arXiv subjects

Fanghao Zhang

Publications and source records attributed to Fanghao Zhang.

8 recordsLinked to original sources

arXiv2026

Slow Thermalization and Long-Lived Coherence across Acoustic Phonon Branches in BAs

The exceptionally high thermal conductivity of cubic boron arsenide (BAs) arises from suppressed three-phonon scattering associated with its large acoustic--optical gap. In this regime, four-phonon processes become non-negligible, creating an unusual scattering hierarchy with unexplored consequences for nonequilibrium phonon dynamics. Here, time-resolved x-ray diffuse scattering reveals exceptionally slow, branch-dependent acoustic phonon thermalization and long-lived coherence. Exploiting branch sensitivity in one-phonon diffuse scattering, we resolve transverse acoustic (TA) and longitudinal acoustic (LA) thermalization times of 29.2 and 13.9~ps, respectively; even the LA timescale is at least three times that in common semiconductors. Phonon dispersion calculations assign coherent oscillations at 0.19 and 0.27~THz to the TA and LA modes, respectively; both persist with little decay over 50~ps, with comparable coherence found only in diamond. These findings provide a direct dynamical manifestation of the weak phonon scattering underlying the exceptional thermal transport of BAs.

cond-mat.mtrl-sci↗

arXiv2026

Reversible Modulation of Thermal Conductivity in GaN through Strain-Field Screening around Dislocations

Crystalline defects are generally regarded as static phonon scatterers that irreversibly suppress thermal transport. Here we show that elastic strain can reversibly modify dislocation-associated strain fields and strongly alter heat conduction. Using in situ strain-dependent time-domain thermoreflectance measurements, we observe a reversible enhancement of thermal conductivity in GaN by 23% under only 0.21% uniaxial strain. High-resolution X-ray diffraction reveals progressive narrowing of the symmetric (0002) reflection, indicating a reduction in the distribution of lattice rotations and heterogeneous strain. High-resolution electron backscatter diffraction directly shows that the spatial autocorrelations of multiple strain components decay over progressively shorter distances with applied strain, providing real-space evidence for enhanced screening of long-range strain fields. Raman spectroscopy further shows a non-monotonic evolution of the $E_{2}^{\mathrm{high}}$ phonon linewidth near the onset of the thermal-conductivity increase. Together, these results support a picture in which elastic strain reversibly reconfigures pinned dislocation lines and shortens the spatial range of their heterogeneous strain fields, thereby reducing phonon scattering. Our work establishes defect-associated strain correlations as a tunable degree of freedom for controlling thermal transport in crystalline solids.

cond-mat.mtrl-sci↗

arXiv2026

Magnetic Polarons Enable Exceptional Magnetocaloric Response

Magnetocaloric materials are typically limited by a trade-off between magnetic entropy and field responsiveness. Here we show that magnetic polarons provide an intermediate regime that mitigates this constraint and enables an exceptional magnetocaloric response. Using EuB$_6$ as a model system, we combine thermodynamic and magnetic measurements to demonstrate that nanoscale ferromagnetic clusters emerging near the Curie temperature strongly enhance the field-induced entropy collapse. These clusters possess large effective moments that respond efficiently to applied fields while retaining substantial entropy due to their small size and dynamic fluctuations. As a result, EuB$_6$ exhibits a giant cryogenic magnetocaloric response, with both large isothermal entropy change and adiabatic temperature change in the technologically important 10-40 K range. Our results identify magnetic polarons as an underexplored route for optimizing magnetocaloric performance and establish an intermediate magnetic length scale as a design principle for high-performance cryogenic cooling materials.

cond-mat.mtrl-sci↗

arXiv2025

Electric-Field-Dependent Thermal Conductivity in Fresh and Aged Bulk Single Crystalline $\mathrm{BaTiO_3}$

Active thermal management requires advances in thermal switching materials, whose thermal conductivity responds to external stimuli. The electric field, as one of the most convenient and effective stimuli, has shown great potential in tuning the thermal conductivity of ferroelectric materials. While previous studies on electric-field-induced ferroelectric thermal switching have primarily focused on thin films and bulk solid solutions with strong extrinsic interface and defect scatterings, bulk single crystals, which can offer clear insights into intrinsic thermal switching mechanisms, have received comparatively less attention. Here, we demonstrate electric-field-induced thermal switching in bulk single-crystalline $\mathrm{BaTiO_3}$ (BTO) at room temperature and elucidate the critical role of domain evolution and aging in governing heat transport. Using a customized steady-state platform with in-situ electric fields up to $\pm$10 kV/cm, we observe a modulation of thermal conductivity up to 35% in fresh BTO driven by polarization reorientation and domain restructuring. First-principles finite-temperature lattice-dynamics calculations confirm that the switching behavior primarily originates from anisotropic phonon transport associated with domain configuration rather than strain-induced changes in phonon velocities. We further reveal that both ambient aging and controlled thermal aging can enhance the switching contrast through the formation and alignment of defect dipoles that modulate phonon-defect scattering. These results establish defect-domain interactions as a powerful design parameter for ferroelectric thermal switches and demonstrate a versatile experimental platform for exploring field-tunable heat transport and phase behavior in bulk functional materials.

