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Farzad Mahfouzi

Publications and source records attributed to Farzad Mahfouzi.

28 records · Page 2Linked to original sources

Antidamping spin-orbit torque driven by spin-flip reflection mechanism on the surface of a topological insulator: A time-dependent nonequilibrium Green function approach

Motivated by recent experiments observing spin-orbit torque (SOT) acting on the magnetization $\vec{m}$ of a ferromagnetic (F) overlayer on the surface of a three-dimensional topological insulator (TI), we investigate the origin of the SOT and the magnetization dynamics in such systems. We predict that lateral F/TI bilayers of finite length, sandwiched between two normal metal leads, will generate a large antidamping-like SOT per very low charge current injected parallel to the interface. The large values of antidamping-like SOT are {\it spatially localized} around the transverse edges of the F overlayer. Our analysis is based on adiabatic expansion (to first order in $\partial \vec{m}/\partial t$) of time-dependent nonequilibrium Green functions (NEGFs), describing electrons pushed out of equilibrium both by the applied bias voltage and by the slow variation of a classical degree of freedom [such as $\vec{m}(t)$]. From it we extract formulas for spin torque and charge pumping, which show that they are reciprocal effects to each other, as well as Gilbert damping in the presence of SO coupling. The NEGF-based formula for SOT naturally splits into four components, determined by their behavior (even or odd) under the time and bias voltage reversal. Their complex angular dependence is delineated and employed within Landau-Lifshitz-Gilbert simulations of magnetization dynamics in order to demonstrate capability of the predicted SOT to efficiently switch $\vec{m}$ of a perpendicularly magnetized F overlayer.

cond-mat.mes-hall↗

Spin-to-charge conversion in lateral and vertical topological-insulator/ferromagnet heterostructures with microwave-driven precessing magnetization

Using the charge-conserving Floquet-Green function approach to open quantum systems driven by external time periodic potential, we analyze how spin current pumped (in the absence of any dc bias voltage) by the precessing magnetization of a ferromagnetic (F) layer is injected {\em laterally} into the interface with strong spin-orbit coupling (SOC) and converted into charge current flowing in the same direction. In the case of metallic interface with the Rashba SOC used in experiments [Nature Comm. {\bf 4}, 2944 (2013)], both spin $I^{S_α}$ and charge $I$ current flow within it where $I/I^{S_α} \simeq$ 2--8\% (depending on the precession cone angle), while for F/topological-insulator (F/TI) interface employed in related experiments (arXiv:1312.7091) the conversion efficiency is greatly enhanced $I/I^{S_α} \simeq$ 40--60\% due to perfect spin-momentum locking on the surface of TI. The spin-to-charge conversion occurs also when spin current is pumped {\em vertically} through the F/TI interface with smaller efficiency $I/I^{S_α} \sim 0.001\%$, but with charge current signal being sensitive to whether the Dirac fermions at the interface are massive or massless.

cond-mat.mes-hall↗

Spin-Seebeck effect on the surface of topological insulator due to nonequilibrium spin-polarization parallel to the direction of thermally driven electronic transport

We study the transverse spin-Seebeck effect (SSE) on the surface of a three-dimensional topological insulator (TI) thin film, such as Bi$_2$Se$_3$, which is sandwiched between two normal metal leads. The temperature bias $ΔT$ applied between the leads generates surface charge current which becomes spin-polarized due to strong spin-orbit coupling on the TI surface, with polarization vector acquiring a component $P_x \simeq 60%$ {\em parallel to the direction of transport}. When the third nonmagnetic voltage probe is attached to the portion of the TI surface across its width $L_y$, pure spin current will be injected into the probe where the inverse spin Hall effect (ISHE) converts it into a voltage signal \mbox{$|V_\mathrm{ISHE}|^\mathrm{max}/ΔT \simeq 2.5$ $μ$V/K} (assuming the SH angle of Pt voltage probe and $L_y=1$ mm). The existence of predicted nonequilibrium spin-polarization parallel to the direction of electronic transport and the corresponding electron-driven SSE crucially relies on orienting quintuple layers (QLs) of Bi$_2$Se$_3$ {\em orthogonal} to the TI surface and {\em tilted} by $45^\circ$ with respect to the direction of transport. Our analysis is based on the Landauer-Büttiker-type formula for spin currents in the leads of a multi-terminal quantum-coherent junction, which is constructed using nonequilibrium Green function formalism within which we show how to take into account arbitrary orientation of QLs via the self-energy describing coupling between semi-infinite normal metal leads and TI.

cond-mat.mes-hall↗

Signatures of electron-magnon interaction in charge and spin currents in magnetic tunnel junctions: A nonequilibrium many-body perturbation theory approach

