arXiv subjects

Fang-Cheng Chou

Publications and source records attributed to Fang-Cheng Chou.

At least 19 recordsLinked to original sources

arXiv2025

Low-energy spin excitations in field-induced phases of the spin-ladder antiferromagnet BiCu$_2$PO$_6$

We report on terahertz spectroscopic measurements of quantum spin dynamics on single crystals of a spin-1/2 frustrated spin-ladder antiferromagnet BiCu$_2$PO$_6$ as a function of temperature, polarization, and applied external magnetic fields. Spin triplon excitations are observed at zero field and split in applied magnetic fields. For magnetic fields applied along the crystallographic $a$ axis, a quantum phase transition at $B_{c1}=21.4 \mathrm{T}$ is featured by a low-energy excitation mode emerging above $B_{c1}$ which indicates a gap reopening. For fields along the $b$ axis and the $c$ axis, different field dependencies are observed for the spin triplon excitations, whereas no low-lying modes could be resolved at field-induced phase transitions. We perform a theoretical analysis of the magnetic field dependence of the spin triplon modes by using continuous unitary transformations to determine an effective low energy Hamiltonian. Through an exhaustive parameter search we find numerically optimized parameters to very well describe the experimentally observed modes, which corroborate the importance of significant magnetic anisotropy in the system.

cond-mat.str-el↗

arXiv2024

Orbital Topology of Chiral Crystals for Orbitronics

Chirality is ubiquitous in nature and manifests in a wide range of phenomena including chemical reactions, biological processes, and quantum transport of electrons. In quantum materials, the chirality of fermions, given by the relative directions between the electron spin and momentum, is connected to the band topology of electronic states. Here, we show that in structurally chiral materials like CoSi, the orbital angular momentum (OAM) serves as the main driver of a nontrivial band topology in this new class of unconventional topological semimetals, even when spin-orbit coupling is negligible. A nontrivial orbital-momentum locking of multifold chiral fermions in the bulk leads to a pronounced OAM texture of the helicoid Fermi arcs at the surface. Our findings highlight the pivotal role of the orbital degree of freedom for the chirality and topology of electron states, in general, and pave the way towards the application of topological chiral semimetals in orbitronic devices.

cond-mat.mes-hall↗

arXiv2020

Ultralow Schottky Barriers in hBN-Encapsulated Monolayer WSe$_2$ Tunnel Field-Effect Transistors

To explore the potential of field-effect transistors (FETs) based on monolayers of the two-dimensional semiconducting channel(SC) for spintronics, the two most important issues are to ensure the formation of variable low resistive tunnel ferromagnetic contacts(FC), and to preserve intrinsic properties of the SC during fabrication. Large Schottky barriers lead to the formation of high resistive contacts and methods adopted to control the barriers often alter the intrinsic properties of the SC. This work aims at addressing both issues in fully encapsulated monolayer WSe$_2$ FETs by using bi-layer h-BN as a tunnel barrier at the FC/SC interface. We investigate the electrical transport in monolayer WSe$_2$ FETs with current-in-plane geometry that yields hole mobilities $\sim$ 38.3 $cm^{2}V^{-1}s^{-1}$ at 240 K and On/Off ratios of the order of 10$^7$, limited by the contact regions. We have achieved ultralow effective Schottky barrier ($\sim$ 5.34 meV) with encapsulated tunneling device as opposed to a non-encapsulated device in which the barrier heights are considerably higher. These observations provide an insight into the electrical behavior of the FC/h-BN/SC/h-BN heterostructures and such control over the barrier heights opens up the possibilities for WSe$_2$-based spintronic devices.

physics.app-ph↗

arXiv2020

Electron-Electron Interactions in 2D Semiconductor InSe

Electron-electron interactions (EEIs) in 2D van der Waals structures is one of the topics with high current interest in physics. We report the observation of a negative parabolic magnetoresistance (MR) in multilayer 2D semiconductor InSe beyond the low-field weak localization/antilocalization regime, and provide evidence for the EEI origin of this MR behavior. Further, we analyze this negative parabolic MR and other observed quantum transport signatures of EEIs (temperature dependent conductance and Hall coefficient) within the framework of Fermi liquid theory and extract the gate voltage tunable Fermi liquid parameter $F_0^σ$ which quantifies the electron spin-exchange interaction strength.

