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Fei Pang

Publications and source records attributed to Fei Pang.

25 records · Page 2Linked to original sources

Layer sliding and twisting induced electronic transitions in correlated magnetic 1T-NbSe2 bilayers

Correlated two-dimensional (2D) layers, like 1T-phases of TaS2, TaSe2 and NbSe2, exhibit rich tunability through varying interlayer couplings, which promotes the understanding of electron-correlation in the 2D limit. However, the coupling mechanism is, so far, poorly understood and was tentatively ascribed to interactions among the d_(z^2 ) orbitals of Ta or Nb atoms. Here, we theoretically show that the interlayer hybridization and localization strength of interfacial Se pz orbitals, rather than Nb d_(z^2 ) orbitals, govern the variation of electron-correlated properties upon interlayer sliding or twisting in correlated magnetic 1T-NbSe2 bilayers. Each of the both layers is in a star-of-David (SOD) charge-density-wave phase. Geometric and electronic structures, and magnetic properties of 28 different stacking configurations were examined and analyzed using density-functional-theory calculations. We found that the SOD contains a localized region (Reg-L), in which interlayer Se pz hybridization plays a paramount role in varying the energy levels of the two Hubbard bands. These variations lead to three electronic transitions among four insulating states, which demonstrated the effectiveness of interlayer interactions to modulate correlated magnetic properties in a prototypical correlated magnetic insulator.

cond-mat.mtrl-sci↗

Emergent Electronic Kagome Lattice in Correlated Charge-Density-Wave State of 1T-TaS$_2$

Quantum materials with tunable correlated and/or topological electronic states, such as the electronic Kagome lattice, provide an ideal platform to study the exotic quantum properties. However, the real-space investigations on the correlated electronic Kagome lattice have been rarely reported. Herein, we report on the electronic Kagome lattice emerging in the correlated charge-density-wave (CDW) state of 1T-TaS$_2$ at ~200 K via variable-temperature scanning tunneling microscopy (VT-STM). This emergent Kagome lattice can be considered a fractional electron-filling superstructure with reduced translational and rotational symmetries, confirmed by STM measurements and density functional theory simulations. The characteristic band structure and density of states of this electronic Kagome lattice are further explored based on theoretical calculations. Our results demonstrate a self-organized electronic Kagome lattice from the correlated CDW state via the effective tuning parameter of temperature and provide a platform to directly explore the interplay of correlated electrons and topological physics.

cond-mat.mtrl-sci↗

Twisted Angle-Dependent Work Functions in CVD-Grown Twisted Bilayer Graphene by Kelvin Probe Force Microscopy

Tailoring the interlayer twist angle of bilayer graphene (BLG) has a significant influence on its electronic properties, including superconductivity, topological transitions, ferromagnetic states and correlated insulating states. These exotic electronic properties are sensitively dependent on the work functions of bilayer graphene samples. Here, the twisted angle-dependent work functions of CVD-grown twisted bilayer graphene (tBLG) are detailed investigated by Kelvin Probe Force Microscopy (KPFM) in combination with Raman spectra. The thickness-dependent surface potentials of Bernal-stacked multilayer graphene were measured. The AB-BLG and tBLG are directly determined by KPFM due to their twist angle-specific surface potentials. The detailed relationship of twist angles and surface potentials are further obtained by the in-situ combination investigation of KPFM and Raman spectra measurements. The thermal stability of tBLG was further explored through controlled annealing process. Our work provides the twisted angle-dependent surface potentials of tBLG and lays the foundation for further exploring their twist-angle-dependent novel electronic properties.

cond-mat.mtrl-sci↗

Coexisting Ferromagnetic-antiferromagnetic Phase and Manipulation in Magnetic Topological Insulator MnBi4Te7