We develop a numerically exact scheme for resumming certain classes of Feynman diagrams in the self-consistent perturbation expansion for the electron and magnon self-energies in the nonequilibrium Green function formalism applied to a coupled electron-magnon (\mbox{e-m}) system which is driven out of equilibrium by the applied finite bias voltage. Our scheme operates with the electronic and magnonic GFs and the corresponding self-energies viewed as matrices in the Keldysh space, rather than conventionally extracting their retarded and lesser components. This is employed to understand the effect of inelastic \mbox{e-m} scattering on charge and spin current vs. bias voltage $V_b$ in F/I/F magnetic tunnel junctions (MTJs), which are modeled on a one-dimensional (1D) tight-binding lattice for the electronic subsystem and 1D Heisenberg model for the magnonic subsystem. For this purpose, we evaluate Fock diagram for the electronic self-energy and the electron-hole polarization bubble diagram for the magnonic self-energy. The respective electronic and magnonic GF lines within these diagrams are the fully interacting ones, thereby requiring to solve the ensuing coupled system of nonlinear integral equations self-consistently. Despite using the 1D model and treating \mbox{e-m} interaction in many-body fashion only within a small active region consisting of few lattice sites around the F/I interface, our analysis captures essential features of the so-called zero-bias anomaly observed in both MgO- and AlO$_x$-based realistic 3D MTJs where the second derivative $d^2 I/dV_b^2$ (i.e., inelastic electron tunneling spectrum) of charge current exhibits sharp peaks of opposite sign on either side of the zero bias voltage.

cond-mat.mes-hall↗

How to construct the proper gauge-invariant density matrix in steady-state nonequilibrium: Applications to spin-transfer and spin-orbit torques

Experiments observing spin density and spin currents (responsible for, e.g., spin-transfer torque) in spintronic devices measure only the nonequilibrium contributions to these quantities, typically driven by injecting unpolarized charge current or by applying external time-dependent fields. On the other hand, theoretical approaches to calculate them operate with both the nonequilibrium (carried by electrons around the Fermi surface) and the equilibrium (carried by the Fermi sea electrons) contributions. Thus, an unambiguous procedure should remove the equilibrium contributions, thereby rendering the nonequilibrium ones which are measurable and satisfy the gauge-invariant condition according to which expectation values of physical quantities should not change when electric potential everywhere is shifted by a constant amount. Using the framework of nonequilibrium Green functions, we delineate such procedure which yields the proper gauge-invariant nonequilibrium density matrix in the linear-response and elastic transport regime for current-carrying steady state of an open quantum system connected to two macroscopic reservoirs. Its usage is illustrated by computing: (i) conventional spin-transfer torque (STT) in asymmetric F/I/F magnetic tunnel junctions (MTJs); (ii) unconventional STT in asymmetric N/I/F semi-MTJs with the strong Rashba spin-orbit coupling (SOC) at the I/F interface and injected current perpendicular to that plane; and (iii) current-driven spin density within a clean ferromagnetic Rashba spin-split two-dimensional electron gas (2DEG) which generates SO torque in laterally patterned N/F/I heterostructures when such 2DEG is located at the N/F interface and injected charge current flows parallel to the plane.

cond-mat.mes-hall↗

Spin-charge conversion in multiterminal Aharonov-Casher ring coupled to precessing ferromagnets: A charge conserving Floquet-nonequilibrium Green function approach

We derive a non-perturbative solution to the Floquet-nonequilibrium Green function (Floquet-NEGF) describing open quantum systems periodically driven by an external field of arbitrary strength of frequency. By adopting the reduced-zone scheme, we obtain expressions rendering conserved charge currents for any given maximum number of photons, distinguishable from other existed Floquet-NEGF-based expressions where, less feasible, infinite number of photons needed to be taken into account to ensure the conservation. To justify our derived formalism and to investigate spin-charge conversions by spin-orbit coupling (SOC), we consider the spin-driven setups as reciprocal to the electric-driven setups in S. Souma et. al., Phys. Rev. B 70, 195346 (2004) and Phys. Rev. Lett. 94, 106602 (2005). In our setups, pure spin currents are driven by the magnetization dynamics of a precessing ferromagnetic (FM) island and then are pumped into the adjacent two- or four-terminal mesoscopic Aharonov-Casher (AC) ring of Rashba SOC where spin-charge conversions take place. Our spin-driven results show reciprocal features that excellently agree with the findings in the electric-driven setups mentioned above. We propose two types of symmetry operations, under which the AC ring Hamiltonian is invariant, to argue the relations of the pumped/converted currents in the leads within the same or between different pumping configurations. The symmetry arguments are independent of the ring width and the number of open channels in the leads, terminals, and precessing FM islands, In particular, net pure in-plane spin currents and pure spin currents can be generated in the leads for certain setups of two terminals and two precessing FM islands with the current magnitude and polarization direction tunable by the pumping configuration, gate voltage covering the two-terminal AC ring in between the FM islands.

