arXiv subjects

Felix Trier

Publications and source records attributed to Felix Trier.

At least 19 recordsLinked to original sources

arXiv2026

Magnetic contacts on freestanding superconducting LaAlO$_3$/SrTiO$_3$ micromembranes

The superconducting two-dimensional electron gas (2DEG) at the LaAlO$_3$/SrTiO$_3$ (LAO-STO) interface is a promising platform for superconducting spintronics, however, integrating ferromagnetic contacts with the superconducting 2DEG remains challenging. Here, we realize superconducting LAO-STO micromembrane devices contacted by ferromagnetic nickel contacts through a side-contact geometry. Low-temperature transport measurements demonstrate that superconductivity is preserved in the presence of the ferromagnetic contacts. We show that the superconducting state is strongly influenced by the magnetic history of the nickel contacts, which generates a tunable effective magnetic field in the 2DEG. Through an effective field model, the magnetization of the contacts can be inferred from the maximum superconducting response. Our results establish ferromagnetically contacted LAO-STO as a platform for future investigations of spin injection into oxide superconductors and provide a route towards superconducting spintronic devices based on complex oxide interfaces.

cond-mat.supr-con↗

arXiv2026

Lithography-free patterning of SrTiO$_3$-based two-dimensional electron gases using direct atomic layer processing

We present a scalable and lithography-free strategy for the realization of a two-dimensional electron gas (2DEG) in TiO$_2$-patterned SrTiO$_3$ (100) via Al deposition using magnetron sputtering. A 15 nm thick TiO$_2$ layer, deposited by direct atomic layer processing, is employed to spatially define the conducting regions, enabling direct transport measurements without post-growth microfabrication. Upon Al deposition, an insulating AlO$_x$ overlayer is formed, and the region lacking the TiO$_2$ pattern leads to the creation of oxygen vacancies in SrTiO$_3$. These oxygen vacancies act as electron donors, populating the Ti 3$d$ conduction bands and giving rise to a confined 2DEG at the interface. Magneto-transport measurements reveal a sheet carrier density on the order of $\approx5-7\times10^{13}$ cm$^{-2}$, comparable to values typically achieved in pulsed laser deposition-grown SrTiO$_3$-based heterostructures, along with effective electrostatic tunability. This work demonstrates a simple, cost-effective, and industry-compatible route for engineering oxide 2DEGs, providing a versatile platform for scalable device fabrication and interfacial transport studies.

cond-mat.mtrl-sci↗

arXiv2026

Intrinsic Negative-U Centers in Freestanding LaAlO3/SrTiO3 Micro-membranes

The LaAlO3/SrTiO3 (LAO/STO) interface hosts a rich range of electronic phenomena, including unconventional electron pairing that in quantum dots gives rise to a negative effective charging energy U. Here, we show freestanding LAO/STO micro-membranes naturally hosting negative-U centers, where lateral confinement arises intrinsically, rather than from engineered nanostructures. These centers coexist with gate-tunable superconductivity and can remain stable upon thermal cycling from millikelvin temperatures to room temperature. Transport is in excellent agreement with calculations based on a negative-U Anderson model, and electrostatic simulations indicate characteristic center sizes of 20-80 nm. Our findings suggest that negative-U centers may arise from the intrinsic interfacial inhomogeneity typical of LAO/STO, and should therefore be considered a general feature of the LAO/STO interface. This could have important consequences for the microwave response of interfacial superconducting devices.

cond-mat.mtrl-sci↗

arXiv2025

Magnetism and nonlinear charge transport in NiFe2O4/{\gamma}-Al2O3/SrTiO3 heterostructure: Toward Spintronic Applications

We present the synthesis and study of the magnetic and electronic properties of NiFe2O4/{\gamma}-Al2O3/SrTiO3 heterostructure. The {\gamma}-Al2O3/SrTiO3 interface hosts a high-mobility two-dimensional electron gas (2DEG) with large spin-orbit coupling, making it promising for spintronics applications if it can be coupled to a suitable source of spin currents. Here, we synthesize a ferrimagnetic insulating NiFe2O4(001) layer on {\gamma}-Al2O3(001)/SrTiO3(001) using a low-temperature reactive sputtering at 150 deg C without compromising the mobility and charge carrier density of the 2DEG at the {\gamma}-Al2O3(001)/SrTiO3(001) interface. The sheet resistance of both {\gamma}-Al2O3/SrTiO3 and NiFe2O4/{\gamma}-Al2O3/SrTiO3 exhibits metallic behavior down to cryogenic temperatures, with a low temperature upturn driven by the Kondo-like scattering. Most importantly, NiFe2O4/{\gamma}-Al2O3/SrTiO3 behaves as a magnetic diode at low temperatures, and its rectification performance increases significantly with increasing magnetic field strength giving rise to a robust magneto-electronic rectification effect at low temperatures, which provides a first step towards the development of all-oxide heterostructures capable of efficient spin-charge conversion.