Magnetic topological insulators (MTIs) have received a lot of attention due to the existence of various quantum phenomena such as quantum anomalous Hall effect (QAHE) and topological magnetoelectric effect, etc. The intrinsic superlattice-like layered MTIs, MnBi2Te4/(Bi2Te3)n, have been extensively investigated mainly through the transport measurements, while the direct investigation of their superlattice-sensitive magnetic behaviors is relatively rare. Here, we report a microscopic real-space investigation of magnetic phase behaviors in MnBi4Te7 using cryogenic magnetic force microscopy (MFM). The intrinsic robust A-type antiferromagnetic (AFM), and emerged surface spin-flop (SSF), canted AFM (CAFM), ferromagnetic (FM)+CAFM, forced FM phases are sequentially visualized via the increased external magnetic field, in agreement with the metamagnetic behavior in the M-H curve. The temperature-dependent magnetic phase evolution behaviors are further investigated to obtain the complete H-T phase diagram of MnBi4Te7. The tentative local phase manipulation via the stray field of the magnetic tip is demonstrated by transforming the AFM to FM phase in its surface layers of MnBi4Te7. Our study the not only provide key real-space ingredients for understanding their complicated magnetic, electronic, and topological properties of these intrinsic MTIs, but also suggest new directions for manipulating spin textures and locally controlling their exotic properties.

cond-mat.mtrl-sci↗

Epitaxial fabrication of AgTe monolayer on Ag(111) and the sequential growth of Te film

Transition-metal chalcogenides (TMCs) materials have attracted increasing interest both for fundamental research and industrial applications. Among all these materials, two-dimensional (2D) compounds with honeycomb-like structure possess exotic electronic structures. Here, we report a systematic study of TMC monolayer AgTe fabricated by direct depositing Te on the surface of Ag(111) and annealing. Few intrinsic defects are observed and studied by scanning tunneling microscopy, indicating that there are two kinds of AgTe domains and they can form gliding twin-boundary. Then, the monolayer AgTe can serve as the template for the following growth of Te film. Meanwhile, some Te atoms are observed in the form of chains on the top of the bottom Te film. Our findings in this work might provide insightful guide for the epitaxial growth of 2D materials for study of novel physical properties and for future quantum devices.

cond-mat.mtrl-sci↗

Toplayer-Dependent Crystallographic Orientation Imaging in the Bilayer Two-Dimensional Materials with Transverse Shear Microscopy

Nanocontact properties of two-dimensional (2D) materials are closely dependent on their unique nanomechanical systems, such as the number of atomic layers and the supporting substrate. Here, we report a direct observation of toplayer-dependent crystallographic orientation imaging of 2D materials with the transverse shear microscopy (TSM). Three typical nanomechanical systems, MoS2 on the amorphous SiO2/Si, graphene on the amorphous SiO2/Si, and MoS2 on the crystallized Al2O3, have been investigated in detail. This experimental observation reveals that puckering behaviour mainly occurs on the top layer of 2D materials, which is attributed to its direct contact adhesion with the AFM tip. Furthermore, the result of crystallographic orientation imaging of MoS2/SiO2/Si and MoS2/Al2O3 indicated that the underlying crystalline substrates almost do not contribute to the puckering effect of 2D materials. Our work directly revealed the top layer dependent puckering properties of 2D material, and demonstrate the general applications of TSM in the bilayer 2D systems.

cond-mat.mtrl-sci↗

Anomalous Hall effect of ferromagnetic Fe3Sn2 single crystal with geometrically frustrated kagome lattice

The anomalous Hall effect is investigated for ferromagnetic Fe3Sn2 single crystal with geometrically frustrated kagome bilayer of Fe. The scaling behavior between anomalous Hall resistivity rho_{xy}^{A} and longitudinal resistivity rho_{xx} is quadratic and further analysis implies that the AHE in Fe3Sn2 single crystal should be dominated by the intrinsic Karplus-Luttinger mechanism rather than extrinsic skew-scattering or side-jump mechanisms. Moreover, there is a sudden jump of anomalous Hall conductivity sigma_{xy}^{A} appearing at about 100 K where the spin-reorientation transition from the c axis to the ab plane is completed. This change of sigma_{xy}^{A} might be related to the evolution of Fermi surface induced by the spin-reorientation transition.

cond-mat.str-el↗