arXiv subjects

Federico Bisti

Publications and source records attributed to Federico Bisti.

14 recordsLinked to original sources

arXiv2026

Twistronic control of shift current in multilayer moiré system

The bulk photovoltaic effect in non-centrosymmetric materials provides an alternative mechanism for the conversion of light into a current response compared to p-n junctions. Among its various contributions, the shift current is particularly attractive because it is governed by the geometric properties of electronic wavefunctions and can generate large photocurrents in low-dimensional materials. Here, we investigate the evolution of the shift current response in mono-, bi-, and trilayer H-MoS2, as well as in twisted moiré bilayers and trilayers. To describe large moiré supercells we develop a Slater-Koster tight-binding model parametrized from first-principles calculations. The resulting electronic structures and shift-current responses are compared with density functional theory calculations and Wannier-interpolated results to verify the accuracy of the approach. The model accurately reproduces the electronic structure near the band edges and captures the main spectral features of the shift current conductivity. We show that twisting breaks the crystal symmetry and activates additional conductivity tensor components that are forbidden in untwisted structures, leading to new tunable in-plane photocurrent components. Analysis of the shift distance reveals a direct connection between the twist-induced modification of the electronic wavefunctions and the increase of the nonlinear response. Our results establish the twist angle as an effective parameter for engineering shift current generation in multilayer transition-metal dichalcogenide base systems and demonstrate that tight-binding approaches provide a practical route for exploring nonlinear optical phenomena in large-scale moiré materials beyond the limits of conventional first-principles calculations.

cond-mat.mtrl-sci↗

arXiv2026

Ligand-mediated Origin of Altermagnetic Spin-Splitting

Altermagnets host spin-split electronic bands despite zero net magnetization, opening new routes for spintronics beyond conventional ferromagnets. Going beyond symmetry-based classifications, which specify allowed terms but not their hierarchy, here we use first-principles calculations and Wannier Hamiltonian engineering to uncover the microscopic bonding contributions of altermagnetic spin splitting in the $g$-wave altermagnet Co$_{1/4}$NbSe$_2$. We show that the splitting is captured by a short-range tight-binding model, establishing its local origin. By selectively controlling hopping channels, we demonstrate that the dominant contribution arises not from direct magnetic-ion hopping, but from ligand-mediated hybridization that transfers anisotropy to itinerant states. This identifies ligand-assisted coupling as the key mechanism of altermagnetic spin splitting and provides a microscopic bridge between minimal models and symmetry guided first-principles material searches, enabling real-space design of altermagnetic functionality.

cond-mat.mtrl-sci↗

arXiv2026

Plasmon Engineering in Intercalated 2H-TaS$_2$

Plasmons in low dimensional materials provide a powerful platform for nanoscale control of light matter interactions, yet strategies to tailor their coherence and dissipation remain limited. Here, we demonstrate that transition metal intercalation offers a fundamentally distinct route to engineer plasmonic response in layered materials. By combining high-resolution core-level photoemission spectroscopy with first-principles calculations, we show that Fe and Co intercalation in 2H-TaS2 does not act as conventional electron doping, but instead reshapes the low energy electronic structure through orbital hybridization and structural reconstruction. This process introduces a dense continuum of low energy excitations that efficiently damp and ultimately suppress the plasmon mode. First principle calculations of the energy loss function reveal a transition from a well defined collective excitation to an overdamped response, signaling the breakdown of coherent charge dynamics. Our results establish intercalation as a chemically controlled pathway to tune plasmon losses and dielectric response in quantum van der Waals materials, providing a new design principle for plasmonic and optoelectronic functionalities at the nanoscale.

cond-mat.mtrl-sci↗

arXiv2026

Emergent 3D Fermiology and Magnetism in an Intercalated Van der Waals System

Intercalation of magnetic atoms into van der Waals materials provides a versatile platform for tailoring unconventional magnetic properties. However, its impact on electronic dimensionality and exchange mechanisms remains poorly understood. Using Fe-intercalated TaS$_2$ as a model system, we combine X-ray absorption and resonant inelastic scattering with angle-resolved photoemission and first-principles calculations to reveal that intercalation reshapes the host electronic structure. We identify a spin-polarized intercalant-host hybridized band with pronounced out-of-plane dispersion crossing the Fermi level, providing an itinerant channel for interlayer magnetic exchange. This mechanism explains the breakdown of a purely atomic picture and establishes a direct link between lattice geometry, electronic dispersion, and magnetic order. Our findings demonstrate that intercalant-induced itinerancy enables tunable interlayer coupling in otherwise layered magnets, offering a general microscopic framework for engineering magnetic dimensionality in a broad class of intercalated vdW materials.

