arXiv subjects

Fangsen Li

Publications and source records attributed to Fangsen Li.

16 recordsLinked to original sources

arXiv2026

Digital Self-Interference Cancellation in Full-Duplex Radios: A Fundamental Limit Perspective

D-SIC is of crucial importance for the implementation of IBFD radios. Unfortunately, the achievable performance limit remains underexplored. To fill this gap, in this paper we aim to explore the performance limit, i.e., the minimum residual self-interference (RSI) of the most commonly used PH canceller, and provide the achievable pilot design accordingly. To this end, we first conduct a systematic analysis of the RSI power for the PH canceller, which takes into account both the truncation-induced error and the noise-induced error, whereas the former is usually ignored in the existing works. To simplify the performance analysis of RSI power, we employ the generalized Laguerre polynomial (GLP)-based PH canceller instead of the conventional monomial-based one, due to the appealing orthogonality property of the GLP for Gaussian inputs. With the GLP representation of the PH canceller, we further prove that the least-squares channel estimator is asymptotically unbiased, thus demonstrating the asymptotic optimality of Gaussian pilot sequences. Moreover, for the pilot sequence with a finite length, a succinct criterion for minimizing the RSI, namely, the condition-number-to-minimum eigenvalue ratio (CMER) criterion, which essentially balances the truncation-induced and noise-induced error, is presented. By contrast, the existing works normally consider the latter only. Interestingly, it is revealed that an appropriate PAPR of the pilot sequence is of critical importance to achieve the above balance. Simulation results demonstrate that the pilot sequence optimized according to our proposed CMER criterion can achieve an RSI as low as -87.3 dBm, which is over 14 dB lower than that of HE-LTF and over 6 dB lower than that of the state-of-the-art pilot sequence proposed in [1], provided that the order of the PH canceller is no higher than 9 because of the complexity constraint.

eess.SP↗

arXiv2024

Imaging half-unit-cell Cooper-pair density waves in monolayer 1T$^{\prime}$-MoTe$_2$

Unconventional superconductors that spontaneously break space-group symmetries of their underlying crystal lattice are distinguished by spatial modulations of the superconducting order parameter. These states have recently captured significant attention in various strongly correlated materials, where the breaking of translational or intra-unit-cell symmetries results in the emergence of pair density waves with wavelengths extending across one or multiple unit cells. Here, we employ a spectroscopic-imaging scanning tunneling microscope to identify robust half-unit-cell modulations of the superconducting gap magnitude, coherence strength and subgap states in tunable 1T$^{\prime}$-MoTe$_2$ monolayer. The modulations are oriented perpendicular to the zigzag Mo chains and coexist with three-unit-cell primary pair density wave modulations along the Mo chains, both of which attenuate with increasing temperature and the application of external magnetic fields. Importantly, we find that the superconductivity modulations are strongly linked to unconventional electron pairing mechanisms, which significantly deviate from the Cooper pairing observed in traditional Bardeen-Cooper-Schrieffer superconductors. Our results advance the knowledge of Cooper-pair density modulations and the intricate interplay with other symmetry-breaking states in strongly correlated superconductors.

cond-mat.supr-con↗

arXiv2023

Discovery of smectic charge and pair-density-wave orders in topological monolayer 1T$^\prime$-MoTe$_2$

Electronic liquid-crystal phases are observed in numerous strongly-correlated systems including high-temperature superconductors. However, identifying these exotic phases and understanding their interplay with superconductivity in topological materials remain challenging. Here we employ a cryogenic scanning tunneling microscopy to discover a smectic (stripe) charge order (CO) and a primary pair-density-wave (PDW) in topological monolayer 1T$^\prime$-MoTe$_2$. The two orders are spatially modulated unidirectionally at the same wavevector, but have a marked spatial phase difference of about 2$\pi$/5. Importantly, the primary PDW state features a two-gap superconductivity below the transition temperature of 6.0 K and induces another unique particle-hole-symmetric CO at twice the PDW wavevector. Combining these results and our density functional calculations, we reveal that the two smectic orders are primarily driven by nesting behaviors between electron and hole pockets. Our findings establish monolayer 1T$^\prime$-MoTe$_2$ as a topological paradigm for exploring electronic smecticity, which intertwines with multiple preexisting symmetry-breaking states.

cond-mat.supr-con↗

arXiv2023

Electronic Janus lattice and kagome-like bands in coloring-triangular MoTe2 monolayers

