arXiv subjects

Fang-Ming Jing

Publications and source records attributed to Fang-Ming Jing.

7 recordsLinked to original sources

arXiv2025

Electric-field independent spin-orbit coupling gap in hBN-encapsulated bilayer graphene

The weak spin-orbit coupling (SOC) in bilayer graphene (BLG) is essential for encoding spin qubits while bringing technical challenges for extracting the opened small SOC gap Δ_SO in experiments. Moreover, in addition to the intrinsic Kane-Mele term, extrinsic mechanisms also contribute to SOC in BLG, especially under experimental conditions including encapsulation of BLG with hexagonal boron nitride (hBN) and applying an external out-of-plane electric displacement field D. Although measurements of Δ_SO in hBN-encapsulated BLG have been reported, the relatively large experimental variations and existing experimental controversy make it difficult to fully understand the physical origin of Δ_SO. Here, we report a combined experimental and theoretical study on Δ_SO in hBN-encapsulated BLG. We use an averaging method to extract Δ_SO in gate-defined single quantum dot devices. Under D fields as large as 0.57-0.90 V/nm, Δ_SO=53.4-61.8 μeV is obtained from two devices. Benchmarked with values reported at lower D field regime, our results support a D field-independent Δ_SO. This behavior is confirmed by our first-principle calculations, based on which Δ_SO is found to be independent of D field, regardless of different hBN/BLG/hBN stacking configurations. Our calculations also suggest a weak proximity effect from hBN, indicating that SOC in hBN-encapsulated BLG is dominated by the intrinsic Kane-Mele mechanism. Our results offer insightful understandings of SOC in BLG, which benefit SOC engineering and spin manipulations in BLG.

cond-mat.mes-hall↗

arXiv2025

Switching spin filling sequence in a bilayer graphene quantum dot through trigonal warping

We demonstrate a switchable electron shell structure in a bilayer graphene quantum dot by manipulating the trigonal warping effect upon electrical gating. Under a small perpendicular electric field, the lowest s-shell is sequentially filled with two spin-up and two spin-down electrons of opposite valleys. When increasing the electric field, an additional three-fold minivalley degeneracy is generated so that the s-shell can be filled with 12 electrons with the first/last 6 electrons having the same spin polarization. The switched spin filling sequence demonstrates the possibility of using the trigonal warping effect to electrically access and manipulate the spin degree of freedom in bilayer graphene.

cond-mat.mes-hall↗

arXiv2023

Tunable p-n junction barriers in few-electron bilayer graphene quantum dots

Graphene quantum dots provide promising platforms for hosting spin, valley, or spin-valley qubits. Taking advantage of the electrically generated band gap and the ambipolar nature, high-quality quantum dots can be defined in bilayer graphene using natural p-n junctions as tunnel barriers. In these devices, demonstrating the electrical tunability of the p-n junction barriers and understanding its physical mechanism, especially in the few-electron regime, are essential for further manipulating electron's quantum degrees of freedom to encode qubits. Here, we show the electrostatic confinement of single quantum dots in bilayer graphene using natural p-n junctions. When the device is operated in the few-electron regime, the electron tunneling rate is found to be monotonically tuned by varying gate voltages, which can be well understood from the view of manipulating the p-n junction barriers. Our results provide an insightful understanding of electrostatic confinement using natural p-n junctions in bilayer graphene, which is beneficial for realizing graphene-based qubits.

cond-mat.mes-hall↗

arXiv2022

Gate-Controlled Quantum Dots Based on Two-Dimensional Materials

Two-dimensional (2D) materials are a family of layered materials exhibiting rich exotic phenomena, such as valley-contrasting physics. Down to single-particle level, unraveling fundamental physics and potential applications including quantum information processing in these materials attracts significant research interests. To unlock these great potentials, gate-controlled quantum dot architectures have been applied in 2D materials and their heterostructures. Such systems provide the possibility of electrical confinement, control, and manipulation of single carriers in these materials. In this review, efforts in gate-controlled quantum dots in 2D materials are presented. Following basic introductions to valley degree of freedom and gate-controlled quantum dot systems, the up-to-date progress in etched and gate-defined quantum dots in 2D materials, especially in graphene and transition metal dichalcogenides, is provided. The challenges and opportunities for future developments in this field, from views of device design, fabrication scheme, and control technology, are discussed. The rapid progress in this field not only sheds light on the understanding of spin-valley physics, but also provides an ideal platform for investigating diverse condensed matter physics phenomena and realizing quantum computation in the 2D limit.

cond-mat.mes-hall↗

arXiv2021

Transverse mode-encoded quantum gate on a silicon photonic chip

As an important degree of freedom (DoF) in integrated photonic circuits, the orthogonal transverse mode provides a promising and flexible way to increasing communication capability, for both classical and quantum information processing. To construct large-scale on-chip multimode multi-DoF quantum systems, a transverse mode-encoded controlled-NOT (CNOT) gate is necessary. Here, through design and integrate transverse mode-dependent directional coupler and attenuators on a silicon photonic chip, we demonstrate the first multimode implementation of a two-qubit quantum gate. With the aid of state preparation and analysis parts, we show the ability of the gate to entangle two separated transverse mode qubits with an average fidelity of $0.89\pm0.02$ and the achievement of 10 standard deviations of violations in the quantum nonlocality verification. In addition, a fidelity of $0.82\pm0.01$ was obtained from quantum process tomography used to completely characterize the CNOT gate. Our work paves the way for universal transverse mode-encoded quantum operations and large-scale multimode multi-DoF quantum systems.

quant-ph↗

arXiv2020

Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot

In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that with a valley splitting of 78.2 ${\pm}$ 1.6 $μ$eV, this hot spot in spin relaxation can be suppressed by more than 2 orders of magnitude when the in-plane magnetic field is oriented at an optimal angle, about 9° from the [100] sample plane. This directional anisotropy exhibits a sinusoidal modulation with a 180° periodicity. We explain the magnitude and phase of this modulation using a model that accounts for both spin-valley mixing and intravalley spin-orbit mixing. The generality of this phenomenon is also confirmed by tuning the electric field and the valley splitting up to 268.2 ${\pm}$ 0.7 $μ$eV.

cond-mat.mes-hall↗

arXiv2020

Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing

To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the Si/SiO2 interface. However, the importance of activation annealing is usually ignored. Here, we show that a high vacuum environment for implantation activation is beneficial for improving mobility compared to nitrogen atmosphere. Low-temperature transport measurements of Hall bars show that peak mobility can be improved by a factor of two, reaching 1.5 m^2/(Vs) using high vacuum annealing during implantation activation. Moreover, the charge stability diagram of a single quantum dot is mapped, with no visible disturbance caused by disorder, suggesting possibility of fabricating high-quality quantum dots on commercial wafers. Our results may provide valuable insights into device optimization in silicon-based quantum computing.

cond-mat.mes-hall↗