arXiv subjects

Fangdong Tang

Publications and source records attributed to Fangdong Tang.

8 recordsLinked to original sources

arXiv2025

Semiconducting behaviors at epitaxial Ca0.5TaO3 interfaces

Emergent phenomena take place in symmetry-breaking systems, notably the recently discovered two-dimensional electron gas and its tunable superconductivities near the KTaO3 interfaces. Here, we synthesized perovskite Ca0.5TaO3 films along both [001] and [111] orientations. Different from the KTaO3 system, Ca0.5TaO3 films show semiconducting behaviors when capped with LaAlO3 films in both [001] and [111] orientations. By growing films at higher temperatures, more oxygen vacancies can be introduced, and the carrier density can be tuned from ~ 1014 cm-2 to ~ 1016 cm-2. Another difference is that the superconducting transition temperature Tc in KTaO3 (111) increases linearly along with its carrier density, while the Ca0.5TaO3 (111) remains semiconducting when carrier density ranges from ~ 1014 cm-2 to ~ 1016 cm-2. Based on the density function theory calculation, Ca0.5TaO3 and KTaO3 show similar electronic band structures. According to the energy-dispersive X-ray spectroscopy, we found heavy Sr diffusion from the substrate to the Ca0.5TaO3 layer, which may destroy the interfacial conductivity. Our work demonstrates that besides the oxygen vacancies, electronic transport is sensitive to the atomic intermixing near the interface in tantulates.

cond-mat.mtrl-sci↗

arXiv2024

Ferromagnetism and structural phase transition in monoclinic FeGe film

Binary compound FeGe hosts multiple structures, from cubic and hexagonal to monoclinic. Compared to the well-known skyrmion lattice in the cubic phase and the antiferromagnetic charge-density wave in the hexagonal phase, the monoclinic FeGe is less explored. Here, we synthesized the monoclinic FeGe films on Al2O3 (001) and studied their structural, magnetic, and transport properties. X-ray diffraction and transmission electron microscopy characterizations indicate that the FeGe films are epitaxial to the substrate. Unlike the antiferromagnetic bulk, the monoclinic FeGe films are ferromagnetic with Curie-temperature as high as ~ 800 K, contributing to the anomalous Hall effect in the transport measurements. Similar to the hexagonal FeGe, we captured a structural phase transition in the monoclinic FeGe films at ~ 100 K in real and reciprocal spaces by transmission electron microscope. Our work enriches the phase diagram of the FeGe family and suggests that FeGe offers an ideal platform for studying multiphase transitions and related device applications.

cond-mat.mtrl-sci↗

arXiv2023

Gate-tuned ambipolar superconductivity with strong pairing interaction in intrinsic gapped monolayer 1T'-MoTe2

Gate tunable two-dimensional (2D) superconductors offer significant advantages when studying superconducting phase transitions. Here, we address superconductivity in exfoliated 1T'-MoTe2 monolayers with an intrinsic band gap of ~7.3 meV using electrostatic doping. Despite large differences in the dispersion of the conduction and the valence bands, superconductivity can be achieved easily for both electrons and holes. The onset of superconductivity occurs near 7-8K for both charge carrier types. This temperature is much higher than in bulk samples. Also the in-plane upper critical field is strongly enhanced and exceeds the BCS Pauli limit in both cases. Gap information is extracted using point-contact spectroscopy. The gap ratio exceeds multiple times the value expected for BCS weak-coupling. All these observations suggest a strong enhancement of the pairing interaction.

cond-mat.supr-con↗

arXiv2022

Thermal transport properties and some hydrodynamic-like behavior in 3D topological semimetal ZrTe5

Hydrodynamic fluidity in condensed matter physics has been experimentally demonstrated only in a limited number of compounds due to the stringent conditions that must be met. Herein, we performed thermal and electrical transport experiments in three-dimensional topological semimetal ZrTe5. By measuring the thermal properties in a wide temperature range, two representative experimental evidences of the hydrodynamics are observed in temperature window between the ballistic and diffusive regimes: a faster evolution of the thermal conductivity than in the ballistic regime and the non-monotonic temperature-dependent effective quasiparticle mean-free-path. In addition, magneto-thermal conductivity results indicate that charged quasiparticles, as well as phonons, may also play an important role in this hydrodynamic-like flow in ZrTe5.

cond-mat.str-el↗

arXiv2021

Quantum transport properties of beta-Bi4I4 near and well beyond the extreme quantum limit

