arXiv subjects

Fauzia Jabeen

Publications and source records attributed to Fauzia Jabeen.

9 recordsLinked to original sources

arXiv2025

Indirect Excitons and Many-body Interactions in InGaAs Double Quantum Wells

Spatially indirect excitons in semiconductor quantum wells are relevant to basic research and device applications because they exhibit enhanced tunability, delocalized wave functions, and potentially longer lifetimes relative to direct excitons. Here we investigate the properties of indirect excitons and their coupling interactions with direct excitons in asymmetric InGaAs double quantum wells using optical multidimensional coherent spectroscopy and photoluminescence excitation spectroscopy. Analyses of the spectra confirm a strong influence of many-body effects, and reveal that excited-state zero-quantum coherences between direct and indirect excitons in the quantum wells dephase faster than the much higher-energy single-quantum coherences between excitonic excited states and ground states. The results also suggest an important energy-dependent role of continuum states in mediating system dynamics, and they indicate that dephasing mechanisms are associated with uncorrelated or anticorrelated energy-level fluctuations.

cond-mat.mes-hall↗

arXiv2024

Topological Optical Waveguiding of Exciton-Polariton Condensates

One-dimensional models with topological non-trivial band structures are a simple and effective way to study novel and exciting concepts in topological photonics. In this work we are studying the propagation of light-matter quasi-particles, so called exciton-polaritons, in waveguide arrays. Specifically, we are investigating topological states at the interface between dimer chains, characterized by a non-zero winding number. In order to exercise precise control over the polariton propagation, we study non-resonant laser excitation as well as resonant excitation in transmission geometry. The results highlight a new platform for the study of quantum fluids of light and non-linear optical propagation effects in coupled semiconductor waveguides.

physics.optics↗

arXiv2024

An electrically pumped topological polariton laser

With a seminal work of Raghu and Haldane in 2008, concepts of topology have been successfully introduced in a wide range of optical systems, emulating specific lattice Hamiltonians. Certainly, one of the most promising routes to an application of topological photonics in an actual device are topological lasers, where efficient and highly coherent lasing from a topologically non-trivial mode is achieved. While some attempts have been made to excite such structures electrically, the majority of published fundamental experiments use a form of laser excitation. In this paper, we use a lattice of vertical resonator polariton micropillars to form an exponentially localized topological Su-Schrieffer-Heeger defect. Upon electrical excitation of the p-i-n doped structure, the system unequivocally shows polariton lasing from the topological defect using a carefully placed gold contact. Despite the presence of doping and electrical contacts, the polariton band structure clearly preserves its topological properties. At high excitation power the Mott density is exceeded leading to highly efficient lasing in the weak coupling regime. This work is an important step towards applied topological lasers using vertical resonator microcavity structures.

physics.optics↗

arXiv2023

Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range

Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed recently is to use a metamorphic InGaAs buffer that redshifts the emission by reducing strain. However, the impact of such a buffer causes also a simultaneous modification of other quantum dot properties. Knowledge of these effects is crucial for actual implementations of QD-based non-classical light sources for quantum communication schemes. Here, we thoroughly study single GaAs-based quantum dots grown by molecular-beam epitaxy on specially designed, digital-alloy InGaAs metamorphic buffers. With a set of structures varying in the buffer indium content and providing quantum dot emission through the telecom spectral range up to 1.6 $μ$m, we analyze the impact of the buffer and its composition on QD structural and optical properties. We identify the mechanisms of quantum dot emission shift with varying buffer composition. We also look into the charge trapping processes and compare excitonic properties for different growth conditions with single-dot emission successfully shifted to both, the second and the third telecom windows.

cond-mat.mes-hall↗

arXiv2022

Grating-based microcavity with independent control of resonance energy and linewidth for non-Hermitian polariton system

Exciton-polaritons have become an emerging platform for implementing non-Hermitian physics. The implementation commonly requires control of both the real and imaginary parts of the eigenmodes of the system. We present an experimental method to achieve this purpose using microcavities with sub-wavelength gratings as reflectors. The reflectivity and reflection phase of the grating can be changed by its geometric parameters and they determine the energy and linewidth of the polariton modes. We demonstrate that this method allows a wide range of possible polariton energy and linewidth, suitable for implementing non-Hermitian polariton systems with coupled modes.

physics.optics↗

arXiv2019

Anderson localisation in steady states of microcavity polaritons

We present an experimental signature of the Anderson localisation of microcavity polaritons, and provide a systematic study of the dependence on disorder strength. We reveal a controllable degree of localisation, as characterised by the inverse-participation ratio, by tuning the positional disorder of arrays of interacting mesas. This constitutes the realisation of disorder-induced localisation in a driven-dissipative system. In addition to being an ideal candidate for investigating localisation in this regime, microcavity polaritons hold promise for low-power, ultra-small devices and their localisation could be used as a resource in quantum memory and quantum information processing.

cond-mat.quant-gas↗

arXiv2017

Periodic squeezing in a polariton Josephson junction

The use of a Kerr nonlinearity to generate squeezed light is a well-known way to surpass the quantum noise limit along a given field quadrature. Nevertheless, in the most common regime of weak nonlinearity, a single Kerr resonator is unable to provide the proper interrelation between the field amplitude and squeezing required to induce a sizable deviation from Poissonian statistics. We demonstrate experimentally that weakly coupled bosonic modes allow exploration of the interplay between squeezing and displacement, which can give rise to strong deviations from the Poissonian statistics. In particular, we report on the periodic bunching in a Josephson junction formed by two coupled exciton-polariton modes. Quantum modeling traces the bunching back to the presence of quadrature squeezing. Our results, linking the light statistics to squeezing, are a precursor to the study of nonclassical features in semiconductor microcavities and other weakly nonlinear bosonic systems.

quant-ph↗

arXiv2013

Electrical transport in C-doped GaAs nanowires: surface effects

The resistivity and the mobility of Carbon doped GaAs nanowires have been studied for different doping concentrations. Surface effects have been evaluated by comparing upassivated with passivated nanowires. We directly see the influence of the surface: the pinning of the Fermi level and the consequent existence of a depletion region lead to an increase of the mobility up to 30 cm^2/(V*s) for doping concentrations lower than 3*10^18 cm^-3. Electron beam induced current measurements show that the minority carrier diffusion path can be as high as 190 nm for passivated nanowires.

cond-mat.mtrl-sci↗

arXiv2011

Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires

We present an original approach to fabricate single GaAs/AlGaAs core-shell nanowire with robust and reproducible transport properties. The core-shell structure is buried in an insulating GaAs overlayer and connected as grown in a two probe set-up using the highly doped growth substrate and a top diffused contact. The measured conductance shows a non-ohmic behavior with temperature and voltage-bias dependences following power laws, as expected for a quasi-1D system.

cond-mat.mtrl-sci↗