cond-mat.mes-hall↗

arXiv2019

Field-free platform for topological zero-energy mode in superconductors LiFeAs and PbTaSe$_2$

Superconducting materials exhibiting topological properties are emerging as an exciting platform to realize fundamentally new excitations from topological quantum states of matter. In this work, we explore the possibility of a field-free platform for generating Majorana zero energy excitations by depositing magnetic Fe impurities on the surface of candidate topological superconductors, LiFeAs and PbTaSe$_2$. We use scanning tunneling microscopy to probe localized states induced at the Fe adatoms on the atomic scale and at sub-Kelvin temperatures. We find that each Fe adatom generates a striking zero-energy bound state inside the superconducting gap, which do not split in magnetic fields up to 8T, underlining a nontrivial topological origin. Our findings point to magnetic Fe adatoms evaporated on bulk superconductors with topological surface states as a new platform for exploring Majorana zero modes and quantum information science under field-free conditions.

cond-mat.supr-con↗

arXiv2019

Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors

In 2D-semiconductor-based field-effect transistors and optoelectronic devices, metal-semiconductor junctions are one of the crucial factors determining device performance. The Fermi-level (FL) pinning effect, which commonly caused by interfacial gap states, severely limits the tunability of junction characteristics, including barrier height and contact resistance. A tunneling contact scheme has been suggested to address the FL pinning issue in metal-2D-semiconductor junctions, whereas the experimental realization is still elusive. Here, we show that an oxidized-monolayer-enabled tunneling barrier can realize a pronounced FL depinning in indium selenide (InSe) transistors, exhibiting a large pinning factor of 0.5 and a highly modulated Schottky barrier height. The FL depinning can be attributed to the suppression of metal- and disorder-induced gap states as a result of the high-quality tunneling contacts. Structural characterizations indicate uniform and atomically thin surface oxidation layer inherent from nature of van der Waals materials and atomically sharp oxide-2D-semiconductor interfaces. Moreover, by effectively lowering the Schottky barrier height, we achieve an electron mobility of 2160 cm$^2$/Vs and a contact barrier of 65 meV in two-terminal InSe transistors. The realization of strong FL depinning in high-mobility InSe transistors with the oxidized monolayer presents a viable strategy to exploit layered semiconductors in contact engineering for advanced electronics and optoelectronics.

cond-mat.mes-hall↗

arXiv2018

Precipitating Ordered Skyrmion Lattices from Helical Spaghetti

Magnetic skyrmions have been the focus of intense research due to their potential applications in ultra-high density data and logic technologies, as well as for the unique physics arising from their antisymmetric exchange term and topological protections. In this work we prepare a chiral jammed state in chemically disordered (Fe, Co)Si consisting of a combination of randomly-oriented magnetic helices, labyrinth domains, rotationally disordered skyrmion lattices and/or isolated skyrmions. Using small angle neutron scattering, (SANS) we demonstrate a symmetry-breaking magnetic field sequence which disentangles the jammed state, resulting in an ordered, oriented skyrmion lattice. The same field sequence was performed on a sample of powdered Cu2OSeO3 and again yields an ordered, oriented skyrmion lattice, despite relatively non-interacting nature of the grains. Micromagnetic simulations confirm the promotion of a preferred skyrmion lattice orientation after field treatment, independent of the initial configuration, suggesting this effect may be universally applicable. Energetics extracted from the simulations suggest that approaching a magnetic hard axis causes the moments to diverge away from the magnetic field, increasing the Dzyaloshinskii-Moriya energy, followed subsequently by a lattice re-orientation. The ability to facilitate an emergent ordered magnetic lattice with long-range orientation in a variety of materials despite overwhelming internal disorder enables the study of skyrmions even in imperfect powdered or polycrystalline systems and greatly improves the ability to rapidly screen candidate skyrmion materials.

cond-mat.mes-hall↗

arXiv2018

High-performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying-barrier-type Indium Electrodes

