arXiv subjects

Felix Baumberger

Publications and source records attributed to Felix Baumberger.

15 recordsLinked to original sources

arXiv2026

Quasi-one-dimensional topological band structure and van Hove singularities in monolayer TaIrTe$_4$ from laser $\mu$-ARPES

Recent transport experiments reported a quantum spin Hall insulator phase in monolayer 1T-TaIrTe$_4$ gated away from charge neutrality. This phase is not predicted by band structure calculations and has been attributed to an electronic instability induced by strong correlations at a putative van Hove singularity. Here, we investigate the electronic structure of exfoliated monolayer 1T-TaIrTe$_4$ using micro-focus laser angle resolved photoemission. We find a strongly anisotropic band structure susceptible to density wave instabilities. Our data further reveal a saddle point singularity in the density of states. However, we find that the saddle point lies at a density for which transport experiments found no anomalies. Moreover, the quasiparticle line widths suggest weak electron correlations only. This points to a secondary role of van Hove singularities and electron correlations in the transport phase diagram of monolayer 1T-TaIrTe$_4$.

cond-mat.mtrl-sci↗

arXiv2023

Provoking topology by octahedral tilting in strained SrNbO$_3$

Transition metal oxides with a wide variety of electronic and magnetic properties offer an extraordinary possibility to be a platform for developing future electronics based on unconventional quantum phenomena, for instance, the topology. The formation of topologically non-trivial states is related to crystalline symmetry, spin-orbit coupling, and magnetic ordering. Here, we demonstrate how lattice distortions and octahedral rotation in SrNbO$_3$ films induce the band topology. By employing angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations, we verify the presence of in-phase $a^0a^0c^+$ octahedral rotation in ultra-thin SrNbO$_3$ films, which causes the formation of topologically-protected Dirac band crossings. Our study illustrates that octahedral engineering can be effectively exploited for implanting and controlling quantum topological phases in transition metal oxides.

cond-mat.mtrl-sci↗

arXiv2023

Electronic structure of few-layer black phosphorus from $μ$-ARPES

Black phosphorus (BP) stands out among two-dimensional (2D) semiconductors because of its high mobility and thickness dependent direct band gap. However, the quasiparticle band structure of ultrathin BP has remained inaccessible to experiment thus far. Here we use a recently developed laser-based micro-focus angle resolved photoemission ($μ$-ARPES) system to establish the electronic structure of 2-9 layer BP from experiment. Our measurements unveil ladders of anisotropic, quantized subbands at energies that deviate from the scaling observed in conventional semiconductor quantum wells. We quantify the anisotropy of the effective masses and determine universal tight-binding parameters which provide an accurate description of the electronic structure for all thicknesses.

cond-mat.mes-hall↗

arXiv2022

Observation of flat $Γ$ moiré bands in twisted bilayer WSe$_2$

The recent observation of correlated phases in transition metal dichalcogenide moiré systems at integer and fractional filling promises new insight into metal-insulator transitions and the unusual states of matter that can emerge near such transitions. Here, we combine real- and momentum-space mapping techniques to study moiré superlattice effects in 57.4$^{\circ}$ twisted WSe$_2$ (tWSe$_2$). Our data reveal a split-off flat band that derives from the monolayer $Γ$ states. Using advanced data analysis, we directly quantify the moiré potential from our data. We further demonstrate that the global valence band maximum in tWSe$_2$ is close in energy to this flat band but derives from the monolayer K-states which show weaker superlattice effects. These results constrain theoretical models and open the perspective that $Γ$-valley flat bands might be involved in the correlated physics of twisted WSe$_2$.

cond-mat.str-el↗

arXiv2022

Anomalous quasiparticles in the zone center electron pocket of the kagom\'e ferromagnet Fe3Sn2