cond-mat.mtrl-sci↗

arXiv2025

Darkness in interlayer and charge density wave states of 2H-TaS2

The wave-like nature of electrons is evident from quantum interference effects observed during the photoemission process. When there are different nuclei in the unit cell of a crystal and/or structural distortions, photo-electron wavefunctions can interfere, giving rise to peculiar intensity modulation of the spectrum, which can also hide energy states in a photoemission experiment. The 2H phase of transition metal dichalcogenides, with two nonequivalent layers per unit cell and charge density wave distortion, is an optimal platform for such effects to be observed. Here, we discover undetectable states in 2H-TaS2, interpreting high-resolution angular resolved photoemission spectroscopy considering interference effects of the correlated electron wave functions. In addition, phase mismatching induced by the charge density wave distortion, results in evident signature of the phase transition in the photoemission spectrum. Our results highlight the importance of quantum interference, electronic correlations and structural distortion to understand the physics of layered materials.

cond-mat.str-el↗

arXiv2024

Doping the spin-polarized Graphene minicone on Ni(111)

In the attempt to induce spin-polarized states in graphene, rare-earth deposition on Gr/Co(0001) has been demonstrated to be a successful strategy: the coupling of graphene with the cobalt substrate provides spin-polarized conical-shaped states (mini-cone) and the rare-earth deposition brings these states at the Fermi level. In this manuscript we theoretically explore the feasibility of an analogue approach applied on Gr/Ni(111) doped with rare-earth ions. Even if not well mentioned in the lecture also this system owns a mini-cone, similar to the cobalt case. By testing different rare-earth ions, not only we suggest which one can provide the required doping but we explain the effect behind this proper charge transfer.

cond-mat.mtrl-sci↗

arXiv2022

Unidirectional Rashba Spin Splitting in Single Layer WS$_{2(1-x)}$Se$_{2x}$ alloy

Atomically thin two-dimensional (2D) layered semiconductors such as transition metal dichalcogenides (TMDs) have attracted considerable attention due to their tunable band gap, intriguing spin-valley physics, piezoelectric effects and potential device applications. Here we study the electronic properties of a single layer WS$_{1.4}$Se$_{0.6}$ alloys. The electronic structure of this alloy, explored using angle resolved photoemission spectroscopy, shows a clear valence band structure anisotropy characterized by two paraboloids shifted in one direction of the k-space by a constant in-plane vector. This band splitting is a signature of a unidirectional Rashba spin splitting with a related giant Rashba parameter of 2.8 0.7 eV . The combination of angle resolved photoemission spectroscopy with piezo force microscopy highlights the link between this giant unidirectional Rashba spin splitting and an in-plane polarization present in the alloy. These peculiar anisotropic properties of the WS$_{1.4}$Se$_{0.6}$ alloy can be related to local atomic orders induced during the growth process due the different size and electronegativity between S and Se atoms. This distorted crystal structure combined to the observed macroscopic tensile strain, as evidenced by photoluminescence, displays electric dipoles with a strong in-plane component, as shown by piezoelectric microscopy. The interplay between semiconducting properties, in-plane spontaneous polarization and giant out-of-plane Rashba spin-splitting in this two-dimensional material has potential for a wide range of applications in next-generation electronics, piezotronics and spintronics devices.

cond-mat.mtrl-sci↗

arXiv2022

Can the "shadow" of graphene band clarify its flatness?

Graphene band renormalization at the proximity of the van Hove singularity (VHS) has been investigated by angle-resolved photoemission spectroscopy (ARPES) on the Li-doped quasi-freestanding graphene on the cobalt (0001) surface. The absence of graphene band hybridization with the substrate, the doping contribution well represented by a rigid energy shift and the excellent electron-electron interaction screening ensured by the metallic substrate offer a privileged point of view for such investigation. A clear ARPES signal is detected along the M point of the graphene Brillouin zone, giving rise to an apparent flattened band. By simulating the graphene spectral function from the density functional theory calculated bands, we demonstrate that the photoemission signal along the M point originates from the "shadow" of the spectral function of the unoccupied band above the Fermi level. Such interpretation put forward the absence of any additional strong correlation effects at the VHS proximity, reconciling the mean field description of the graphene band structure even in the highly doped scenario.

cond-mat.str-el↗

arXiv2022

Evidence for Highly p-type doping and type II band alignment in large scale monolayer WSe2 /Se-terminated GaAs heterojunction grown by Molecular beam epitaxy

Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer WSe2 grown by molecular beam epitaxy on Se-terminated GaAs(111)B. Reflection high-energy electron diffraction images exhibit sharp streaky features indicative of a high-quality WSe2 layer produced via vdW epitaxy. This is confirmed by in-plane x-ray diffraction. The single layer of WSe2 and the absence of interdiffusion at the interface are confirmed by high resolution X-ray photoemission spectroscopy and high-resolution transmission microscopy. Angle-resolved photoemission investigation revealed a well-defined WSe2 band dispersion and a high p-doping coming from the charge transfer between the WSe2 monolayer and the Se-terminated GaAs substrate. By comparing our results with local and hybrid functionals theoretical calculation, we find that the top of the valence band of the experimental heterostructure is close to the calculations for free standing single layer WSe2. Our experiments demonstrate that the proximity of the Se-terminated GaAs substrate can significantly tune the electronic properties of WSe2. The valence band maximum (VBM, located at the K point of the Brillouin zone) presents an upshifts of about 0.56 eV toward the Fermi level with respect to the VBM of WSe2 on graphene layer, which is indicative of high p-type doping and a key feature for applications in nanoelectronics and optoelectronics.

