characterization. The model is pretrained on over 35 million first-principles-labeled structures covering 89 elements, temperatures up to 5000 K and pressures up to 1000 GPa, and is fine-tuned on various properties including Bader charges, magnetic moments, Born effective charges, and dielectric matrices. Out of the box, MatterSim-MT not only serves as a foundation model for predicting material structure, dynamics and thermodynamics, its multi-task architecture also enables a wide range of complex simulations that cannot be captured by potential energy surfaces alone. For example, we demonstrate pressure-dependent LO-TO phonon splitting in SiC with close agreement with experiment, electric hysteresis in ferroelectric BaTiO3, and the cationic-to-anionic redox transition during delithiation of a Li-rich cathode material. Finally, we show that MatterSim-MT scales well with more data and parameters, can be efficiently fine-tuned to higher levels of theory, and can be efficiently extended to new systems via active learning. Overall, we believe this approach provides a scalable route to accurate in silico materials characterization.

cond-mat.mtrl-sci↗

Disentangling the Electronic and Lattice Contributions to the Dielectric Response of Photoexcited Bismuth

Elucidating the interplay between nuclear and electronic degrees of freedom that govern the complex dielectric behavior of materials under intense photoexcitation is essential for tailoring optical properties on demand. However, conventional transient reflectivity experiments have been unable to differentiate between real and imaginary components of the dielectric response, omitting crucial electron-lattice interactions. Utilizing thin film interference we unambiguously determined the photoinduced change in complex dielectric function in the Peierls semimetal bismuth and examined its dependence on the excitation density and nuclear motion of the A$_{1g}$ phonon. Our modeled transient reflectivity data reveals a progressive broadening and redshift of Lorentz oscillators with increasing excitation density and underscores the importance of both, electronic and nuclear coordinates in the renormalization of interband transitions.

cond-mat.mtrl-sci↗

Ultrafast transport mediated homogenization of photoexcited electrons governs the softening of the $A_\mathrm{1g}$ phonon in bismuth

In order to determine the role of non-thermal transport of hot carriers which is decisive for the dissipation of energy in condensed matter we performed time-resolved broadband femtosecond transient reflectivity measurements on $7-197 \mathrm{nm}$ thick Bi(111) films epitaxially grown on Si(111). We monitored the behavior of the Fourier amplitude and the central frequency of the coherent $A_\mathrm{1g}$ phonon mode as function of the incident fluence, film thickness, and probe wavelength in the range of $580 -700 \mathrm{nm}$. The frequency redshift that follows photoexcitation was used as a robust quantity to determine the effective distribution of excited carriers that governs the displacive excitation mechanism of coherent $A_\mathrm{1g}$ phonons in Bi. For Bi films up to $50 \mathrm{nm}$ thickness a homogeneous excitation due to the ultrafast transport of hot charge carriers is observed, limited by a carrier penetration depth of $60 \mathrm{nm}$ independent of the totally deposited laser energy.

cond-mat.mtrl-sci↗