One material containing kagome bilayers and featuring both exceptional magnetism and electron transport is the ferromagnetic metal Fe3Sn2. Notwithstanding the widespread interest in Fe3Sn2, crystal twinning, difficulties in distinguishing surface from bulk states, and a large unit cell have until now prevented the synchrotron-based spectroscopic observation of sharply resolved quasiparticles near the Fermi surface which could be responsible for the anomalous properties appearing at low temperatures for the material. Here we report microfocused laser-based angle-resolved photoemission spectroscopy (micro-ARPES), which offers the first look at such quasiparticles. The high spatial resolution allows individual crystal twin domains to be examined in isolation, resulting in the discovery of three-fold symmetric electron pockets at the Brillouin zone (BZ) center, not predicted by early tight-binding descriptions but in agreement with density functional theory (DFT) calculations, which also feature Weyl nodes. The quasiparticles in these pockets have remarkably long mean free paths, and their Fermi surface area is consistent with reported quantum oscillations. At the same time, though, the best-defined Fermi surface is reduced at low temperature, and the quasiparticles generally are marginal in the sense that their wavelength uncertainty is of order the deviation of the quasiparticle wavelength from the Fermi vector. We attribute these manifestations of strong electron-electron interactions to a flat band predicted by our DFT to lie just above the dispersive bands seen in this experiment. Thus, beyond demonstrating the impact of twin averaging for ARPES measurements of band structures, our experiments reveal many-body physics unaccounted for by current theories of metallic kagome ferromagnets.

cond-mat.str-el↗

arXiv2022

A Laser-ARPES View of the 2D Electron Systems at LaAlO3/SrTiO3 and Al/SrTiO3 Interfaces

We have measured the electronic structure of the two-dimensional electron system (2DES) found at the Al/SrTiO3 (Al/STO) and LaAlO3/SrTiO3 (LAO/STO) interfaces by means of laser angle resolved photoemission spectroscopy, taking advantage of the large photoelectron escape depth at low photon energy to probe these buried interfaces. We demonstrate the possibility of tuning the electronic density in Al/STO by varying the Al layer thickness and show that the electronic structure evolution is well described by self-consistent tight binding supercell calculations, but differs qualitatively from a rigid band shift model. We show that both 2DES are strongly coupled to longitudinal optical phonons, in agreement with previous reports of a polaronic ground state in similar STO based 2DESs. Tuning the electronic density in Al/STO to match that of LAO/STO and comparing both systems, we estimate that the intrinsic LAO/STO 2DES has a bare band width of ~ 60 meV and a carrier density of ~ 6 10^13 cm-2.

cond-mat.mtrl-sci↗

arXiv2022

Electronic structure of 2D van der Waals crystals and heterostructures investigated by spatially- and angle-resolved photoemission

Angle-resolved photoemission is a direct probe of the momentum-resolved electronic structure and proved influential in the study of bulk crystals with novel electronic properties. Thanks to recent technical advances, this technique can now be applied for the first time for the study of van der Waals heterostructures built by stacking two-dimensional crystals. In this article we will present the current state of the art in angle-resolved photoemission measurements on two-dimensional materials and review this still young field. We will focus in particular on devices similar to those used in transport and optics experiments, including the latest developments on magic-angle twisted bilayer graphene and on the in-operando characterization of gate tunable devices.

cond-mat.mtrl-sci↗

arXiv2021

Metal to insulator transition at the surface of $V_2O_3$ thin films: an in-situ view

$V_2O_3$ has long been studied as a prototypical strongly correlated material. The difficulty in obtaining clean, well ordered surfaces, however, hindered the use of surface sensitive techniques to study its electronic structure. Here we show by mean of X-ray diffraction and electrical transport that thin films prepared by pulsed laser deposition can reproduce the functionality of bulk $V_2O_3$. The same films, when transferred in-situ, show an excellent surface quality as indicated by scanning tunnelling microscopy and low energy electron diffraction, representing a viable approach to study the metal-insulator transition (MIT) in $V_2O_3$ by means of angle-resolved photoemission spectroscopy. Combined, these two aspects pave the way for the use of $V_2O_3$ thin films in device-oriented heterostructures.