Polymorphic structures of transition-metal dichalcogenides (TMDs) host exotic electronic states, like charge density wave and superconductivity. However, the number of these structures is limited by crystal symmetries, which poses a challenge to achieve tailored lattices and properties both theoretically and experimentally. Here, we report a coloring-triangle (CT) latticed MoTe2 monolayer, termed CT-MoTe2, constructed by controllably introducing uniform and ordered mirror-twin-boundaries into a pristine monolayer in molecular beam epitaxy. Low-temperature scanning tunneling microscopy and spectroscopy (STM/STS) together with theoretical calculations reveal that the monolayer has an electronic Janus lattice, i.e., an energy-dependent atomic-lattice and a pseudo-Te sublattice, and shares the identical geometry with the Mo5Te8 layer. Dirac-like and flat electronic bands inherently existing in the CT lattice are identified by two broad and two prominent peaks in STS spectra, respectively, and verified with density-functional-theory calculations. Two types of intrinsic domain boundaries were observed, in one of which the electronic-Janus-lattice feature maintains, implying potential applications as an energy-tunable electron-tunneling barrier in future functional devices.

cond-mat.mtrl-sci↗

arXiv2022

Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe

Recently, intriguing physical properties have been unraveled in anisotropic layered semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry and thus a thickness-independent character emerges. Here, we apply high-resolution angle-resolved photoemission spectroscopy to directly image the in-plane anisotropic energy bands in monoclinic gallium telluride (GaTe). Our first-principles calculations reveal the in-plane anisotropic energy band structure of GaTe measured experimentally is dominated by a strong bulk-surface interaction rather than geometric factors, surface effect and quantum confinement effect. Furthermore, accompanied by the thickness of GaTe increasing from mono- to few-layers, the strong interlayer coupling of GaTe induces direct-indirect-direct band gap transitions and the in-plane anisotropy of hole effective mass is reversed. Our results shed light on the physical origins of in-plane anisotropy of electronic structure in GaTe, paving the way for the design and device applications of nanoelectronics and optoelectronics based on anisotropic layered semiconductors.

cond-mat.mtrl-sci↗

arXiv2022

Variation between Antiferromagnetism and Ferrimagnetism in NiPS3 by Electron Doping

How to electrically control magnetic properties of a magnetic material is promising towards spintronic applications, where the investigation of carrier doping effects on antiferromagnetic (AFM) materials remains challenging due to their zero net magnetization. In this work, we found electron doping dependent variation of magnetic orders of a two-dimensional (2D) AFM insulator NiPS3, where doping concentration is tuned by intercalating various organic cations into the van der Waals gaps of NiPS3 without introduction of defects and impurity phases. The doped NiPS3 shows an AFM-ferrimagnetic (FIM) transition at doping level of 0.2-0.5 electrons/cell and a FIM-AFM transition at doping level of >= 0.6 electrons/cell. We propose that the found phenomenon is due to competition between Stoner exchange dominated inter-chain ferromagnetic order and super-exchange dominated inter-chain AFM order at different doping level. Our studies provide a viable way to exploit correlation between electronic structures and magnetic properties of 2D magnetic materials for realization of magnetoelectric effect.

cond-mat.mtrl-sci↗

arXiv2021

Charge instability of topological Fermi arcs in chiral crystal CoSi

Topological boundary states, emerged at the spatial boundary between topological non-trivial and trivial phases, are usually gapless, or commonly referred as metallic states. For example, the surface state of a topological insulator is a gapless Dirac state. These metallic topological boundary states are typically well described by non-interacting fermions. However, the behavior of topological boundary states with significant electron-electron interactions, which could turn the gapless boundary states into gapped ordered states, e.g., density wave states or superconducting states, is of great interest theoretically, but is still lacking evidence experimentally. Here, we report the observation of incommensurable charge density wave (CDW) formed on the topological boundary states driven by the electron-electron interactions on the (001) surface of CoSi. The wavevector of CDW varies as the temperature changes, which coincides with the evolution of topological surface Fermi arcs with temperature. The orientation of CDW phase is determined by the chirality of the Fermi arcs, which indicates direct association between CDW and Fermi arcs. Our finding will stimulate the search of more interactions-driven ordered states, such as superconductivity and magnetism, on the boundaries of topological materials.