cond-mat.mtrl-sci↗

arXiv2025

Leveraging high fluence and low pressure for pulsed laser deposition of high-mobility $\gamma$-Al$_2$O$_3$/SrTiO$_3$ heterostructure growth

High-mobility oxide heterostructures could be applied for high-frequency devices, transparent conductors, and spin-orbit logic devices. SrTiO$_3$ is one of the most studied oxide substrate materials for heterostructures. To date, the highest SrTiO3-based charge carrier mobility at 2 K was measured in the interfacial 2-dimensional electron gas (2DEG) of $\gamma$-Al$_2$O$_3$/SrTiO$_3$. The formation mechanism and origin of the high electron mobility are not yet fully understood. This investigation presents a successful growth protocol to synthesise high mobility $\gamma$-Al$_2$O$_3$/SrTiO$_3$ interfaces, and a description of the underlying growth optimisation. Furthermore, indicative features of high-mobility $\gamma$-Al$_2$O$_3$/SrTiO$_3$, including the room-temperature sheet resistance, are presented. Signs of epitaxial and crystalline growth are found in a high-mobility sample ($\mu^{10K} = 1.6 \times 10^4 \mathrm{cm}^2/\mathrm{Vs}$). Outlining the growth mechanisms and comparing 40 samples, indicates that high-fluence ($F > 3\mathrm{J}/\mathrm{cm}^2$) and low pressure ($P \approx 1 \times 10^{-6} \mathrm{mbar}$) are essential growth parameters for high-mobility $\gamma$-Al$_2$O$_3$/SrTiO$_3$ interfaces. $\gamma$-Al$_2$O$_3$ having single-element cations allows higher laser fluences during growth, compared to thin films with multi-element cations such as LaAlO$_3$, without causing stoichiometric imbalances.

cond-mat.mtrl-sci↗

arXiv2024

Charge gain via solid-state gating of an oxide Mott system

The modulation of channel conductance in field-effect transistors (FETs) via metal-oxide-semiconductor (MOS) structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical switching have driven the search for new materials capable of overcoming these constraints. Electrostatic gating of competing electronic phases in a Mott material near its metal to insulator transition (MIT) offers prospects of substantial modulation of the free carriers and electrical resistivity through small changes in band filling. While electrostatic control of the MIT has been previously reported, the advancement of Mott materials towards novel Mott transistors requires the realization of their charge gain prospects in a solid-state device. In this study, we present gate-control of electron correlation using a solid-state device utilizing the oxide Mott system $La_{1-x}Sr_xVO_3$ as a correlated FET channel. We report on a gate resistance response that cannot be explained in a purely electrostatic framework, suggesting at least $\times100$ charge gain originating from the correlated behavior. These preliminary results pave the way towards the development of highly efficient, low-power electronic devices that could surpass the performance bottlenecks of conventional FETs by leveraging the electronic phase transitions of correlated electron systems.

cond-mat.str-el↗

arXiv2024

Coexistence of high electron-mobility, unpaired spins, and superconductivity at high carrier density SrTiO$_3$-based interfaces

The $t_{2g}$ band-structure of SrTiO$_3$-based two-dimensional electron gasses (2DEGs), have been found to play a role in features such as the superconducting dome, high-mobility transport, and the magnitude of spin-orbit coupling. This adds to the already very diverse range of phenomena, including magnetism and extreme magnetoresistance, exhibited by this particular material platform. Tuning and/or combining these intriguing attributes could yield significant progress within quantum and spintronics technologies. Doing so demands precise control of the parameters, which requires a better understanding of the factors that affect them. Here we present effects of the $t_{2g}$ band-order inversion, stemming from the growth of spinel-structured $\gamma$-Al$_2$O$_3$ onto perovskite SrTiO$_3$. Electronic transport measurements show that with LaAlO$_3$/SrTiO$_3$ as the reference, the carrier density and electron mobility are enhanced, and the sample displays a reshaping of the superconducting dome. Additionally, unpaired spins are evidenced by increasing Anomalous Hall Effect with decreasing temperature, entering the same temperature range as the superconducting transition, and a Kondo-like upturn in the sheet resistance. Finally, it is argued that the high-mobility $d_{xz/yz}$-band is more likely than the $d_{xy}$-band to host the supercurrent.

cond-mat.mtrl-sci↗

arXiv2023

All-electrical detection of the spin-charge conversion in nanodevices based on SrTiO3 two-dimensional electron gases