cond-mat.mes-hall↗

Spin-transfer torque and spin-polarization in topological-insulator/ferromagnet vertical heterostructures

We predict an unconventional spin-transfer torque (STT) acting on the magnetization of a free ferromagnetic (F) layer within N/TI/F vertical heterostructures which originates from strong spin-orbit coupling (SOC) on the surface of a three-dimensional topological insulator (TI), as well as from charge current becoming spin-polarized in the direction of transport as it flows from the normal metal (N) across the bulk of the TI slab. Unlike conventional STT in symmetric F'/I/F magnetic tunnel junctions, where only the in-plane STT component is non-zero in the linear response, both the in-plane and perpendicular torque are sizable in N/TI/F junctions while not requiring fixed F' layer as spin-polarizer which is advantageous for spintronic applications. Using the nonequilibrium Born-Oppenheimer treatment of interaction between fast conduction electrons and slow magnetization, we derive a general Keldysh Green function-based STT formula which makes it possible to analyze torque in the presence of SOC either in the bulk or at the interface of the free F layer.

cond-mat.mes-hall↗

Charge pumping by magnetization dynamics in magnetic and semi-magnetic tunnel junctions with interfacial Rashba or bulk extrinsic spin-orbit couplings

We develop a time-dependent nonequilibrium Green function (NEGF) approach to the problem of spin pumping by precessing magnetization in one of the ferromagnetic layers within F/I/F magnetic tunnel junctions (MTJs) or F/I/N semi-MTJs in the presence of intrinsic Rashba spin-orbit coupling (SOC) at the F/I interface or the extrinsic SOC in the bulk of F layers of finite thickness (F-ferromagnet; N-normal metal; I-insulating barrier). To express the time-averaged pumped charge current, or the corresponding dc voltage signal in open circuits that was measured in recent experiments on semi-MTJs [T. Moriyama et al., Phys. Rev. Lett. 100, 067602 (2008)], we construct a novel solution for the double-time-Fourier-transformed NEGFs. The two energy arguments of NEGFs in this representation are connected by the Floquet theorem describing multiphoton emission and absorption processes. Within this fully quantum-mechanical treatment of the conduction electrons, we find that: (i) only in the presence of the interfacial Rashba SOC the non-zero dc pumping voltage in F/I/N semi-MTJ can emerge at the adiabatic level (i.e., proportional to microwave frequency); (ii) a unique signature of this charge pumping phenomenon, which disappears if Rashba SOC is not located with the precessing F layer, is dc pumping voltage that changes sign as the function of the precession cone angle; (iii) unlike standard spin pumping in the absence of SOCs, where one emitted or absorbed microwave photon is sufficient to match the exact solution in the frame rotating with the magnetization, the presence of the Rashba SOC requires to take into account up to ten photons in order to reach the asymptotic value of pumped charge current; (iv) disorder within F/I/F MTJs can enhance the dc pumping voltage in the quasiballistic transport regime; ...

cond-mat.mes-hall↗

Microwave-driven ferromagnet--topological-insulator heterostructures: The prospect for giant spin battery effect and quantized charge pump devices

We study heterostructures where a two-dimensional topological insulator (TI) is attached to two normal metal (NM) electrodes while an island of a ferromagnetic insulator (FI) with precessing magnetization covers a portion of its lateral edges to induce time-dependent exchange field underneath via the magnetic proximity effect. When the FI island covers both lateral edges, such device pumps pure spin current in the absence of any bias voltage, thereby acting as an efficient spin battery with giant output current even at very small microwave power input driving the precession. When only one lateral edge is covered by the FI island, both charge and spin current are pumped into the NM electrodes. We delineate conditions for the corresponding conductances (current-to-microwave-frequency ratio) to be quantized in a wide interval of precession cone angles, which is robust with respect to weak disorder and can be further extended by changes in device geometry.

cond-mat.mes-hall↗

Transverse Plasma Waves and the Effects of Capacitive Coupling in Long Intrinsic Josephson Junctions

In this paper we investigate the excitation of longitudinal and transverse plasma waves in intrinsic Josephson junctions. We consider the outermost branch of IV characteristic (IVc) in current biased case and try to find the conditions in which plasma waves can be excited. We change the parameters of the system and get the corresponding breakpoint current at which the plasma waves start to initiate. We present specifically the modes containing only transverse waves where we can have radiation. As a result we find the range of parameters that the system can radiate.

cond-mat.supr-con↗