cond-mat.str-el↗

arXiv2021

Honeycomb lattice in metal-rich chalcogenide Fe2Te

Two-dimensional honeycomb crystals have inspired intense research interest for their novel properties and great potential in electronics and optoelectronics. Here, through molecular beam epitaxy on SrTiO3(001), we report successful epitaxial growth of metal-rich chalcogenide Fe2Te, a honeycomb-structured film that has no direct bulk analogue, under Te-limited growth conditions. The structural morphology and electronic properties of Fe2Te are explored with scanning tunneling microscopy and angle resolved photoemission spectroscopy, which reveal electronic bands cross the Fermi level and nearly flat bands. Moreover, we find a weak interfacial interaction between Fe2Te and the underlying substrates, paving a newly developed alternative avenue for honeycomb-based electronic devices.

cond-mat.mtrl-sci↗

arXiv2021

Oxygen adsorption induced superconductivity in ultrathin FeTe film on SrTiO3(001)

The phenomenon of oxygen incorporation induced superconductivity in iron telluride (Fe1+yTe, with antiferromagnetic (AFM) orders) is intriguing and quite different from the case of FeSe. Until now, the microscopic origin of the induced superconductivity and the role of oxygen are far from clear. Here, by combining in-situ scanning tunneling microscopy/spectroscopy (STM/STS) and x-ray photoemission spectroscopy (XPS) on oxygenated FeTe, we found physically adsorbed O2 molecules crystallized into c(2/3x2) structure as an oxygen overlayer at low temperature, which was vital for superconductivity. The O2 overlayer were not epitaxial on the FeTe lattice, which implied weak O2-FeTe interaction but strong molecular interactions. Energy shift observed in the STS and XPS measurements indicated hole doping effect from the O2 overlayer to the FeTe layer, leading to a superconducting gap of 4.5 meV opened across the Fermi level. Our direct microscopic probe clarified the role of oxygen on FeTe and emphasized the importance of charge transfer effect to induce superconductivity in iron-chalcogenide thin films.

cond-mat.supr-con↗

arXiv2020

Origin of the Electronic Structure in Single-Layer FeSe/SrTiO3 Films

The accurate theoretical description of the underlying electronic structures is essential for understanding the superconducting mechanism of iron-based superconductors. Compared to bulk FeSe, the superconducting single-layer FeSe/SrTiO3 films exhibit a distinct electronic structure consisting of only electron Fermi pockets, due to the formation of a new band gap at the Brillouin zone (BZ) corners and an indirect band gap between the BZ center and corners. Although intensive studies have been carried out, the origin of such a distinct electronic structure and its connection to bulk FeSe remain unclear. Here we report a systematic study on the temperature evolution of the electronic structure in single-layer FeSe/SrTiO3 films by angle-resolved photoemission spectroscopy. A temperature-induced electronic phase transition was clearly observed at 200 K, above which the electronic structure of single-layer FeSe/SrTiO3 films restored to that of bulk FeSe, characterized by the closing of the new band gap and the vanishing of the indirect band gap. Moreover, the interfacial charge transfer effect induced band shift of ~ 60 meV was determined for the first time. These observations not only show the first direct evidence that the electronic structure of single-layer FeSe/SrTiO3 films originates from bulk FeSe through a combined effect of an electronic phase transition and an interfacial charge transfer, but also provide a quantitative basis for theoretical models in describing the electronic structure and understanding the superconducting mechanism in single-layer FeSe/SrTiO3 films.

cond-mat.supr-con↗

arXiv2017

An extensive impurity-scattering study on the pairing symmetry of monolayer FeSe films on SrTiO3

Determination of the pairing symmetry in monolayer FeSe films on SrTiO3 is a requisite for understanding the high superconducting transition temperature in this system, which has attracted intense theoretical and experimental studies but remains controversial. Here, by introducing several types of point defects in FeSe monolayer films, we conduct a systematic investigation on the impurity-induced electronic states by spatially resolved scanning tunneling spectroscopy. Ranging from surface adsorption, chemical substitution to intrinsic structural modification, these defects generate a variety of scattering strength, which renders new insights on the pairing symmetry.

cond-mat.supr-con↗

arXiv2016

The Role of SrTiO3 Phonon Penetrating into thin FeSe Films in the Enhancement of Superconductivity

The significant role of interfacial coupling on the superconductivity enhancement in FeSe films on SrTiO3 has been widely recognized. But the explicit origination of this coupling is yet to be identified. Here by surface phonon measurements using high resolution electron energy loss spectroscopy, we found electric field generated by Fuchs-Kliewer (F-K) phonon modes of SrTiO3 can penetrate into FeSe films and strongly interact with electrons therein. The mode-specific electron-phonon coupling (EPC) constant for the ~92 meV F-K phonon is ~0.25 in the single-layer FeSe on SrTiO3. With increasing FeSe thickness, the penetrating field intensity decays exponentially, which matches well the observed exponential decay of the superconducting gap. It is unambiguously shown that the SrTiO3 F-K phonon penetrating into FeSe is essential in the interfacial superconductivity enhancement.