The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through spin-charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two-dimensional electron gases (2DEGs) have shown very large spin-charge conversion efficiencies, albeit mostly in spin-pumping experiments. Here, we report all-electrical spin-injection and spin-charge conversion experiments in nanoscale devices harnessing the inverse Edelstein effect of SrTiO3 2DEGs. We have designed, patterned and fabricated nanodevices in which a spin current injected from a cobalt layer into the 2DEG is converted into a charge current. We optimized the spin-charge conversion signal by applying back-gate voltages, and studied its temperature evolution. We further disentangled the inverse Edelstein contribution from spurious effects such as the planar Hall effect, the anomalous Hall effect or the anisotropic magnetoresistance. The combination of non-volatility and high energy efficiency of these devices could potentially lead to new technology paradigms for beyond-CMOS computing architectures.

cond-mat.mes-hall↗

arXiv2023

Spin-Hall Current and Nonlocal Transport in Ferromagnet-Free Multi-band models for SrTiO3-Based Nanodevices in the presence of impurities

We compute the spin-Hall conductance in a multiband model describing the two-dimensional electron gas formed at a LaAlO3/SrTiO3 interface in the presence of a finite concentration of impurities. Combining linear response theory with a systematic calculation of the impurity contributions to the self-energy, as well as to the vertex corrections of the relevant diagrams, we recover the full spin-Hall vs. sheet conductance dependence of LaAlO3/SrTiO3 as reported in Trier et al. [Nano Lett. 20, 395 (2020)], finding a very good agreement with the experimental data below and above the Lifshitz transition. In particular, we demonstrate that the multiband electronic structure leads to only a partial, instead of a complete, screening of the spin-Hall conductance, which decreases with increasing the carrier density. Our method can be generalized to other two-dimensional systems characterized by a broken inversion symmetry and multiband physics.

cond-mat.mes-hall↗

arXiv2022

Ultra-High Carrier Mobilities in Ferroelectric Domain Wall Corbino Cones at Room Temperature

Recently, electrically conducting heterointerfaces between dissimilar band-insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport has been thoroughly explored and fundamental aspects of conduction firmly established. Perhaps surprisingly, similar insights into conceptually much simpler conducting homointerfaces, such as the domain walls that separate regions of different orientations of electrical polarisation within the same ferroelectric band-insulator, are not nearly so well-developed. Addressing this disparity, we herein report magnetoresistance in approximately conical 180o charged domain walls, which occur in partially switched ferroelectric thin film single crystal lithium niobate. This system is ideal for such measurements: firstly, the conductivity difference between domains and domain walls is extremely and unusually large (a factor of at least 1013) and hence currents driven through the thin film, between planar top and bottom electrodes, are overwhelmingly channelled along the walls; secondly, when electrical contact is made to the top and bottom of the domain walls and a magnetic field is applied along their cone axes (perpendicular to the thin film surface), then the test geometry mirrors that of a Corbino disc, which is a textbook arrangement for geometric magnetoresistance measurement. Our data imply carriers at the domain walls with extremely high room temperature Hall mobilities of up to ~ 3,700cm2V-1s-1. This is an unparalleled value for oxide interfaces (and for bulk oxides too) and is most comparable to mobilities in other systems typically seen at cryogenic, rather than at room, temperature.

cond-mat.mtrl-sci↗

arXiv2021

Nonreciprocal transport in a Rashba ferromagnet, delafossite PdCoO$_2$

Rashba interfaces yield efficient spin-charge interconversion and give rise to nonreciprocal transport phenomena. Here, we report magnetotransport experiments in few-nanometer-thick films of PdCoO$_2$, a delafossite oxide known to display a large Rashba splitting and surface ferromagnetism. By analyzing the angle dependence of the first- and second-harmonic longitudinal and transverse resistivities, we identify a Rashba-driven unidirectional magnetoresistance that competes with the anomalous Nernst effect below the Curie point. We estimate a Rashba coefficient of 0.75 {\pm} 0.3 eV Å and argue that our results qualify delafossites as a new family of oxides for nano-spintronics and spin-orbitronics, beyond perovskite materials.

cond-mat.mes-hall↗

arXiv2021

Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases

Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO$_3$ (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, we report the observation of both the DEE and IEE in a new interfacial two-dimensional electron gas (2DEG) based on the perovskite oxide KTaO$_3$. We generate 2DEGs by the simple deposition of Al metal onto KTaO$_3$ single crystals, characterize them by angle-resolved photoemission spectroscopy and magnetotransport, and demonstrate the DEE through unidirectional magnetoresistance and the IEE by spin-pumping experiments. We compare the spin-charge interconversion efficiency with that of STO-based interfaces, relate it to the 2DEG electronic structure, and give perspectives for the implementation of KTaO$_3$ 2DEGs into spin-orbitronic devices.

cond-mat.mes-hall↗

arXiv2021

Oxide spin-orbitronics: spin-charge interconversion and topological spin textures