The electrical contact to two-dimensional (2D)-semiconductor materials are decisive to the electronic performance of 2D-semiconductor field-effect devices (FEDs). The presence of a Schottky barrier often leads to a large contact resistance, which seriously limits the channel conductance and carrier mobility measured in a two-terminal geometry. In contrast, ohmic contact is desirable and can be achieved by the presence of a nonrectifying or tunneling barrier. Here, we demonstrate that an nonrectifying barrier can be realized by contacting indium (In), a low work function metal, with layered InSe because of a favorable band alignment at the In-InSe interface. The nonrectifying barrier is manifested by ohmic contact behavior at T=2 K and a low barrier height, Φ$_B$=50 meV. This ohmic contact enables demonstration of an ON-current as large as 410 μA/μm, which is among the highest values achieved in FEDs based on layered semiconductors. A high electron mobility of 3,700 and 1,000 cm$^2$/Vs is achieved with the two-terminal In-InSe FEDs at T=2 K and room temperature, respectively, which can be attributed to enhanced quality of both conduction channel and the contacts. The improvement in the contact quality is further proven by an X-ray photoelectron spectroscopy study, which suggests that a reduction effect occurs at the In-InSe interface. The demonstration of high-performance In-InSe FEDs indicates a viable interface engineering method for next-generation, 2D-semiconductor-based electronics.

cond-mat.mes-hall↗

arXiv2018

Topological Type-II Dirac Fermions Approaching the Fermi Level in a Transition Metal Dichalcogenide NiTe2

Type-II Dirac/Weyl semimetals are characterized by strongly tilted Dirac cones such that the Dirac/Weyl node emerges at the boundary of electron and hole pockets as a new state of quantum matter, distinct from the standard Dirac/Weyl points with a point-like Fermi surface which are referred to as type-I nodes. The type-II Dirac fermions were recently predicted by theory and have since been confirmed in experiments in the PtSe2-class of transition metal dichal-cogenides. However, the Dirac nodes observed in PtSe2, PdTe2 and PtTe2 candidates are quite far away from the Fermi level, making the signature of topological fermions obscure as the physical properties are still dominated by the non-Dirac quasiparticles. Here we report the synthesis of a new type-II Dirac semimetal NiTe2 in which a pair of type-II Dirac nodes are located very close to the Fermi level. The quantum oscillations in this material reveal a nontrivial Berry's phase associated with these Dirac fermions. Our first principles calculations further unveil a topological Dirac cone in its surface states. Therefore, NiTe2 may not only represent an improved system to formulate the theoretical understanding of the exotic consequences of type-II Dirac fermions, it also facilitates possible applications based on these topological carriers.

cond-mat.str-el↗

arXiv2018

Tuning Rashba Spin-Orbit Coupling in Gated Multilayer InSe

Manipulating the electron spin with the aid of spin-orbit coupling (SOC) is an indispensable element of spintronics. Electrostatically gating a material with strong SOC results in an effective magnetic field which can in turn be used to govern the electron spin. In this work, we report the existence and electrostatic tunability of Rashba SOC in multilayer InSe. We observed a gate-voltage-tuned crossover from weak localization (WL) to weak antilocalization (WAL) effect in quantum transport studies of InSe, which suggests an increasing SOC strength. Quantitative analyses of magneto-transport studies and energy band diagram calculations provide strong evidence for the predominance of Rashba SOC in electrostatically gated InSe. Furthermore, we attribute the tendency of the SOC strength to saturate at high gate voltages to the increased electronic density of states-induced saturation of the electric field experienced by the electrons in the InSe layer. This explanation of nonlinear gate voltage control of Rashba SOC can be generalized to other electrostatically gated semiconductor nanomaterials in which a similar tendency of spin-orbit length saturation was observed (e.g. nanowire field effect transistors), and is thus of broad implications in spintronics. Identifying and controlling the Rashba SOC in InSe may serve pivotally in devising III-VI semiconductor-based spintronic devices in the future.

cond-mat.mes-hall↗

arXiv2018

Improper Ferroelectric Polarisation in a Perovskite driven by Inter-site Charge Transfer and Ordering