cond-mat.supr-con↗

arXiv2015

Atomically Resolved FeSe/SrTiO3(001) Interface Structure by Scanning Transmission Electron Microscopy

Interface-enhanced high-temperature superconductivity in one unit-cell (UC) FeSe films on SrTiO3(001) (STO) substrate has recently attracted much attention in condensed matter physics and material science. By combined in-situ scanning tunneling microscopy/spectroscopy (STM/STS) and ex-situ scanning transmission electron microscopy (STEM) studies, we report on atomically resolved structure including both lattice constants and actual atomic positions of the FeSe/STO interface under both non-superconducting and superconducting states. We observed TiO2 double layers (DLs) and significant atomic displacements in the top two layers of STO, lattice compression of the Se-Fe-Se triple layer, and relative shift between bottom Se and topmost Ti atoms. By imaging the interface structures under various superconducting states, we unveil a close correlation between interface structure and superconductivity. Our atomic-scale identification of FeSe/STO interface structure provides useful information on investigating the pairing mechanism of this interface-enhanced high-temperature superconducting system.

cond-mat.supr-con↗

arXiv2015

Interface enhanced electron-phonon coupling and high temperature superconductivity in potassium-coated ultra-thin FeSe films on SrTiO3

Alkali-metal (potassium) adsorption on FeSe thin films with thickness from two unit cells (UC) to 4-UC on SrTiO3 grown by molecular beam epitaxy is investigated with a low-temperature scanning tunneling microscope. At appropriate potassium coverage (0.2-0.3 monolayer), the tunneling spectra of the films all exhibit a superconducting-like gap larger than 11 meV (five times the gap value of bulk FeSe), and two distinct features of characteristic phonon modes at 11 meV and 21 meV. The results reveal the critical role of the interface enhanced electron-phonon coupling for possible high temperature superconductivity in the system and is consistent with recent theories. Our study provides compelling evidence for the conventional pairing mechanism for this type of heterostructure superconducting systems.

cond-mat.supr-con↗

arXiv2014

High temperature superconducting FeSe films on SrTiO3 substrates

Interface enhanced superconductivity at two dimensional limit has become one of most intriguing research directions in condensed matter physics. Here, we report the superconducting properties of ultra-thin FeSe films with the thickness of one unit cell (1-UC) grown on conductive and insulating SrTiO3 (STO) substrates. For the 1-UC FeSe on conductive STO substrate (Nb-STO), the magnetization versus temperature (M-T) measurement shows a diamagnetic signal at 85 K, suggesting the possibility of superconductivity appears at this high temperature. For the FeSe films on insulating STO substrate, systematic transport measurements were carried out and the sheet resistance of FeSe films exhibits Arrhenius TAFF behavior with a crossover from a single-vortex pinning region to a collective creep region. More intriguing, sign reversal of Hall resistance with temperature is observed, demonstrating a crossover from hole conduction to electron conduction above Tc in 1-UC FeSe films.

cond-mat.supr-con↗

arXiv2013

Direct observation of high temperature superconductivity in one-unit-cell FeSe films

Heterostructure based interface engineering has been proved an effective method for finding new superconducting systems and raising superconductivity transition temperature (TC). In previous work on one unit-cell (UC) thick FeSe films on SrTiO3 (STO) substrate, a superconducting-like energy gap as large as 20 meV, was revealed by in situ scanning tunneling microscopy/spectroscopy (STM/STS). Angle resolved photoemission spectroscopy (ARPES) further revealed a nearly isotropic gap of above 15 meV, which closes at a temperature of ~ 65 K. If this transition is indeed the superconducting transition, then the 1-UC FeSe represents the thinnest high TC superconductor discovered so far. However, up to date direct transport measurement of the 1-UC FeSe films has not been reported, mainly because growth of large scale 1-UC FeSe films is challenging and the 1-UC FeSe films are too thin to survive in atmosphere. In this work, we successfully prepared 1-UC FeSe films on insulating STO substrates with non-superconducting FeTe protection layers. By direct transport and magnetic measurements, we provide definitive evidence for high temperature superconductivity in the 1-UC FeSe films with an onset TC above 40 K and a extremely large critical current density JC ~ 1.7*106 A/cm2 at 2 K. Our work may pave the way to enhancing and tailoring superconductivity by interface engineering.

cond-mat.supr-con↗