arXiv subjects

Fangting Chen

Publications and source records attributed to Fangting Chen.

12 recordsLinked to original sources

arXiv2025

Magnetic properties of molecular beam epitaxy-grown ultrathin Cr2Ge2Te6 films down to monolayer limit on Si substrates

Cr2Ge2Te6, a prototypical van der Waals ferromagnetic semiconductor, have attracted significant interest for its potential applications in high-performance spintronics. However, the magnetic ground state of monolayer Cr2Ge2Te6 remains elusive due to fragile and irregular-shaped thin flake samples with weak magnetic signals. Here, we successfully grow uniform ferromagnetic Cr2Ge2Te6 films down to monolayer by molecular beam epitaxy. By exploiting a self-limiting growth mode, we achieve synthesis of uniform monolayer Cr2Ge2Te6 films across entire millimeter-scale Si substrates. Through a combination of superconducting quantum interference device magnetometry and anomalous Hall effect measurements, we establish that monolayer Cr2Ge2Te6 exhibits intrinsic ferromagnetism with perpendicular magnetic anisotropy below ~10 K, albeit with strong magnetic fluctuations characteristic of its two-dimensional nature. Furthermore, a systematic thickness-dependent study reveals a crossover from this fluctuation-dominated two-dimensional magnetism turns into conventional long-range ferromagnetic order as the film thickness increases. Our work not only definitively establishes the intrinsic ferromagnetic ground state of monolayer Cr2Ge2Te6, but also provides a scalable, silicon-compatible route for preparing the two-dimensional magnet for future spintronic or quantum devices.

cond-mat.mtrl-sci↗

arXiv2024

Quantized Andreev conductance in semiconductor nanowires

Clean one-dimensional electron systems can exhibit quantized conductance. The plateau conductance doubles if the transport is dominated by Andreev reflection. Here, we report quantized conductance observed in both Andreev and normal-state transports in PbTe-Pb and PbTe-In hybrid nanowires. The Andreev plateau is observed at $4e^2/h$, twice of the normal plateau value of $2e^2/h$. In comparison, Andreev conductance in the best-optimized III-V nanowires is non-quantized due to mode-mixing induced dips (a disorder effect), despite the quantization of normal-state transport. The negligible mode mixing in PbTe hybrids indicates an unprecedented low-disorder transport regime for nanowire devices, beneficial for Majorana researches.

cond-mat.mes-hall↗

arXiv2024

SQUID oscillations in PbTe nanowire networks

Network structures by semiconductor nanowires hold great promise for advanced quantum devices, especially for applications in topological quantum computing. In this study, we created networks of PbTe nanowires arranged in loop configurations. Using shadow-wall epitaxy, we defined superconducting quantum interference devices (SQUIDs) using the superconductor Pb. These SQUIDs exhibit oscillations in supercurrent upon the scanning of a magnetic field. Most of the oscillations can be fitted assuming a sinusoidal current-phase relation for each Josephson junction. Under certain conditions, the oscillations are found to be skewed, suggesting possible deviation from a sinusoidal behavior. Our results highlight the potential of PbTe nanowires for building complex quantum devices in the form of networks.

cond-mat.mes-hall↗

arXiv2024

Gate-tunable subband degeneracy in semiconductor nanowires

Degeneracy and symmetry have a profound relation in quantum systems. Here, we report gate-tunable subband degeneracy in PbTe nanowires with a nearly symmetric cross-sectional shape. The degeneracy is revealed in electron transport by the absence of a quantized plateau. Utilizing a dual gate design, we can apply an electric field to lift the degeneracy, reflected as emergence of the plateau. This degeneracy and its tunable lifting were challenging to observe in previous nanowire experiments, possibly due to disorder. Numerical simulations can qualitatively capture our observation, shedding light on device parameters for future applications.

cond-mat.mes-hall↗

arXiv2024

Selective-Area-Grown PbTe-Pb Planar Josephson Junctions for Quantum Devices

Planar Josephson junctions are predicted to host Majorana zero modes. The material platforms in previous studies are two dimensional electron gases (InAs, InSb, InAsSb and HgTe) coupled to a superconductor such as Al or Nb. Here, we introduce a new material platform for planar JJs, the PbTe-Pb hybrid. The semiconductor, PbTe, was grown as a thin film via selective area epitaxy. The Josephson junction was defined by a shadow wall during the deposition of the superconductor Pb. Scanning transmission electron microscopy reveals a sharp semiconductor-superconductor interface. Gate-tunable supercurrent and multiple Andreev reflections are observed. A perpendicular magnetic field causes interference patterns of the switching current, exhibiting Fraunhofer-like and SQUID-like behaviors. We further demonstrate a prototype device for Majorana detection, wherein phase bias and tunneling spectroscopy are applicable.

cond-mat.supr-con↗

arXiv2024

Enhanced superconductivity in PbTe-In hybrids

We report the realization of epitaxial indium thin films on PbTe nanowires. The film is continuous and forms an atomically sharp interface with PbTe. Tunneling devices reveal a hard superconducting gap. The gap size, 1.08 to 1.18 meV, is twice as large as bulk indium's ($\sim$ 0.5 meV), due to the presence of PbTe. A similar enhancement is also observed in the critical temperature of In on a PbTe substrate. Subgap peaks appear at finite magnetic fields. The effective $g$-factor (15-45) is notably enhanced compared to bare PbTe wires ($<$ 10) due to the presence of In, differing from Al-hybrids. Josephson devices exhibit gate-tunable supercurrents. The PbTe-In hybrid enhances the properties of both, the superconductivity of In and g-factors of PbTe, and thus may enable exotic phases of matter such as topological superconductivity.