It is of great interest to design and make materials in which ferroelectric polarisation is coupled to other order parameters such as lattice, magnetic and electronic instabilities. Such materials will be invaluable in next-generation data storage devices. Recently, remarkable progress has been made in understanding improper ferroelectric coupling mechanisms that arise from lattice and magnetic instabilities. However, although theoretically predicted, a compact lattice coupling between electronic and ferroelectric (polar) instabilities has yet to be realised. Here we report detailed crystallographic studies of a novel perovskite Hg$^{\textbf{A}}$Mn$^{\textbf{A'}}_{3}$Mn$^{\textbf{B}}_{4}$O$_{12}$ that is found to exhibit a polar ground state on account of such couplings that arise from charge and orbital ordering on both the A' and B-sites, which are themselves driven by a highly unusual Mn$^{A'}$-Mn$^B$ inter-site charge transfer. The inherent coupling of polar, charge, orbital and hence magnetic degrees of freedom, make this a system of great fundamental interest, and demonstrating ferroelectric switching in this and a host of recently reported hybrid improper ferroelectrics remains a substantial challenge.

cond-mat.str-el↗

arXiv2017

Quasiparticle Interference in ZrSiS - Strongly Band-Selective Scattering Depending on Impurity Lattice Site

Scanning tunneling microscopy visualizations of quasiparticle interference (QPI) enable powerful insights into the k-space properties of superconducting, topological, Rashba and other exotic electronic phases, but their reliance on impurities acting as scattering centers is rarely scrutinized. Here we investigate QPI at the vacuum-cleaved (001) surface of the Dirac semimetal ZrSiS. We find that interference patterns around impurities located on the Zr and S lattice sites appear very different, and can be ascribed to selective scattering of different sub-sets of the predominantly Zr 4d-derived band structure, namely the m = 0 and m = +/-1 components. We show that the selectivity of scattering channels requires an explanation beyond the different bands' orbital characteristics and their respective charge density distributions over Zr and S lattices sites. Importantly, this result shows that the usual assumption of generic scattering centers allowing observations of quasiparticle interference to shed light indiscriminately and isotropically upon the \textit{q}-space of scattering events does not hold, and that the scope and interpretation of QPI observations can therefore be be strongly contingent on the material defect chemistry. This finding promises to spur new investigations into the quasiparticle scattering process itself, to inform future interpretations of quasiparticle interference observations, and ultimately to aid the understanding and engineering of quantum electronic transport properties.

cond-mat.mtrl-sci↗

arXiv2017

Anomalous Acoustic Plasmon Mode from Topologically Protected States

Plasmons, the collective excitations of electrons in the bulk or at the surface, play an important role in the properties of materials, and have generated the field of Plasmonics. We report the observation of a highly unusual acoustic plasmon mode on the surface of a three-dimensional topological insulator (TI), Bi2Se3, using momentum resolved inelastic electron scattering. In sharp contrast to ordinary plasmon modes, this mode exhibits almost linear dispersion into the second Brillouin zone and remains prominent with remarkably weak damping not seen in any other systems. This behavior must be associated with the inherent robustness of the electrons in the TI surface state, so that not only the surface Dirac states but also their collective excitations are topologically protected. On the other hand, this mode has much smaller energy dispersion than expected from a continuous media excitation picture, which can be attributed to the strong coupling with surface phonons.

cond-mat.mtrl-sci↗

arXiv2017

Observation of surface superstructure induced by systematic vacancies in the topological Dirac semimetal Cd$_{3}$As$_{2}$

The Dirac semimetal phase found in Cd$_{3}$As$_{2}$ is protected by a $C_{4}$ rotational symmetry derived from a corkscrew arrangement of systematic Cd vacancies in its complicated crystal structure. It is therefore surprising that no microscopic observation, direct or indirect, of these systematic vacancies has so far been described. To this end, we revisit the cleaved (112) surface of Cd$_{3}$As$_{2}$ using a combined approach of scanning tunneling microscopy and \textit{ab initio} calculations. We determine the exact position of the (112) plane at which Cd$_{3}$As$_{2}$ naturally cleaves, and describe in detail a structural periodicity found at the reconstructed surface, consistent with that expected to arise from the systematic Cd vacancies. This reconciles the current state of microscopic surface observations with those of crystallographic and theoretical models, and demonstrates that this vacancy superstructure, central to the preservation of the Dirac semimetal phase, survives the cleavage process and retains order at the surface.