cond-mat.mes-hall↗

arXiv2020

Indirect to direct band gap crossover in two-dimensional WS2(1-x)Se2x alloys

In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct bandgap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show that for different alloy compositions of WS2(1-x)Se2x this trend may be significantly affected by the alloy content and we demonstrate that the sample with the highest Se ratio presents a strongly reduced effect. The highest micro-PL intensity is found for bilayer WS2(1-x)Se2x (x = 0.8) with a decrease of its maximum value by only a factor of 2 when passing from mono- to bi-layer. To better understand this factor and explore the layer-dependent band structure evolution of WS2(1-x)Se2x, we performed a nano-angle resolved photoemission spectroscopy study coupled with first-principles calculations. We find that the high micro-PL value for bilayer WS2(1-x)Se2x (x = 0.8) is due to the overlay of direct and indirect optical transitions. This peculiar high PL intensity in WS2(1-x)Se2x opens the way for spectrally tunable light-emitting devices.

cond-mat.mes-hall↗

arXiv2020

Electron-polaron dichotomy of charge carriers in perovskite oxides

Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not always fully understood. Unlike most TMOs, minute doping in CaMnO3 induces a metallic state without any structural transformations. This material is thus an ideal platform to explore band formation through the MIT. Here, we use angle-resolved photoemission spectroscopy to visualize how electrons delocalize and couple to phonons in CaMnO3. We show the development of a Fermi surface where mobile electrons coexist with heavier carriers, strongly coupled polarons. The latter originate from a boost of the electron-phonon interaction (EPI). This finding brings to light the role that the EPI can play in MITs even caused by purely electronic mechanisms. Our discovery of the EPI-induced dichotomy of the charge carriers explains the transport response of Ce-doped CaMnO3 and suggests strategies to engineer quantum matter from TMOs.

cond-mat.mtrl-sci↗

arXiv2019

Evidence of Direct Electronic Band Gap in two-dimensional van der Waals Indium Selenide crystals

Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Precise experimental determination of the electronic structure of InSe is sorely needed for better understanding of potential properties and device applications. Here, combining scanning tunneling spectroscopy (STS) and two-photon photoemission spectroscopy (2PPE), we demonstrate that InSe exhibits a direct band gap of about 1.25 eV located at the Gamma point of the Brillouin zone (BZ). STS measurements underline the presence of a finite and almost constant density of states (DOS) near the conduction band minimum (CBM) and a very sharp one near the maximum of the valence band (VMB). This particular DOS is generated by a poorly dispersive nature of the top valence band, as shown by angle resolved photoemission spectroscopy (ARPES) investigation. technologies. In fact, a hole effective mass of about m/m0 = -0.95 gammaK direction) was measured. Moreover, using ARPES measurements a spin-orbit splitting of the deeper-lying bands of about 0.35 eV was evidenced. These findings allow a deeper understanding of the InSe electronic properties underlying the potential of III-VI semiconductors for electronic and photonic

cond-mat.mes-hall↗

arXiv2017

Fermi surface and effective masses in photoemission response of the (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ superconductor

The angle-resolved photoemission spectra of the superconductor (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ have been investigated both experimentally and theoretically. Our results explain the previously obscured origins of all salient features of the ARPES response of this paradigm pnictide compound and reveal the origin of the Lifshitz transition. Comparison of calculated ARPES spectra with the underlying DMFT band structure shows an important impact of final state effects, which results for three-dimensional states in a deviation of the ARPES spectra from the true spectral function. In particular, the apparent effective mass enhancement seen in the ARPES response is not an entirely intrinsic property of the quasiparticle valence bands but may have a significant extrinsic contribution from the photoemission process and thus differ from its true value. Because this effect is more pronounced for low photoexcitation energies, soft-X-ray ARPES delivers more accurate values of the mass enhancement due to a sharp definition of the 3D electron momentum.

cond-mat.supr-con↗

arXiv2016

Band Structure of EuO/Si Spin Contact: Justification for Silicon Spintronics

Silicon spintronics requires injection of spin-polarized carriers into Si. An emerging approach is direct electrical injection from a ferromagnetic semiconductor - EuO being the prime choice. Functionality of the EuO/Si spin contact is determined by the interface band alignment. In particular, the band offset should fall within the 0.5-2 eV range. We employ soft-X-ray ARPES to probe the electronic structure of the buried EuO/Si interface with momentum resolution and chemical specificity. The band structure reveals a conduction band offset of 1.0 eV attesting the technological potential of the EuO/Si system.

cond-mat.mtrl-sci↗