Quantum oxide materials possess a vast range of properties stemming from the interplay between the lattice, charge, spin and orbital degrees of freedom, in which electron correlations often play an important role. Historically, the spin-orbit coupling was rarely a dominant energy scale in oxides. It however recently came to the forefront, unleashing various exotic phenomena connected with real and reciprocal-space topology that may be harnessed in spintronics. In this article, we review the recent advances in the new field of oxide spin-orbitronics with a special focus on spin-charge interconversion from the direct and inverse spin Hall and Edelstein effects, and on the generation and observation of topological spin textures such as skyrmions. We highlight the control of spin-orbit-driven effects by ferroelectricity and give perspectives for the field.

cond-mat.mtrl-sci↗

arXiv2021

Metal/SrTiO$_3$ two-dimensional electron gases for spin-to-charge conversion

SrTiO$_3$-based two-dimensional electron gases (2DEGs) can be formed through the deposition of epitaxial oxides like LaAlO$_3$ or of reactive metals such as Al. Such 2DEGs possess a finite Rashba spin-orbit coupling that has recently been harnessed to interconvert charge and spin currents through the direct and inverse Edelstein and spin Hall effects. Here we compare the formation and properties of 2DEGs generated in SrTiO$_3$ by the growth of Al, Ta and Y ultrathin films by magnetron sputtering. By combining in situ and ex situ X-ray photoelectron spectroscopy (XPS) we gain insight into the reduction of the SrTiO$_3$ and the appearance of Ti$^{3+}$ states associated with 2DEG formation, its reoxidation by exposure to the air, and the transformation of the metal into its binary oxides. We extract the carrier densities through magnetotransport and compare them with the XPS data. Finally, working with samples covered by an extra layer of NiFe, we perform spin-pumping ferromagnetic resonance experiments and investigate spin-charge conversion as a function of gate voltage. We identify trends in the data across the different sample systems and discuss them as a function of the carrier density and the transparency of the metal oxide tunnel barrier.

cond-mat.mes-hall↗

arXiv2021

The 2021 Quantum Materials Roadmap

In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry.

cond-mat.mes-hall↗

arXiv2020

A switchable two-dimensional electron gas based on ferroelectric Ca:SrTiO$_3$

Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an external gate voltage, which in turn tunes the 2DEG carrier density, sheet resistance and other related properties, this modulation is volatile. Here, we report the design of a ''ferroelectric'' 2DEG whose transport properties can be electrostatically switched in a non-volatile way. We generate a 2DEG by depositing a thin Al layer onto a SrTiO$_3$ single crystal in which 1 percent of Sr is substituted by Ca to make it ferroelectric. Signatures of the ferroelectric phase transition at 25 K are visible in the Raman response and in the temperature dependences of the carrier density and sheet resistance that shows a hysteretic dependence on electric field as a consequence of ferroelectricity. We suggest that this behavior may be extended to other oxide 2DEGs, leading to novel types of ferromagnet-free spintronic architectures.

cond-mat.mtrl-sci↗

arXiv2016

Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO$_{3}$

The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 heterointerface based on the modulation-doped amorphous-LaAlO$_{3}$/SrTiO$_{3}$ heterostructure, which exhibits both high electron mobility exceeding 10000 cm$^{2}$/Vs and low carrier density on the order of ~10$^{12}$ cm$^{-2}$. Along with unambiguous Shubnikov-de Haas oscillations, the spacing of the quantized Hall resistance suggests that the interface is comprised of a single quantum well with ten parallel conducting two-dimensional subbands. This provides new insight into the electronic structure of conducting oxide interfaces and represents an important step towards designing and understanding advanced oxide devices.

cond-mat.mtrl-sci↗

arXiv2016

DeXpression: Deep Convolutional Neural Network for Expression Recognition

We propose a convolutional neural network (CNN) architecture for facial expression recognition. The proposed architecture is independent of any hand-crafted feature extraction and performs better than the earlier proposed convolutional neural network based approaches. We visualize the automatically extracted features which have been learned by the network in order to provide a better understanding. The standard datasets, i.e. Extended Cohn-Kanade (CKP) and MMI Facial Expression Databse are used for the quantitative evaluation. On the CKP set the current state of the art approach, using CNNs, achieves an accuracy of 99.2%. For the MMI dataset, currently the best accuracy for emotion recognition is 93.33%. The proposed architecture achieves 99.6% for CKP and 98.63% for MMI, therefore performing better than the state of the art using CNNs. Automatic facial expression recognition has a broad spectrum of applications such as human-computer interaction and safety systems. This is due to the fact that non-verbal cues are important forms of communication and play a pivotal role in interpersonal communication. The performance of the proposed architecture endorses the efficacy and reliable usage of the proposed work for real world applications.

cs.CV↗