cond-mat.mtrl-sci↗

arXiv2017

Screening limited switching performance of multilayer 2D semiconductor FETs: the case for SnS

Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane conductance and room temperature field effect mobilities ~5 - 10 cm$^2$/Vs. However, the devices showed appreciable OFF state conductance and an ON-OFF ratio ~10 at room temperature. The weak gate tuning behavior in the depletion regime of SnS devices is explained by the finite carrier screening length effect which causes the existence of a conductive surface layer from intrinsic defects induced holes in SnS. Through etching and n-type surface doping by Cs2CO3 to reduce/compensate the not-gatable holes near SnS flake's top surface, the devices gained an order of magnitude improvement in the ON-OFF ratio and hole Hall mobility ~ 100 cm$^2$/Vs at room temperature is observed. This work suggests that in order to obtain effective switching and low OFF state power consumption, two-dimensional (2D) semiconductor based depletion mode FETs should limit their thickness to within the Debye screening length of carriers in the semiconductor.

cond-mat.mes-hall↗

arXiv2015

Single crystal growth and physical property characterization of PbTaSe2 as a noncentrosymmetric type-II superconductor

The single crystal growth and superconducting properties of PbTaSe2 with non-centrosymmetric crystal structure is reported. Using the chemical vapor transport (CVT) technique, PbTaSe2 crystallizes in a layered structure and the crystal symmetry has been shown belonging to a non-centrosymmetric space group P6-m2 confirmed by the consistent band picture near the Fermi level between the angle-resolved photoemission spectrum (ARPES) and theoretical calculations. Superconductivity with Tc =3.83 K has been characterized fully with electrical resistivity \r{ho}(T), magnetic susceptibility \c{hi}(T), and specific heat C(T) measurements using single crystal samples. The superconducting anisotropy, electron-phonon coupling λep, superconducting energy gap Δ0, and the specific heat jump ΔC/λTc at Tc confirms that PbTaSe2 can be categorized as a weakly coupled type-II superconductor.

cond-mat.supr-con↗

arXiv2015

Mechanism responsible for initiating room temperature ferromagnetism and spin polarized current in diluted magnetic oxides

The main obstacles in realizing diluted magnetic oxide (DMO) in spintronics are the unknown electronic structures associated with its high TC ferromagnetism and spin polarized current and how to manipulate desired electronic structures by fabrication techniques. We demonstrate that fine-tuned electronic structures and band structures can be modified to initiate DMO properties. Interestingly, in the semiconducting state, the doped Co ions and oxygen vacancies contribute non-negligible magnetic moments; and the magnetic coupling between these moments is mediated by the localized carriers via highly spin polarized hopping transport. These results unravel the myth of the origin of spintronic characteristics with desirable electronic states; thereby reopening the door for future applications.

cond-mat.mtrl-sci↗

arXiv2015

Observation of Fermi Arc Surface States in a Topological Metal: A New Type of 2D Electron Gas beyond Z2 Topological Insulators

In a topological insulator, it is the electrons on the surface or edge that carry the signature of topology. Recently, a novel topological state has been proposed in metals or semimetals (gapless) whose band-structure is similar to that of a three-dimensional analog of graphene. However, to this date the signature of its topology remains an open question. We report the experimental discovery of a pair of polarized Fermi arc surface state modes in the form of a new type of two-dimensional polarized electron gas on the surfaces of Dirac semimetals. These Fermi arc surface states (FASS) are observed to connect across an even number of bulk band gapless nodes and found to have their spin uniquely locked to their momentum. We show that these states are distinctly different from the topological surface states (TSS) seen in all known topological insulators. Our observed exotic two-dimensional states not only uncover the novel topology of gapless Dirac metals (such as sodium tribismuth Na$_3$Bi) but also opens new research frontiers for the utilization of topological Fermi arc electron gases for a wide range of fundamental physics and spintronic studies.

cond-mat.mes-hall↗