cond-mat.mtrl-sci↗

arXiv2025

Thermal conductivity of boron arsenide above 2100 watts per meter per Kelvin at room temperature

Boron arsenide (BAs) single crystals had been previously reported to have thermal conductivity of 1500 W/mK at room temperature. Now we achieved thermal conductivity above 2100 W/mK at room temperature in BAs crystals due to much lower concentration of impurities Si, C, and O grown from purified arsenic. We also observed a T-1.8 dependence of the thermal conductivity, suggesting a more significant contribution from four-phonon scatterings than suggested by previous theory. We found that our experimental result can be fit with a modified theoretical calculation by tuning down the three-phonon scattering for phonons in the 4-8 THz range, although current phonon transport theory cannot provide a physical explanation. Such an advance will not only attract more effort on growing BAs single crystals and studying their practical applications but also stimulate theoretical work to predict more materials with possibly even higher thermal conductivities.

cond-mat.mtrl-sci↗

arXiv2025

High-throughput Discovery of Anti-gap Semiconductors

Conventional semiconductors typically have bonding states near the valence band maximum (VBM) and antibonding states near the conduction band minimum (CBM). Semiconductors with the opposite electronic configuration, namely an antibonding VBM and a bonding CBM, are here termed ``anti-gap semiconductors". They have been theoretically proposed to exhibit excellent optoelectronic properties because of their strong tolerance to defects. However, no anti-gap semiconductors have been identified so far, despite a known list of semiconductors with an antibonding VBM. Here, we use high-throughput computation to identify over 100 anti-gap semiconductors. From this group, we analyze the transition metal dichalcogenide MX$_2$ (M=Hf, Zr; X=S, Se) family in detail. In addition to verifying their defect tolerance for both electrons and holes using first-principles simulations, we also discovered that photoexcitation of charge carriers can lead to significant lattice stiffening and increased thermal conductivity in anti-gap semiconductors, which can be potentially used as photo-driven thermal switches. Our work analyzes the formation of the anti-gap electronic structure and showcases their unusual photoinduced lattice dynamics that can have a potential impact on their photophysical applications.

cond-mat.mtrl-sci↗

arXiv2024

Absence of Phonon Softening across a Charge Density Wave Transition due to Quantum Fluctuations

Kagome metals have emerged as a frontier in condensed matter physics due to their potential to host exotic quantum states. Among these, CsV3Sb5 has attracted significant attention for the unusual coexistence of charge density wave (CDW) order and superconductivity, presenting an ideal system for exploring novel electronic and phononic phenomena. The nature of CDW formation in CsV3Sb5 has sparked considerable debate. Previous studies have suggested that the underlying mechanism driving the CDW transition in CsV3Sb5 is distinct from conventional ones, such as electron-phonon coupling and Fermi surface nesting. In this study, we examine the origin of the CDW state via ab initio finite-temperature simulations of the lattice dynamics associated with CDW structures in CsV3Sb5. Through a comparative study of CsV3Sb5 and 2H-NbSe2, we demonstrate that the experimental absence of phonon softening in CsV3Sb5 and the presence of a weakly first order transition can be attributed to quantum zero-point motion of the lattice, which leads to smearing of the CDW landscape and effectively stabilizes the pristine structure even below the CDW transition temperature. We argue that this surprising behavior could cause coexistence of pristine and CDW structures across the transition and lead to a weak first-order transition. We further discuss experimental implications and use the simulation to interpret coherent phonon spectroscopy results in single crystalline CsV3Sb5. These findings not only refine our fundamental understanding of CDW transitions, but also highlight the surprising role of quantum effects in influencing macroscopic properties of relatively heavy-element materials like CsV3Sb5. Our results provide crucial insights into the formation mechanism of CDW materials that exhibit little to no phonon softening, including cuprates, aiding in the understanding of the CDW phase in quantum materials.

cond-mat.mtrl-sci↗

arXiv2024

Room-temperature Magnetic Thermal Switching by Suppressing Phonon-Magnon Scattering

Thermal switching materials, whose thermal conductivity can be controlled externally, show great potential in contemporary thermal management. Manipulating thermal transport properties through magnetic fields has been accomplished in materials that exhibit a high magnetoresistance. However, it is generally understood that the lattice thermal conductivity attributed to phonons is not significantly impacted by the magnetic fields. In this study, we experimentally demonstrate the significant impact of phonon-magnon scattering on the thermal conductivity of the rare-earth metal gadolinium near room temperature, which can be controlled by a magnetic field to realize thermal switching. Using first-principles lattice dynamics and spin-lattice dynamics simulations, we attribute the observed change in phononic thermal conductivity to field-suppressed phonon-magnon scattering. This research suggests that phonon-magnon scattering in ferromagnetic materials is crucial for determining their thermal conductivity, opening the door to innovative magnetic-field-controlled thermal switching materials.

cond-mat.mtrl-sci↗