arXiv subjects

Fachen Liu

Publications and source records attributed to Fachen Liu.

5 recordsLinked to original sources

arXiv2026

Nanoscale Thermal Imaging of Dislocation-Mediated Heat Transport

Dislocations in crystalline materials are widely exploited to tailor the thermal conductivity of semiconductors and thermoelectrics, yet a critical gap persists: direct measurement of local thermal resistance at individual buried dislocations, along with its spatial extent, remains elusive due to the limitations of conventional thermal probes. Here, we use in situ scanning transmission electron microscopy-electron energy-loss spectroscopy to map nanoscale temperature distributions across a low-angle SrTiO3 grain boundary with periodic dislocation arrays. Our results reveal a temperature drop of 47 K across the dislocation array. The associated temperature-field distortions are concentrated near the dislocation cores, consistent with stronger local thermal resistance at these discrete sites rather than a uniformly distributed resistance along the array. We further identify a distinct two-scale heat transport characteristic near the dislocation array: core-dominated effects over approximately 4.8-6.2 nm and extended inter-core influences over approximately 10.3-14.3 nm. Atomic-scale structural and vibrational analyses further reveal core-associated atomic reconstruction and localized optical-phonon perturbations, providing a microscopic basis for the stronger local thermal resistance inferred near dislocation cores. These findings quantitatively resolve spatial heterogeneity of dislocation-mediated heat transport, uncover its atomic-scale mechanism, and provide a quantitative basis for defect engineering, guiding the design of high-performance thermoelectrics, semiconductors, high-temperature structural alloys, and other functional crystalline materials.

cond-mat.mtrl-sci↗

arXiv2025

Single-dislocation phonons: atomic-scale measurement and their thermal properties

Nanoscale defects such as dislocations, have a significant impact on the phonon thermal transport properties in non-metallic materials. To unravel these effects, understanding of defect phonon modes is essential. Herein, at the atomic scale, the localized phonons of individual dislocation at a Si/Ge interface are measured via monochromated electron energy loss spectroscopy in a scanning transmission electron microscope. These modes are then correlated with the local microstructure, further revealing the dislocation effects on the local thermal transport properties. The dislocation causes phonon redshift in several milli-electron-volts within about two to four nanometers of the core, where both of the strain field and Ge-segregation play roles. With the presence of dislocation, the local interfacial thermal conductance can be either enhanced or reduced, depending on the complex interaction and competition between lattice-disorder (dislocation) and element-disorder (heterointerface mixing and Ge-segregation) at the interface. These findings provide valuable insights to improve the thermal properties of thermoelectric generators and thermal management systems through proper defect engineering.

cond-mat.mtrl-sci↗

arXiv2023

Atomic-scale mechanism of enhanced electron-phonon coupling at the interface of MgB$_2$ thin film

In this study, we explore the heterointerface of MgB$_2$ film on SiC substrate at atomic scale using electron microscopy and spectroscopy. We detect ~1 nm MgO between MgB$_2$ and SiC. Atomic-level electron energy loss spectra (EELS) show MgB$_2$-E2g mode splitting and softening near the MgB$_2$/MgO interface. Orbital-resolved core-level EELS link the phonon softening to in-plane boron-atom electron states' changes. Ab initio calculations confirm this softening enhances electron-phonon coupling at the interface. Our findings highlight interface engineering's potential for superconductivity enhancement.

cond-mat.supr-con↗

arXiv2023

Atomic-scale observation of localized phonons at FeSe/SrTiO3 interface

In single unit-cell FeSe grown on SrTiO3, the superconductivity transition temperature features a significant enhancement. Local phonon modes at the interface associated with electron-phonon coupling may play an important role in the interface-induced enhancement. However, such phonon modes have eluded direct experimental observations. Indeed, the complicated atomic structure of the interface brings challenges to obtain the accurate structure-phonon relation knowledge from either experiment or theory, thus hindering our understanding of the enhancement mechanism. Here, we achieve direct characterizations of atomic structure and phonon modes at the FeSe/SrTiO3 interface with atomically resolved imaging and electron energy loss spectroscopy in a scanning transmission electron microscope. We find several phonon modes highly localized (~1.3 nm) at the unique double layer Ti-O termination at the interface, one of which (~ 83 meV) engages in strong interactions with the electrons in FeSe based on ab initio calculations. The electron-phonon coupling strength for such a localized interface phonon with short-range interactions is comparable to that of Fuchs-Kliewer (FK) phonon mode with long-rang interactions. Thus, our atomic-scale study provides new insights into understanding the origin of superconductivity enhancement at the FeSe/SrTiO3 interface.

cond-mat.supr-con↗

arXiv2022

Phonon transition across an isotopic interface

Natural materials usually consist of isotopic mixtures, for which different isotopic ratios can lead to distinct material properties such as thermal conductivity and nucleation process. However, the knowledge of isotopic interface remains largely unexplored mainly due to the challenges in isotopic identification and property measurement at an atomic scale. Here, by using monochromated electron energy-loss spectroscopy in a scanning transmission electron microscope, we reveal momentum-transfer-dependent lattice vibration behavior at an artificial h-10BN/h-11BN heterostructure with sub-unit-cell resolution. We find the vibrational energy changes across the isotopic interface gradually, featuring a wide transition regime, which suggests strong delocalization of the out-of-plane optical phonons at the interface. In addition, we identify phonons near the Brillouin zone center have a transition regime ~3.34 nm (10 atomic layers), whereas phonons at the Brillouin zone boundary transition in ~1.66 nm (5 atomic layers). We propose that the isotope-induced charge effect at the interface accounts for the distinct delocalization behavior. Moreover, intra-atomic layer variation of vibration energy is also sensitive to the momentum transfer, thus at the interface it depends on both of momentum transfer and mass change. The revealed lattice vibration behavior at an isotopic interface provides new insights to understand the isotopic effects on properties in natural materials.

cond-mat.mtrl-sci↗