arXiv subjects

Farhad Fazileh

Publications and source records attributed to Farhad Fazileh.

10 recordsLinked to original sources

arXiv2026

Optical activation of nonlinear Hall effect in topological insulators with warped Fermi surface

Topological insulators (TIs) with hexagonally warped Fermi surface are natural platforms for the nonlinear Hall effect, as warping breaks inversion symmetry while preserving time-reversal symmetry (TRS). Here we show that this inversion breaking alone is insufficient: although warping generates a strongly anisotropic Berry curvature, the preserved threefold rotational symmetry forces the equilibrium Berry curvature dipole (BCD) to vanish identically. We demonstrate that linearly polarized light removes this symmetry obstruction: in the off-resonant Floquet regime, it lowers the rotational symmetry while preserving TRS, thereby generating a finite BCD whose magnitude, orientation, and sign are continuously tunable by the light intensity and polarization. For realistic Bi$_2$Te$_3$ parameters, we show that the induced BCD reaches $\sim$0.03~nm, yielding microampere-scale nonlinear Hall currents under experimentally accessible conditions. Our results therefore establish Floquet symmetry engineering as a route to activating the symmetry-forbidden nonlinear transport on TI surfaces without breaking the TRS.

cond-mat.mes-hall↗

arXiv2025

Linearly polarized light enables chiral edge transport in quasi-2D Dirac materials

Floquet engineering with high-frequency light offers dynamic control over topological phases in quantum materials. While in 3D Dirac systems circularly polarized light is known to induce topological phase transitions via gap opening, linearly polarized light (LPL) has generally been considered ineffective. Here we show that in quasi-2D Dirac materials the second-order momentum term arising from the intersurface coupling can induce a topological phase transition under LPL, leading to chiral edge channels. Considering an ultrathin Bi$_2$Se$_3$ film as a representative system, we show that this transition occurs at experimentally accessible light intensities. Our results thus promote quasi-2D materials as viable platforms for light-controlled topological phases, expanding the potential of Floquet topological engineering.

cond-mat.mes-hall↗

arXiv2024

Ground state of the staggered Heisenberg-$Γ$ honeycomb model in a magnetic field

We study the ground state properties of the $S=\frac{1}{2}$ staggered Heisenberg-$Γ$ honeycomb model under a magnetic field based on analytical and numerical methods. Our calculations show that the conventional zigzag and stripy phases are favored because of the staggered Heisenberg interaction away from the pure $Γ$ limit. In our classical analysis, we find that the field induces a series of competing magnetic phases with relatively large unit cells in the region sandwiched between the two magnetic phases with long-range ordering. In the quantum treatment, these large magnetic unit cells are destabilized by strong quantum fluctuations that result in the stabilization of a gapless quantum spin liquid behavior. In a honeycomb $Γ$ magnet, we disclose an intermediate-field gapless quantum spin liquid phase driven by a tilted field away from the out-of-plane direction only for a narrow region between the low-field zigzag and high-field fully polarized phases.

cond-mat.str-el↗

arXiv2022

Enhanced thermoelectric properties in phosphorene nanorings

Using the tight-binding approach, we investigate the thermoelectric (TE) properties of rectangular phosphorene nanorings for both symmetrically and asymmetrically attaching to phosphorene nanoribbon leads. We design our phosphorene-based nanostructures to enhance the TE performance in the absence and the presence of perpendicular magnetic fields. Our results show that when zigzag phosphorene nanoribbons (ZPNRs) are coupled symmetrically to rectangular rings, a comparatively large band gap is induced in the electronic conductance due to the suppression of the contribution of edge states. This gives rise to a remarkable increase in the thermopower response compared to the case of pristine ZPNRs. More intriguingly, we found that though the maximum power factor in this system is about the same as the one for its ZPNR counterpart, the much smaller electronic thermal conductance of this phosphorene-based nanostructure can remarkably contribute to the improvement of the figure of merit. Also, we found that the symmetry/asymmetry of our designed nanostructures, the geometrical characteristics of the ring, and the magnetic flux are three important factors that control the thermoelectric properties of phosphorene quantum rings. Our numerical calculations show that by changing the magnetic flux through the nanoring, a drastic increase in the thermopower is observed near an antiresonance point. We demonstrate the tunability of the thermopower and the possibility to switch on and off the TE response of phosphorene nanorings with the magnetic flux. Moreover, for asymmetric connection configurations with armchair-edged leads, we found that though the thermopower is almost intact, a remarkable reduction of the electronic thermal conductance can lead to a notable improvement in the figure of merit. Our results suggest phosphorene nanorings as promising candidate nanostructures for TE applications.

cond-mat.mes-hall↗

arXiv2022

The overlooked role of band-gap parameter in characterization of Landau levels in a gapped phase semi-Dirac system: the monolayer phosphorene case