We have investigated the magneto-transport properties of beta-Bi4I4 bulk crystal, which was recently theoretically proposed and experimentally demonstrated to be a topological insulator. At low temperature T and magnetic field B, a series of Shubnikov-De Haas(SdH) oscillations are observed on the magnetoresistivity (MR). The detailed analysis reveals a light cyclotron mass of 0.1 me, and the field angle dependence of MR reveals that the SdH oscillations originate from a convex Fermi surface. In the extreme quantum limit (EQL) region, there is a metal-insulator transition occurring soon after the EQL. We perform the scaling analysis, and all the isotherms fall onto a universal scaling with a fitted critical exponent of 6.5. The enormous value of critical exponent implies this insulating quantum phase originated from strong electron-electron interactions in high fields. However, in the far end of EQL, both the longitudinal and Hall resistivity increase exponentially with B, and the temperature dependence of the MR reveals an energy gap induced by the high magnetic field, signifying a magnetic freeze-out effect. Our findings indicate that bulk beta-Bi4I4 is an excellent candidate for a 3D topological system for exploring EQL physics and relevant exotic quantum phases.

cond-mat.mtrl-sci↗

arXiv2020

Approaching Three-Dimensional Quantum Hall effect in Bulk HfTe5

The discovery of quantum Hall effect in two-dimensional (2D) electronic systems inspired the topological classifications of electronic systems1,2. By stacking 2D quantum Hall effects with interlayer coupling much weaker than the Landau level spacing, quasi-2D quantum Hall effects have been experimentally observed3~7, due to the similar physical origin of the 2D counterpart. Recently, in a real 3D electronic gas system where the interlayer coupling is much stronger than the Landau level spacing, 3D quantum Hall effect has been observed in ZrTe58. In this Letter, we report the electronic transport features of its sister bulk material, i.e., HfTe5, under external magnetic field. We observe a series of plateaus in Hall resistance \r{ho}xy as magnetic field increases until it reaches the quantum limit at 1~2 Tesla. At the plateau regions, the longitudinal resistance \r{ho}xx exhibits local minima. Although \r{ho}xx is still nonzero, its value becomes much smaller than \r{ho}xy at the last few plateaus. By mapping the Fermi surface via measuring the Shubonikov-de Haas oscillation, we find that the strength of Hall plateau is proportional to the Fermi wavelength, suggesting that its formation may be attributed to the gap opening from the interaction driven Fermi surface instability. By comparing the bulk band structures of ZrTe5 and HfTe5, we find that there exists an extra pocket near the Fermi level of HfTe5, which may lead to the finite but nonzero longitudinal conductance.

cond-mat.mtrl-sci↗

arXiv2018

Three-dimensional quantum Hall effect and metal-insulator transition in ZrTe5

Symmetry, dimensionality, and interaction are crucial ingredients for phase transitions and quantum states of matter. As a prominent example, the integer quantum Hall effect (QHE) represents a topological phase generally regarded as characteristic for two-dimensional (2D) electronic systems, and its many aspects can be understood without invoking electron-electron interaction. The intriguing possibility of generalizing QHE to three-dimensional (3D) systems was proposed decades ago, yet it remains elusive experimentally. Here, we report clear experimental evidence for the 3D QHE observed in bulk ZrTe5 crystals. Owing to the extremely high sample quality, the extreme quantum limit with only the lowest Landau level occupied can be achieved by an applied magnetic field as low as 1.5 T. Remarkably, in this regime, we observe a dissipationless longitudinal resistivity rho_xx=0 accompanied with a well-developed Hall resistivity plateau rho_xy=(1\pm0.1) h/e^2 (λ_(F,z)/2), where λ_(F,z) is the Fermi wavelength along the field direction (z axis). This striking result strongly suggests a Fermi surface instability driven by the enhanced interaction effects in the extreme quantum limit. In addition, with further increasing magnetic field, both rho_xx and rho_xy increase dramatically and display an interesting metal-insulator transition, representing another magnetic field driven quantum phase transition. Our findings not only unambiguously reveal a novel quantum state of matter resulting from an intricate interplay among dimensionality, interaction, and symmetry breaking, but also provide a promising platform for further exploration of more exotic quantum phases and transitions in 3D systems.

cond-mat.mtrl-sci↗

arXiv2018

Multi-carrier transport in ZrTe5 film

The single layer of Zirconium pentatelluride (ZrTe5) has been predicted to be a large-gap two-dimensional (2D) topological insulator, which has attracted particular attention in the topological phase transitions and potential device application. Here we investigated the transport properties in ZrTe5 films with the dependence of thickness from a few nm to several hundred nm. We find that the temperature of the resistivity anomaly's peak (Tp) is inclining to increase as the thickness decreases, and around a critical thickness of ~40 nm, the dominating carriers in the films change from n-type to p-type. With comprehensive studying of the Shubnikov-de Hass (SdH) oscillations and Hall resistance at variable temperatures, we demonstrate the multi-carrier transport instinct in the thin films. We extract the carrier densities and mobilities of two majority carriers using the simplified two-carrier model. The electron carriers can be attributed to the Dirac band with a non-trivial Berry's phase π, while the hole carriers may originate from the surface chemical reaction or unintentional doping during the microfabrication process. It is necessary to encapsulate ZrTe5 film in the inert or vacuum environment to make a substantial improvement in the device quality.

cond-mat.mes-hall↗