cond-mat.str-el↗

arXiv2020

Direct evidence for flat bands in twisted bilayer graphene from nano-ARPES

Transport experiments in twisted bilayer graphene revealed multiple superconducting domes separated by correlated insulating states. These properties are generally associated with strongly correlated states in a flat mini-band of the hexagonal moiré superlattice as it was predicted by band structure calculations. Evidence for such a flat band comes from local tunneling spectroscopy and electronic compressibility measurements, reporting two or more sharp peaks in the density of states that may be associated with closely spaced van Hove singularities. Direct momentum resolved measurements proved difficult though. Here, we combine different imaging techniques and angle resolved photoemission with simultaneous real and momentum space resolution (nano-ARPES) to directly map the band dispersion in twisted bilayer graphene devices near charge neutrality. Our experiments reveal large areas with homogeneous twist angle that support a flat band with spectral weight that is highly localized in momentum space. The flat band is separated from the dispersive Dirac bands which show multiple moiré hybridization gaps. These data establish the salient features of the twisted bilayer graphene band structure.

cond-mat.str-el↗

arXiv2020

A laser-ARPES study of LaNiO3 thin films grown by sputter deposition

Thin films of the correlated transition-metal oxide LaNiO$_3$ undergo a metal-insulator transition when their thickness is reduced to a few unit cells. Here, we use angle-resolved photoemission spectroscopy to study the evolution of the electronic structure across this transition in a series of epitaxial LaNiO$_3$ films of thicknesses ranging from 19 to 2 u.c. grown in situ by RF magnetron sputtering. Our data show a strong reduction of the electronic mean free path as the thickness is reduced below 5 u.c. This prevents the system from becoming electronically two-dimensional, as confirmed by the largely unchanged Fermi surface seen in our experiments. In the insulating state we observe a strong suppression of the coherent quasiparticle peak but no clear gap. These features resemble previous observations of the insulating state of NdNiO$_3$.

cond-mat.str-el↗

arXiv2018

Microfocus laser-ARPES on encapsulated mono-, bi-, and few-layer 1T'-WTe$_2$

Two-dimensional crystals of semimetallic van der Waals materials hold much potential for the realization of novel phases, as exemplified by the recent discoveries of a polar metal in few layer 1T'-WTe$_2$ and of a quantum spin Hall state in monolayers of the same material. Understanding these phases is particularly challenging because little is known from experiment about the momentum space electronic structure of ultrathin crystals. Here, we report direct electronic structure measurements of exfoliated mono-, bi-, and few-layer 1T'-WTe$_2$ by laser-based micro-focus angle resolved photoemission. This is achieved by encapsulating with monolayer graphene a flake of WTe$_2$ comprising regions of different thickness. Our data support the recent identification of a quantum spin Hall state in monolayer 1T'-WTe$_2$ and reveal strong signatures of the broken inversion symmetry in the bilayer. We finally discuss the sensitivity of encapsulated samples to contaminants following exposure to ambient atmosphere.

cond-mat.mtrl-sci↗

arXiv2017

Anisotropic exchange and spin-wave damping in pure and electron-doped Sr$_2$IrO$_4$

The collective magnetic excitations in the spin-orbit Mott insulator (Sr$_{1-x}$La$_x$)$_2$IrO$_4$ ($x=0,\,0.01,\,0.04,\, 0.1$) were investigated by means of resonant inelastic x-ray scattering. We report significant magnon energy gaps at both the crystallographic and antiferromagnetic zone centers at all doping levels, along with a remarkably pronounced momentum-dependent lifetime broadening. The spin-wave gap is accounted for by a significant anisotropy in the interactions between $J_\text{eff}=1/2$ isospins, thus marking the departure of Sr$_2$IrO$_4$ from the essentially isotropic Heisenberg model appropriate for the superconducting cuprates.

