Federica Messi | Searcharxiv

arXiv2026

Boron Co-Alloying in AlScN Wurtzite Ferroelectrics: Insights from an 850-Sample Combinatorial Study

AlScN wurtzite ferroelectrics are promising candidates for energy-efficient non-volatile memory. However, AlScN suffers from a high coercive field and reduced cycling endurance, and the limited tunability of its properties constrains further optimization. Co-doping AlScN with boron offers the promise of independently tailoring the chemical and structural properties, making AlScBN an attractive quaternary system. This material has already been explored for a few selected compositions, however, no systematic study of the full AlScBN compositional space exists. A combinatorial approach consisting of gradient deposition with HiPIMS at low temperatures of 250{\deg}C and automatic analysis of film properties allowed us to analyze a total of 850 unique samples within the AlScBN phase space. In addition to a full screening of the materials' chemical and structural properties, we fabricate and characterize combinatorial device libraries. XPS charge transfer analysis experimentally confirms that bond ionicity correlates with a reduction in the coercive field for AlScN and AlScBN systems, opposite trends are instead observed for AlBN. While the films maintain a high remanent polarization of 130-150 {\mu}C/cm2, Sc and B co-doping reduces the coercive field from 7 MV/cm to 3 MV/cm. Notably, B co-alloying lowers the amount of Sc needed to lower the coercive field, reducing reliance on this scarce element. In addition, we find that co-alloying with B, notably improves cycling endurance, which is related to a reduction in defect density. These results establish AlScBN as a scalable, CMOS-compatible ferroelectric, positioning it as an interesting alternative to AlScN.

cond-mat.mtrl-sci↗

arXiv2025

Ferroelectric AlScN thin films with enhanced polarization and low leakage enabled by high-power impulse magnetron sputtering

The demand for efficient data processing motivates a shift toward in-memory computing architectures. Ferroelectric materials, particularly AlScN, show great promise for next-generation memory devices. However, their widespread application is limited due challenges such as high coercive fields, leakage currents and limited stability. Our work introduces a novel synthesis approach for ferroelectric AlScN thin films using high-power impulse magnetron sputtering (HiPIMS). Through a combinatorial study, we investigate the effect of scandium content and substrate bias on the ferroelectric properties of AlScN films deposited using metal-ion synchronized (MIS) HiPIMS. Leveraging the high ionization rates of HiPIMS and optimally timed substrate bias potentials, we enhance the adatom mobility at low temperatures. Our films exhibit a high degree of texture and crystallinity as well as low roughness at temperatures as low as 250{\deg}C. Most importantly, the films exhibit coercive fields comparable to state-of-the-art values (5 MV/cm) with significantly enhanced remanent polarization (158-172.0 {\mu}C/cm2). Notably, the remanent polarization remains stable across varying scandium concentrations. We further evaluate cycling stability and leakage current to assess suitability for memory applications. This study demonstrates HiPIMS as a scalable and CMOS compatible technique for synthesizing high-quality ferroelectric AlScN films, paving the way for their application in non-volatile memory applications.

physics.app-ph↗