arXiv subjects

Famin Chen

Publications and source records attributed to Famin Chen.

5 recordsLinked to original sources

arXiv2025

Nonvolatile photoswitching of a Mott state via reversible stacking rearrangement

Nonvolatile control of the Mott transition is a central goal in correlated-electron physics, offering access to fascinating emergent states and great potential for technological applications. Compared to chemical or mechanical approaches, ultrafast optical excitation further promises a path to create and manipulate novel non-equilibrium phases with ultimate spatiotemporal precision. However, achieving a truly nonvolatile electronic phase transition in laser-excited Mott systems remains an elusive challenge. Here, we present a highly robust and reversible method for optical control of the Mott state in van der Waals systems. Specifically, using angle-resolved photoemission spectroscopy, we observe a nonvolatile Mott-to-metallic transition in the ultrafast laser-excited charge density wave (CDW) material 1T-TaSe2. Complementary theoretical calculations reveal that this transition originates from a rearrangement of the interlayer CDW stacking. This new stacking order, formed following the ultrafast quenching of the CDW, circumvents the need for large-scale atomic sliding. Intriguingly, it introduces a significant in-plane component to the electron hopping and effectively reduces the ratio of on-site Coulomb interaction to bandwidth, thereby suppressing the Mott state and stabilizing a metallic phase. Our results establish optical-control of interlayer stacking as a versatile strategy for inducing nonvolatile phase transitions, opening a new route to tailor correlated electronic phases and realize reconfigurable high-frequency devices.

cond-mat.str-el↗

arXiv2025

Relationship among Structural, Disordered, Magnetism and Band Topology in MnSb2Te4(Sb2Te3)n Family

Interplay between topology and magnetism induces various exotic quantum phenomena, with magnetic topological insulators (MTIs) serving as a prominent example due to their ability to host the quantum anomalous Hall effect (QAHE). However, the realization of QAHE at higher temperature approaching magnetic-transition-temperature remains a significant challenge, primarily due to the scarcity of suitable material platforms and limited understanding of the intricate relationships between band topology, magnetism, and defects. Here, we report a comprehensive investigation of MnSb2Te4(Sb2Te3)n (n = 0 - 5) single crystals, including the discovery of novel MnSb8Te13 pure phase. Experimental measurements confirm that MnSb8Te13 exhibits ferromagnetism and features topologically nontrivial electronic structures, characterized by a Dirac point located further from the conduction band and a possible larger bulk gap compared to MnBi2Te4(Bi2Te3)n (n = 0 - 3). Moreover, we systematically analyze the relationship between structure, magnetism, topology, and disorder within Mn(Sb, Bi)2Te4((Sb, Bi)2Te3)n family. Present work will shed light on the exploration of potential platforms capable of achieving QAHE near magnetic transition temperature, offering new directions for advancing topological quantum materials.

cond-mat.mtrl-sci↗

arXiv2024

Nonvolatile optical control of interlayer stacking order in 1T-TaS2

Nonvolatile optical manipulation of material properties on demand is a highly sought-after feature in the advancement of future optoelectronic applications. While the discovery of such metastable transition in various materials holds good promise for achieving this goal, their practical implementation is still in the nascent stage. Here, we unravel the nature of the ultrafast laser-induced hidden state in 1T-TaS2 by systematically characterizing the electronic structure evolution throughout the reversible transition cycle. We identify it as a mixed-stacking state involving two similarly low-energy interlayer orders, which is manifested as the charge density wave phase disruption. Furthermore, our comparative experiments utilizing the single-pulse writing, pulse-train erasing and pulse-pair control explicitly reveal the distinct mechanism of the bidirectional transformations -- the ultrafast formation of the hidden state is initiated by a coherent phonon which triggers a competition of interlayer stacking orders, while its recovery to the initial state is governed by the progressive domain coarsening. Our work highlights the deterministic role of the competing interlayer orders in the nonvolatile phase transition in the layered material 1T-TaS2, and promises the coherent control of the phase transition and switching speed. More importantly, these results establish all-optical engineering of stacking orders in low-dimensional materials as a viable strategy for achieving desirable nonvolatile electronic devices.

cond-mat.mtrl-sci↗

arXiv2024

Evidence for an Excitonic Insulator State in Ta$_2$Pd$_3$Te$_5$

The excitonic insulator (EI) is an exotic ground state of narrow-gap semiconductors and semimetals arising from spontaneous condensation of electron-hole pairs bound by attractive Coulomb interaction. Despite research on EIs dating back to half a century ago, their existence in real materials remains a subject of ongoing debate. In this study, through systematic experimental and theoretical investigations, we provide evidence for the existence of an EI ground state in a van der Waals compound Ta$_2$Pd$_3$Te$_5$. Density-functional-theory calculations suggest that it is a semimetal with a small band overlap, whereas various experiments exhibit an insulating ground state with a clear band gap. Upon incorporating electron-hole Coulomb interaction into our calculations, we obtain an EI phase where the electronic symmetry breaking opens a many-body gap. Angle-resolved photoemission spectroscopy measurements exhibit that the band gap is closed with a significant change in the dispersions as the number of thermally excited charge carriers becomes sufficiently large in both equilibrium and nonequilibrium states. Structural measurements reveal a slight breaking of crystal symmetry with exceptionally small lattice distortion in the insulating state, which cannot account for the significant gap opening. Therefore, we attribute the insulating ground state with a gap opening in Ta$_2$Pd$_3$Te$_5$ to exciton condensation, where the coupling to the symmetry-breaking electronic state induces a subtle change in the crystal structure.

cond-mat.mtrl-sci↗

arXiv2023

Time-resolved ARPES with probe energy of 6.0/7.2 eV and switchable resolution configuration

We present a detailed exposition of the design for time- and angle-resolved photoemission spectroscopy using a UV probe laser source that combines the nonlinear effects of \b{eta}-BaB2O4 and KBe2BO3F2 optical crystals. The photon energy of the probe laser can be switched between 6.0 and 7.2 eV, with the flexibility to operate each photon energy setting under two distinct resolution configurations. Under the fully optimized energy resolution configuration, we achieve an energy resolution of 8.5 meV at 6.0 eV and 10 meV at 7.2 eV. Alternatively, switching to the other configuration enhances temporal resolution, yielding a temporal resolution of 72 fs for 6.0 eV and 185 fs for 7.2 eV. We validated the performance and reliability of our system by applying it to measuring two typical materials: the topological insulator MnBi2Te4 and excitonic insulator candidate Ta2NiSe5.

cond-mat.mes-hall↗