cond-mat.str-el↗

arXiv2017

Poor electronic screening in lightly doped Mott insulators observed with scanning tunneling microscopy

The effective Mott gap measured by scanning tunneling microscopy (STM) in the lightly doped Mott insulator $(\rm{Sr}_{1 -x}\rm{La}_x)_2\rm{IrO}_4$ differs greatly from values reported by photoemission and optical experiments. Here, we show that this is a consequence of the poor electronic screening of the tip-induced electric field in this material. Such effects are well known from STM experiments on semiconductors, and go under the name of tip-induced band bending (TIBB). We show that this phenomenon also exists in the lightly doped Mott insulator $(\rm{Sr}_{1 -x}\rm{La}_x)_2\rm{IrO}_4$ and that, at doping concentrations of $x\leq 4 \%$, it causes the measured energy gap in the sample density of states to be bigger than the one measured with other techniques. We develop a model able to retrieve the intrinsic energy gap leading to a value which is in rough agreement with other experiments, bridging the apparent contradiction. At doping $x \approx 5 \%$ we further observe circular features in the conductance layers that point to the emergence of a significant density of free carriers in this doping range, and to the presence of a small concentration of donor atoms. We illustrate the importance of considering the presence of TIBB when doing STM experiments on correlated-electron systems and discuss the similarities and differences between STM measurements on semiconductors and lightly doped Mott insulators.

cond-mat.str-el↗

arXiv2016

Universality of pseudogap and emergent order in lightly doped Mott insulators

It is widely believed that high-temperature superconductivity in the cuprates emerges from doped Mott insulators. The physics of the parent state seems deceivingly simple: The hopping of the electrons from site to site is prohibited because their on-site Coulomb repulsion U is larger than the kinetic energy gain t. When doping these materials by inserting a small percentage of extra carriers, the electrons become mobile but the strong correlations from the Mott state are thought to survive; inhomogeneous electronic order, a mysterious pseudogap and, eventually, superconductivity appear. How the insertion of dopant atoms drives this evolution is not known, nor whether these phenomena are mere distractions specific to hole-doped cuprates or represent the genuine physics of doped Mott insulators. Here, we visualize the evolution of the electronic states of (Sr1-xLax)2IrO4, which is an effective spin-1/2 Mott insulator like the cuprates, but is chemically radically different. Using spectroscopic-imaging STM, we find that for doping concentration of x=5%, an inhomogeneous, phase separated state emerges, with the nucleation of pseudogap puddles around clusters of dopant atoms. Within these puddles, we observe the same glassy electronic order that is so iconic for the underdoped cuprates. Further, we illuminate the genesis of this state using the unique possibility to localize dopant atoms on topographs in these samples. At low doping, we find evidence for much deeper trapping of carriers compared to the cuprates. This leads to fully gapped spectra with the chemical potential at mid-gap, which abruptly collapse at a threshold of around 4%. Our results clarify the melting of the Mott state, and establish phase separation and electronic order as generic features of doped Mott insulators.

cond-mat.str-el↗

arXiv2014

A weakly correlated Fermi liquid state with a small Fermi surface in lightly doped Sr$_3$Ir$_2$O$_7$

We characterize the electron doping evolution of (Sr$_{1-x}$La$_x$)$_3$Ir$_2$O$_7$ by means of angle-resolved photoemission. Concomitant with the metal insulator transition around $x\approx0.05$ we find the emergence of coherent quasiparticle states forming a closed small Fermi surface of volume $3x/2$, where $x$ is the independently measured La concentration. The quasiparticle weight $Z$ remains large along the entire Fermi surface, consistent with the moderate renormalization of the low-energy dispersion. This indicates a conventional, weakly correlated Fermi liquid state with a momentum independent residue $Z\approx0.5$ in lightly doped Sr$_3$Ir$_2$O$_7&.

cond-mat.str-el↗