cond-mat.mes-hall↗

arXiv2024

Reducing disorder in PbTe nanowires for Majorana research

Material challenges are the key issue in Majorana research where surface disorder constrains device performance. Here, we tackle this challenge by embedding PbTe nanowires within a lattice-constant-matched crystal. The wire edges are shaped by self-organized growth instead of lithography, resulting in nearly-atomic-flat facets along both cross-sectional and longitudinal directions. Quantized conductance is observed at zero magnetic field with channel lengths maximally reaching 1.7 $\mu$m, significantly surpassing the state-of-the-art of III-V nanowires (an order-of-magnitude improvement compared to InSb). Coupling PbTe to a Pb film unveils a flat interface spanning microns and a large superconducting gap of 1 meV. Our result not only represents a stride toward meeting the stringent low-disorder requirement for Majoranas, but may also open the door to various hybrid quantum devices requiring a low level of disorder.

cond-mat.mes-hall↗

arXiv2023

Ballistic PbTe Nanowire Devices

Disorder is the primary obstacle in current Majorana nanowire experiments. Reducing disorder or achieving ballistic transport is thus of paramount importance. In clean and ballistic nanowire devices, quantized conductance is expected with plateau quality serving as a benchmark for disorder assessment. Here, we introduce ballistic PbTe nanowire devices grown using the selective-area-growth (SAG) technique. Quantized conductance plateaus in units of $2e^2/h$ are observed at zero magnetic field. This observation represents an advancement in diminishing disorder within SAG nanowires, as none of the previously studied SAG nanowires (InSb or InAs) exhibit zero-field ballistic transport. Notably, the plateau values indicate that the ubiquitous valley degeneracy in PbTe is lifted in nanowire devices. This degeneracy lifting addresses an additional concern in the pursuit of Majorana realization. Moreover, these ballistic PbTe nanowires may enable the search for clean signatures of the spin-orbit helical gap in future devices.

cond-mat.mes-hall↗

arXiv2023

Hard superconducting gap in PbTe nanowires

Semiconductor nanowires coupled to a superconductor provide a powerful testbed for quantum device physics such as Majorana zero modes and gate-tunable hybrid qubits. The performance of these quantum devices heavily relies on the quality of the induced superconducting gap. A hard gap, evident as vanishing subgap conductance in tunneling spectroscopy, is both necessary and desired. Previously, a hard gap has been achieved and extensively studied in III-V semiconductor nanowires (InAs and InSb). In this study, we present the observation of a hard superconducting gap in PbTe nanowires coupled to a superconductor Pb. The gap size ($Δ$) is $\sim$ 1 meV (maximally 1.3 meV in one device). Additionally, subgap Andreev bound states can also be created and controlled through gate tuning. Tuning a device into the open regime can reveal Andreev enhancement of the subgap conductance, suggesting a remarkable transparent superconductor-semiconductor interface, with a transparency of $\sim$ 0.96. These results pave the way for diverse superconducting quantum devices based on PbTe nanowires.

cond-mat.mes-hall↗

arXiv2023

Conductance Quantization in PbTe Nanowires

PbTe nanowires coupled to a superconductor have recently been proposed as a potential Majorana platform. The hallmark of the one-dimensional nature of ballistic nanowires is their quantized conductance. Here, we report the observation of conductance plateaus at multiples of the quantized value $2e^2/h$ in PbTe nanowires at finite magnetic fields. The quantized plateaus, as a function of source-drain bias and magnetic field, allow for the extraction of the Landé $g$-factor, sub-band spacing and effective mass. The coefficient of 2 in the plateau conductance indicates the presence of valley degeneracy arising from the crystal orientation of the nanowires, which are grown on a (001) substrate. Occasionally, this degeneracy can be lifted by a gate voltage that breaks the mirror symmetry. Our results demonstrate the one-dimensionality of PbTe nanowires and fulfill one of the necessary conditions for the realization of Majorana zero modes.

cond-mat.mes-hall↗

arXiv2022

Proximity effect in PbTe-Pb hybrid nanowire Josephson junctions

Semiconductor-superconductor hybrid nanowires are a leading material platform for the realization of Majorana zero modes. The semiconductors in previous studies are dominantly InAs or InSb. In this work, we show the induced superconductivity in a PbTe nanowire epitaxially coupled to a superconductor Pb. The Josephson junction device based on this hybrid reveals a gate-tunable supercurrent in the open regime and a hard superconducting gap in the tunneling regime. By demonstrating the superconducting proximity effect, our result can enable Majorana searches and other applications like gate-tunable qubits in a new semiconductor system.

cond-mat.mes-hall↗

arXiv2021

Observation of Aharonov-Bohm effect in PbTe nanowire networks

We report phase coherent electron transport in PbTe nanowire networks with a loop geometry. Magneto-conductance shows Aharonov-Bohm (AB) oscillations with periods of $h/e$ and $h/2e$ in flux. The amplitude of $h/2e$ oscillations is enhanced near zero magnetic field, possibly due to interference between time-reversal paths. Temperature dependence of the AB amplitudes suggests a phase coherence length $\sim$ 8 - 12 $μ$m at 50 mK. This length scale is larger than the typical geometry of PbTe-based hybrid semiconductor-superconductor nanowire devices.

cond-mat.mes-hall↗