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Femke J. Witmans

Publications and source records attributed to Femke J. Witmans.

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Induced superconductivity in selective-area grown SnTe devices

Topological superconductors are of high interest for applications in topological quantum computation. The required topologically superconducting state can be engineered by proximityinducing superconductivity in a topological insulator. Here, we explore the induced superconductivity in selective-area grown nanowires of the topological crystalline insulator SnTe on a InP substrate, through TEM/EDX and low-temperature electronic transport studies. The observed superconducting behavior likely originates from indium in the substrate diffusing upwards into the SnTe nanowire, forming a thin layer of InxSn1-xTe at the interface between the nanowire and the substrate. InxSn1-xTe is intrinsically superconducting for indium concentrations above 2%, resulting in superconductivity within the heterostructure. Little-Parks oscillations are observed in loop-shaped nanowire networks in an out-of-plane magnetic field. The half-period shift indicative of a topological superconducting state is absent, which is explained by dominant trivial transport channels obscuring any topological signatures.

cond-mat.mes-hall

Quantum transport in SnTe nanowire devices

We report on a variety of quantum transport experiments in SnTe nanowire devices. Research on these particular nanowire devices is relevant because of their topological properties and their potential to distinguish surface states owing to their high surface-to-volume ratio that suppresses the bulk contribution to the conductance. We observe a low-resistance and a high-resistance regime. The highly resistive devices display semiconducting and quantum dot behavior caused by microscopic differences in the fabrication, while devices with low resistance show partial superconductivity when in a hybrid superconductor-nanowire configuration or Fabry-Pérot oscillations. The latter suggests quantum interference in a ballistic transport channel, attributed to the 2D surface states in SnTe. The wide variety of quantum transport phenomena demonstrate SnTe nanowires as a promising platform for diverse follow-up experiments and novel device architectures, including the exploration of topological superconductivity and the development of low-energy spintronic devices.

cond-mat.mes-hall