Two-dimensional gapped semi-Dirac (GSD) materials are systems with a finite band gap that their charge carriers behave relativistically in one direction and Schrödinger-like in the other. In the present work, we show that besides the two well-known energy bands features (curvature and chirality), the band-gap parameter also play a crucial role in the index- and magnetic field-dependence of the Landau levels (LLs) in a GSD system. We take the monolayer phosphorene as a GSD representative example to explicitly provide physical insights into the role of this parameter in determining the index- and magnetic field-dependence of LLs. We derive an effective one-dimensional Schrödinger equation for charge carriers in the presence of a perpendicular magnetic field and argue that the form of its effective potential is clearly sensitive to a dimensionless band-gap that is tunable by structural parameters. The theoretical magnitude of this effective gap and its interplay with oval shape $k$-space cyclotron orbits resolve the seeming contradiction in determining the type of the quantum Hall effect in the pristine monolayer phosphorene. Our results strongly confirm that the dependence of LLs on the magnetic field in this GSD material is as conventional two-dimensional semiconductor electron gases up to a very high field regime. Using the strain-induced gap modification scheme, we show the field dependence of the LLs continuously evolves into $B^{2/3}$ behavior, which holds for a gapless semi-Dirac system. The highlighted role of the band-gap parameter may affect the consequences of the band anisotropy in the physical properties of a GSD material, including magnetotransport, optical conductivity, dielectric function, and thermoelectric performance.

cond-mat.mes-hall↗

arXiv2018

Topological phase transition in GeSnH$_2$ induced by biaxial tensile strain: A tight-binding study

An effective tight-binding (TB) Hamiltonian for monolayer GeSnH$_2$ is proposed which has an inversion-asymmetric honeycomb structure. The low-energy band structure of our TB model agrees very well with previous {\it ab initio} calculations under biaxial tensile strain. We predict a phase transition upon 7.5\% biaxial tensile strain in agreement with DFT calculations. Upon 8.5\% strain the system exhibits a band gap of 134 meV, suitable for room temperature applications. The topological nature of the phase transition is confirmed by: 1)the calculation of the $\mathbb{Z}_2$ topological invariant, and 2)quantum transport calculations of disordered GeSnH$_2$ nanoribbons which allows us to determine the universality class of the conductance fluctuations.

cond-mat.mes-hall↗

arXiv2017

A tight-binding investigation of biaxial strain induced topological phase transition in GeCH$_3$

We propose a tight-binding (TB) model, that includes spin-orbit coupling (SOC), to describe the electronic properties of methyl-substituted germanane (GeCH$_3$). This model gives an electronic spectrum in agreement with first principle results close to the Fermi level. Using the $\mathbb{Z}_2$ formalism, we show that a topological phase transition from a normal insulator (NI) to a quantum spin Hall (QSH) phase occurs at 11.6\% biaxial tensile strain. The sensitivity of the electronic properties of this system on strain, in particular its transition to the topological insulating phase, makes it very attractive for applications in strain sensors and other microelectronic applications.

cond-mat.mtrl-sci↗

arXiv2016

Evolution of cooperation on scale-free networks under limited resources

Limitation of resources has been recently introduced as a mechanism for the survival and coexistence of cooperators with defectors in well-mixed populations. Here we examine the same model on a scale-free network. A prisoner's dilemma game on a scale-free network has shown coexistence of cooperators and defectors for the entire range of parameters. Our results show that by introducing the network to the limited resources model, the cooperator-dominated region in the parameter space expands comparing to the results of well-mixed population and the coexistence region becomes narrower. The effect of scale-free network is therefore interpreted as improving the cooperation in the population and reducing the coexistence.

q-bio.PE↗

arXiv2015

Scaling laws for band gaps of phosphorene nanoribbons: A tight-binding calculation

In this study, we analyze the band structure, the state characterization, and electronic transport of monolayer black phosphorus (phosphorene) zigzag nanoribbons (zPNRs) and armchair nanoribbons (aPNRs), using five-parameter tight-binding (TB) approximation. In zPNRs, the ratio of the two dominant hopping parameters indicates the possibility of a relativistic dispersion relation and the existence of a pair of separate quasi-flat bands at the Fermi level. Moreover, the corresponding states are edge localized if their bands are well separated from the valence and conduction bands. We also investigated the scaling laws of the band gaps versus ribbon widths for the armchair and zigzag phosphorene nanoribbons. In aPNRs, the transverse electric field along the ribbon width enhances the band gap closure by shifting the energy of the valence and conduction band edge states. For zPNRs, a gap occurs at the middle of the relatively degenerate quasi-flat bands; thus, these ribbons are a promising candidate for future field-effect transistors.

cond-mat.mes-hall↗

arXiv2013

Zero Temperature Phase Diagram of the Classical Kane-Mele-Heisenberg Model

The classical phase diagram of the Kane-Mele-Heisenberg model is obtained by three complementary methods: Luttinger-Tisza, variational minimization, and the iterative minimization method. Six distinct phases were obtained in the space of the couplings. Three phases are commensurate with long-range ordering, planar N{é}el states in horizontal plane (phase.I), planar states in the plane vertical to the horizontal plane (phase.VI) and collinear states normal to the horizontal plane (phase.II). However the other three, are infinitely degenerate due to the frustrating competition between the couplings, and characterized by a manifold of incommensurate wave-vectors. These phases are, planar helical states in horizontal plane (phase.III), planar helical states in a vertical plane (phase.IV) and non-coplanar states (phase.V). Employing the linear spin-wave analysis, it is found that the quantum fluctuations select a set of symmetrically equivalent states in phase.III, through the quantum order-by-disorder mechanism. Based on some heuristic arguments is argued that the same scenario may also occur in the other two frustrated phases VI and V.

cond-mat.str-el↗