Felix Rolf Lutz Lange

arXiv2019

Stoichiometry determination of chalcogenide superlattices by means of X-ray diffraction and its limits

In this paper we explore the potential of stoichiometry determination for chalcogenide superlattices, promising candidates for next-generation phase-change memory, via X-ray diffraction. To this end, a set of epitaxial GeTe/Sb2Te3 superlattice samples with varying layer thicknesses is sputter-deposited. Kinematical scattering theory is employed to link the average composition with the diffraction features. The observed lattice constants of the superlattice reference unit cell follow Vegard's law, enabling a straight-forward and non-destructive stoichiometry determination.

cond-mat.mtrl-sci↗

arXiv2016

Interband characterization and electronic transport control of nanoscaled GeTe/Sb$_2$Te$_3$ superlattices

The extraordinary electronic and optical properties of the crystal-to-amorphous transition in phase-change materials led to important developments in memory applications. A promising outlook is offered by nanoscaling such phase-change structures. Following this research line, we study the interband optical transmission spectra of nanoscaled GeTe/Sb$_2$Te$_3$ chalcogenide superlattice films. We determine, for films with varying stacking sequence and growth methods, the density and scattering time of the free electrons, and the characteristics of the valence-to-conduction transition. It is found that the free electron density decreases with increasing GeTe content, for sub-layer thickness below $\sim$3 nm. A simple band model analysis suggests that GeTe and Sb$_2$Te$_3$ layers mix, forming a standard GeSbTe alloy buffer layer. We show that it is possible to control the electronic transport properties of the films by properly choosing the deposition layer thickness and we derive a model for arbitrary film stacks.

cond-mat.mes-hall↗