arXiv subjects

Farshid Reza

Publications and source records attributed to Farshid Reza.

3 recordsLinked to original sources

arXiv2026

Electric-field effects on defect migration energetics in GaN

A predictive understanding of defect transport in GaN under operating electric fields is critical for assessing device reliability in high-power and radiation environments. In this work, a ReaxFF reactive force field for GaN is developed using a density-functional-theory training set that includes structural, thermodynamic, and defect properties. The force field yields various properties such as lattice parameters, cohesive energies, and defect formation and migration energies in close agreement with prior first-principles and experimental results. Under externally applied electric fields, we find that migration barriers can be strongly modulated, with changes that depend on defect type and field orientation. Notably, the electric fields do not simply linearly bias defect motion in GaN, but can anisotropically modify migration barriers through charge-lattice coupling, leading to nonlinear transport behavior. The response arises from field-induced partial charge redistribution and local lattice distortion. These results demonstrate that electric fields can complexly modify the defect migration landscape, providing new insight into defect transport in GaN under high-field conditions.

cond-mat.mtrl-sci↗

arXiv2025

Evaluation of Structural Properties and Defect Energetics in Al$_x$Ga$_{1-x}$N Alloys

Al$_x$Ga$_{1-x}$N alloys are essential for high-performance optoelectronic and power devices, yet the role of composition on defect energetics remains underexplored, largely due to the limitations of first-principles methods in modeling disordered alloys. To address this, we employ a machine learning interatomic potential (MLIP) to investigate the structural and defect-related physical properties in Al$_x$Ga$_{1-x}$N. The MLIP is first validated by reproducing the equation of state, lattice constants, and elastic constants of the binary endpoints, GaN and AlN, as well as known defect formation and migration energies from density functional theory and empirical potentials. We then apply the MLIP to evaluate elastic constants of AlGaN alloys, which reveals a non-linear relation with alloying effect. Our results reveal that nitrogen Frenkel pair formation energies and the migration barriers for nitrogen point defects are highly sensitive to the local chemical environment and migration path. In contrast, Ga and Al vacancy migration energies remain relatively insensitive to alloy composition, whereas their interstitial migration energies exhibit stronger compositional dependence. These results provide quantitative insight into how alloying influences defect energetics in AlGaN, informing defect engineering strategies for improved material performance.

cond-mat.mtrl-sci↗

arXiv2024

Examining composition-dependent radiation response in AlGaN

Al$_x$Ga$_{1-x}$N materials have become increasingly important for electronics in radiation environments due to their robust properties. In this work, we aim to investigate the atomistic mechanisms of radiation-induced damage in AlGaN compounds, providing insights that bridge the gap between high-length-scale experimental data and detailed atomic-level processes. Through extensive molecular dynamics simulations, we reveal the compositional dependence of radiation-induced defect production in Al$_x$Ga$_{1-x}$N systems with $x$ ranging from 0 to 1. The damage accumulation characteristics observed in our simulations align notably well with available experimental data at temperatures up to room temperature. Our findings indicate that alloy composition significantly influences defect production and microstructural evolution, including the formation of dislocation loops and defect clusters. Specifically, with increasing Al content, defect production from individual recoil events is reduced; however, extended interstitial defects are more likely to form considering cumulative effects, leading to enhanced damage at high doses. Among the compositions studied, we find that 25\% Al content leads to the least overall radiation damage, suggesting an optimal alloying strategy for mitigating radiation effects. These findings underscore the interplay between defect formation, dynamic annealing, and cascade effects, offering insights for optimizing AlGaN materials for radiation resistance in practical applications.

cond-mat.mtrl-sci↗